利用导电原子力显微镜(conductive atomic force microscope,c-AFM)的扭转共振隧穿电流模式,在绝缘衬底云母上对还原石墨烯(rGO)和DNA构成的复合体导电性做了初步的测量。测量结果表明,石墨烯能很好地吸附双链DNA分子形成连接复合体,c-...利用导电原子力显微镜(conductive atomic force microscope,c-AFM)的扭转共振隧穿电流模式,在绝缘衬底云母上对还原石墨烯(rGO)和DNA构成的复合体导电性做了初步的测量。测量结果表明,石墨烯能很好地吸附双链DNA分子形成连接复合体,c-AFM实验证明复合体中的双链DNA分子不具有长程电子输运能力。石墨烯-DNA复合体电导能力的测量对利用石墨烯及DNA分子进行分子器件构建研究具有参考价值,同时实验测量方法具有一定的实用意义。展开更多
PANI nanodots array was fabricated in AAO template with potentiostatic method in a short time.The topographic image of PANI nanodots array was characterized by scanning electron microscopy(SEM) and atomic force micros...PANI nanodots array was fabricated in AAO template with potentiostatic method in a short time.The topographic image of PANI nanodots array was characterized by scanning electron microscopy(SEM) and atomic force microscopy(AFM).The I-V characteristics of conducting PANI nanodots array was measured with conducting atomic force microscope(C-AFM) in atmosphere at room temperature.Coulomb staircase phenomena was observed in the I-V curves.展开更多
Two-dimensional(2D) materials and their heterostructures have attracted a lot of attention due to their unique electronic and optical properties. MoS_(2) as the most typical 2D semiconductors has great application pot...Two-dimensional(2D) materials and their heterostructures have attracted a lot of attention due to their unique electronic and optical properties. MoS_(2) as the most typical 2D semiconductors has great application potential in thin film transistors, photodetector, hydrogen evolution reaction, memory device, etc. However, the performance of MoS_(2) devices is limited by the contact resistance and the improvement of its contact quality is important. In this work, we report the experimental investigation of pressure-enhanced contact quality between monolayer MoS_(2) and graphite by conductive atom force microscope(C-AFM). It was found that at high pressure, the contact quality between graphite and MoS_(2) is significantly improved. This pressure-mediated contact quality improvement between MoS_(2) and graphite comes from the enhanced charge transfer between MoS_(2) and graphite when MoS_(2) is stretched. Our results provide a new way to enhance the contact quality between MoS_(2) and graphite for further applications.展开更多
In this work, we investigated resistive switching behavior of CrO<sub>x</sub> thin films grown by using sputtering technique. Conventional I-V measurements obtained from Ag/CrO<sub>x</sub>/Pt/T...In this work, we investigated resistive switching behavior of CrO<sub>x</sub> thin films grown by using sputtering technique. Conventional I-V measurements obtained from Ag/CrO<sub>x</sub>/Pt/Ti/SiO<sub>2</sub>/Si structures depict the bipolar switching behavior, which is controlled by formation/dissolution processes of Ag conducting filaments through electrochemical redox reaction under external electric field driven. Conductive atomic force microscopy (C-AFM) technique provides the valuable mapping images of existing Ag filaments at low resistance state as well as the characteristics of filament distributions and diameters. This study also reveals that where the higher amplitude of topography is, the easier possibility of forming conducting filament paths is on CrO<sub>x</sub> surface films.展开更多
文摘利用导电原子力显微镜(conductive atomic force microscope,c-AFM)的扭转共振隧穿电流模式,在绝缘衬底云母上对还原石墨烯(rGO)和DNA构成的复合体导电性做了初步的测量。测量结果表明,石墨烯能很好地吸附双链DNA分子形成连接复合体,c-AFM实验证明复合体中的双链DNA分子不具有长程电子输运能力。石墨烯-DNA复合体电导能力的测量对利用石墨烯及DNA分子进行分子器件构建研究具有参考价值,同时实验测量方法具有一定的实用意义。
文摘PANI nanodots array was fabricated in AAO template with potentiostatic method in a short time.The topographic image of PANI nanodots array was characterized by scanning electron microscopy(SEM) and atomic force microscopy(AFM).The I-V characteristics of conducting PANI nanodots array was measured with conducting atomic force microscope(C-AFM) in atmosphere at room temperature.Coulomb staircase phenomena was observed in the I-V curves.
基金Project supported by the National Key R&D Program,China(Grant No.2016YFA0300904)the Key Research Program of Frontier Sciences of the Chinese Academy of Sciences(Grant No.QYZDB-SSW-SLH004)+1 种基金the Strategic Priority Research Program(B)of the Chinese Academy of Sciences(Grant Nos.XDPB06 and XDB07010100)the National Natural Science Foundation of China(Grant Nos.61734001 and 51572289)
文摘Two-dimensional(2D) materials and their heterostructures have attracted a lot of attention due to their unique electronic and optical properties. MoS_(2) as the most typical 2D semiconductors has great application potential in thin film transistors, photodetector, hydrogen evolution reaction, memory device, etc. However, the performance of MoS_(2) devices is limited by the contact resistance and the improvement of its contact quality is important. In this work, we report the experimental investigation of pressure-enhanced contact quality between monolayer MoS_(2) and graphite by conductive atom force microscope(C-AFM). It was found that at high pressure, the contact quality between graphite and MoS_(2) is significantly improved. This pressure-mediated contact quality improvement between MoS_(2) and graphite comes from the enhanced charge transfer between MoS_(2) and graphite when MoS_(2) is stretched. Our results provide a new way to enhance the contact quality between MoS_(2) and graphite for further applications.
文摘In this work, we investigated resistive switching behavior of CrO<sub>x</sub> thin films grown by using sputtering technique. Conventional I-V measurements obtained from Ag/CrO<sub>x</sub>/Pt/Ti/SiO<sub>2</sub>/Si structures depict the bipolar switching behavior, which is controlled by formation/dissolution processes of Ag conducting filaments through electrochemical redox reaction under external electric field driven. Conductive atomic force microscopy (C-AFM) technique provides the valuable mapping images of existing Ag filaments at low resistance state as well as the characteristics of filament distributions and diameters. This study also reveals that where the higher amplitude of topography is, the easier possibility of forming conducting filament paths is on CrO<sub>x</sub> surface films.
