To improve the mechanical properties of 2024 aluminum alloy,a kind of diamond-like carbon(DLC)film was deposited on the surface of 2024 aluminum alloy by plasma-enhanced chemical vapor deposition technique.The effects...To improve the mechanical properties of 2024 aluminum alloy,a kind of diamond-like carbon(DLC)film was deposited on the surface of 2024 aluminum alloy by plasma-enhanced chemical vapor deposition technique.The effects of acetylene gas on the microstructure,hardness,wear resistance,and adhesion of DLC film were investigated by field emission scanning electron microscope,nano-indentation tester,and friction-wear tester.The results indicate that the thickness of the DLC film increases gradually with increasing the proportion of acetylene.There is an obvious transition layer between the DLC film and matrix.When the ratio of argon to acetylene is 1:3,the hardness of DLC film is enhanced significantly because of the content changes of sp^(3) and sp^(2) bonds within the film.At the same time,the friction coefficient of DLC film is reduced.展开更多
In order to address challenges posed by the reduction in transistor size,researchers are concentrating on two-dimensional(2D)materials with high dielectric constants and large band gaps.Monoclinic ZrO_(2)(m-ZrO_(2))ha...In order to address challenges posed by the reduction in transistor size,researchers are concentrating on two-dimensional(2D)materials with high dielectric constants and large band gaps.Monoclinic ZrO_(2)(m-ZrO_(2))has emerged as a promising gate dielectric material due to its suitable dielectric constant,wide band gap,ideal valence-band offset,and good thermodynamic stability.However,current deposition methods face compatibility issues with 2D semiconductors,highlighting the need for high-quality dielectrics and interfaces.Here,high-quality 2D m-ZrO_(2)single crystals are successfully prepared using a onestep chemical vapor deposition(CVD)method,aided by 5A molecular sieves for oxygen supply.The prepared ZrO_(2)is utilized as a gate dielectric in the construction of MoS2 field-effect transistors(FETs)to investigate its electrical property.The FETs exhibit a high carrier mobility of up to 5.50 cm^(2)·V^(−1)·s^(−1),and a current switching ratio(Ion/off)of approximately 10^(4),which aligns with the current standards of logic circuits,indicating that ZrO_(2)has application value as a gate dielectric.The successful onestep preparation of single-crystal ZrO_(2)paves the way for the utilization of high-κgate dielectrics and creates favorable conditions for the development of high-performance semiconductor devices,offering new possibilities for transistor miniaturization.展开更多
Graphene-metal based materials have been utilized in lithium-sulfur(Li–S)batteries owing to their integrated functionalities thus far.However,their synthesis has predominantly relied on wet-chemistry routes,which lim...Graphene-metal based materials have been utilized in lithium-sulfur(Li–S)batteries owing to their integrated functionalities thus far.However,their synthesis has predominantly relied on wet-chemistry routes,which limited their practical activity in Li–S reaction systems.In this study,we introduce a chemical vapor deposition(CVD)-triggered dry-chemistry approach for the preparation of graphene-cobalt(Co)based catalysts.The versatile CVD technique provides a dry and controllable reaction environment,effectively pledging the compact and clean catalytic interfaces between graphene and Co-based components.Additionally,programmed reactions introduce defects such as vacancies and nitrogen heteroatoms into the catalysts.Notably,the graphene layer number and Co valence state can be delicately manipulated by altering the CVD reaction temperature.Specifically,few-layer graphene wrapped Co/Co_(3)O_(4)(FGr-Co/Co_(3)O_(4))prepared at 450 ℃ shows higher catalytic activity than the multi-layer graphene wrapped Co/CoO(MGr-Co/CoO)synthesized at 550 ℃,attributed to its comprehensive control of clean interface,valence distribution range and defects.Leveraging these advantages,the battery with FGr-Co/Co_(3)O_(4)shows favorable working stability with a degradation rate of only 0.08%over 500 cycles at 1.0 C.Furthermore,under an elevated sulfur loading of 6.1 mg cm^(–2),the battery harvests a remarkable areal capacity of 5.9 mA h cm^(–2)along with stable cyclic operation.展开更多
The insulating nature and dissolution of vanadium-based oxides in aqueous electrolytes result in low capacity and lifespan during charge/discharge process, which is unable to meet the demands for the development and a...The insulating nature and dissolution of vanadium-based oxides in aqueous electrolytes result in low capacity and lifespan during charge/discharge process, which is unable to meet the demands for the development and application of high-energy-density aqueous zinc-ion batteries(AZIBs). Herein, a novel V_(2)O_(5-x)@C composite cathode consisting of conductive carbon coatings with abundant oxygen vacancies is specifically designed through plasma-enhanced chemical vapor deposition(PECVD) method. As expected,the ideal microstructure of V_(2)O_(5-x)@C cathode enables large specific surface areas, fast electron/ion diffusion kinetics, and superior interfacial stability, which can realize outstanding cycling stability and electrochemical performance. Consequently, the V_(2)O_(5-x)@C composite cathode delivers a high reversible rate capacity of 130.6 mAh/g at 10 A/g and remains 277.6 mAh/g when returned to 1 A/g. In addition, the Zn//V_(2)O_(5-x)@C full cell can stably cycle for 1000 cycles with a high initial specific capacity of 149.2 m Ah/g,possessing 83.8% capacity retention at 5 A/g. The process of constructing a conductive layer on the surface of cathode materials while increasing oxygen vacancies in the structure through PECVD provides new insight into the design of high-performance cathode materials for AZIBs.展开更多
The authors report the development of aλ~4.1μm quantum cascade laser grown by metal-organic chemical vapor deposition using strain-balanced In Ga As/In Al As materials.A device with a 7.5 mm cavity length and 6.5μm...The authors report the development of aλ~4.1μm quantum cascade laser grown by metal-organic chemical vapor deposition using strain-balanced In Ga As/In Al As materials.A device with a 7.5 mm cavity length and 6.5μm ridge width,bonded to an aluminum nitride heatsink,achieves maximum output powers of 3.4 W at 288 K in pulsed mode and 1.6 W at288 K in continuous-wave(CW)operation,with corresponding maximum wall-plug efficiencies of 14.8%and 9.3%.A kink is observed in the power–current curve under CW operation,which is absent in pulsed operation.Near-field results show that in CW operation,the horizontal beam quality factor M2fluctuates with current,indicating mode instability and highorder lateral mode excitation,while in pulsed mode,the horizontal M2remains stable around 1.3 as the current increases from 1.4 A to 1.9 A.展开更多
