Doping in thin-film transistors(TFTs) plays a crucial role in tailoring material properties to enhance device performance, making them essential for advanced electronic applications. This study explores the synthesis ...Doping in thin-film transistors(TFTs) plays a crucial role in tailoring material properties to enhance device performance, making them essential for advanced electronic applications. This study explores the synthesis and characterization of TFTs fabricated using nickel(Ni)-doped indium oxide(In_(2)O_(3)) via a wet-chemical approach. The presented work investigates the effect of "Ni" incorporation in In_(2)O_(3) on the structural and electrical transport properties of In_(2)O_(3), revealing that higher "Ni" content decreases the oxygen vacancies, leading to a reduction in leakage current and a forward shift in threshold potential(V_(th)).Experimental findings reveal that Ni In O-based TFTs(with Ni = 0.5%) showcase enhanced electrical performance, achieving mobility of 7.54 cm^(2)/(V·s), an impressive ON/OFF current ratio of ~10^(7), a V_(th) of 6.26 V, reduced interfacial trap states(D_(it)) of 8.23 ×10^(12) cm^(-2) and enhanced biased stress stability. The efficacy of "Ni" incorporation is attributed to the upgraded Lewis acidity, stable Ni-O bond strength, and small ionic radius of Ni. Negative bias illumination stability(NBIS) measurements further indicate that device stability diminishes with shorter light wavelengths, likely due to the activation of oxygen vacancies. These findings validate the solution-processed techniques' potential for future large-scale, low-cost, energy-efficient, and high-performance electronics.展开更多
Atomic layer deposition(ALD)is extensively used to fabricate doped dielectrics due to its ability to deposit conformal films with atomic-scale thickness control.Al-doped TiO_(2)(ATO)is a promising high-k dielectric fo...Atomic layer deposition(ALD)is extensively used to fabricate doped dielectrics due to its ability to deposit conformal films with atomic-scale thickness control.Al-doped TiO_(2)(ATO)is a promising high-k dielectric for dynamic random access memory(DRAM)applications,offering a high dielectric constant with a remarkable leakage-lowering effect by Al acceptor doping.However,ATO fabrication via conventional supercycle-based ALD suffers from severe crystallinity loss during the growth of TiO_(2) upon Al doping owing to the dopant-induced lattice disorder.In addition,Al doping cannot reduce any inherent O vacancies(V_(O))of TiO_(2),although the original purpose of doping was to address the n-type nature caused by V_(O).To resolve these limitations,we propose a single-step,in-situ Ar/O_(2) post-doping plasma(PDP)process immediately after the Al dopant incorporation.Using the PDP process,simultaneous atomic-scale dopant migration-mediated crystallization and V_(O) annihilation were successfully initiated.Thus,the surface concentration of the dopant decreased,reducing the dopant-induced lattice distortion,while promoting the highly crystallized seed layer-like surface.Consequently,strong rutile-phase recovery was accompanied by enhanced lattice-matched growth.In addition,the PDP process significantly lowers the V_(O)-to-lattice oxygen ratio by facilitating the recombination between reactive O species and V_(O),increasing the corresponding 0.4 e V of conduction band offset(CBO).Despite the common trade-off between the dielectric constant and leakage,the Pt/PDP-ATO/Ru capacitor exhibited a simultaneous 30%increase in dielectric constant and up to a 1.6-order reduction in leakage current density.展开更多
