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Preparation of CeO_2 Buffer Layer on Cube Textured Nickel Substrate by Reactive Sputtering
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作者 Zhang Hua Yang Jian Gu Hongwei Liu Huizhou Qu Fei 《Journal of Rare Earths》 SCIE EI CAS CSCD 2006年第2期205-205,共1页
The buffer layer CeO2 films were grown on cube textured metallic Ni substrates by using reactive magnetrun sputtering. Ar/H2 mixed atmosphere, which effectively inhibited the formation of NiO, was used as pre-depositi... The buffer layer CeO2 films were grown on cube textured metallic Ni substrates by using reactive magnetrun sputtering. Ar/H2 mixed atmosphere, which effectively inhibited the formation of NiO, was used as pre-depositing gas before CeO2 films were grown in Ar and 02. At 700 ℃ under the total pressure of 26 Pa,the pure c-axis orientation tilm was obtained. X-ray θ-2θscan, pole figure and φ-scan were used to observe the microstructure of the buffer layer. The resuits show that CeO2 film has strong cube texture and the FWHM is 9°. In addition, the CeO2 film is dense and crack-free. 展开更多
关键词 ceo2 buffer layer reactive sputtering cube texture Ni substrate rare earths
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Research on CeO2 cap layer for YBCO-coated conductor 被引量:1
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作者 石东奇 马平 +4 位作者 Ko Rock-Kil Kim Ho-Sup Chung Jun-Ki Song Kyu-Jeong Park Chan 《Chinese Physics B》 SCIE EI CAS CSCD 2007年第7期2142-2147,共6页
Two groups of coated conductor samples with different thicknesses of CeO2 cap layers deposited by pulsed laser deposition (PLD) under the same conditions have been studied. Of them, one group is of CeO2 films, which... Two groups of coated conductor samples with different thicknesses of CeO2 cap layers deposited by pulsed laser deposition (PLD) under the same conditions have been studied. Of them, one group is of CeO2 films, which are deposited on stainless steel (SS) tapes coated by IBAD-YSZ (IBAD-YSZ/SS), and the other group is of CeO2/YSZ/Y2O3 multilayers, which are deposited on NiW substrates by PLD for the fabrication of YBCO-coated conductor through the RABiTS approach. YBCO film is then deposited on the tops of both types of buffer layers by PLD. The effects of the thickness of the CeO2 film on the texture of the CeO2 film and the critical current density (Jc) of the YBCO film are analysed. For the case of CeO2 film on IBAD-YSZ/SS, there appears a self-epitaxy effect with increasing thickness of the CeO2 film. For CeO2/YSZ/Y2O3/NiW, in which the buffer layers are deposited by PLD, there occurs no self-epitaxy effect, and the optimal thickness of CeO2 is about 50 nm. The surface morphologies of the two groups of samples are examined by SEM. 展开更多
关键词 coated conductor buffer layer self-epitaxy ceo2
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Continuous Deposition of Double-sided Y_2O_3/YSZ/CeO_2 Buffer Layers for Coated Conductors
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作者 Xia Yudong, Zhang Fei, Zhang Ning, Zhang Junfei, Chai Gang, Guo Pei, Jing Tongguo, Xiong Jie, Zhao Xiaohui, Tao Bowan, Li Yanrong State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China 《稀有金属材料与工程》 SCIE EI CAS CSCD 北大核心 2011年第S3期311-314,共4页
