This study investigates the effects of displacement damage on the dark signal of a pinned photodiode CMOS image sensor(CIS)following irradiation with back-streaming white neutrons from white neutron sources at the Chi...This study investigates the effects of displacement damage on the dark signal of a pinned photodiode CMOS image sensor(CIS)following irradiation with back-streaming white neutrons from white neutron sources at the China spallation neutron source(CSNS)and Xi'an pulsed reactor(XAPR).The mean dark signal,dark signal non-uniformity(DSNU),dark signal distribution,and hot pixels of the CIS were compared between the CSNS back-n and XAPR neutron irradiations.The nonionizing energy loss and energy distribution of primary knock-on atoms in silicon,induced by neutrons,were calculated using the open-source package Geant4.An analysis combining experimental and simulation results showed a noticeable proportionality between the increase in the mean dark signal and the displacement damage dose(DDD).Additionally,neutron energies influence DSNU,dark signal distribution,and hot pixels.High neutron energies at the same DDD level may lead to pronounced dark signal non-uniformity and elevated hot pixel values.展开更多
The Complementary Metal-Oxide Semiconductor(CMOS)image sensor is a critical component with the function of providing accurate positioning in many space application systems.Under long-time operation in space environmen...The Complementary Metal-Oxide Semiconductor(CMOS)image sensor is a critical component with the function of providing accurate positioning in many space application systems.Under long-time operation in space environments,there are radiation related degradation and var-ious uncertainties affecting the positioning accuracy of CMOS image sensors,which further leads to a reliability reduction of CMOS image sensors.Obviously,the reliability of CMOS image sensors is related to their specified function,degradation,and uncertainties;however,current research has not fully described this relationship.In this paper,a comprehensive approach to reliability modelling of CMOs image sensors is proposed based on the reliability science principles.Firstly,the perfor-mance margin modelling of centroid positioning accuracy is conducted.Then,the degradation model of CMOS image sensors is derived considering the dark current increase induced by the total ionizing dose effects.Finally,various uncertainties are analyzed and quantified,and the measure-ment equation of reliability is proposed.A case study of a CMOS image sensor is conducted to apply the proposed method,and the sensitivity analysis can provide suggestions for design and use of CMOS image sensors to ensure reliability.A simulation study is conducted to present the advantages oftheproposed comprehensive approach.展开更多
Traditional chaotic maps struggle with narrow chaotic ranges and inefficiencies,limiting their use for lightweight,secure image encryption in resource-constrained Wireless Sensor Networks(WSNs).We propose the SPCM,a n...Traditional chaotic maps struggle with narrow chaotic ranges and inefficiencies,limiting their use for lightweight,secure image encryption in resource-constrained Wireless Sensor Networks(WSNs).We propose the SPCM,a novel one-dimensional discontinuous chaotic system integrating polynomial and sine functions,leveraging a piecewise function to achieve a broad chaotic range()and a high Lyapunov exponent(5.04).Validated through nine benchmarks,including standard randomness tests,Diehard tests,and Shannon entropy(3.883),SPCM demonstrates superior randomness and high sensitivity to initial conditions.Applied to image encryption,SPCM achieves 0.152582 s(39%faster than some techniques)and 433.42 KB/s throughput(134%higher than some techniques),setting new benchmarks for chaotic map-based methods in WSNs.Chaos-based permutation and exclusive or(XOR)diffusion yield near-zero correlation in encrypted images,ensuring strong resistance to Statistical Attacks(SA)and accurate recovery.SPCM also exhibits a strong avalanche effect(bit difference),making it an efficient,secure solution for WSNs in domains like healthcare and smart cities.展开更多