The heteroepitaxy of diamond films has received widespread attention;however,its application remains limited owing to the mismatch in properties and structure between diamond and heterogeneous substrates.In this study...The heteroepitaxy of diamond films has received widespread attention;however,its application remains limited owing to the mismatch in properties and structure between diamond and heterogeneous substrates.In this study,diamond films were successfully synthesized on high-entropy alloys(HEAs)substrates using microwave plasma chemical vapor deposition.The resulting diamond films were continuous,uniform,and adhered to the HEAs substrates.The mixed carbides were identified using X-ray diffraction,and the quality of the diamond films was examined using Raman spectroscopy.Moreover,the corrosion test revealed that the diamond/TiZrHfMo samples had excellent electrochemical stability and corrosion resistance with a corrosion potential value of-0.169 V in a 3.5wt%NaCl solution.A multiple regression model was established to evaluate the effects of the structure and growth parameters,which confirmed that the mixing entropy significantly affected the grain size and corrosion properties.展开更多
Ruthenium(Ru)-based chalcogenide(S,Se)is a promising material in various fields,such as optics,photoelectrodes,and electrocatalysis,owing to its suitable bandgap for generating charge carriers under light illumination...Ruthenium(Ru)-based chalcogenide(S,Se)is a promising material in various fields,such as optics,photoelectrodes,and electrocatalysis,owing to its suitable bandgap for generating charge carriers under light illumination ranging from visible to near-infrared(NIR)and its high absorption coefficient.In this study,we report the synthesis of Ru Se_(2)thin films by chemical vapor deposition(CVD)with a bandgap matching the NIR region at 0.52 e V.Further,we demonstrated Ru S_(2x)Se_(2-2x)alloy films using the post-sulfurization process after CVD Ru Se_(2)with a tunable bandgap from 0.52 to 1.39 e V depending on sulfur composition.Remarkably,Ru S_(2x)Se_(2-2x)alloy film metal–semiconductor–metal(MSM)photodetector sulfurized at 500°C,with a 0.75 e V bandgap,exhibits enhanced broad absorption across NIR spectral ranges,suppressed dark current and high photoresponsivity in NIR wavelengths range even at zero-bias.We believe the bandgaptunable Ru S_(2x)Se_(2-2x)thin film through an efficient deposition method could be suitable for various optoelectronic applications.展开更多
Viscose activated carbon fibers （ACFs） were characterized using specific surface area, scanning electron modified with chemical vapor deposition （CVD）. The samples were microscopy （SEM）, pore size distribution a...Viscose activated carbon fibers （ACFs） were characterized using specific surface area, scanning electron modified with chemical vapor deposition （CVD）. The samples were microscopy （SEM）, pore size distribution and Fourier transform infrared spectroscopy （FTIR）. Batch adsorption experiments were carried out to investigate the adsorption behavior of modified ACFs for methyl orange（MO） from its aqueous solutions. The results show that the adsorption isotherms of MO onto modified ACFs well follows the Langmuir isotherm equation. The adsorption kinetics of MO can be well described by the pseudo second-order kinetic model. The adsorption process involves the intra-particle diffusion, but is not the only rate-controlling step. Thermodynamic parameters including AG, AH and AS were calculated, suggesting that the adsorption of MO onto modified ACFs is a spontaneous, exothermic and physisorption process. FTIR result indicates that the major adsorption mechanism of modified ACFs for MO is hydrogen bond.展开更多
Two-dimensional transition metal dichalcogenides heterostructures have stimulated wide in- terest not only for the fundamental research, but also for the application of next generation electronic and optoelectronic de...Two-dimensional transition metal dichalcogenides heterostructures have stimulated wide in- terest not only for the fundamental research, but also for the application of next generation electronic and optoelectronic devices. Herein, we report a successful two-step chemical vapor deposition strategy to construct vertically stacked van der Waals epitaxial In2Se3/MoSe2 heterostructures. Transmission electron microscopy characterization reveals clearly that the In2Se3 has well-aligned lattice orientation with the substrate of monolayer MoSe2. Due to the interaction between the In2Se3 and MoSe2 layers, the heterostructure shows the quench- ing and red-shift of photoluminescence. Moreover, the current rectification behavior and photovoltaic effect can be observed from the heterostructure, which is attributed to the unique band structure alignment of the heterostructure, and is further confirmed by Kevin probe force microscopy measurement. The synthesis approach via van der Waals epitaxy in this work can expand the way to fabricate a variety of two-dimensional heterostructures for potential applications in electronic and optoelectronic devices.展开更多
ZnO thin films were grown on GaAs （001） substrates by metal-organic chemical vapor deposition （MOCVD） at low temperatures ranging from 100 to 400℃. DEZn and 1-12 O were used as the zinc precursor and oxygen precu...ZnO thin films were grown on GaAs （001） substrates by metal-organic chemical vapor deposition （MOCVD） at low temperatures ranging from 100 to 400℃. DEZn and 1-12 O were used as the zinc precursor and oxygen precursor, respectively. The effects of the growth temperatures on the growth characteristics and optical properties of ZnO films were investigated. The X-ray diffraction measurement （XRD） results indicated that all the thin films were grown with highly c- axis orientation. The surface morphologies and crystal properties of the films were critically dependent on the growth temperatures. Although there was no evidence of epitaxial growth, the scanning electron microscopy （SEM） image of ZnO film grown at 400℃ revealed the presence of ZnO microcrystallines with closed packed hexagon structure. The photoluminescence spectrum at room temperature showed only bright band-edge （3. 33eV） emissions with little or no deep-level e- mission related to defects.展开更多
