By using steady and transient methods, the total heat fluxes and the distributions of the heat flux were measured experimentally for an argon DC laminar plasma jet impinging normally on a flat plate at atmospheric pre...By using steady and transient methods, the total heat fluxes and the distributions of the heat flux were measured experimentally for an argon DC laminar plasma jet impinging normally on a flat plate at atmospheric pressure. Results show that the total heat fluxes measured with a steady method are a little bit higher than those with a transient method. Numerical simulation work was executed to compare with the experimental results.展开更多
A new material structure with Al 0.22Ga 0.78As/In 0.15Ga 0.85As/GaAs emitter spacer layer and GaAs/In 0.15- Ga 0.85As/GaAs well for resonant tunneling diodes is designed and the corresponding device...A new material structure with Al 0.22Ga 0.78As/In 0.15Ga 0.85As/GaAs emitter spacer layer and GaAs/In 0.15- Ga 0.85As/GaAs well for resonant tunneling diodes is designed and the corresponding device is fabricated.RTDs DC characteristics are measured at room temperature. Peak-to-valley current ratio and the available current density for RTDs at room temperature are computed.Analysis on these results suggests that adjusting material structure and optimizing fabrication processes will be an effective means to improve the quality of RTDs.展开更多
基金he National Natural Science Foundation of China under the grant No. 59836220 and 19975064and endowed with President's Foundati
文摘By using steady and transient methods, the total heat fluxes and the distributions of the heat flux were measured experimentally for an argon DC laminar plasma jet impinging normally on a flat plate at atmospheric pressure. Results show that the total heat fluxes measured with a steady method are a little bit higher than those with a transient method. Numerical simulation work was executed to compare with the experimental results.
文摘A new material structure with Al 0.22Ga 0.78As/In 0.15Ga 0.85As/GaAs emitter spacer layer and GaAs/In 0.15- Ga 0.85As/GaAs well for resonant tunneling diodes is designed and the corresponding device is fabricated.RTDs DC characteristics are measured at room temperature. Peak-to-valley current ratio and the available current density for RTDs at room temperature are computed.Analysis on these results suggests that adjusting material structure and optimizing fabrication processes will be an effective means to improve the quality of RTDs.