In-optical-sensor computing architectures based on neuro-inspired optical sensor arrays have become key milestones for in-sensor artificial intelligence(AI)technology,enabling intelligent vision sensing and extensive ...In-optical-sensor computing architectures based on neuro-inspired optical sensor arrays have become key milestones for in-sensor artificial intelligence(AI)technology,enabling intelligent vision sensing and extensive data processing.These architectures must demonstrate potential advantages in terms of mass production and complementary metal oxide semiconductor compatibility.Here,we introduce a visible-light-driven neuromorphic vision system that integrates front-end retinomorphic photosensors with a back-end artificial neural network(ANN),employing a single neuro-inspired indium-g allium-zinc-oxide photo transistor(NIP)featuring an aluminum sensitization layer(ASL).By methodically adjusting the ASL coverage on IGZO phototransistors,a fast-switching response-type and a synaptic response-type of IGZO photo transistors are successfully developed.Notably,the fabricated NIP shows a remarkable retina-like photoinduced synaptic plasticity under wavelengths up to 635 nm,with over256-states,weight update nonlinearity below 0.1,and a dynamic range of 64.01.Owing to this technology,a 6×6 neuro-inspired optical image sensor array with the NIP can perform highly integrated sensing,memory,and preprocessing functions,including contrast enhancement,and handwritten digit image recognition.The demonstrated prototype highlights the potential for efficient hardware implementations in in-sensor AI technologies.展开更多
Daytime star images captured by dedicated near-space star sensors are characterized by short exposures,high noise,and low Signal-to-Noise Ratios(SNRs).Such imaging is also affected by atmospheric turbulence,causing op...Daytime star images captured by dedicated near-space star sensors are characterized by short exposures,high noise,and low Signal-to-Noise Ratios(SNRs).Such imaging is also affected by atmospheric turbulence,causing optical phenomena,such as scintillation,distortion,and jitter.This causes difficulty in recording high-precision star images during the daytime.This study proposes an adaptive star point extraction method based on dynamically predicting stars'positions.First,it predicts the approximate position of stars based on the star catalog,sensor attitude,observation time,and other information,improving the extraction accuracy.Second,it employs a regional SNR sorting method that adaptively selects star images with higher SNRs,suppressing the scintillation effect and enhancing the SNR of star images.Third,depending on the star's motion trajectory characteristics on the image plane,it utilizes the centroid smoothing method for extraction,thus overcoming the impact of star drift.Field experiments demonstrate that the proposed method can effectively overcome star scintillation,drift,and irregular imaging caused by atmospheric turbulence,achieving a 100%success rate.Moreover,the extraction accuracy improves by more than 80%compared to traditional adaptive methods,attaining a value of 0.05 pixels(0.5"),thereby meeting the requirements of daytime astronomical attitude determination and positioning.展开更多
This paper presents an enhanced version of the correlation-driven dual-branch feature decomposition framework(CDDFuse)for fusing low-and high-exposure images captured by the G400BSI sensor.We introduce a novel neural ...This paper presents an enhanced version of the correlation-driven dual-branch feature decomposition framework(CDDFuse)for fusing low-and high-exposure images captured by the G400BSI sensor.We introduce a novel neural long-term memory(NLM)module into the CDDFuse architecture to improve feature extraction by leveraging persistent global feature representations across image sequences.The proposed method effectively preserves dynamic range and structural details,and is evaluated using a new metric,the ATEF dynamic range preservation index(ATEF-DRPI).Experimental results on a G400BSI dataset demonstrate superior fusion quality,with ATEF-DRPI scores of 0.90,a 12.5%improvement over that of the baseline CDDFuse(0.80),indicating better detail retention in bright and dark regions.This work advances image fusion techniques for extreme lighting conditions,offering improved performance for downstream vision tasks.展开更多
