This paper presents an ultra-low-power area-efficient non-volatile memory（NVM） in a 0.18μm singlepoly standard CMOS process for passive radio frequency identification（RFID） tags.In the memory cell,a novel low-pow...This paper presents an ultra-low-power area-efficient non-volatile memory（NVM） in a 0.18μm singlepoly standard CMOS process for passive radio frequency identification（RFID） tags.In the memory cell,a novel low-power operation method is proposed to realize bi-directional Fowler-Nordheim tunneling during write operation. Furthermore,the cell is designed with PMOS transistors and coupling capacitors to minimize its area.In order to improve its reliability,the cell consists of double floating gates to store the data,and the 1 kbit NVM was implemented in a 0.18μm single-poly standard CMOS process.The area of the memory cell and 1 kbit memory array is 96μm^2 and 0.12 mm^2,respectively.The measured results indicate that the program/erase voltage ranges from 5 to 6 V.The power consumption of the read/write operation is 0.19μW/0.69μW at a read/write rate of （268 kb/s）/（3.0 kb/s）.展开更多
基金supported by the National Key Technology Research and Development Program of the Ministry of Science and Technology of China(No.2012BAH20B02)the National High Technology Research and Development Program of China(No.2012AA012301)the National Science and Technology Major Projects of the Ministry of Science and Technology of China(No.2012ZX03004007-002)
文摘This paper presents an ultra-low-power area-efficient non-volatile memory（NVM） in a 0.18μm singlepoly standard CMOS process for passive radio frequency identification（RFID） tags.In the memory cell,a novel low-power operation method is proposed to realize bi-directional Fowler-Nordheim tunneling during write operation. Furthermore,the cell is designed with PMOS transistors and coupling capacitors to minimize its area.In order to improve its reliability,the cell consists of double floating gates to store the data,and the 1 kbit NVM was implemented in a 0.18μm single-poly standard CMOS process.The area of the memory cell and 1 kbit memory array is 96μm^2 and 0.12 mm^2,respectively.The measured results indicate that the program/erase voltage ranges from 5 to 6 V.The power consumption of the read/write operation is 0.19μW/0.69μW at a read/write rate of （268 kb/s）/（3.0 kb/s）.
