The AlGaN-based deep ultraviolet light-emitting diodes（LED） with double electron blocking layers（d-EBLs） on both sides of the active region are investigated theoretically. They possess many excellent performances ...The AlGaN-based deep ultraviolet light-emitting diodes（LED） with double electron blocking layers（d-EBLs） on both sides of the active region are investigated theoretically. They possess many excellent performances compared with the conventional structure with only a single electron blocking layer, such as a higher recombination rate, improved light output power and internal quantum efficiency（IQE）. The reasons can be concluded as follows. On the one hand, the weakened electrostatic field within the quantum wells（QWs） enhances the electron–hole spatial overlap in QWs, and therefore increases the probability of radioactive recombination. On the other hand, the added n-AlGaN layer can not only prevent holes from overflowing into the n-side region but also act as another electron source, providing more electrons.展开更多
A novel A1GaN/GaN high electron mobility transistor （HEMT） with double buried p-type layers （DBPLs） in the GaN buffer layer and its mechanism are studied. The DBPL A1GaN/GaN HEMT is characterized by two equi-long ...A novel A1GaN/GaN high electron mobility transistor （HEMT） with double buried p-type layers （DBPLs） in the GaN buffer layer and its mechanism are studied. The DBPL A1GaN/GaN HEMT is characterized by two equi-long p-type GaN layers which are buried in the GaN buffer layer under the source side. Under the condition of high-voltage blocking state, two reverse p-n junctions introduced by the buried p-type layers will effectively modulate the surface and bulk electric fields. Meanwhile, the buffer leakage is well suppressed in this structure and both lead to a high breakdown voltage. The simulations show that the breakdown voltage of the DBPL structure can reach above 2000 V from 467 V of the conventional structure with the same gate-drain length of 8μm.展开更多
Recent advances in two-dimensional layered systems have greatly enriched electronic transport studies, particularly in inter-layer Coulomb drag research. Here, systematic transport measurements were conducted in graph...Recent advances in two-dimensional layered systems have greatly enriched electronic transport studies, particularly in inter-layer Coulomb drag research. Here, systematic transport measurements were conducted in graphene-based electronic double-layer structures, revealing giant yet reproducible drag fluctuations at cryogenic temperatures. These fluctuations' characteristics, including amplitude and peak/valley spacing, are mainly determined by the drag layer's carrier dynamics rather than the drive layer's, resulting in violation of the Onsager reciprocity relation. Notably, the drag fluctuations remain observable up to 35 K, far exceeding universal conductance fluctuations within individual layers. This suggests enhanced phase coherence in inter-layer drag compared to single-layer transport, as further confirmed by quantitative analysis of auto-correlation fields of fluctuations under magnetic fields. Our findings provide new insights into quantum interference effects and their interplay with Coulomb interactions in solids. The observations of significant drag fluctuations could potentially help address chaotic signals between nearby components in nanoscale devices.展开更多
基金Project supported by the Special Strategic Emerging Industries of Guangdong Province,China(Grant No.2012A080304006)the Major Scientific and Technological Projects of Zhongshan City,Guangdong Province,China(Grant No.2014A2FC204)the Forefront of Technology Innovation and Key Technology Projects of Guangdong Province,China(Grant Nos.2014B010121001 and 2014B010119004)
文摘The AlGaN-based deep ultraviolet light-emitting diodes（LED） with double electron blocking layers（d-EBLs） on both sides of the active region are investigated theoretically. They possess many excellent performances compared with the conventional structure with only a single electron blocking layer, such as a higher recombination rate, improved light output power and internal quantum efficiency（IQE）. The reasons can be concluded as follows. On the one hand, the weakened electrostatic field within the quantum wells（QWs） enhances the electron–hole spatial overlap in QWs, and therefore increases the probability of radioactive recombination. On the other hand, the added n-AlGaN layer can not only prevent holes from overflowing into the n-side region but also act as another electron source, providing more electrons.
基金Supported by the National Natural Science Foundation of China under Grant Nos 61334002,61106106,and 61204085the China Postdoctoral Science Foundation Funded Project under Grant No 2015M582610
文摘A novel A1GaN/GaN high electron mobility transistor （HEMT） with double buried p-type layers （DBPLs） in the GaN buffer layer and its mechanism are studied. The DBPL A1GaN/GaN HEMT is characterized by two equi-long p-type GaN layers which are buried in the GaN buffer layer under the source side. Under the condition of high-voltage blocking state, two reverse p-n junctions introduced by the buried p-type layers will effectively modulate the surface and bulk electric fields. Meanwhile, the buffer leakage is well suppressed in this structure and both lead to a high breakdown voltage. The simulations show that the breakdown voltage of the DBPL structure can reach above 2000 V from 467 V of the conventional structure with the same gate-drain length of 8μm.
基金supported by the National Natural Science Foundation of China (Grant Nos.12474051 and 92165201)the Chinese Academy of Sciences Project for Young Scientists in Basic Research (Grant No.YSBR-046)+1 种基金the National Key Research and Development Program of China (Grant No.2023YFA1406300)the Anhui Provincial Natural Science Foundation (Grant Nos.2308085J11 and2308085QA14)。
文摘Recent advances in two-dimensional layered systems have greatly enriched electronic transport studies, particularly in inter-layer Coulomb drag research. Here, systematic transport measurements were conducted in graphene-based electronic double-layer structures, revealing giant yet reproducible drag fluctuations at cryogenic temperatures. These fluctuations' characteristics, including amplitude and peak/valley spacing, are mainly determined by the drag layer's carrier dynamics rather than the drive layer's, resulting in violation of the Onsager reciprocity relation. Notably, the drag fluctuations remain observable up to 35 K, far exceeding universal conductance fluctuations within individual layers. This suggests enhanced phase coherence in inter-layer drag compared to single-layer transport, as further confirmed by quantitative analysis of auto-correlation fields of fluctuations under magnetic fields. Our findings provide new insights into quantum interference effects and their interplay with Coulomb interactions in solids. The observations of significant drag fluctuations could potentially help address chaotic signals between nearby components in nanoscale devices.