Various novel conjugated polymers(CPs)have been developed for organic photodetectors(OPDs),but their application to practical image sensors such as X-ray,R/G/B,and fingerprint sensors is rare.In this article,we report...Various novel conjugated polymers(CPs)have been developed for organic photodetectors(OPDs),but their application to practical image sensors such as X-ray,R/G/B,and fingerprint sensors is rare.In this article,we report the entire process from the synthesis and molecular engineering of novel CPs to the development of OPDs and fingerprint image sensors.We synthesized six benzo[1,2-d:4,5-d’]bis(oxazole)(BBO)-based CPs by modifying the alkyl side chains of the CPs.Several relationships between the molecular structure and the OPD performance were revealed,and increasing the number of linear octyl side chains on the conjugated backbone was the best way to improve Jph and reduce Jd in the OPDs.The optimized CP demonstrated promising OPD performance with a responsivity(R)of 0.22 A/W,specific detectivity(D^(*))of 1.05×10^(13)Jones at a bias of-1 V,rising/falling response time of 2.9/6.9μs,and cut-off frequency(f_(-3dB))of 134 kHz under collimated 530 nm LED irradiation.Finally,a fingerprint image sensor was fabricated by stacking the POTB1-based OPD layer on the organic thin-film transistors(318 ppi).The image contrast caused by the valleys and ridges in the fingerprints was obtained as a digital signal.展开更多
A low-power-consumption 9bit 10MS/s pipeline ADC,used in a CMOS image sensor,is proposed. In the design, the decrease of power consumption is achieved by applying low-power-consumption and large-output-swing amplifier...A low-power-consumption 9bit 10MS/s pipeline ADC,used in a CMOS image sensor,is proposed. In the design, the decrease of power consumption is achieved by applying low-power-consumption and large-output-swing amplifiers with gain boost structure, and biasing all the cells with the same voltage bias source, which requires careful layout design and large capacitors. In addition,capacitor array DAC is also applied to reduce power consumption,and low threshold voltage MOS transistors are used to achieve a large signal processing range. The ADC was implemented in a 0.18μm 4M-1 P CMOS process,and the experimental results indicate that it consumes only 7mW, which is much less than general pipeline ADCs. The ADC was used in a 300000 pixels CMOS image sensor.展开更多
A new photodetector--bipolar junction photogate transistor is presented for CMOS image sensor and its analytical model is also established.With the technical parameter of the 0.6μm CMOS process,the bipolar junction p...A new photodetector--bipolar junction photogate transistor is presented for CMOS image sensor and its analytical model is also established.With the technical parameter of the 0.6μm CMOS process,the bipolar junction photogate transistor is analyzed and simulated.The simulated results illustrate that the bipolar junction photogate transistor has the similar characteristics of the traditional photogate transistor.The photocurrent density of the bipolar junction photogate transistor increases exponentially with the incidence light power due to introducing the injection p+n junction.Its characteristic of blue response is rather improved compared to the traditional photogate transistor that benefits to increase the color photograph made up of the red,the green,and the blue.展开更多
A single CMOS image sensor based on a 0.35μm process along with its design and implementation is introduced. The architecture of an active pixel sensor is used in the chip. The fill factor of a pixel cell can reach 4...A single CMOS image sensor based on a 0.35μm process along with its design and implementation is introduced. The architecture of an active pixel sensor is used in the chip. The fill factor of a pixel cell can reach 43%,higher than the traditional factor of 30%. Moreover, compared with the conventional method whose fixed pattern noise （FPN） is around 0.5%, a dynamic digital double sampling technique is developed, which possesses simpler circuit architecture and a better FPN suppression outcome. The CMOS image sensor chip is implemented in the 0.35μm mixed signal process of a Chartered by MPW. The experimental results show that the chip operates welt,with an FPN of about 0.17%.展开更多
The quality of dark output images from the CMOS (complementarymetal oxide semiconductor) black and white (B & W) digital imagesensors captured before and after γ-ray irradiation was studied. Thecharacteristic par...The quality of dark output images from the CMOS (complementarymetal oxide semiconductor) black and white (B & W) digital imagesensors captured before and after γ-ray irradiation was studied. Thecharacteristic parameters of the dark output images captured atdifferent radiation dose, e.g. average brightness and itsnon-uniformity of dark out- put images, were analyzed by our testsoftware. The primary explanation for the change of the parameterswith the radi- ation dose was given.展开更多