In this paper, we report a continuous deposition method for double-sided CeO2/YSZ/Y2O3 buffer layers by reel-to-reel in a D.C. magnetron reactive sputtering system. X-ray diffraction exhibited all the samples were hig... In this paper, we report a continuous deposition method for double-sided CeO2/YSZ/Y2O3 buffer layers by reel-to-reel in a D.C. magnetron reactive sputtering system. X-ray diffraction exhibited all the samples were highly c-axis oriented and atomic force microscope observations revealed a smooth, dense and crack-free surface morphology. Out-of-plane, in-plane texture, and surface roughness of multi-buffer layers were improved under optimized deposition conditions. Full width at half maximum (FWHM) values of out-of-plane and in-plane were about 4° and 5.5° in 50 cm double-sided buffed template. YBa2Cu3O7-δ films with thickness of 1.2 μm were deposited on both sides of the buffed tape. Both sides showed similar critical current density, Jc (77 K, self field) as 0.8 MA/cm2 and 0.7 MA/cm2, respectively. 展开更多
关键词 CONTINUOUS DEPOSITION double-sided Y2O3/YSZ/ceo2 buffer layers
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Growth of CeO_2, Y_2O_3 Buffer Layers for YBCO Coated Conductor
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作者 Zhang Hua Yang Jian Gu Hongwei Liu Huizhou Qu Fei 《Journal of Rare Earths》 SCIE EI CAS CSCD 2006年第5期I0001-I0001,共1页
The CeO2 and Y2O3 buffer layers were deposited on the cube textured metallic Ni substrates by using reactive magnetron sputtering. Ar/H2 mixed atmosphere, which is used as pre-depositing gas, can effectively inhibit t... The CeO2 and Y2O3 buffer layers were deposited on the cube textured metallic Ni substrates by using reactive magnetron sputtering. Ar/H2 mixed atmosphere, which is used as pre-depositing gas, can effectively inhibit the formation of NiO. In addition, the linear relationship between pre-depositing time and total depositing time is required to ensure the epitaxial growth of the films. The growth conditions of CeO2 and Y2O3 were comparatively studied, and it is found that the windows of substrate temperatures and pressures for CeO2 films are wider than that for Y2O3 films. 展开更多
关键词 ceo2 Y2O3 buffer layer reactive sputtering cube texture Ni substrate rare earths
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Preparation, Properties and Characterization of Modified CeO_2/La_2Zr_2O_7 Buffer Layers
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作者 Cheng Yanling, Suo Hongli, Liu Min, Ma Lin, Zhang Teng Key Laboratory of Advanced Functional Materials, Ministry of Education, Beijing University of Technology, Beijing 100124, China 《稀有金属材料与工程》 SCIE EI CAS CSCD 北大核心 2011年第S3期350-353,共4页
The metal organic deposition (MOD) method was used for the epitaxial growth of the CeO2/La2Zr2O7(LZO)/LZO seed layer structure on a cube-textured Ni5W substrate layer by layer. The material phase and the macro-orienta... The metal organic deposition (MOD) method was used for the epitaxial growth of the CeO2/La2Zr2O7(LZO)/LZO seed layer structure on a cube-textured Ni5W substrate layer by layer. The material phase and the macro-orientations were analyzed by XRD. The surface morphology and the blocking performance of the buffer layer were investigated by SEM and AES. The grain orientation and the crystallographic growth mode of the CeO2 layer were first characterized by electron backscattering diffraction (EBSD). The uniformly distributed islanded LZO seed layer optimized both the in-plan and the out-plan orientation of the CeO2/LZO buffer layers, and the CeO2/LZO buffer layers with a thickness of 175 nm acted as an efficient Ni,W barrier. The EBSD analysis indicated that the crystallographic orientation of each layer can be obtained at various accelerating voltages for the multilayer sample, the percentage of {001}<110> rotated cube texture of CeO2 layer reaching 97.4% at the accelerating voltage of 15 kV, thus showing epitaxial deposition with a high texture. 展开更多