Various methods for production of polysilicon have been proposed for lowering the production cost andenergy consumption, and enhancing productivity, which are critical for industrial applications. The fluidized bed ch...Various methods for production of polysilicon have been proposed for lowering the production cost andenergy consumption, and enhancing productivity, which are critical for industrial applications. The fluidized bed chemical vapor deposition （FBCVD） method is a most promising alternative to conventional ones, but the homogeneous reaction of silane in FBCVD results in unwanted formation of fines, which will affect the product qualityand output. There are some other problems, such as heating degeneration due to undesired polysilicon deposition on the walls of the reactor and the heater. This article mainly reviews the technological development on FBCVD of polycrystalline silicon and the research status for solving the above problems. It also identifies a number of challenges to tackle and principles should be followed in the design ofa FBCVD reactor.展开更多
This paper introduces a feasible process to achieve the molybdenum disulfide atomic layers using chemical vapor deposition(CVD) method,with molybdenum thin film and solid sulfur as precursors.And some improvements wer...This paper introduces a feasible process to achieve the molybdenum disulfide atomic layers using chemical vapor deposition(CVD) method,with molybdenum thin film and solid sulfur as precursors.And some improvements were made to reduce the amount of metastable MoS_(2)-3 R.The morphology of the acquired MoS_(2) layers,existing as triangular flakes or large-area continuous films,can be controlled by adjusting the synthesis time and reacting temperature.The characterization results show that the monolayer MoS_(2) flakes reveal a(002)-oriented growth on SiO_(2)/Si substrates,and its crystalline domain size is approximately 30 μm,and the thickness is 0.65 nm.Since the synthesis of MoS_(2)-3 R is restrained,the electronic transport properties of MoS_(2) with different layers were investigated,revealing that those properties equal with those of MoS_(2) samples prepared by exfoliation methods.展开更多
High quality TiC whiskers have been prepared by a modified chemical vapor deposition (CVD) method using TiCl4 and CH4 as reactant gases and Ni as substrate. The deposition temperature and gas flow mies have ampreciabl...High quality TiC whiskers have been prepared by a modified chemical vapor deposition (CVD) method using TiCl4 and CH4 as reactant gases and Ni as substrate. The deposition temperature and gas flow mies have ampreciable effect on the whisker growth.The whisker orientations and morphology are determined by X-my diffraction (XRD),scanning electron micmpmph (SEM) and transmission electron microgmph (TEM).In addition to the spherical tips, spiral growth microsteps and obvious terraces are observed at the tips and side faces of whiskers in the present eoperiment. The whiskers grow mostly along (100) direction. The whisker growth mechanism is discussed in detail.展开更多
The development of functional relationships between the observed deposition rate and the experimental conditions is an important step toward understanding and optimizing low-pressure chemical vapor deposition(LPCVD)or...The development of functional relationships between the observed deposition rate and the experimental conditions is an important step toward understanding and optimizing low-pressure chemical vapor deposition(LPCVD)or low-pressure chemical vapor infiltration(LPCVI).In the field of ceramic matrix composites(CMCs),methyltrichlorosilane(CH3 SiCl3,MTS)is the most widely used source gas system for SiC,because stoichiometric SiC deposit can be facilitated at 900°C–1300°C.However,the reliability and accuracy of existing numerical models for these processing conditions are rarely reported.In this study,a comprehensive transport model was coupled with gas-phase and surface kinetics.The resulting gas-phase kinetics was confirmed via the measured concentration of gaseous species.The relationship between deposition rate and 24 gaseous species has been effectively evaluated by combining the special superiority of the novel extreme machine learning method and the conventional sticking coefficient method.Surface kinetics were then proposed and shown to reproduce the experimental results.The proposed simulation strategy can be used for different material systems.展开更多
In this study, supported nonmetal (boron) doping TiO2 coating photocatalysts were prepared by chemical vapor deposition (CVD) to enhance the activity under visible light irradiation and avoid the recovering of TiO2. B...In this study, supported nonmetal (boron) doping TiO2 coating photocatalysts were prepared by chemical vapor deposition (CVD) to enhance the activity under visible light irradiation and avoid the recovering of TiO2. Boron atoms were successfully doped into the lattice of TiO2 through CVD, as evidenced from XPS analysis. B-doped TiO2 coating catalysts showed drastic and strong absorption in the visible light range with a red shift in the band gap transition. This novel B-TiO2 coating photocatalyst showed higher photocatalytic activity in methyl orange degradation under visible light irradiation than that of the pure TiO2 photocatalyst.展开更多
The performance of pearlescent pigment significantly affected by the grain size and the roughness of deposited film. The effect of TiCl_(4) concentration on the initial deposition of TiO_(2) on mica by atmospheric pre...The performance of pearlescent pigment significantly affected by the grain size and the roughness of deposited film. The effect of TiCl_(4) concentration on the initial deposition of TiO_(2) on mica by atmospheric pressure chemical vapor deposition(APCVD) was investigated. The precursor concentration significantly affected the deposition and morphology of TiO_(2) grains assembling the film. The deposition time for fully covering the surface of mica decreased from 120 to 10 s as the TiCl_(4) concentration increased from 0.38%to 2.44%. The grain size increased with the TiCl_(4) concentration. The AFM and TEM analysis demonstrated that the aggregation of TiO_(2) clusters at the initial stage finally result to the agglomeration of fine TiO_(2) grains at high TiCl_(4) concentrations. Following the results, it was suggested that the nucleation density and size was easy to be adjusted when the TiCl_(4) concentration is below 0.90%.展开更多
