Memristors have a synapse-like two-terminal structure and electrical properties,which are widely used in the construc-tion of artificial synapses.However,compared to inorganic materials,organic materials are rarely us...Memristors have a synapse-like two-terminal structure and electrical properties,which are widely used in the construc-tion of artificial synapses.However,compared to inorganic materials,organic materials are rarely used for artificial spiking synapses due to their relatively poor memrisitve performance.Here,for the first time,we present an organic memristor based on an electropolymerized dopamine-based memristive layer.This polydopamine-based memristor demonstrates the improve-ments in key performance,including a low threshold voltage of 0.3 V,a thin thickness of 16 nm,and a high parasitic capaci-tance of about 1μF·mm^(-2).By leveraging these properties in combination with its stable threshold switching behavior,we con-struct a capacitor-free and low-power artificial spiking neuron capable of outputting the oscillation voltage,whose spiking fre-quency increases with the increase of current stimulation analogous to a biological neuron.The experimental results indicate that our artificial spiking neuron holds potential for applications in neuromorphic computing and systems.展开更多
基金support from the Beijing Natural Science Foundation-Xiaomi Innovation Joint Fund(No.L233009)National Natural Science Foundation of China(NSFC Nos.62422409,62174152,and 62374159)from the Youth Innovation Promotion Association of Chinese Academy of Sciences(No.2020115).
文摘Memristors have a synapse-like two-terminal structure and electrical properties,which are widely used in the construc-tion of artificial synapses.However,compared to inorganic materials,organic materials are rarely used for artificial spiking synapses due to their relatively poor memrisitve performance.Here,for the first time,we present an organic memristor based on an electropolymerized dopamine-based memristive layer.This polydopamine-based memristor demonstrates the improve-ments in key performance,including a low threshold voltage of 0.3 V,a thin thickness of 16 nm,and a high parasitic capaci-tance of about 1μF·mm^(-2).By leveraging these properties in combination with its stable threshold switching behavior,we con-struct a capacitor-free and low-power artificial spiking neuron capable of outputting the oscillation voltage,whose spiking fre-quency increases with the increase of current stimulation analogous to a biological neuron.The experimental results indicate that our artificial spiking neuron holds potential for applications in neuromorphic computing and systems.