关键词 coated conductor buffer layer LA2ZR2O7 SEED layer ceo2 rotated CUBE texture accelerating voltage
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在NiW合金基底上用化学溶液法制备CeO2/La2Zr2O7过渡层 被引量:1
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作者 何东 索红莉 +7 位作者 赵跃 高忙忙 刘敏 叶帅 祝永华 王榕 马麟 周美玲 《稀有金属材料与工程》 SCIE EI CAS CSCD 北大核心 2008年第A04期165-168,共4页
采用化学溶液方法(CSD)在立方双轴织构的NiW合金基底上制备出了CeO2/La2Zr2O7(LZO)过渡层。利用常规XRD和XRD四环衍射仪对薄膜的取向进行了研究,结果显示CeO2薄膜和LZO薄膜具有很强的面内和面外取向,其中,CeO2(111)面φ扫描的半高宽值(F... 采用化学溶液方法(CSD)在立方双轴织构的NiW合金基底上制备出了CeO2/La2Zr2O7(LZO)过渡层。利用常规XRD和XRD四环衍射仪对薄膜的取向进行了研究,结果显示CeO2薄膜和LZO薄膜具有很强的面内和面外取向,其中,CeO2(111)面φ扫描的半高宽值(FWHM)约8.35°,(200)面ω扫描的FWHM值约为6.54°。用高分辨扫描电子显微镜观察到薄膜表面致密平整,没有裂纹和孔洞。原子力显微镜测试结果表明,在30μm×30μm范围内,CeO2薄膜表面均方根粗糙度(Rrms)为5.9nm。 展开更多
关键词 ceo2 LA2ZR2O7 过渡层 化学溶液法 双轴织构
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CeO2缓冲层对蓝宝石基Ba0.6Sr0.4TiO3薄膜结构和介电性能的影响
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作者 宋安英 宋建民 +3 位作者 李振娜 代秀红 娄建忠 刘保亭 《电子元件与材料》 CAS CSCD 2017年第4期27-31,共5页
利用磁控溅射法制备Ce O_2缓冲层,通过脉冲激光沉积法制备Ba_(0.6)Sr_(0.4)TiO_3(BST)薄膜,在Al_2O_3(11—02)蓝宝石基片上构架了Pt/BST/Ce O_2/Al_2O_3和Pt/BST/Al_2O_3叉指电容器,对比研究了Ce O_2缓冲层对BST薄膜结构和叉指电容器介... 利用磁控溅射法制备Ce O_2缓冲层,通过脉冲激光沉积法制备Ba_(0.6)Sr_(0.4)TiO_3(BST)薄膜,在Al_2O_3(11—02)蓝宝石基片上构架了Pt/BST/Ce O_2/Al_2O_3和Pt/BST/Al_2O_3叉指电容器,对比研究了Ce O_2缓冲层对BST薄膜结构和叉指电容器介电性能的影响。通过X射线衍射仪、原子力显微镜和LCR表分别对叉指电容器的结构、表面形貌和介电性能进行了表征。实验发现,直接沉积在蓝宝石上的BST薄膜为多晶结构,生长在Ce O_2缓冲层上的BST为(001)取向的高质量外延薄膜。生长在Ce O_2缓冲层上的BST薄膜相对于没有缓冲层的BST薄膜具有更小的晶粒和均方根粗糙度。在40 V偏置电压下,Pt/BST/Al_2O_3和Pt/BST/Ce O_2/Al_2O_3叉指电容器的调谐率分别是13.2%和25.8%;最小介电损耗为0.021和0.014。结果表明Ce O_2缓冲层对生长在蓝宝石基片上的BST薄膜结构和介电性能具有重要影响。 展开更多
关键词 Ba0.6Sr0.4TiO3薄膜 ceo2缓冲层 蓝宝石衬底 外延薄膜 介电性能 叉指电容器
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Dielectric Response and Broadband Microwave Absorption Properties of Three-Layer Graded ZnO Nanowhisker/Polyester Composites 被引量:7
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作者 周彦 史晓玲 +2 位作者 袁杰 房晓勇 曹茂盛 《Chinese Physics Letters》 SCIE CAS CSCD 2007年第11期3264-3267,共4页
We design and prepare three-layer graded ZnO nanowhisker/polyester composites. The dispersion configuration of ZnO nanowhiskers in the polyester is investigated, and their microwave reflectivity curves are also measur... We design and prepare three-layer graded ZnO nanowhisker/polyester composites. The dispersion configuration of ZnO nanowhiskers in the polyester is investigated, and their microwave reflectivity curves are also measured. Experimental results have shown that the graded dispersion with ZnO nanowhiskers contributes to broadband microwave absorption. In other words, the absorption band depends on the graded dispersion configuration of ZnO nanowhiskers in polyester matrix. 展开更多
关键词 coated conductor buffer layer self-epitaxy ceo2
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Two Phases of Coherent Structure Motions in Turbulent Boundary Layer 被引量:3
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作者 刘建华 姜楠 《Chinese Physics Letters》 SCIE CAS CSCD 2007年第9期2617-2620,共4页