为探究稻茬小麦深施肥“一基一追”机艺融合技术的增产增效减排机制,2021—2024年在长江下游南通稻茬麦区开展大田试验。试验采用缓释掺混肥料(SRF,N∶P_(2)O_(5)∶K_(2)O=26∶12∶12)和普通尿素(U,46%N),结合自主研发的2BFGK-12(6)260...为探究稻茬小麦深施肥“一基一追”机艺融合技术的增产增效减排机制,2021—2024年在长江下游南通稻茬麦区开展大田试验。试验采用缓释掺混肥料(SRF,N∶P_(2)O_(5)∶K_(2)O=26∶12∶12)和普通尿素(U,46%N),结合自主研发的2BFGK-12(6)260全秸秆茬地洁区旋耕智能施肥播种机和3ZF-4(200)中耕追肥机,设置7种施肥模式(30 cm+15 cm宽窄行种植):以尿素4次分施(N 240 kg hm^(-2),基肥∶分蘖肥∶拔节肥∶孕穗肥=5∶1∶2∶2,窄行基施,追肥全田撒施)为对照(CK);减氮15%(N 204 kg hm^(-2))条件下设置6种处理:M_(1)(100%SRF窄行基施);M_(2)(60%SRF窄行基施+40%U拔节期窄行撒施);M_(3)(60%SRF窄行基施+40%U返青期宽行条施);M_(4)(60%SRF窄行基施+40%SRF返青期窄行撒施);M_(5)(60%SRF窄行基施+40%SRF返青期宽行条施);M_(4+5)(60%SRF窄行基施+20%SRF返青期宽行条施+20%SRF返青期窄行撒施)。研究比较不同施肥模式对小麦产量效益、根系形态生理、氮素利用效率及N_(2)O排放的影响。结果表明,与CK相比,M_(2)~M_(5)处理提高了小麦产量(4.0%~19.0%)和经济效益(13.7%~35.7%),其中M_(4)和M_(5)处理表现最优,分别增产14.1%和19.0%,经济效益提升34.5%和35.7%。这些处理明显改善了根系特性(根干重密度增加9.7%~111.8%,根系活力和氧化力分别提高6.8%~52.0%和4.2%~44.2%),降低N_(2)O累积排放量22.6%~34.5%,提高0~20 cm土层硝态氮含量11.2%~40.0%。在氮素利用方面,M_(2)~M_(5)处理均提高了籽粒氮素积累量、花后氮素积累量及其对籽粒氮素的贡献率,氮肥利用效率指标(包括偏生产力、农学效率和表观利用率)分别显著提升了22.4%~40.0%、29.7%~74.3%和9.41~18.77个百分点。值得注意的是,M_(4)和M_(5)处理表现出最优的综合效益:N_(2)O累积排放量降幅最大(分别达27.0%和34.5%),氮肥表观利用率2季均维持在43.0%以上(均值分别为43.5%和46.8%),同时在生育后期保持较高的根系活性和耕层无机氮含量。相比之下,M_(1)处理虽然实现了最大的N_(2)O减排效果(降幅35.9%),但导致减产10.4%和经济效益下降10.8%,且氮肥利用效率呈现不稳定的年际变化特征。而优化处理M_(4+5)进一步改善了根系形态生理特性,并提高氮肥表观利用率和籽粒氮素积累量。综上,减氮15%条件下(N 204 kg hm^(-2)),缓混肥2次施用处理(M_(4)和M_(5))能实现产量、经济效益、氮肥利用效率和N_(2)O减排的协同提高,并以追肥深施处理(M_(5))效应更强。本研究为稻茬小麦缓释肥减氮优化高效应用提供重要理论依据。展开更多
基金funded by the research startup funding of National Research Foundation (NRF) of Korea through the Ministry of Science and ICT 2022R1G1A1009887Part of this study was supported by research start-up funding of Anhui University (S202418001/078)。
文摘Doping in thin-film transistors(TFTs) plays a crucial role in tailoring material properties to enhance device performance, making them essential for advanced electronic applications. This study explores the synthesis and characterization of TFTs fabricated using nickel(Ni)-doped indium oxide(In_(2)O_(3)) via a wet-chemical approach. The presented work investigates the effect of "Ni" incorporation in In_(2)O_(3) on the structural and electrical transport properties of In_(2)O_(3), revealing that higher "Ni" content decreases the oxygen vacancies, leading to a reduction in leakage current and a forward shift in threshold potential(V_(th)).Experimental findings reveal that Ni In O-based TFTs(with Ni = 0.5%) showcase enhanced electrical performance, achieving mobility of 7.54 cm^(2)/(V·s), an impressive ON/OFF current ratio of ~10^(7), a V_(th) of 6.26 V, reduced interfacial trap states(D_(it)) of 8.23 ×10^(12) cm^(-2) and enhanced biased stress stability. The efficacy of "Ni" incorporation is attributed to the upgraded Lewis acidity, stable Ni-O bond strength, and small ionic radius of Ni. Negative bias illumination stability(NBIS) measurements further indicate that device stability diminishes with shorter light wavelengths, likely due to the activation of oxygen vacancies. These findings validate the solution-processed techniques' potential for future large-scale, low-cost, energy-efficient, and high-performance electronics.
