Layered F-doped cathode materials 0.3 Li_2 MnO_3-0.7 LiMn_(1/3)Ni_(1/3)CO_(1/3))O_(2-x)F_x(x = 0, 0.01, 0.02, 0.03, 0.04,0.05) microspheres made up of nanosized primary grains were prepared through co-precipitation me...Layered F-doped cathode materials 0.3 Li_2 MnO_3-0.7 LiMn_(1/3)Ni_(1/3)CO_(1/3))O_(2-x)F_x(x = 0, 0.01, 0.02, 0.03, 0.04,0.05) microspheres made up of nanosized primary grains were prepared through co-precipitation method. The sample of x = 0.02 demonstrates a large discharge capacity of226 mAh g^(-1) over 100 cycles at 0.1 C and excellent rate performance with discharge capacity of 96 mAh g-1 at 5.0 C and room temperature. Particularly, this material shows much enhanced electrochemical performances even at high temperature of 55 ℃. It delivers a quite high discharge capacity of 233.7 mAh·g^(-1) at 1.0 C with capacity retention as high as 97.9% after 100 cycles. The results demonstrate that the fluorine incorporation stabilizes the cathode structure and maintains stable interfacial resistances.展开更多
以固态氧化物为原料,采用固态合成工艺制备Pb(Zn1/3Nb2/3)O3-Pb(Ni1/3Nb2/3)O3-Pb(ZrTi)O3(PZN-PNN-PZT)压电陶瓷,并研究了锆钛比(r(Zr)/r(Ti))、Ba2+的A位取代及Ba2+、La3+的A位复合取代对压电陶瓷电性能的影响。结果表明,PZN-PNN-PZT...以固态氧化物为原料,采用固态合成工艺制备Pb(Zn1/3Nb2/3)O3-Pb(Ni1/3Nb2/3)O3-Pb(ZrTi)O3(PZN-PNN-PZT)压电陶瓷,并研究了锆钛比(r(Zr)/r(Ti))、Ba2+的A位取代及Ba2+、La3+的A位复合取代对压电陶瓷电性能的影响。结果表明,PZN-PNN-PZT压电陶瓷在r(Zr)/r(Ti)=1.03下,进行Ba2+,La3+的A位复合取代后,即式子在Pb0.92Ba0.04La0.04(Ni1/3Nb2/3)y(Zn1/3Nb2/3)z Zrm Tin O3时压电性能最佳,其介电常数εT33/ε0=5 657,压电常数d33=709pC/N,机电耦合系数kp=0.69,品质因数Qm=45,居里温度TC=180.9℃。展开更多
基金financially supported by the National Natural Science Foundation of China (No. 51372136)the NSFC-Guangdong United Fund (No. U1401246)
文摘Layered F-doped cathode materials 0.3 Li_2 MnO_3-0.7 LiMn_(1/3)Ni_(1/3)CO_(1/3))O_(2-x)F_x(x = 0, 0.01, 0.02, 0.03, 0.04,0.05) microspheres made up of nanosized primary grains were prepared through co-precipitation method. The sample of x = 0.02 demonstrates a large discharge capacity of226 mAh g^(-1) over 100 cycles at 0.1 C and excellent rate performance with discharge capacity of 96 mAh g-1 at 5.0 C and room temperature. Particularly, this material shows much enhanced electrochemical performances even at high temperature of 55 ℃. It delivers a quite high discharge capacity of 233.7 mAh·g^(-1) at 1.0 C with capacity retention as high as 97.9% after 100 cycles. The results demonstrate that the fluorine incorporation stabilizes the cathode structure and maintains stable interfacial resistances.
文摘以固态氧化物为原料,采用固态合成工艺制备Pb(Zn1/3Nb2/3)O3-Pb(Ni1/3Nb2/3)O3-Pb(ZrTi)O3(PZN-PNN-PZT)压电陶瓷,并研究了锆钛比(r(Zr)/r(Ti))、Ba2+的A位取代及Ba2+、La3+的A位复合取代对压电陶瓷电性能的影响。结果表明,PZN-PNN-PZT压电陶瓷在r(Zr)/r(Ti)=1.03下,进行Ba2+,La3+的A位复合取代后,即式子在Pb0.92Ba0.04La0.04(Ni1/3Nb2/3)y(Zn1/3Nb2/3)z Zrm Tin O3时压电性能最佳,其介电常数εT33/ε0=5 657,压电常数d33=709pC/N,机电耦合系数kp=0.69,品质因数Qm=45,居里温度TC=180.9℃。