A double sampling circuit to eliminating fixed pattern noise(FPN) in CMOS image sensor (CIS) is presented. Double sampling is implemented by column switch capacitor amplifier directly, and offset compensation is added...A double sampling circuit to eliminating fixed pattern noise(FPN) in CMOS image sensor (CIS) is presented. Double sampling is implemented by column switch capacitor amplifier directly, and offset compensation is added to the amplifier to suppress column FPN. The amplifier is embedded in a 64×64 CIS and successfully fabricated with chartered 0.35 μm process. Theory analysis and circuit simulation indicate that FPN can be suppressed from millivolt to microvolt. Test results show that FPN is smaller than one least-significant bit of 8 bit ADC. FPN is reduced to an acceptable level with double sampling technique implemented with switch capacitor amplifier.展开更多
A novel CMOS image sensor(CIS) pinned photodiode(PPD) pixel, named as O-T pixel, is proposed and investigated by TCAD simulations. Compared with the conventional PPD pixel, the proposed pixel features the overlapping ...A novel CMOS image sensor(CIS) pinned photodiode(PPD) pixel, named as O-T pixel, is proposed and investigated by TCAD simulations. Compared with the conventional PPD pixel, the proposed pixel features the overlapping gate(OG)and the temporary storage diffusing(TSD) region, based on which the several-nanosecond-level charge transfer could be achieved and the complete charge transfer from the PPD to the floating node(FD) could be realized. And systematic analyses of the influence of the doping conditions of the proposed processes, the OG length, and the photodiode length on the transfer performances of the proposed pixel are conducted. Optimized simulation results show that the total charge transfer time could reach about 5.862 ns from the photodiode to the sensed node and the corresponding charge transfer efficiency could reach as high as 99.995% in the proposed pixel with 10 μm long photodiode and 2.22 μm long OG. These results demonstrate a great potential of the proposed pixel in high-speed applications.展开更多
In this paper we report on a study of the CMOS image sensor detection of DNA based on self-assembled nano- metallic particles, which are selectively deposited on the surface of the passive image sensor. The nano-metal...In this paper we report on a study of the CMOS image sensor detection of DNA based on self-assembled nano- metallic particles, which are selectively deposited on the surface of the passive image sensor. The nano-metallic particles effectively block the optical radiation in the visible spectrum of ordinary light source. When such a technical method is applied to DNA detection, the requirement for a special UV light source in the most popular fluorescence is eliminated. The DNA detection methodology is tested on a CMOS sensor chip fabricated using a standard 0.5 gm CMOS process. It is demonstrated that the approach is highly selective to detecting even a signal-base mismatched DNA target with an extremely-low-concentration DNA sample down to 10 pM under an ordinary light source.展开更多
基金supported by the Young Elite Scientists Sponsorship Program by CAST(No.YESS20210441)the National Natural Science Foundation of China(Nos.U2167208,11875223)。
文摘This study investigates the effects of displacement damage on the dark signal of a pinned photodiode CMOS image sensor(CIS)following irradiation with back-streaming white neutrons from white neutron sources at the China spallation neutron source(CSNS)and Xi'an pulsed reactor(XAPR).The mean dark signal,dark signal non-uniformity(DSNU),dark signal distribution,and hot pixels of the CIS were compared between the CSNS back-n and XAPR neutron irradiations.The nonionizing energy loss and energy distribution of primary knock-on atoms in silicon,induced by neutrons,were calculated using the open-source package Geant4.An analysis combining experimental and simulation results showed a noticeable proportionality between the increase in the mean dark signal and the displacement damage dose(DDD).Additionally,neutron energies influence DSNU,dark signal distribution,and hot pixels.High neutron energies at the same DDD level may lead to pronounced dark signal non-uniformity and elevated hot pixel values.
基金the National Natural Science Foundation of China (No.51775020)the Science Challenge Project,China (No.TZ2018007)+1 种基金the National Natural Science Foundation of China (No.62073009)the Fundamental Research Funds for Central Universities,China (No.YWF-19-BJ-J-515).
