Two measuring methods of the wide absorption spectrum by distributed feedback laser diodes （DFB-LDs） are presented in detecting the water vapor absorption line. One is the subsection scanning method, and it takes ad...Two measuring methods of the wide absorption spectrum by distributed feedback laser diodes （DFB-LDs） are presented in detecting the water vapor absorption line. One is the subsection scanning method, and it takes advantage of the wide spectrum tuning range by the temperature modulation and fast spectrum tuning speed by current modulation. Specifically, this method is realized by dividing a target spectral region into several sections which correspond to the specific temperature of DFB-LD, scanning every section by current modulation for hundreds times, and averaging the data to raise the signal to noise ratio （SNR）, then combining all sections to get the whole spectrum. An accuracy of 10ppmv had been obtained in the measurement of water vapor with a 10-cm path length by this method. Another is data fitting method, based on the absorption line-shape function; the absorption line can be described by fitting with partial measured data. The fitting absorption line was fitted well with the measured data, and the square of correlation coefficient （R-square） was no less than 0.99.展开更多
光栅结构的设计和制作直接决定了分布反馈（DFB）半导体激光器光电特性的优劣。采用传输矩阵法模拟了不同光栅耦合因子下随机相位对均匀光栅DFB芯片特性的影响,获得了芯片的光电参数分布。通过分析耦合因子对芯片光电参数分布的影响,提...光栅结构的设计和制作直接决定了分布反馈（DFB）半导体激光器光电特性的优劣。采用传输矩阵法模拟了不同光栅耦合因子下随机相位对均匀光栅DFB芯片特性的影响,获得了芯片的光电参数分布。通过分析耦合因子对芯片光电参数分布的影响,提高了DFB芯片的成品率。设计并制备了基于Al Ga In As材料体系的脊波导DFB激光器,最终使芯片双峰比例仅为7.7%、成品率达到60%。对合格品在-40~105℃下的P-I特性和在-40~85℃下的光谱进行了测试,结果表明芯片性能优良,芯片远场发散角为25°和21°。芯片的小信号频带响应和眼图测试结果表明芯片完全满足2.5 Gbit/s的应用要求。展开更多
Integrated electro-absorption-modulated distributed feedback laser diodes(EMLs)are attracting much interest in optical communications for the advantages of a compact structure,low power consumption,and high-speed modu...Integrated electro-absorption-modulated distributed feedback laser diodes(EMLs)are attracting much interest in optical communications for the advantages of a compact structure,low power consumption,and high-speed modulation.In integrated EML,the microwave interaction between the distributed feedback laser diode(DFB-LD)and the electro-absorption modulator(EAM)has a nonnegligible influence on the modulation performance,especially at the high-frequency region.In this paper,integrated EML was investigated as a three-port network with two electrical inputs and a single optical output,where the scattering matrix of the integrated device was theoretically deduced and experimentally measured.Based on the theoretical model and the measured data,the microwave equivalent circuit model of the integrated device was established,from which the microwave interaction between DFB-LD and EAM was successfully extracted.The results reveal that the microwave interaction within integrated EML contains both the electrical isolation and optical coupling.The electrical isolation is bidirectional while the optical coupling is directional,which aggravates the microwave interaction in the direction from DFB-LD to EAM.展开更多
A high power and low distortion 1.31 μm AlGaInAs/InP multiquantum well distributed feedback laser diode (MQW DFB LD) with RWG structure has been developed by MOCVD technique. The fiber output power of butterfly packa...A high power and low distortion 1.31 μm AlGaInAs/InP multiquantum well distributed feedback laser diode (MQW DFB LD) with RWG structure has been developed by MOCVD technique. The fiber output power of butterfly packaged module with optic isolator P f is more than 10 mW, threshold current is in the range of (13～20) mA, slope efficiency, E s>0.30 W/A and side mode suppression ratio, R S,M,S >35 dB. The composite second order, O C,S <-61 dBc and composite triple beat, B C,T <-65 dBc are obtained by test frequencies of (45～550) MHz with 60 PAL channels. In the test conditions the carrier to noise ratio, R C,N >51 dB.展开更多
基金This work was supported by Natural Science Foundation of China （60977058 ＆ 61205083）, Independent Innovation Foundation of Shandong University （IIFSDU2010JC002 ＆ 2012JC015）, the key technology projects of Shandong Province （2010GGX10137）, and promotive research fund for excellent young and middle-aged scientists of Shandong Province （BS2010DX028）. Open Access This article is distributed under the terms of the Creative Commons Attribution License which permits any use, distribution, and reproduction in any medium, provided the original author（s） and source are credited.