基金supported by the Samsung Electronics Co.,Ltd.(ISO230414-05954-01)Basic Science Research Program through the National Research Foundation of Korea(NRF)funded by the Ministry of Education(NRF2021R1A6A1A03039981)+2 种基金the Korea Institute for Advancement of Technology(KIAT)Grant,funded by the Korea Government(MOTIE)(P0023703,HRD Program for Industrial Innovation)The computations were performed at the Korea Institute of Science and Technology Information(KISTI)National Supercomputing Center(KSC-2024-CRE-0316)the UNIST Supercomputing Center。
文摘Atomic layer deposition(ALD)is extensively used to fabricate doped dielectrics due to its ability to deposit conformal films with atomic-scale thickness control.Al-doped TiO_(2)(ATO)is a promising high-k dielectric for dynamic random access memory(DRAM)applications,offering a high dielectric constant with a remarkable leakage-lowering effect by Al acceptor doping.However,ATO fabrication via conventional supercycle-based ALD suffers from severe crystallinity loss during the growth of TiO_(2) upon Al doping owing to the dopant-induced lattice disorder.In addition,Al doping cannot reduce any inherent O vacancies(V_(O))of TiO_(2),although the original purpose of doping was to address the n-type nature caused by V_(O).To resolve these limitations,we propose a single-step,in-situ Ar/O_(2) post-doping plasma(PDP)process immediately after the Al dopant incorporation.Using the PDP process,simultaneous atomic-scale dopant migration-mediated crystallization and V_(O) annihilation were successfully initiated.Thus,the surface concentration of the dopant decreased,reducing the dopant-induced lattice distortion,while promoting the highly crystallized seed layer-like surface.Consequently,strong rutile-phase recovery was accompanied by enhanced lattice-matched growth.In addition,the PDP process significantly lowers the V_(O)-to-lattice oxygen ratio by facilitating the recombination between reactive O species and V_(O),increasing the corresponding 0.4 e V of conduction band offset(CBO).Despite the common trade-off between the dielectric constant and leakage,the Pt/PDP-ATO/Ru capacitor exhibited a simultaneous 30%increase in dielectric constant and up to a 1.6-order reduction in leakage current density.
基金江西省自然科学基金项目(编号:20202BAB206075)江西省教育厅科技项目(编号:GJJ201202)江西中医药大学中西医结合一级学科平台(Discipline of Chinese and Western Integrative Medicine,Jiangxi University of Chinese Medicine)。
文摘为探究稻茬小麦深施肥“一基一追”机艺融合技术的增产增效减排机制,2021—2024年在长江下游南通稻茬麦区开展大田试验。试验采用缓释掺混肥料(SRF,N∶P_(2)O_(5)∶K_(2)O=26∶12∶12)和普通尿素(U,46%N),结合自主研发的2BFGK-12(6)260全秸秆茬地洁区旋耕智能施肥播种机和3ZF-4(200)中耕追肥机,设置7种施肥模式(30 cm+15 cm宽窄行种植):以尿素4次分施(N 240 kg hm^(-2),基肥∶分蘖肥∶拔节肥∶孕穗肥=5∶1∶2∶2,窄行基施,追肥全田撒施)为对照(CK);减氮15%(N 204 kg hm^(-2))条件下设置6种处理:M_(1)(100%SRF窄行基施);M_(2)(60%SRF窄行基施+40%U拔节期窄行撒施);M_(3)(60%SRF窄行基施+40%U返青期宽行条施);M_(4)(60%SRF窄行基施+40%SRF返青期窄行撒施);M_(5)(60%SRF窄行基施+40%SRF返青期宽行条施);M_(4+5)(60%SRF窄行基施+20%SRF返青期宽行条施+20%SRF返青期窄行撒施)。研究比较不同施肥模式对小麦产量效益、根系形态生理、氮素利用效率及N_(2)O排放的影响。结果表明,与CK相比,M_(2)~M_(5)处理提高了小麦产量(4.0%~19.0%)和经济效益(13.7%~35.7%),其中M_(4)和M_(5)处理表现最优,分别增产14.1%和19.0%,经济效益提升34.5%和35.7%。这些处理明显改善了根系特性(根干重密度增加9.7%~111.8%,根系活力和氧化力分别提高6.8%~52.0%和4.2%~44.2%),降低N_(2)O累积排放量22.6%~34.5%,提高0~20 cm土层硝态氮含量11.2%~40.0%。在氮素利用方面,M_(2)~M_(5)处理均提高了籽粒氮素积累量、花后氮素积累量及其对籽粒氮素的贡献率,氮肥利用效率指标(包括偏生产力、农学效率和表观利用率)分别显著提升了22.4%~40.0%、29.7%~74.3%和9.41~18.77个百分点。值得注意的是,M_(4)和M_(5)处理表现出最优的综合效益:N_(2)O累积排放量降幅最大(分别达27.0%和34.5%),氮肥表观利用率2季均维持在43.0%以上(均值分别为43.5%和46.8%),同时在生育后期保持较高的根系活性和耕层无机氮含量。相比之下,M_(1)处理虽然实现了最大的N_(2)O减排效果(降幅35.9%),但导致减产10.4%和经济效益下降10.8%,且氮肥利用效率呈现不稳定的年际变化特征。而优化处理M_(4+5)进一步改善了根系形态生理特性,并提高氮肥表观利用率和籽粒氮素积累量。综上,减氮15%条件下(N 204 kg hm^(-2)),缓混肥2次施用处理(M_(4)和M_(5))能实现产量、经济效益、氮肥利用效率和N_(2)O减排的协同提高,并以追肥深施处理(M_(5))效应更强。本研究为稻茬小麦缓释肥减氮优化高效应用提供重要理论依据。
