The identification of ferroelectricity in oxides such as hafnium oxide,which are compatible with the contemporary semiconductor fabrication techniques,has contributed to a resurgence of ferroelectric devices in cuttin...The identification of ferroelectricity in oxides such as hafnium oxide,which are compatible with the contemporary semiconductor fabrication techniques,has contributed to a resurgence of ferroelectric devices in cutting-edge microelectronics.In a transistor structure,ferroelectric devices play the role of connecting a ferroelectric material to a semiconductor,which combines memory and logic operations at the level of a single device,thus meeting some of the most essential hardware requirements for new paradigms for artificial intelligence(A.I)chips.In this review,we addressed the issues associated with high-volume fabrication at advanced technology nodes(≤10 nm) at the material and device level.Moreover,we also reviewed the advancement of A.I chips such as neuro-inspired computer chips.For neuro-inspired A.I chips based on nonvolatile memory,four important metrics are suggested for benchmarking:computing density,energy efficiency,learning capability,and computing accuracy.It is inferred that ferroelectric devices can be a major hardware element in the design of future A.I chips,which will leads to an innovative approach to electronics that is termed ferroelectronics.展开更多
The rapid advancement of photonic integrated circuits(PICs)has presented a promising solution to meet future demands for faster data transmission,broader bandwidth,and lower power consumption.However,the indirect band...The rapid advancement of photonic integrated circuits(PICs)has presented a promising solution to meet future demands for faster data transmission,broader bandwidth,and lower power consumption.However,the indirect bandgap of silicon presents challenges in achieving optical gain,necessitating the integration of III-V materials through complex and costly bonding or epitaxial techniques.In this context,colloidal quantum dots(CQDs)have emerged as a viable alternative for on-chip light sources due to their unique properties,including cost-effective synthesis,high photoluminescence quantum yield,precisely tunable emission wavelengths across visible to near-infrared,and excellent solution processability.These distinct advantages position CQDs as promising components for next-generation optoelectronic devices,fueling advancements in fields such as telecommunications,sensing,and display technologies.In this review,we systematically examine the structural evolution of CQDs aiming at luminescent property enhancement and explore their integration with various photonic platforms.Key applications are discussed,focusing on waveguide-coupled CQD light-emitting diodes and lasers,metasurface-integrated CQD lasers,and cavity-coupled CQD single-photon sources.Additionally,this review presents recent efforts in promoting electrically pumped CQD lasers,highlighting the potential of CQD light sources to revolutionize on-chip photonic systems.Finally,we present prospects for further development of CQD-based on-chip light sources,emphasizing their role in the future of integrated photonics.展开更多
The advantages of on-chip integrated photodetectors,such as miniaturization,high integration,and reliability,make them an indispensable and important part of electronic devices and systems.Herein,we experimentally exh...The advantages of on-chip integrated photodetectors,such as miniaturization,high integration,and reliability,make them an indispensable and important part of electronic devices and systems.Herein,we experimentally exhibited a monolithically integrated ultraviolet photodetector utilizing GaN microcylinder epitaxial structure on Si wafer,with its photoresponse properties plasmonically boosted using Pt nanoparticles via specific sizes.When illuminated upon ultraviolet light at 0 V bias,the Pt/GaN device exhibits significant photovoltaic performances,including a peak responsivity of 200.1 mA W−1,external quantum efficiency of 65%,and other figures-of-merit.Finite element analysis and energy band theory confirm that the excellent photodetection properties of the Pt/GaN device are related to the strong plasmon absorption and the increase of hot electrons injected into the GaN conduction band,which considerably improves its photoresponse performance and robustness in application.To realize the multipurpose capability of the devices,we validated the application of Pt/GaN as turbidity sensing and achieved a resolution of up to 100 NTU.Moreover,the prepared devices can be used as optical data receivers for optical communication.These findings provide references for on-chip detectors to improve the overall system performance and promote the realization of more complex applications.展开更多
A programmable photonic solver for quadratic unconstrained binary optimization(QUBO)problems is demonstrated with a hybrid optoelectronic scheme,which consists of a photonic chip and an electronic driving board.The ph...A programmable photonic solver for quadratic unconstrained binary optimization(QUBO)problems is demonstrated with a hybrid optoelectronic scheme,which consists of a photonic chip and an electronic driving board.The photonic chip is employed to perform the optical vector-matrix multiplication(OVMM)to calculate the cost function of the QUBO problem,while the electronic processor runs the heuristic algorithm to search for the optimal solution.Due to the parallel and low-latency propagation of lightwaves,the calculation of the cost function can be accelerated.The photonic chip was fabricated on the silicon on insulator(SOI)substrate and integrated 16 high-speed electro-optic modulators,88 thermo-optic phase shifters,and 16 balanced photodetectors.The computing speed of the photonic chip is 1.66 TFLOP/s.As a proof of principle,two randomly generated 16-dimensional QUBO problems are solved with high successful probabilities.These results present the potential of fast-solving optimization problems with integrated photonic systems.展开更多