文摘Two measuring methods of the wide absorption spectrum by distributed feedback laser diodes （DFB-LDs） are presented in detecting the water vapor absorption line. One is the subsection scanning method, and it takes advantage of the wide spectrum tuning range by the temperature modulation and fast spectrum tuning speed by current modulation. Specifically, this method is realized by dividing a target spectral region into several sections which correspond to the specific temperature of DFB-LD, scanning every section by current modulation for hundreds times, and averaging the data to raise the signal to noise ratio （SNR）, then combining all sections to get the whole spectrum. An accuracy of 10ppmv had been obtained in the measurement of water vapor with a 10-cm path length by this method. Another is data fitting method, based on the absorption line-shape function; the absorption line can be described by fitting with partial measured data. The fitting absorption line was fitted well with the measured data, and the square of correlation coefficient （R-square） was no less than 0.99.
文摘光栅结构的设计和制作直接决定了分布反馈（DFB）半导体激光器光电特性的优劣。采用传输矩阵法模拟了不同光栅耦合因子下随机相位对均匀光栅DFB芯片特性的影响,获得了芯片的光电参数分布。通过分析耦合因子对芯片光电参数分布的影响,提高了DFB芯片的成品率。设计并制备了基于Al Ga In As材料体系的脊波导DFB激光器,最终使芯片双峰比例仅为7.7%、成品率达到60%。对合格品在-40~105℃下的P-I特性和在-40~85℃下的光谱进行了测试,结果表明芯片性能优良,芯片远场发散角为25°和21°。芯片的小信号频带响应和眼图测试结果表明芯片完全满足2.5 Gbit/s的应用要求。
基金This work was supported by the National Key Research and Development Program of China under Grant No.2018YFE0201900the National Natural Science Foundation of China under Grants No.61927821 and No.61875240the Joint Research Fund of Ministry of Education of China under Grant No.6141A02022436.
文摘Integrated electro-absorption-modulated distributed feedback laser diodes(EMLs)are attracting much interest in optical communications for the advantages of a compact structure,low power consumption,and high-speed modulation.In integrated EML,the microwave interaction between the distributed feedback laser diode(DFB-LD)and the electro-absorption modulator(EAM)has a nonnegligible influence on the modulation performance,especially at the high-frequency region.In this paper,integrated EML was investigated as a three-port network with two electrical inputs and a single optical output,where the scattering matrix of the integrated device was theoretically deduced and experimentally measured.Based on the theoretical model and the measured data,the microwave equivalent circuit model of the integrated device was established,from which the microwave interaction between DFB-LD and EAM was successfully extracted.The results reveal that the microwave interaction within integrated EML contains both the electrical isolation and optical coupling.The electrical isolation is bidirectional while the optical coupling is directional,which aggravates the microwave interaction in the direction from DFB-LD to EAM.
文摘A high power and low distortion 1.31 μm AlGaInAs/InP multiquantum well distributed feedback laser diode (MQW DFB LD) with RWG structure has been developed by MOCVD technique. The fiber output power of butterfly packaged module with optic isolator P f is more than 10 mW, threshold current is in the range of (13～20) mA, slope efficiency, E s>0.30 W/A and side mode suppression ratio, R S,M,S >35 dB. The composite second order, O C,S <-61 dBc and composite triple beat, B C,T <-65 dBc are obtained by test frequencies of (45～550) MHz with 60 PAL channels. In the test conditions the carrier to noise ratio, R C,N >51 dB.
