This study explored the performances of CZTS-based thin-film solar cell with three novel buffer layer materials ZnS, CdS, and CdZnS, as well as with variation in thickness of buffer and absorber-layer, doping concentr...This study explored the performances of CZTS-based thin-film solar cell with three novel buffer layer materials ZnS, CdS, and CdZnS, as well as with variation in thickness of buffer and absorber-layer, doping concentrations of absorber-layer material and operating temperature. Our aims focused to identify the most optimal thin-film solar cell structure that offers high efficiency and lower toxicity which are desirable for sustainable and eco-friendly energy sources globally. SCAPS-1D, widely used software for modeling and simulating solar cells, has been used and solar cell fundamental performance parameters such as open-circuited voltage (), short-circuited current density (), fill-factor() and efficiency() have been optimized in this study. Based on our simulation results, it was found that CZTS solar cell with Cd<sub>0.4</sub>Zn<sub>0.6</sub>S as buffer-layer offers the most optimal combination of high efficiency and lower toxicity in comparison to other structure investigated in our study. Although the efficiency of Cd<sub>0.4</sub>Zn<sub>0.6</sub>S, ZnS and CdS are comparable, Cd<sub>0.4</sub>Zn<sub>0.6</sub>S is preferable to use as buffer-layer for its non-toxic property. In addition, evaluation of performance as a function of buffer-layer thickness for Cd<sub>0.4</sub>Zn<sub>0.6</sub>S, ZnS and CdS showed that optimum buffer-layer thickness for Cd<sub>0.4</sub>Zn<sub>0.6</sub>S was in the range from 50 to 150nm while ZnS offered only 50 – 75 nm. Furthermore, the temperature dependence performance parameters evaluation revealed that it is better to operate solar cell at temperature 290K for stable operation with optimum performances. This study would provide valuable insights into design and optimization of nanotechnology-based solar energy technology for minimizing global energy crisis and developing eco-friendly energy sources sustainable and simultaneously.展开更多
采用磁控溅射后硫化的方法制备Cu_2ZnSnS_4(CZTS)薄膜,分别用Zn和Zn S作为锌源,在镀钼的钠钙玻璃衬底上以Zn(或Zn S)/Sn/Cu的顺序制备出不同的CZTS薄膜预制层。首先对预制层进行低温合金,然后以硫粉作为硫源进行高温硫化,得到CZTS薄膜...采用磁控溅射后硫化的方法制备Cu_2ZnSnS_4(CZTS)薄膜,分别用Zn和Zn S作为锌源,在镀钼的钠钙玻璃衬底上以Zn(或Zn S)/Sn/Cu的顺序制备出不同的CZTS薄膜预制层。首先对预制层进行低温合金,然后以硫粉作为硫源进行高温硫化,得到CZTS薄膜。通过X射线衍射仪(XRD)、扫描电镜(SEM)及能谱仪(EDS)分别对所制备薄膜的晶体结构、表面形貌和薄膜组分进行分析表征;并用拉曼光谱表征了CZTS相的纯度。最后用CZTS薄膜制备了太阳电池,发现在预制层中以Zn S作为锌源得到的太阳电池有较高的性能参数,其开路电压:Voc=651 m V,短路电流密度:Jsc=11.4 m A/cm2,光电转换效率达到2.8%。展开更多
The Cu2ZnSnS4 （CZTS）-based solar cell is numerically simulated by a one-dimensional solar cell simulation soft- ware analysis of microelectronic and photonic structures （AMPS-1D）. The device structure used in the ...The Cu2ZnSnS4 （CZTS）-based solar cell is numerically simulated by a one-dimensional solar cell simulation soft- ware analysis of microelectronic and photonic structures （AMPS-1D）. The device structure used in the simulation is Al/ZnO：Al/nZn（O,S）/pCZTS/Mo. The primary motivation of this simulation work is to optimize the composition in the ZnO1-xSx buffer layer, which would yield higher conversion efficiency. By varying S/（S＋O） ratio x, the conduction band offset （CBO） at CZTS/Zn（O,S） interface can range from -0.23 eV to 1.06eV if the full range of the ratio is considered. The optimal CBO of 0.23eV can be achieved when the ZnO1-xSx buffer has an S/（S＋O） ratio of 0.6. The solar cell efficiency first increases with increasing sulfur content and then decreases abruptly for x〉 0.6, which reaches the highest value of 17.55% by our proposed optimal sulfur content x= 0.6. Our results provide guidance in dealing with the ZnO1-xSx buffer layer deposition for high efficiency CZTS solar cells.展开更多
通过溶剂热法,以含有PVP的醇类作溶剂,以CuCl_2·2H_2O、Zn(Ac)_2·2H_2O、SnCl_4·5H_2O作金属源,硫脲作硫源,在一定条件下反应,通过XRD、Raman、SEM、EDS、TEM、UV-Vis以及电化学分析系统研究醇类溶剂溶解度对CZTS颗粒的...通过溶剂热法,以含有PVP的醇类作溶剂,以CuCl_2·2H_2O、Zn(Ac)_2·2H_2O、SnCl_4·5H_2O作金属源,硫脲作硫源,在一定条件下反应,通过XRD、Raman、SEM、EDS、TEM、UV-Vis以及电化学分析系统研究醇类溶剂溶解度对CZTS颗粒的物相、结构、形貌以及光电性能的影响。结果表明:所选溶剂溶解度不同,对得到的CZTS颗粒的结晶性、形貌、原子比以及光电性能均有相应的影响;当选择溶解度为32.1的乙二醇作溶剂时,合成的颗粒结晶性较好,颗粒形貌为表面嵌有薄片的微球,颗粒表面缺陷形态为贫铜富锌结构,光学带隙为1.47 e V,与太阳能电池所需的最佳带隙接近,薄膜电阻率为45.86Ω·m。展开更多