The micro-crystalline diamond (MCD) and fine-grained diamond (FGD) films are deposited on commercial silicon nitride inserts by the hot-filament chemical vapor deposition (HFCVD) method. The friction andcutting proper...The micro-crystalline diamond (MCD) and fine-grained diamond (FGD) films are deposited on commercial silicon nitride inserts by the hot-filament chemical vapor deposition (HFCVD) method. The friction andcutting properties of as-deposited MCD and FGD films coated silicon nitride (Si3N4) inserts are comparatively investigated in this study. The scanning electron microscopy (SEM) and Raman spectroscopy are adopted to studythe characterization of the deposited diamond films. The friction tests are conducted on a ball-on-plate typereciprocating friction tester in ambient air using Co-cemented tungsten carbide (WC-Co), Si3N4 and ball-bearing steel (BBS) balls as the mating materials of the diamond films. For sliding against WC-Co, Si3N4 and BBS,the FGD film presents lower friction coeffcients than the MCD film. However, after sliding against Si3N4, the FGD film is subject to more severe wear than the MCD film. The cutting performance of as-deposited MCD and FGD coated Si3N4 inserts is examined in dry turning glass fiber reinforced plastics (GFRP) composite materials,comparing with the uncoated Si3N4 insert. The results indicate that the lifetime of Si3N4 inserts can be prolonged by depositing the MCD or FGD film on them and the FGD coated insert shows longer cutting lifetime than the MCD coated one.展开更多
Fe-Si ribbons and thin sheets with 6.5%Si content were prepared by means of the single roller rapid solidification and chemical vapor deposition (CVD), respectively. The initial textures of rapidly solidified Fe-6.5%S...Fe-Si ribbons and thin sheets with 6.5%Si content were prepared by means of the single roller rapid solidification and chemical vapor deposition (CVD), respectively. The initial textures of rapidly solidified Fe-6.5%Si ribbons were characteristic of the {100} fiber-type, which became weakened during primary recrystallization in various atmospheres. At the stage of secondary recrystallization, the {100} texture formed in Ar and the {110} texture in hydrogen, while there occurred a texture transformation from the {100} type to the {110} type in vacuum with the increase of annealing temperature. For Fe-6.5%Si sheets prepared by Si deposition in cold-rolled Fe-3%Si matrix sheets, their textures were dominated by the η-fiber (<001>//RD) with the maximum density at the {120}<001> orientations. After homogenization annealing, the η-fiber could evolve into the {130}<001> type or become more concentrated on the {120}<001> orientations, depending on the cold rolling modes of Fe-3%Si matrix sheets.展开更多
This study focused on the investigation of the edge effect of diamond films deposited by microwave plasma chemical vapor de-position.Substrate bulge height△h is a factor that affects the edge effect,and it was used t...This study focused on the investigation of the edge effect of diamond films deposited by microwave plasma chemical vapor de-position.Substrate bulge height△h is a factor that affects the edge effect,and it was used to simulate plasma and guide the diamond-film deposition experiments.Finite-element software COMSOL Multiphysics was used to construct a multiphysics(electromagnetic,plasma,and fluid heat transfer fields)coupling model based on electron collision reaction.Raman spectroscopy and scanning electron microscopy were performed to characterize the experimental growth and validate the model.The simulation results reflected the experimental trends observed.Plasma discharge at the edge of the substrate accelerated due to the increase in△h(△h=0-3 mm),and the values of electron density(n_(c)),molar concentration of H(C_(H)),and molar concentration of CH_(3)(C_(CH_(3)))doubled at the edge(for the special concave sample with△h=−1 mm,the active chemical groups exhibited a decreased molar concentration at the edge of the substrate).At=0-3 mm,a high diamond growth rate and a large diamond grain size were observed at the edge of the substrate,and their values increased with.The uniformity of film thickness decreased with.The Raman spectra of all samples revealed the first-order characteristic peak of dia-mond near 1332 cm^(−1).When△h=−1 mm,tensile stress occurred in all regions of the film.When△h=1-3 mm,all areas in the film ex-hibited compressive stress.展开更多
We demonstrate high-performance broadband tunable external-cavity lasers(ECLs) with the metal-organic chemical vapor deposition(MOCVD) grown In As/In P quantum dots(QDs) structures. Without cavity facet coatings, the ...We demonstrate high-performance broadband tunable external-cavity lasers(ECLs) with the metal-organic chemical vapor deposition(MOCVD) grown In As/In P quantum dots(QDs) structures. Without cavity facet coatings, the 3-d B spectral bandwidth of the Fabry–Perot(FP) laser is approximately 10.8 nm, while the tuning bandwidth of ECLs is 45 nm.Combined with the anti-reflection(AR)/high-reflection(HR) facet coating, a 92 nm bandwidth tuning range has been obtained with the wavelength covering from 1414 nm to 1506 nm. In most of the tuning range, the threshold current density is lower than 1.5 k A/cm2. The maximum output power of 6.5 m W was achieved under a 500 m A injection current.All achievements mentioned above were obtained under continuous-wave(CW) mode at room temperature(RT).展开更多
基金National Natural Science Foundation of China(52274296,52071091,52001081)College Student Innovation and Entrepreneurship Training Program Project from Guangdong Province in 2023(S20230125)。
文摘To improve the mechanical properties of 2024 aluminum alloy,a kind of diamond-like carbon(DLC)film was deposited on the surface of 2024 aluminum alloy by plasma-enhanced chemical vapor deposition technique.The effects of acetylene gas on the microstructure,hardness,wear resistance,and adhesion of DLC film were investigated by field emission scanning electron microscope,nano-indentation tester,and friction-wear tester.The results indicate that the thickness of the DLC film increases gradually with increasing the proportion of acetylene.There is an obvious transition layer between the DLC film and matrix.When the ratio of argon to acetylene is 1:3,the hardness of DLC film is enhanced significantly because of the content changes of sp^(3) and sp^(2) bonds within the film.At the same time,the friction coefficient of DLC film is reduced.