Thin-film lithium niobate(TFLN)is considered a crucial platform in next-generation integrated optoelectronics due to its excellent optical properties.Photodetectors are essential components for constructing fully func...Thin-film lithium niobate(TFLN)is considered a crucial platform in next-generation integrated optoelectronics due to its excellent optical properties.Photodetectors are essential components for constructing fully functional photonic circuits.However,due to the low electrical conductivity and weak light absorption,TFLN cannot be directly used for fabricating photodetectors.In this study,we proposed and demonstrated a high-performance MoTe_(2)/TFLN heterostructure integrated Schottky photodetector operating at telecommunication wavelengths(1310 nm and 1550 nm).This structure enhances the photovoltaic effect by bending MoTe_(2)at the edge of one electrode,thereby achieving self-powered operation.At a wavelength of 1310 nm,the photodetector achieves a self-powered responsivity of 70 mA/W,which is among the highest for waveguide-integrated photodetectors.Additionally,due to the strong rectification effect of the Schottky junction,the photodetector exhibits an extremely low dark current of only 25 pA at−0.5 V bias voltage.The on/off ratios reach 2.63104 at 0 V and 4.13104 at−0.5 V bias.The self-powered response times were measured,showing fast response and recovery times of 160μs and 169μs,respectively.展开更多
Highly optical-absorption hybrid perovskites with upgraded stability and superior photoelectronic properties are essential for optoelectronics.However,various defects are generated by the solution-based film quality i...Highly optical-absorption hybrid perovskites with upgraded stability and superior photoelectronic properties are essential for optoelectronics.However,various defects are generated by the solution-based film quality inevitably produces during the crystallization process,which leads to non-radiative recombination and interface mismatch.In this work,polyvinylpyrrolidone(PVP)molecule layer was implemented as the interfacially multifunctional layer and selective transport layer to fabricate an effective photodetector.Interfacial PVP is conductive to the bond coordination between the PVP molecule and the MAPbI_(3)surface,which could lower the work function of the perovskite film and effectively improve its surface morphology so as to isolate it from water and oxygen molecules.The interfacial passivation for the undercoordinated Pb^(2+)defects was also verified via first-principles calculations.The electron injection barrier can be regulated via interfacial molecule engineering,leading to the result that the dark current is suppressed by five orders of magnitude to 1.57310−11 A,and the specific detectivity improved by about three orders of magnitude reaching 2.9310^(12)Jones.These results provide a feasible route to fabricate highly sensitive and stable hybrid perovskite photodetectors.展开更多
Polarized photodetector can achieve higher resolution and gather more detailed surface information about imaging targets in complex environments by identifying light polarization.However,it still remains challenging t...Polarized photodetector can achieve higher resolution and gather more detailed surface information about imaging targets in complex environments by identifying light polarization.However,it still remains challenging to achieve both a high polarization ratio(>10)and a fast response time.In this work,we demonstrated a gate-tunable polarized photodetector utilizing 2D semiconductor MoSe_(2)and semimetal 1T'-MoTe_(2).Leveraging the anisotropic inplane structure of 1T'-MoTe_(2),our device exhibits excellent polarization-sensitive photodetection with a polarization ratio as high as 15.48.The photodetector shows a rapid rise and decay time of 362μs and 480μs under 405 nm light illumination with a broad spectral photoresponse spanning 265 to 880 nm.Key performance metrics include a high responsivity of 130.89 mA/W and a specific detectivity of 1.153×10^(11) Jones.By combining the photodetector’s fast imaging capability with a mechanistic learning approach,precise image recognition was achieved.This work opens new avenues for developing two-dimensional material-based systems for polarized light imaging and image identification.展开更多
The accurate characterization of the spatial electric field generated by electrodes in a surface electrode trap is of paramount importance.In this pursuit,we have identified a simple yet highly precise parametric expr...The accurate characterization of the spatial electric field generated by electrodes in a surface electrode trap is of paramount importance.In this pursuit,we have identified a simple yet highly precise parametric expression to describe the spatial field of a rectangularshaped electrode.Leveraging this expression,we introduced an optimization method designed to accurately characterize the axial electric field intensity produced by the powered electrode and the stray field.Distinct from the existing methods,our approach integrates a diverse array of experimental data,including the equilibrium positions of ions in a linear string,the equilibrium positions of single trapped ions,and trap frequencies,to effectively reduce the systematic errors.This approach provides considerable flexibility in voltage settings for data acquisition,making it especially advantageous for surface electrode traps where the trapping height of ion probes may vary with casual voltage settings.In our experimental demonstration,we successfully minimized the discrepancy between observations and model predictions to a remarkable degree.The relative errors of secular frequencies were contained within±0.5%,and the positional error of ions was constrained to less than 1.2μm,which surpasses the performance of current methodologies.展开更多