文摘This study explored the performances of CZTS-based thin-film solar cell with three novel buffer layer materials ZnS, CdS, and CdZnS, as well as with variation in thickness of buffer and absorber-layer, doping concentrations of absorber-layer material and operating temperature. Our aims focused to identify the most optimal thin-film solar cell structure that offers high efficiency and lower toxicity which are desirable for sustainable and eco-friendly energy sources globally. SCAPS-1D, widely used software for modeling and simulating solar cells, has been used and solar cell fundamental performance parameters such as open-circuited voltage (), short-circuited current density (), fill-factor() and efficiency() have been optimized in this study. Based on our simulation results, it was found that CZTS solar cell with Cd<sub>0.4</sub>Zn<sub>0.6</sub>S as buffer-layer offers the most optimal combination of high efficiency and lower toxicity in comparison to other structure investigated in our study. Although the efficiency of Cd<sub>0.4</sub>Zn<sub>0.6</sub>S, ZnS and CdS are comparable, Cd<sub>0.4</sub>Zn<sub>0.6</sub>S is preferable to use as buffer-layer for its non-toxic property. In addition, evaluation of performance as a function of buffer-layer thickness for Cd<sub>0.4</sub>Zn<sub>0.6</sub>S, ZnS and CdS showed that optimum buffer-layer thickness for Cd<sub>0.4</sub>Zn<sub>0.6</sub>S was in the range from 50 to 150nm while ZnS offered only 50 – 75 nm. Furthermore, the temperature dependence performance parameters evaluation revealed that it is better to operate solar cell at temperature 290K for stable operation with optimum performances. This study would provide valuable insights into design and optimization of nanotechnology-based solar energy technology for minimizing global energy crisis and developing eco-friendly energy sources sustainable and simultaneously.
文摘采用磁控溅射后硫化的方法制备Cu_2ZnSnS_4(CZTS)薄膜,分别用Zn和Zn S作为锌源,在镀钼的钠钙玻璃衬底上以Zn(或Zn S)/Sn/Cu的顺序制备出不同的CZTS薄膜预制层。首先对预制层进行低温合金,然后以硫粉作为硫源进行高温硫化,得到CZTS薄膜。通过X射线衍射仪(XRD)、扫描电镜(SEM)及能谱仪(EDS)分别对所制备薄膜的晶体结构、表面形貌和薄膜组分进行分析表征;并用拉曼光谱表征了CZTS相的纯度。最后用CZTS薄膜制备了太阳电池,发现在预制层中以Zn S作为锌源得到的太阳电池有较高的性能参数,其开路电压:Voc=651 m V,短路电流密度:Jsc=11.4 m A/cm2,光电转换效率达到2.8%。
基金Supported by the Guiding Project of Strategic Emerging Industries of Fujian Provincial Department of Science and Technology under Grant No 2015H0010the Opening Project of State Key Laboratory of High Performance Ceramics and Superfine Microstructure of Shanghai Institute of Ceramics of Chinese Academy of Sciences under Grant No SKL201404SICthe Natural Science Foundation of Fujian Province under Grant No 2016J01751
文摘The Cu2ZnSnS4 （CZTS）-based solar cell is numerically simulated by a one-dimensional solar cell simulation soft- ware analysis of microelectronic and photonic structures （AMPS-1D）. The device structure used in the simulation is Al/ZnO：Al/nZn（O,S）/pCZTS/Mo. The primary motivation of this simulation work is to optimize the composition in the ZnO1-xSx buffer layer, which would yield higher conversion efficiency. By varying S/（S＋O） ratio x, the conduction band offset （CBO） at CZTS/Zn（O,S） interface can range from -0.23 eV to 1.06eV if the full range of the ratio is considered. The optimal CBO of 0.23eV can be achieved when the ZnO1-xSx buffer has an S/（S＋O） ratio of 0.6. The solar cell efficiency first increases with increasing sulfur content and then decreases abruptly for x〉 0.6, which reaches the highest value of 17.55% by our proposed optimal sulfur content x= 0.6. Our results provide guidance in dealing with the ZnO1-xSx buffer layer deposition for high efficiency CZTS solar cells.
文摘通过溶剂热法,以含有PVP的醇类作溶剂,以CuCl_2·2H_2O、Zn(Ac)_2·2H_2O、SnCl_4·5H_2O作金属源,硫脲作硫源,在一定条件下反应,通过XRD、Raman、SEM、EDS、TEM、UV-Vis以及电化学分析系统研究醇类溶剂溶解度对CZTS颗粒的物相、结构、形貌以及光电性能的影响。结果表明:所选溶剂溶解度不同,对得到的CZTS颗粒的结晶性、形貌、原子比以及光电性能均有相应的影响;当选择溶解度为32.1的乙二醇作溶剂时,合成的颗粒结晶性较好,颗粒形貌为表面嵌有薄片的微球,颗粒表面缺陷形态为贫铜富锌结构,光学带隙为1.47 e V,与太阳能电池所需的最佳带隙接近,薄膜电阻率为45.86Ω·m。