基金support from the National Natural Science Foundation of China(No.21975067)Shenzhen Science and Technology Program(No.JCYJ20220530160407016).
文摘In order to address challenges posed by the reduction in transistor size,researchers are concentrating on two-dimensional(2D)materials with high dielectric constants and large band gaps.Monoclinic ZrO_(2)(m-ZrO_(2))has emerged as a promising gate dielectric material due to its suitable dielectric constant,wide band gap,ideal valence-band offset,and good thermodynamic stability.However,current deposition methods face compatibility issues with 2D semiconductors,highlighting the need for high-quality dielectrics and interfaces.Here,high-quality 2D m-ZrO_(2)single crystals are successfully prepared using a onestep chemical vapor deposition(CVD)method,aided by 5A molecular sieves for oxygen supply.The prepared ZrO_(2)is utilized as a gate dielectric in the construction of MoS2 field-effect transistors(FETs)to investigate its electrical property.The FETs exhibit a high carrier mobility of up to 5.50 cm^(2)·V^(−1)·s^(−1),and a current switching ratio(Ion/off)of approximately 10^(4),which aligns with the current standards of logic circuits,indicating that ZrO_(2)has application value as a gate dielectric.The successful onestep preparation of single-crystal ZrO_(2)paves the way for the utilization of high-κgate dielectrics and creates favorable conditions for the development of high-performance semiconductor devices,offering new possibilities for transistor miniaturization.
基金support of the National Natural Science Foundation of China(Grant No.52172239,52202038,and 52402247)the Innovative Funds Plan of Henan University of Technology(Grant No.2020ZKCJ07)the Natural Science Foundation of Shandong Province(Grant No.ZR2022QE081)。
文摘Graphene-metal based materials have been utilized in lithium-sulfur(Li–S)batteries owing to their integrated functionalities thus far.However,their synthesis has predominantly relied on wet-chemistry routes,which limited their practical activity in Li–S reaction systems.In this study,we introduce a chemical vapor deposition(CVD)-triggered dry-chemistry approach for the preparation of graphene-cobalt(Co)based catalysts.The versatile CVD technique provides a dry and controllable reaction environment,effectively pledging the compact and clean catalytic interfaces between graphene and Co-based components.Additionally,programmed reactions introduce defects such as vacancies and nitrogen heteroatoms into the catalysts.Notably,the graphene layer number and Co valence state can be delicately manipulated by altering the CVD reaction temperature.Specifically,few-layer graphene wrapped Co/Co_(3)O_(4)(FGr-Co/Co_(3)O_(4))prepared at 450 ℃ shows higher catalytic activity than the multi-layer graphene wrapped Co/CoO(MGr-Co/CoO)synthesized at 550 ℃,attributed to its comprehensive control of clean interface,valence distribution range and defects.Leveraging these advantages,the battery with FGr-Co/Co_(3)O_(4)shows favorable working stability with a degradation rate of only 0.08%over 500 cycles at 1.0 C.Furthermore,under an elevated sulfur loading of 6.1 mg cm^(–2),the battery harvests a remarkable areal capacity of 5.9 mA h cm^(–2)along with stable cyclic operation.
基金financially supported by the National Natural Science Foundation of China (No. 52377222)Natural Science Foundation of Hunan Province (No. 2023JJ20064)。
文摘The insulating nature and dissolution of vanadium-based oxides in aqueous electrolytes result in low capacity and lifespan during charge/discharge process, which is unable to meet the demands for the development and application of high-energy-density aqueous zinc-ion batteries(AZIBs). Herein, a novel V_(2)O_(5-x)@C composite cathode consisting of conductive carbon coatings with abundant oxygen vacancies is specifically designed through plasma-enhanced chemical vapor deposition(PECVD) method. As expected,the ideal microstructure of V_(2)O_(5-x)@C cathode enables large specific surface areas, fast electron/ion diffusion kinetics, and superior interfacial stability, which can realize outstanding cycling stability and electrochemical performance. Consequently, the V_(2)O_(5-x)@C composite cathode delivers a high reversible rate capacity of 130.6 mAh/g at 10 A/g and remains 277.6 mAh/g when returned to 1 A/g. In addition, the Zn//V_(2)O_(5-x)@C full cell can stably cycle for 1000 cycles with a high initial specific capacity of 149.2 m Ah/g,possessing 83.8% capacity retention at 5 A/g. The process of constructing a conductive layer on the surface of cathode materials while increasing oxygen vacancies in the structure through PECVD provides new insight into the design of high-performance cathode materials for AZIBs.