文摘The Complementary Metal-Oxide Semiconductor(CMOS)image sensor is a critical component with the function of providing accurate positioning in many space application systems.Under long-time operation in space environments,there are radiation related degradation and var-ious uncertainties affecting the positioning accuracy of CMOS image sensors,which further leads to a reliability reduction of CMOS image sensors.Obviously,the reliability of CMOS image sensors is related to their specified function,degradation,and uncertainties;however,current research has not fully described this relationship.In this paper,a comprehensive approach to reliability modelling of CMOs image sensors is proposed based on the reliability science principles.Firstly,the perfor-mance margin modelling of centroid positioning accuracy is conducted.Then,the degradation model of CMOS image sensors is derived considering the dark current increase induced by the total ionizing dose effects.Finally,various uncertainties are analyzed and quantified,and the measure-ment equation of reliability is proposed.A case study of a CMOS image sensor is conducted to apply the proposed method,and the sensitivity analysis can provide suggestions for design and use of CMOS image sensors to ensure reliability.A simulation study is conducted to present the advantages oftheproposed comprehensive approach.
基金supported by the National Research Foundation of Korea(NRF)grant funded by the Korean government Ministry of Science and ICT(MIST)(RS-2022-00165225).
文摘Traditional chaotic maps struggle with narrow chaotic ranges and inefficiencies,limiting their use for lightweight,secure image encryption in resource-constrained Wireless Sensor Networks(WSNs).We propose the SPCM,a novel one-dimensional discontinuous chaotic system integrating polynomial and sine functions,leveraging a piecewise function to achieve a broad chaotic range()and a high Lyapunov exponent(5.04).Validated through nine benchmarks,including standard randomness tests,Diehard tests,and Shannon entropy(3.883),SPCM demonstrates superior randomness and high sensitivity to initial conditions.Applied to image encryption,SPCM achieves 0.152582 s(39%faster than some techniques)and 433.42 KB/s throughput(134%higher than some techniques),setting new benchmarks for chaotic map-based methods in WSNs.Chaos-based permutation and exclusive or(XOR)diffusion yield near-zero correlation in encrypted images,ensuring strong resistance to Statistical Attacks(SA)and accurate recovery.SPCM also exhibits a strong avalanche effect(bit difference),making it an efficient,secure solution for WSNs in domains like healthcare and smart cities.
基金supported by the National Research Foundation of Korea(NRF)Grant funded by the Korea government(MSIT)(Grant No.RS-2023-00256917)Samsung Display。
文摘In-optical-sensor computing architectures based on neuro-inspired optical sensor arrays have become key milestones for in-sensor artificial intelligence(AI)technology,enabling intelligent vision sensing and extensive data processing.These architectures must demonstrate potential advantages in terms of mass production and complementary metal oxide semiconductor compatibility.Here,we introduce a visible-light-driven neuromorphic vision system that integrates front-end retinomorphic photosensors with a back-end artificial neural network(ANN),employing a single neuro-inspired indium-g allium-zinc-oxide photo transistor(NIP)featuring an aluminum sensitization layer(ASL).By methodically adjusting the ASL coverage on IGZO phototransistors,a fast-switching response-type and a synaptic response-type of IGZO photo transistors are successfully developed.Notably,the fabricated NIP shows a remarkable retina-like photoinduced synaptic plasticity under wavelengths up to 635 nm,with over256-states,weight update nonlinearity below 0.1,and a dynamic range of 64.01.Owing to this technology,a 6×6 neuro-inspired optical image sensor array with the NIP can perform highly integrated sensing,memory,and preprocessing functions,including contrast enhancement,and handwritten digit image recognition.The demonstrated prototype highlights the potential for efficient hardware implementations in in-sensor AI technologies.
