CZTS(Cu_(2)ZnSnS_(4))is a quaternary semiconductor that is environmentally friendly,less expensive.In this paper,we report on the optimization and fabrication of CZTS-based heterojunction nanodevices for bifunctional ...CZTS(Cu_(2)ZnSnS_(4))is a quaternary semiconductor that is environmentally friendly,less expensive.In this paper,we report on the optimization and fabrication of CZTS-based heterojunction nanodevices for bifunctional applications such as solar cells and photodetectors.CZTS thin films were deposited on top of(Molybdenum)Mo-coated glass substrates via RF sputtering at 100 and 200 W.Rapid thermal processing(RTP)was used at 300,400,and 500℃temperatures.Cd S(cadmium sulphide)was deposited on CZTS using a chemical bath deposition system with 3-and 5-min deposition times.Zn O(zinc oxide)and AZO(aluminium doped zinc oxide)layers were deposited using RF(radio frequency)sputtering to create the solar device.XRD confirms the formation of a tetragonal structure with increased crystallinity due to the use of RTP.Raman reveals the characteristic Raman shift peak associated with CZTS at 336 and 335 cm^(-1).The FESEM shows a relationship with RTP temperature.Surface features,including grain size,vary with RTP temperature.The ideality factor is nearly 2,indicating imperfection in the Mo/CZTS interface.Schottky barrier height estimates range from 0.6 to 0.7 e V.Absorbance and transmittance show a predictable fluctuation with RTP temperature.Photovoltaic device was built using the higher crystalline feature of CZTS in conjunction with Cd S deposited at 3 and 5 min.The efficiency of Cd S deposited after 3 and 5 min was 1.15 and 0.97 percent,respectively.Fabricated devices were used for wavelength-dependent photodetection.This work demonstrated self-powered photodetection.展开更多
采用磁控溅射后硫化的方法制备Cu_2ZnSnS_4(CZTS)薄膜,分别用Zn和Zn S作为锌源,在镀钼的钠钙玻璃衬底上以Zn(或Zn S)/Sn/Cu的顺序制备出不同的CZTS薄膜预制层。首先对预制层进行低温合金,然后以硫粉作为硫源进行高温硫化,得到CZTS薄膜...采用磁控溅射后硫化的方法制备Cu_2ZnSnS_4(CZTS)薄膜,分别用Zn和Zn S作为锌源,在镀钼的钠钙玻璃衬底上以Zn(或Zn S)/Sn/Cu的顺序制备出不同的CZTS薄膜预制层。首先对预制层进行低温合金,然后以硫粉作为硫源进行高温硫化,得到CZTS薄膜。通过X射线衍射仪(XRD)、扫描电镜(SEM)及能谱仪(EDS)分别对所制备薄膜的晶体结构、表面形貌和薄膜组分进行分析表征;并用拉曼光谱表征了CZTS相的纯度。最后用CZTS薄膜制备了太阳电池,发现在预制层中以Zn S作为锌源得到的太阳电池有较高的性能参数,其开路电压:Voc=651 m V,短路电流密度:Jsc=11.4 m A/cm2,光电转换效率达到2.8%。展开更多
文摘CZTS(Cu_(2)ZnSnS_(4))is a quaternary semiconductor that is environmentally friendly,less expensive.In this paper,we report on the optimization and fabrication of CZTS-based heterojunction nanodevices for bifunctional applications such as solar cells and photodetectors.CZTS thin films were deposited on top of(Molybdenum)Mo-coated glass substrates via RF sputtering at 100 and 200 W.Rapid thermal processing(RTP)was used at 300,400,and 500℃temperatures.Cd S(cadmium sulphide)was deposited on CZTS using a chemical bath deposition system with 3-and 5-min deposition times.Zn O(zinc oxide)and AZO(aluminium doped zinc oxide)layers were deposited using RF(radio frequency)sputtering to create the solar device.XRD confirms the formation of a tetragonal structure with increased crystallinity due to the use of RTP.Raman reveals the characteristic Raman shift peak associated with CZTS at 336 and 335 cm^(-1).The FESEM shows a relationship with RTP temperature.Surface features,including grain size,vary with RTP temperature.The ideality factor is nearly 2,indicating imperfection in the Mo/CZTS interface.Schottky barrier height estimates range from 0.6 to 0.7 e V.Absorbance and transmittance show a predictable fluctuation with RTP temperature.Photovoltaic device was built using the higher crystalline feature of CZTS in conjunction with Cd S deposited at 3 and 5 min.The efficiency of Cd S deposited after 3 and 5 min was 1.15 and 0.97 percent,respectively.Fabricated devices were used for wavelength-dependent photodetection.This work demonstrated self-powered photodetection.
文摘采用磁控溅射后硫化的方法制备Cu_2ZnSnS_4(CZTS)薄膜,分别用Zn和Zn S作为锌源,在镀钼的钠钙玻璃衬底上以Zn(或Zn S)/Sn/Cu的顺序制备出不同的CZTS薄膜预制层。首先对预制层进行低温合金,然后以硫粉作为硫源进行高温硫化,得到CZTS薄膜。通过X射线衍射仪(XRD)、扫描电镜(SEM)及能谱仪(EDS)分别对所制备薄膜的晶体结构、表面形貌和薄膜组分进行分析表征;并用拉曼光谱表征了CZTS相的纯度。最后用CZTS薄膜制备了太阳电池,发现在预制层中以Zn S作为锌源得到的太阳电池有较高的性能参数,其开路电压:Voc=651 m V,短路电流密度:Jsc=11.4 m A/cm2,光电转换效率达到2.8%。