Two phases of coherent structure motion are acquired after obtaining conditional phase-averaged waveforms for longitudinal velocity of coherent structures in turbulent boundary layer based on Harr wavelet transfer. Th... Two phases of coherent structure motion are acquired after obtaining conditional phase-averaged waveforms for longitudinal velocity of coherent structures in turbulent boundary layer based on Harr wavelet transfer. The correspondences of the two phases to the two processes (i.e. ejection and sweep) during a burst are determined. 展开更多
关键词 coated conductor buffer layer self-epitaxy ceo2
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Boundary Layer on a Moving Wall with Suction and Injection 被引量:2
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作者 Anuar Ishak Roslinda Nazar Ioan Pop 《Chinese Physics Letters》 SCIE CAS CSCD 2007年第8期2274-2276,共3页
We investigate the boundary-layer flow on a moving permeable plate parallel to a moving stream. The governing equations are solved numerically by a finite-difference method. Dual solutions are found to exist when the ... We investigate the boundary-layer flow on a moving permeable plate parallel to a moving stream. The governing equations are solved numerically by a finite-difference method. Dual solutions are found to exist when the plate and the free stream move in the opposite directions. 展开更多
关键词 coated conductor buffer layer self-epitaxy ceo2
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Boundary Layer Flow over a Continuously Moving Thin Needle in a Parallel Free Stream 被引量:2
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作者 Anuar Ishak Rosllinda Nazar Ioan Pop 《Chinese Physics Letters》 SCIE CAS CSCD 2007年第10期2895-2897,共3页
We investigate the boundary-layer flow on a moving isothermal thin needle parallel to a moving stream. The governing equations are solved numerically by a finite-difference method. Dual solutions are found to exist wh... We investigate the boundary-layer flow on a moving isothermal thin needle parallel to a moving stream. The governing equations are solved numerically by a finite-difference method. Dual solutions are found to exist when the needle and the free stream move in the opposite directions. 展开更多
关键词 coated conductor buffer layer self-epitaxy ceo2
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An Electroluminescence Delay Time Model of Bilayer Organic Light-Emitting Diodes 被引量:1
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作者 李宏建 朱儒晖 +1 位作者 李雪勇 杨兵初 《Chinese Physics Letters》 SCIE CAS CSCD 2007年第8期2394-2397,共4页
Based on the mechanism of injection, transport and recombination of the charge carriers, we develop a model to calculate the delay time of electroluminescence (EL) from bilayer organic light emitting diodes. The eff... Based on the mechanism of injection, transport and recombination of the charge carriers, we develop a model to calculate the delay time of electroluminescence (EL) from bilayer organic light emitting diodes. The effect of injection, transport and recombination processes on the EL delay time is discussed, and the relationship between the internal interface barrier and the recombination time is revealed. "]~he results show that the EL delay time is dominated by the recombination process at lower applied voltage and by the transport process at higher applied voltage. When the internal interface barrier varies from 0.15 eV to 0.3 eV, the recombination delay time increases rapidly~ while the internal interface barrier exceeds about 0.3eV~ the dependence of the recombination delay time on applied voltage is almost undiversified, which may serve as a guideline for designing of a high-speed EL response device. 展开更多