基金funded by the National Natural Science Foundation of China(Nos.42374011,42074013)through the Natural Science Foundation’s Outstanding Youth Fund Program of Henan Province,China(Nos.242300421150,242300421151)。
文摘Daytime star images captured by dedicated near-space star sensors are characterized by short exposures,high noise,and low Signal-to-Noise Ratios(SNRs).Such imaging is also affected by atmospheric turbulence,causing optical phenomena,such as scintillation,distortion,and jitter.This causes difficulty in recording high-precision star images during the daytime.This study proposes an adaptive star point extraction method based on dynamically predicting stars'positions.First,it predicts the approximate position of stars based on the star catalog,sensor attitude,observation time,and other information,improving the extraction accuracy.Second,it employs a regional SNR sorting method that adaptively selects star images with higher SNRs,suppressing the scintillation effect and enhancing the SNR of star images.Third,depending on the star's motion trajectory characteristics on the image plane,it utilizes the centroid smoothing method for extraction,thus overcoming the impact of star drift.Field experiments demonstrate that the proposed method can effectively overcome star scintillation,drift,and irregular imaging caused by atmospheric turbulence,achieving a 100%success rate.Moreover,the extraction accuracy improves by more than 80%compared to traditional adaptive methods,attaining a value of 0.05 pixels(0.5"),thereby meeting the requirements of daytime astronomical attitude determination and positioning.
文摘This paper presents an enhanced version of the correlation-driven dual-branch feature decomposition framework(CDDFuse)for fusing low-and high-exposure images captured by the G400BSI sensor.We introduce a novel neural long-term memory(NLM)module into the CDDFuse architecture to improve feature extraction by leveraging persistent global feature representations across image sequences.The proposed method effectively preserves dynamic range and structural details,and is evaluated using a new metric,the ATEF dynamic range preservation index(ATEF-DRPI).Experimental results on a G400BSI dataset demonstrate superior fusion quality,with ATEF-DRPI scores of 0.90,a 12.5%improvement over that of the baseline CDDFuse(0.80),indicating better detail retention in bright and dark regions.This work advances image fusion techniques for extreme lighting conditions,offering improved performance for downstream vision tasks.
基金funded by the National Research Foundation(NRF)of Korea(2020M3H4A3081816,RS-2023-00304936,and RS-2024-00398065).
文摘Various novel conjugated polymers(CPs)have been developed for organic photodetectors(OPDs),but their application to practical image sensors such as X-ray,R/G/B,and fingerprint sensors is rare.In this article,we report the entire process from the synthesis and molecular engineering of novel CPs to the development of OPDs and fingerprint image sensors.We synthesized six benzo[1,2-d:4,5-d’]bis(oxazole)(BBO)-based CPs by modifying the alkyl side chains of the CPs.Several relationships between the molecular structure and the OPD performance were revealed,and increasing the number of linear octyl side chains on the conjugated backbone was the best way to improve Jph and reduce Jd in the OPDs.The optimized CP demonstrated promising OPD performance with a responsivity(R)of 0.22 A/W,specific detectivity(D^(*))of 1.05×10^(13)Jones at a bias of-1 V,rising/falling response time of 2.9/6.9μs,and cut-off frequency(f_(-3dB))of 134 kHz under collimated 530 nm LED irradiation.Finally,a fingerprint image sensor was fabricated by stacking the POTB1-based OPD layer on the organic thin-film transistors(318 ppi).The image contrast caused by the valleys and ridges in the fingerprints was obtained as a digital signal.
文摘A low-power-consumption 9bit 10MS/s pipeline ADC,used in a CMOS image sensor,is proposed. In the design, the decrease of power consumption is achieved by applying low-power-consumption and large-output-swing amplifiers with gain boost structure, and biasing all the cells with the same voltage bias source, which requires careful layout design and large capacitors. In addition,capacitor array DAC is also applied to reduce power consumption,and low threshold voltage MOS transistors are used to achieve a large signal processing range. The ADC was implemented in a 0.18μm 4M-1 P CMOS process,and the experimental results indicate that it consumes only 7mW, which is much less than general pipeline ADCs. The ADC was used in a 300000 pixels CMOS image sensor.
文摘A new photodetector--bipolar junction photogate transistor is presented for CMOS image sensor and its analytical model is also established.With the technical parameter of the 0.6μm CMOS process,the bipolar junction photogate transistor is analyzed and simulated.The simulated results illustrate that the bipolar junction photogate transistor has the similar characteristics of the traditional photogate transistor.The photocurrent density of the bipolar junction photogate transistor increases exponentially with the incidence light power due to introducing the injection p+n junction.Its characteristic of blue response is rather improved compared to the traditional photogate transistor that benefits to increase the color photograph made up of the red,the green,and the blue.