文摘The authors report the development of aλ~4.1μm quantum cascade laser grown by metal-organic chemical vapor deposition using strain-balanced In Ga As/In Al As materials.A device with a 7.5 mm cavity length and 6.5μm ridge width,bonded to an aluminum nitride heatsink,achieves maximum output powers of 3.4 W at 288 K in pulsed mode and 1.6 W at288 K in continuous-wave(CW)operation,with corresponding maximum wall-plug efficiencies of 14.8%and 9.3%.A kink is observed in the power–current curve under CW operation,which is absent in pulsed operation.Near-field results show that in CW operation,the horizontal beam quality factor M2fluctuates with current,indicating mode instability and highorder lateral mode excitation,while in pulsed mode,the horizontal M2remains stable around 1.3 as the current increases from 1.4 A to 1.9 A.
基金financial support from the Shanxi Scholarship Council of China(No.2024-057)the Water Conservancy Science and Technology Research and Promotion Project of Shanxi Province,China(No.2025GM13)the National Natural Science Foundation of China(No.52571048).
文摘The heteroepitaxy of diamond films has received widespread attention;however,its application remains limited owing to the mismatch in properties and structure between diamond and heterogeneous substrates.In this study,diamond films were successfully synthesized on high-entropy alloys(HEAs)substrates using microwave plasma chemical vapor deposition.The resulting diamond films were continuous,uniform,and adhered to the HEAs substrates.The mixed carbides were identified using X-ray diffraction,and the quality of the diamond films was examined using Raman spectroscopy.Moreover,the corrosion test revealed that the diamond/TiZrHfMo samples had excellent electrochemical stability and corrosion resistance with a corrosion potential value of-0.169 V in a 3.5wt%NaCl solution.A multiple regression model was established to evaluate the effects of the structure and growth parameters,which confirmed that the mixing entropy significantly affected the grain size and corrosion properties.
基金supported by TANAKA KIKINZOKU KOGYO K.Kfinancially supported by the National Research Foundation of Korea(NRF)grant funded by the Korea government(MSIT)(No.NRF-2022R1A2C2006764)the Materials and Components Technology Development Program of MOTIE/KEIT(No.[20012460])。
文摘Ruthenium(Ru)-based chalcogenide(S,Se)is a promising material in various fields,such as optics,photoelectrodes,and electrocatalysis,owing to its suitable bandgap for generating charge carriers under light illumination ranging from visible to near-infrared(NIR)and its high absorption coefficient.In this study,we report the synthesis of Ru Se_(2)thin films by chemical vapor deposition(CVD)with a bandgap matching the NIR region at 0.52 e V.Further,we demonstrated Ru S_(2x)Se_(2-2x)alloy films using the post-sulfurization process after CVD Ru Se_(2)with a tunable bandgap from 0.52 to 1.39 e V depending on sulfur composition.Remarkably,Ru S_(2x)Se_(2-2x)alloy film metal–semiconductor–metal(MSM)photodetector sulfurized at 500°C,with a 0.75 e V bandgap,exhibits enhanced broad absorption across NIR spectral ranges,suppressed dark current and high photoresponsivity in NIR wavelengths range even at zero-bias.We believe the bandgaptunable Ru S_(2x)Se_(2-2x)thin film through an efficient deposition method could be suitable for various optoelectronic applications.
基金Project (50802115) supported by the National Natural Science Foundation of ChinaProject (2010FJ4075) supported by Science and Technology Planning Project of Hunan Province, China+1 种基金Project (CDJJ-10010205) supported by the Science Foundation of Changsha University, ChinaProject supported by the Construct Program of the Key Discipline in Hunan Province, China
文摘Viscose activated carbon fibers （ACFs） were characterized using specific surface area, scanning electron modified with chemical vapor deposition （CVD）. The samples were microscopy （SEM）, pore size distribution and Fourier transform infrared spectroscopy （FTIR）. Batch adsorption experiments were carried out to investigate the adsorption behavior of modified ACFs for methyl orange（MO） from its aqueous solutions. The results show that the adsorption isotherms of MO onto modified ACFs well follows the Langmuir isotherm equation. The adsorption kinetics of MO can be well described by the pseudo second-order kinetic model. The adsorption process involves the intra-particle diffusion, but is not the only rate-controlling step. Thermodynamic parameters including AG, AH and AS were calculated, suggesting that the adsorption of MO onto modified ACFs is a spontaneous, exothermic and physisorption process. FTIR result indicates that the major adsorption mechanism of modified ACFs for MO is hydrogen bond.
文摘Two-dimensional transition metal dichalcogenides heterostructures have stimulated wide in- terest not only for the fundamental research, but also for the application of next generation electronic and optoelectronic devices. Herein, we report a successful two-step chemical vapor deposition strategy to construct vertically stacked van der Waals epitaxial In2Se3/MoSe2 heterostructures. Transmission electron microscopy characterization reveals clearly that the In2Se3 has well-aligned lattice orientation with the substrate of monolayer MoSe2. Due to the interaction between the In2Se3 and MoSe2 layers, the heterostructure shows the quench- ing and red-shift of photoluminescence. Moreover, the current rectification behavior and photovoltaic effect can be observed from the heterostructure, which is attributed to the unique band structure alignment of the heterostructure, and is further confirmed by Kevin probe force microscopy measurement. The synthesis approach via van der Waals epitaxy in this work can expand the way to fabricate a variety of two-dimensional heterostructures for potential applications in electronic and optoelectronic devices.