关键词 coated conductor buffer layer self-epitaxy ceo2
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Hydrogen Passivation Effect on Enhanced Luminescence from Nanocrystalline Si/SiO2 Multilayers
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作者 夏正月 韩培高 +6 位作者 徐骏 陈德媛 韦德远 马忠元 陈坤基 徐岭 黄信凡 《Chinese Physics Letters》 SCIE CAS CSCD 2007年第9期2657-2660,共4页
Nanocrystalline Si/SiO2 multilayers are prepared by thermally annealing amorphous Si/SiO2 stacked structures. The photoluminescence intensity is obviously enhanced after hydrogen passivation at various temperatures. I... Nanocrystalline Si/SiO2 multilayers are prepared by thermally annealing amorphous Si/SiO2 stacked structures. The photoluminescence intensity is obviously enhanced after hydrogen passivation at various temperatures. It is suggested that the hydrogen trapping and detrapping processes at different temperatures strongly influence the passivation effect. Direct experimental evidence is given by electron spin resonance spectra that hydrogen effectively reduces the nonradiative defect states existing in the Si nanocrystas/SiO2 system which enhances the radiative recombination probability. The luminescence characteristic shows its stability after hydrogen passivation even after aging eight months. 展开更多
关键词 coated conductor buffer layer self-epitaxy ceo2
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Two-Player and Two-Strategy Symmetric Evolutionary Game with Fluctuations
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作者 刘伟兵 王先甲 《Chinese Physics Letters》 SCIE CAS CSCD 2007年第10期2762-2765,共4页
Research on evolutionary games in a noisy environment is still a non-solved problem. By using Markov process, we build a dynamic model for two-player and two-strategy symmetric game in noisy environment. Some illustra... Research on evolutionary games in a noisy environment is still a non-solved problem. By using Markov process, we build a dynamic model for two-player and two-strategy symmetric game in noisy environment. Some illustrative examples are presented and the results are determined by simulation experiments. 展开更多
关键词 coated conductor buffer layer self-epitaxy ceo2
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Stable Electron Field Emission from CeO2 Nanowires by Hydrothermal Method
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作者 付星球 丰平 +1 位作者 王翀 王太宏 《Chinese Physics Letters》 SCIE CAS CSCD 2007年第8期2423-2425,共3页
CeO2 nanowires are successful synthesized by hydrothermal method and their field emission (FE) properties are investigated. The turn-on electric field is 5.8 V/μm at an emitter-anode spacing of 700μm. The FE curre... CeO2 nanowires are successful synthesized by hydrothermal method and their field emission (FE) properties are investigated. The turn-on electric field is 5.8 V/μm at an emitter-anode spacing of 700μm. The FE current is stable and the current fluctuations are less than 3% over 5 h. All the plotted Fowler-Nordheim curves yield straight lines, which are in agreement with the Fowler-Nordheim theory. The relationship between the field enhancement factor β and the emitter-anode spacing d follows a universal equation. Our results imply that the CeO2 nanowires are promising materials for fabricating FE cathodes. 展开更多