文摘A single CMOS image sensor based on a 0.35μm process along with its design and implementation is introduced. The architecture of an active pixel sensor is used in the chip. The fill factor of a pixel cell can reach 43%,higher than the traditional factor of 30%. Moreover, compared with the conventional method whose fixed pattern noise （FPN） is around 0.5%, a dynamic digital double sampling technique is developed, which possesses simpler circuit architecture and a better FPN suppression outcome. The CMOS image sensor chip is implemented in the 0.35μm mixed signal process of a Chartered by MPW. The experimental results show that the chip operates welt,with an FPN of about 0.17%.
基金the National Natural Science Foundation of China (No.10075029).
文摘The quality of dark output images from the CMOS (complementarymetal oxide semiconductor) black and white (B & W) digital imagesensors captured before and after γ-ray irradiation was studied. Thecharacteristic parameters of the dark output images captured atdifferent radiation dose, e.g. average brightness and itsnon-uniformity of dark out- put images, were analyzed by our testsoftware. The primary explanation for the change of the parameterswith the radi- ation dose was given.
基金Supported by National Natural Science Foundation of China (No.60576025).
文摘A double sampling circuit to eliminating fixed pattern noise(FPN) in CMOS image sensor (CIS) is presented. Double sampling is implemented by column switch capacitor amplifier directly, and offset compensation is added to the amplifier to suppress column FPN. The amplifier is embedded in a 64×64 CIS and successfully fabricated with chartered 0.35 μm process. Theory analysis and circuit simulation indicate that FPN can be suppressed from millivolt to microvolt. Test results show that FPN is smaller than one least-significant bit of 8 bit ADC. FPN is reduced to an acceptable level with double sampling technique implemented with switch capacitor amplifier.
基金Project supported by the National Natural Science Foundation of China(Grant No.61574112)。
文摘A novel CMOS image sensor(CIS) pinned photodiode(PPD) pixel, named as O-T pixel, is proposed and investigated by TCAD simulations. Compared with the conventional PPD pixel, the proposed pixel features the overlapping gate(OG)and the temporary storage diffusing(TSD) region, based on which the several-nanosecond-level charge transfer could be achieved and the complete charge transfer from the PPD to the floating node(FD) could be realized. And systematic analyses of the influence of the doping conditions of the proposed processes, the OG length, and the photodiode length on the transfer performances of the proposed pixel are conducted. Optimized simulation results show that the total charge transfer time could reach about 5.862 ns from the photodiode to the sensed node and the corresponding charge transfer efficiency could reach as high as 99.995% in the proposed pixel with 10 μm long photodiode and 2.22 μm long OG. These results demonstrate a great potential of the proposed pixel in high-speed applications.
基金Project supported by the Key Program of the National Natural Science Foundation of China (Grant No. 61036004)the Shenzhen Science & Technology Foundation, China (Grant No. CXB201005250031A)+1 种基金the Fundamental Research Project of Shenzhen Science & Technology Foundation, China (Grant No. JC201005280670A)the International Collaboration Project of Shenzhen Science & Technology Foundation, China (Grant No. ZYA2010006030006A)
文摘In this paper we report on a study of the CMOS image sensor detection of DNA based on self-assembled nano- metallic particles, which are selectively deposited on the surface of the passive image sensor. The nano-metallic particles effectively block the optical radiation in the visible spectrum of ordinary light source. When such a technical method is applied to DNA detection, the requirement for a special UV light source in the most popular fluorescence is eliminated. The DNA detection methodology is tested on a CMOS sensor chip fabricated using a standard 0.5 gm CMOS process. It is demonstrated that the approach is highly selective to detecting even a signal-base mismatched DNA target with an extremely-low-concentration DNA sample down to 10 pM under an ordinary light source.