文摘ZnO thin films were grown on GaAs （001） substrates by metal-organic chemical vapor deposition （MOCVD） at low temperatures ranging from 100 to 400℃. DEZn and 1-12 O were used as the zinc precursor and oxygen precursor, respectively. The effects of the growth temperatures on the growth characteristics and optical properties of ZnO films were investigated. The X-ray diffraction measurement （XRD） results indicated that all the thin films were grown with highly c- axis orientation. The surface morphologies and crystal properties of the films were critically dependent on the growth temperatures. Although there was no evidence of epitaxial growth, the scanning electron microscopy （SEM） image of ZnO film grown at 400℃ revealed the presence of ZnO microcrystallines with closed packed hexagon structure. The photoluminescence spectrum at room temperature showed only bright band-edge （3. 33eV） emissions with little or no deep-level e- mission related to defects.
基金Supported by the Natural Science Foundation of Shandong Province of China （ZR2009BM011） and the Doctor Foundation of Shandong Province of China （BS2010NJ005）.
文摘Various methods for production of polysilicon have been proposed for lowering the production cost andenergy consumption, and enhancing productivity, which are critical for industrial applications. The fluidized bed chemical vapor deposition （FBCVD） method is a most promising alternative to conventional ones, but the homogeneous reaction of silane in FBCVD results in unwanted formation of fines, which will affect the product qualityand output. There are some other problems, such as heating degeneration due to undesired polysilicon deposition on the walls of the reactor and the heater. This article mainly reviews the technological development on FBCVD of polycrystalline silicon and the research status for solving the above problems. It also identifies a number of challenges to tackle and principles should be followed in the design ofa FBCVD reactor.
基金financially supported by the National Natural Science Foundation of China (Nos.50835002 and 51105102)。
文摘This paper introduces a feasible process to achieve the molybdenum disulfide atomic layers using chemical vapor deposition(CVD) method,with molybdenum thin film and solid sulfur as precursors.And some improvements were made to reduce the amount of metastable MoS_(2)-3 R.The morphology of the acquired MoS_(2) layers,existing as triangular flakes or large-area continuous films,can be controlled by adjusting the synthesis time and reacting temperature.The characterization results show that the monolayer MoS_(2) flakes reveal a(002)-oriented growth on SiO_(2)/Si substrates,and its crystalline domain size is approximately 30 μm,and the thickness is 0.65 nm.Since the synthesis of MoS_(2)-3 R is restrained,the electronic transport properties of MoS_(2) with different layers were investigated,revealing that those properties equal with those of MoS_(2) samples prepared by exfoliation methods.
文摘High quality TiC whiskers have been prepared by a modified chemical vapor deposition (CVD) method using TiCl4 and CH4 as reactant gases and Ni as substrate. The deposition temperature and gas flow mies have ampreciable effect on the whisker growth.The whisker orientations and morphology are determined by X-my diffraction (XRD),scanning electron micmpmph (SEM) and transmission electron microgmph (TEM).In addition to the spherical tips, spiral growth microsteps and obvious terraces are observed at the tips and side faces of whiskers in the present eoperiment. The whiskers grow mostly along (100) direction. The whisker growth mechanism is discussed in detail.
基金the National Key R&D Program of China(Grants No.2017YFB0703200)National Natural Science Foundation of China(Grants Nos.51702100,51972268)China Postdoctoral Science Foundation(Grants No.2018M643075)for financial support。
文摘The development of functional relationships between the observed deposition rate and the experimental conditions is an important step toward understanding and optimizing low-pressure chemical vapor deposition(LPCVD)or low-pressure chemical vapor infiltration(LPCVI).In the field of ceramic matrix composites(CMCs),methyltrichlorosilane(CH3 SiCl3,MTS)is the most widely used source gas system for SiC,because stoichiometric SiC deposit can be facilitated at 900°C–1300°C.However,the reliability and accuracy of existing numerical models for these processing conditions are rarely reported.In this study,a comprehensive transport model was coupled with gas-phase and surface kinetics.The resulting gas-phase kinetics was confirmed via the measured concentration of gaseous species.The relationship between deposition rate and 24 gaseous species has been effectively evaluated by combining the special superiority of the novel extreme machine learning method and the conventional sticking coefficient method.Surface kinetics were then proposed and shown to reproduce the experimental results.The proposed simulation strategy can be used for different material systems.
基金Project (Nos. 90610005 and 20576120) supported by the National Natural Science Foundation of China
文摘In this study, supported nonmetal (boron) doping TiO2 coating photocatalysts were prepared by chemical vapor deposition (CVD) to enhance the activity under visible light irradiation and avoid the recovering of TiO2. Boron atoms were successfully doped into the lattice of TiO2 through CVD, as evidenced from XPS analysis. B-doped TiO2 coating catalysts showed drastic and strong absorption in the visible light range with a red shift in the band gap transition. This novel B-TiO2 coating photocatalyst showed higher photocatalytic activity in methyl orange degradation under visible light irradiation than that of the pure TiO2 photocatalyst.
基金the support from National Natural Science Foundation of China (22208355, 22178363 and 21978300)the financial support and mica samples from Changzi Wu and RIKA technology CO., LTD.
文摘The performance of pearlescent pigment significantly affected by the grain size and the roughness of deposited film. The effect of TiCl_(4) concentration on the initial deposition of TiO_(2) on mica by atmospheric pressure chemical vapor deposition(APCVD) was investigated. The precursor concentration significantly affected the deposition and morphology of TiO_(2) grains assembling the film. The deposition time for fully covering the surface of mica decreased from 120 to 10 s as the TiCl_(4) concentration increased from 0.38%to 2.44%. The grain size increased with the TiCl_(4) concentration. The AFM and TEM analysis demonstrated that the aggregation of TiO_(2) clusters at the initial stage finally result to the agglomeration of fine TiO_(2) grains at high TiCl_(4) concentrations. Following the results, it was suggested that the nucleation density and size was easy to be adjusted when the TiCl_(4) concentration is below 0.90%.
