运用模拟软件AFORS-HET对TCO/a-Si∶H(n)/a-Si∶H(i)/c-Si(p)/Ag结构的异质结(HIT)太阳电池进行仿真,分析其光伏输出特性随发射层掺杂浓度、晶硅衬底掺杂浓度、透明导电氧化物薄膜(TCO)的选择以及TCO功函数的变化规律。结果显示,当发射...运用模拟软件AFORS-HET对TCO/a-Si∶H(n)/a-Si∶H(i)/c-Si(p)/Ag结构的异质结(HIT)太阳电池进行仿真,分析其光伏输出特性随发射层掺杂浓度、晶硅衬底掺杂浓度、透明导电氧化物薄膜(TCO)的选择以及TCO功函数的变化规律。结果显示,当发射层掺杂浓度大于1.0×1020cm^(-3),晶硅衬底掺杂浓度大于1.2×10^(16)cm^(-3),以ZnO为TCO层且Zn O的功函数低于4.4 e V时,电池的开路电压、短路电流密度、填充因子及电池转换效率达到最优值,光电转换效率最高达到19.18%。展开更多
In this work, the AFORS-HET digital simulation software was used to calculate the electrical characteristics of the cell/n-ZnO/i-ZnO/n-Zn (O, S)/p-CIGSe<sub>2</sub>/p + -MoSe<sub>2</sub>/Mo/SLG...In this work, the AFORS-HET digital simulation software was used to calculate the electrical characteristics of the cell/n-ZnO/i-ZnO/n-Zn (O, S)/p-CIGSe<sub>2</sub>/p + -MoSe<sub>2</sub>/Mo/SLG. When the thickness of the CIGSe<sub>2</sub> absorber is between 3.5 and 1.5 μm, the efficiency of the cell with an interfacial layer of MoSe<sub>2</sub> remains almost constant, with an efficiency of about 24.6%, higher to that of a conventional cell which is 23.4% for a thickness of 1.5 μm of CIGSe<sub>2</sub>. To achieve the expected results, the MoSe<sub>2</sub> layer must be very thin less than or equal to 30 nm. In addition, a Schottky barrier height greater than 0.45 eV severely affects the fill factor and the open circuit voltage of the solar cell with MoSe<sub>2</sub> interface layer.展开更多
To improve the photovoltaic conversion efficiency(PCE)of silicon heterojunction(SHJ)solar cells,this study focuses on optimizing the physical parameters of the sun-side-doped layer and proposes strategies to address t...To improve the photovoltaic conversion efficiency(PCE)of silicon heterojunction(SHJ)solar cells,this study focuses on optimizing the physical parameters of the sun-side-doped layer and proposes strategies to address the challenges posed by Fermi level pinning in wide bandgap designs.Using AFORS-HET simulations,we systematically investigate the effects of bandgap width,doping concentration,and defect state distribution on the energy band structure,interface electric field,and carrier transport dynamics.The results reveal that maintaining the Fermi level within 0.3 eV of the conduction band is essential for optimal device performance.A wider bandgap(>1.8 eV)enhances the utilization of short-wavelength light and significantly suppresses interface recombination,leading to an increase in short-circuit current density(J_(sc))by 0.8 mA/cm^(2).This benefit comes with a delicate balance between minimizing defect state density and improving doping efficiency.This study provides theoretical insights into the optimization of doped layer physical parameters and proposes practical solutions,including nano-crystallization and low-doping interface strategies,to improve the performance of SHJ solar cells and support industrial applications.展开更多
采用AFORS-HET软件对CsGeI_3空穴传输层(Hole Transport Material,HTM)平面异质结钙钛矿太阳电池进行了模拟,TiO_2作为电子传输层,CH_3NH_3PbI_3作为光吸收层,C作为背电极,分别讨论了钙钛矿光吸收层厚度、缺陷浓度,光吸收层/HTM界面态...采用AFORS-HET软件对CsGeI_3空穴传输层(Hole Transport Material,HTM)平面异质结钙钛矿太阳电池进行了模拟,TiO_2作为电子传输层,CH_3NH_3PbI_3作为光吸收层,C作为背电极,分别讨论了钙钛矿光吸收层厚度、缺陷浓度,光吸收层/HTM界面态密度和HTM对太阳电池性能参数的影响。模拟优化得到CsGeI_3HTM的PSCs最佳性能参数为:Voc=1.199 V,Jsc=22.2 m A·cm^(-2),FF=86.22%,PCE=22.95%,效率虽略低于spiro作为HTM的器件,但考虑生产工艺和制备成本,CsGeI_3作为HTM的PSCs将具有更好的应用前景。展开更多