关键词 coated conductor buffer layer self-epitaxy ceo2
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反应溅射法在立方织构镍基底上制备CeO_2缓冲层 被引量:5
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作者 张华 杨坚 +2 位作者 古宏伟 刘慧舟 屈飞 《中国稀土学报》 CAS CSCD 北大核心 2006年第2期188-191,共4页
采用反应溅射的方法在具有立方织构的Ni基底上制备了CeO2缓冲层。以Ar/H2混合气体为预沉积气体,有效地抑制了基底的氧化。在基片温度为650℃,气压为26Pa的条件下沉积的CeO2薄膜具有纯c轴取向。X射线θ-2θ扫描、极图分析、Φ扫描结果表... 采用反应溅射的方法在具有立方织构的Ni基底上制备了CeO2缓冲层。以Ar/H2混合气体为预沉积气体,有效地抑制了基底的氧化。在基片温度为650℃,气压为26Pa的条件下沉积的CeO2薄膜具有纯c轴取向。X射线θ-2θ扫描、极图分析、Φ扫描结果表明,CeO2薄膜有良好的立方织构,其Φ扫描半高宽(FWHM)为9.0°。扫描电镜观察表明,薄膜致密且没有裂纹。 展开更多
关键词 ceo2缓冲层 反应溅射 立方织构 Ni基底 稀土
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YBCO涂层导体CeO_2,Y_2O_3缓冲层的生长研究 被引量:6
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作者 张华 杨坚 +2 位作者 古宏伟 刘慧舟 屈飞 《中国稀土学报》 CAS CSCD 北大核心 2006年第5期636-640,共5页
采用反应溅射的方法在具有立方织构的Ni基底上制备了CeO2,Y2O3缓冲层。Ar/H2气氛下预沉积的引入,有效地抑制了基底的氧化。同时,为保证薄膜的外延取向,预沉积时间必须和总沉积时间满足线性关系。对比CeO2,Y2O3的生长条件,发现CeO2的外... 采用反应溅射的方法在具有立方织构的Ni基底上制备了CeO2,Y2O3缓冲层。Ar/H2气氛下预沉积的引入,有效地抑制了基底的氧化。同时,为保证薄膜的外延取向,预沉积时间必须和总沉积时间满足线性关系。对比CeO2,Y2O3的生长条件,发现CeO2的外延生长区间比Y2O3宽,Y2O3的生长对温度、气压等条件更为敏感。最终制备的CeO2缓冲层是纯的(100)取向,其平面内Ф扫描半高宽(FWHM)为8.5°;而Y2O3存在两种平面取向,一种是Y2O3(110)‖Ni(100),另一种是Y2O3(100)‖Ni(100)。俄歇能谱观察表明,CeO2/Ni界面优于Y2O3/Ni界面。扫描电镜照片显示,CeO2,Y2O3缓冲层的表面均匀致密,无裂纹生成,但两种薄膜中,都有呈三角形的胞状突起。 展开更多
关键词 ceo2 Y2O3 缓冲层 反应溅射 立方织构 Ni基底 稀土
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涂层导体用Ta掺杂CeO_2过渡层的研究(英文) 被引量:1
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作者 刘敏 吕昭 +2 位作者 徐燕 叶帅 索红莉 《稀有金属材料与工程》 SCIE EI CAS CSCD 北大核心 2014年第6期1329-1331,共3页
采用简单的金属有机物沉积方法在自制的Ni-5W基带上成功地制备了Ta掺杂CeO2过渡层。XPS结果表明:在热处理时的还原性气氛中,Ta5+优先于Ce4+被还原为Ta4+,这有利于减少或抑制由于Ce4+被还原而产生的裂纹和孔洞。XRD结果表明除CeO2的衍射... 采用简单的金属有机物沉积方法在自制的Ni-5W基带上成功地制备了Ta掺杂CeO2过渡层。XPS结果表明:在热处理时的还原性气氛中,Ta5+优先于Ce4+被还原为Ta4+,这有利于减少或抑制由于Ce4+被还原而产生的裂纹和孔洞。XRD结果表明除CeO2的衍射峰稍变小外,没有发现新的物相生成,这说明Ta4+部分取代了CeO2晶格中Ce4+的位置生成了Ce0.75Ta0.25O2.Ce0.75Ta0.25O2的ω-扫描和-扫描半高宽带分别是4.38o和6.67o,这表明Ce0.75Ta0.25O2具有良好的面外和面内织构。AES结果表明单层Ce0.75Ta0.25O2的厚度大约为70 nm,在过渡层的表面没有检测到Ni元素,说明该过渡层具有很好的阻止元素扩散的能力。综上说明,Ta掺杂的CeO2过渡层有望成为涂层导体用单层多功能过渡层。 展开更多
关键词 ceo2过渡层 掺杂 涂层导体
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在蓝宝石基片上制备高质量的Tl-2212超导薄膜 被引量:1
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作者 谢清连 阎少林 +8 位作者 方兰 赵新杰 游石头 季鲁 张旭 周铁戈 左涛 岳宏卫 王争 《稀有金属材料与工程》 SCIE EI CAS CSCD 北大核心 2008年第A04期369-372,共4页
在蓝宝石衬底上生长高质量Tl-2212薄膜的制备方法。在最佳退火条件下,对蓝宝石(1102)基片和CeO2缓冲层进行高温热处理,所生长500nm厚的Tl-2212薄膜具有优良的面内和面外取向,薄膜的超导电性得到大幅度提高,其临界转变温度(Tc)达到107.5K... 在蓝宝石衬底上生长高质量Tl-2212薄膜的制备方法。在最佳退火条件下,对蓝宝石(1102)基片和CeO2缓冲层进行高温热处理,所生长500nm厚的Tl-2212薄膜具有优良的面内和面外取向,薄膜的超导电性得到大幅度提高,其临界转变温度(Tc)达到107.5K,在液氮温度下,临界电流密度为(Jc)3.6MA/cm2,微波表面电阻Rs(77K,10GHz)约为263μΩ。 展开更多
关键词 Tl-2212超导薄膜 蓝宝石 ceo2缓冲层
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蓝宝石基片上制备双面Tl_2Ba_2CaCu_2O_8超导薄膜 被引量:1
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作者 游峰 阎少林 +5 位作者 季鲁 谢清连 王争 岳宏卫 赵新杰 方兰 《低温与超导》 CAS CSCD 北大核心 2010年第1期32-36,共5页
在蓝宝石基片上,以CeO2为缓冲层制备了高质量的双面Tl2Ba2CaCu2O8(Tl-2212)超导薄膜。以金属铈靶作为溅射源生长了c轴取向的CeO2缓冲薄膜,并对CeO2薄膜进行了高温处理,有效改善了其结晶质量和表面形貌。采用两步法制备了双面的Tl-2212... 在蓝宝石基片上,以CeO2为缓冲层制备了高质量的双面Tl2Ba2CaCu2O8(Tl-2212)超导薄膜。以金属铈靶作为溅射源生长了c轴取向的CeO2缓冲薄膜,并对CeO2薄膜进行了高温处理,有效改善了其结晶质量和表面形貌。采用两步法制备了双面的Tl-2212超导薄膜。XRD测试显示,薄膜为纯的Tl-2212相,且其晶格c轴垂直于衬底表面。超导薄膜的Tc为106K,Jc(77K,0T)为3.5MA/cm2,微波表面电阻Rs(77K,10GHz)为390μΩ。 展开更多
关键词 Tl-2212超导薄膜 蓝宝石基片 ceo2缓冲层
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