基金the National Natural Science Foundation of China (No. 50975177)the Shanghai Scienceand Technology Plan of Action for Technical Standardsfor Innovation and Special (No. 08DZ0501700)
文摘The micro-crystalline diamond (MCD) and fine-grained diamond (FGD) films are deposited on commercial silicon nitride inserts by the hot-filament chemical vapor deposition (HFCVD) method. The friction andcutting properties of as-deposited MCD and FGD films coated silicon nitride (Si3N4) inserts are comparatively investigated in this study. The scanning electron microscopy (SEM) and Raman spectroscopy are adopted to studythe characterization of the deposited diamond films. The friction tests are conducted on a ball-on-plate typereciprocating friction tester in ambient air using Co-cemented tungsten carbide (WC-Co), Si3N4 and ball-bearing steel (BBS) balls as the mating materials of the diamond films. For sliding against WC-Co, Si3N4 and BBS,the FGD film presents lower friction coeffcients than the MCD film. However, after sliding against Si3N4, the FGD film is subject to more severe wear than the MCD film. The cutting performance of as-deposited MCD and FGD coated Si3N4 inserts is examined in dry turning glass fiber reinforced plastics (GFRP) composite materials,comparing with the uncoated Si3N4 insert. The results indicate that the lifetime of Si3N4 inserts can be prolonged by depositing the MCD or FGD film on them and the FGD coated insert shows longer cutting lifetime than the MCD coated one.
基金This work was supported by the National Natural Science Foundation of China under Grant No.50130010, Pok Ying-Tung Education Foundation under Grant No. 71045 and the AFCRST under PRA MX 97-04.
文摘Fe-Si ribbons and thin sheets with 6.5%Si content were prepared by means of the single roller rapid solidification and chemical vapor deposition (CVD), respectively. The initial textures of rapidly solidified Fe-6.5%Si ribbons were characteristic of the {100} fiber-type, which became weakened during primary recrystallization in various atmospheres. At the stage of secondary recrystallization, the {100} texture formed in Ar and the {110} texture in hydrogen, while there occurred a texture transformation from the {100} type to the {110} type in vacuum with the increase of annealing temperature. For Fe-6.5%Si sheets prepared by Si deposition in cold-rolled Fe-3%Si matrix sheets, their textures were dominated by the η-fiber (<001>//RD) with the maximum density at the {120}<001> orientations. After homogenization annealing, the η-fiber could evolve into the {130}<001> type or become more concentrated on the {120}<001> orientations, depending on the cold rolling modes of Fe-3%Si matrix sheets.
基金supported by the National Key Research and Development Program(No.2019YFE03100200)the State Key Lab for Advanced Metals and Materials,the Fund of National Key Laboratory of Solid-State Microwave Devices and Circuits,the National Natural Science Foundation of China(No.52102034)the Or-ganized Research Fund of North China University of Tech-nology(No.2023YZZKY12).The authors are very grateful for the financial support of these institutions.
文摘This study focused on the investigation of the edge effect of diamond films deposited by microwave plasma chemical vapor de-position.Substrate bulge height△h is a factor that affects the edge effect,and it was used to simulate plasma and guide the diamond-film deposition experiments.Finite-element software COMSOL Multiphysics was used to construct a multiphysics(electromagnetic,plasma,and fluid heat transfer fields)coupling model based on electron collision reaction.Raman spectroscopy and scanning electron microscopy were performed to characterize the experimental growth and validate the model.The simulation results reflected the experimental trends observed.Plasma discharge at the edge of the substrate accelerated due to the increase in△h(△h=0-3 mm),and the values of electron density(n_(c)),molar concentration of H(C_(H)),and molar concentration of CH_(3)(C_(CH_(3)))doubled at the edge(for the special concave sample with△h=−1 mm,the active chemical groups exhibited a decreased molar concentration at the edge of the substrate).At=0-3 mm,a high diamond growth rate and a large diamond grain size were observed at the edge of the substrate,and their values increased with.The uniformity of film thickness decreased with.The Raman spectra of all samples revealed the first-order characteristic peak of dia-mond near 1332 cm^(−1).When△h=−1 mm,tensile stress occurred in all regions of the film.When△h=1-3 mm,all areas in the film ex-hibited compressive stress.
基金Project supported by the National Natural Science Foundation of China(Grant No.61974141)Tianjin Municipal Science and Technology BureauScience and Technology Innovation Bureau of China-Singapore Tianjin Eco-City。
文摘We demonstrate high-performance broadband tunable external-cavity lasers(ECLs) with the metal-organic chemical vapor deposition(MOCVD) grown In As/In P quantum dots(QDs) structures. Without cavity facet coatings, the 3-d B spectral bandwidth of the Fabry–Perot(FP) laser is approximately 10.8 nm, while the tuning bandwidth of ECLs is 45 nm.Combined with the anti-reflection(AR)/high-reflection(HR) facet coating, a 92 nm bandwidth tuning range has been obtained with the wavelength covering from 1414 nm to 1506 nm. In most of the tuning range, the threshold current density is lower than 1.5 k A/cm2. The maximum output power of 6.5 m W was achieved under a 500 m A injection current.All achievements mentioned above were obtained under continuous-wave(CW) mode at room temperature(RT).