近年来,HIT(heterojunction with intrinsic thin-layer)结构太阳能电池由于具有转化效率高和可低温生产等优点获得了广泛的关注,但是转化原材料成本高、生产技术条件苛刻和缺陷态控制等问题制约了其进一步的发展。本文采用AFORS-HET软...近年来,HIT(heterojunction with intrinsic thin-layer)结构太阳能电池由于具有转化效率高和可低温生产等优点获得了广泛的关注,但是转化原材料成本高、生产技术条件苛刻和缺陷态控制等问题制约了其进一步的发展。本文采用AFORS-HET软件模拟了ZnO(n)/ZnSe(i)/c-Si(p)异质结太阳电池结构吸收层掺杂浓度、缺陷密度和界面缺陷态密度等参数对该结构短路电流、开路电压、填充因子和光电转换效率的影响。优化后的结果显示,当吸收层掺杂浓度为1×10^21 cm^-3,ZnO层和c-Si层缺陷密度小于1017 cm^-3时,ZnSe/c-Si界面缺陷密度小于1025 cm^-3时,该结构太阳能电池光电转换效率可达24.29%。展开更多
文摘运用模拟软件AFORS-HET对TCO/a-Si∶H(n)/a-Si∶H(i)/c-Si(p)/Ag结构的异质结(HIT)太阳电池进行仿真,分析其光伏输出特性随发射层掺杂浓度、晶硅衬底掺杂浓度、透明导电氧化物薄膜(TCO)的选择以及TCO功函数的变化规律。结果显示,当发射层掺杂浓度大于1.0×1020cm^(-3),晶硅衬底掺杂浓度大于1.2×10^(16)cm^(-3),以ZnO为TCO层且Zn O的功函数低于4.4 e V时,电池的开路电压、短路电流密度、填充因子及电池转换效率达到最优值,光电转换效率最高达到19.18%。
文摘In this work, the AFORS-HET digital simulation software was used to calculate the electrical characteristics of the cell/n-ZnO/i-ZnO/n-Zn (O, S)/p-CIGSe<sub>2</sub>/p + -MoSe<sub>2</sub>/Mo/SLG. When the thickness of the CIGSe<sub>2</sub> absorber is between 3.5 and 1.5 μm, the efficiency of the cell with an interfacial layer of MoSe<sub>2</sub> remains almost constant, with an efficiency of about 24.6%, higher to that of a conventional cell which is 23.4% for a thickness of 1.5 μm of CIGSe<sub>2</sub>. To achieve the expected results, the MoSe<sub>2</sub> layer must be very thin less than or equal to 30 nm. In addition, a Schottky barrier height greater than 0.45 eV severely affects the fill factor and the open circuit voltage of the solar cell with MoSe<sub>2</sub> interface layer.
基金supported by the National Natural Science Foundation of China(Grant Nos.61991441 and 62004218)the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDB01000000)the Youth Innovation Promotion Association of the Chinese Academy of Sciences(Grant No.2021005).
文摘To improve the photovoltaic conversion efficiency(PCE)of silicon heterojunction(SHJ)solar cells,this study focuses on optimizing the physical parameters of the sun-side-doped layer and proposes strategies to address the challenges posed by Fermi level pinning in wide bandgap designs.Using AFORS-HET simulations,we systematically investigate the effects of bandgap width,doping concentration,and defect state distribution on the energy band structure,interface electric field,and carrier transport dynamics.The results reveal that maintaining the Fermi level within 0.3 eV of the conduction band is essential for optimal device performance.A wider bandgap(>1.8 eV)enhances the utilization of short-wavelength light and significantly suppresses interface recombination,leading to an increase in short-circuit current density(J_(sc))by 0.8 mA/cm^(2).This benefit comes with a delicate balance between minimizing defect state density and improving doping efficiency.This study provides theoretical insights into the optimization of doped layer physical parameters and proposes practical solutions,including nano-crystallization and low-doping interface strategies,to improve the performance of SHJ solar cells and support industrial applications.
文摘采用AFORS-HET软件对CsGeI_3空穴传输层(Hole Transport Material,HTM)平面异质结钙钛矿太阳电池进行了模拟,TiO_2作为电子传输层,CH_3NH_3PbI_3作为光吸收层,C作为背电极,分别讨论了钙钛矿光吸收层厚度、缺陷浓度,光吸收层/HTM界面态密度和HTM对太阳电池性能参数的影响。模拟优化得到CsGeI_3HTM的PSCs最佳性能参数为:Voc=1.199 V,Jsc=22.2 m A·cm^(-2),FF=86.22%,PCE=22.95%,效率虽略低于spiro作为HTM的器件,但考虑生产工艺和制备成本,CsGeI_3作为HTM的PSCs将具有更好的应用前景。