Large-scale superconducting quantum computers require massive numbers of high-performance cryogenic low-noise amplifiers(cryo-LNAs)for qubit readout.Here we presented a C-band monolithic microwave integrated circuit(M...Large-scale superconducting quantum computers require massive numbers of high-performance cryogenic low-noise amplifiers(cryo-LNAs)for qubit readout.Here we presented a C-band monolithic microwave integrated circuit(MMIC)cryo-LNA for this purpose.This cryo-LNA is based on a 150 nm gallium arsenide(GaAs)pseudomorphic high electron mobility transistor(pHEMT)process and implemented with a three-stage cascaded architecture,where the first stage adopts careful impedance matching to optimize the noise and return loss.The integration of negative feedback loops adopted in the second and third stages enhances the overall stability.Moreover,the pHEMT self-bias and current multiplexing circuitry structure facilitate the reduction of power consumption and require only a single bias line.Operating at an ambient temperature of 3.6 K and consuming 15 mW,the cryoLNA demonstrates good performance in the C-band,reaching a minimum noise temperature of 4 K and an average gain of 40 dB.We further benchmarked this cryo-LNA with superconducting qubits,achieving an average single-shot dispersive readout fidelity of 98.3%without assistance from a quantum-limited parametric amplifier.The development of GaAs cryo-LNA diversifies technical support necessary for large-scale quantum applications.展开更多
Integrated optics have been stuck in two-dimensional(2D)topologies for decades until the femtosecond laser direct writing(FLDW)technique enables direct lithography of three-dimensional(3D)geometries and nanoscale stru...Integrated optics have been stuck in two-dimensional(2D)topologies for decades until the femtosecond laser direct writing(FLDW)technique enables direct lithography of three-dimensional(3D)geometries and nanoscale structures with rapid prototyping and large-scale manufacturing capabilities in a variety of transparent substrates.The 3D capability of FLDW makes diverse lightwave remapping geometries possible,thereby realizing efficient interconnection of optical systems at different spatial scales,offering a 3D integrated-optics footprint capable of scaling a benchtop optical system down to a 3D glass chip.This work summarizes the history and important milestones in developing FLDW waveguides.Basically,all revolutionary improvements in waveguide key performance,including low propagation loss and small bending radius,were accompanied by the discovery and development of new mechanisms for laser-induced refractive index modification.At the same time,advanced laser beam-shaping methods for tightly focused spatiotemporal fields have been technically grafted onto the fine control of laser–matter interaction in FLDW,notably achieving variable cross-section,arbitrary refractive index and mode-field distribution,thus providing new degrees of freedom beyond the limitations of traditional 2D planar waveguides for more complex photonics circuit design.In this work,we present a comprehensive review of the field,encompassing fundamental mechanisms(such as refractive index modification)as well as key technological advances that enable true 3D integration.On the basis of this,we summarize the basic integrated waveguide components fabricated by FLDW and point out the prospective challenges and future research directions.Tentative routes towards large-area,ultra-broadband,hybrid,multifunctional,all-optical system integration in 3D glass chips are also suggested.展开更多
Long-term continuous monitoring is essential for the Internet of Things(IoT),with efficient power use and sustainable energy supply as core challenges.This study presents a MEMS-based self-holding acoustic switch desi...Long-term continuous monitoring is essential for the Internet of Things(IoT),with efficient power use and sustainable energy supply as core challenges.This study presents a MEMS-based self-holding acoustic switch designed for uninterrupted monitoring of specific acoustic signals with zero power consumption.Microelectromechanical systems(MEMS)refer to miniaturized devices that integrate mechanical and electrical components on a single microchip.A mathematical model is developed to analyze the switch’s acoustic frequency response.Simulations and experiments demonstrate its acoustic-driven properties.Acoustic switches with different structural parameters are designed,achieving resonant frequencies ranging from 192 Hz to 862 Hz.Electrostatic voltages are applied to enable self-holding functionality,and the acoustic switch exhibits a contact resistance as low as 29.3 U.The acoustic switch successfully performs various functions,including acoustic sensing,frequency identification,on–off control,and self-holding,all without drawing power from an external power supply.By integrating this acoustic switch,a zero-power self-aware microsystem platform is realized,allowing zero-power sleep states without closed-loop circuits while remaining responsive to target acoustic signals.This technology effectively supports long-term,large-scale deployment of unattended IoT terminals.展开更多
Micro-electromechanical systems(MEMS)micromirrors are preferred actuators in the field of light beam steering.Electrostatic micromirrors have gained vital attention due to their simple and compact structure.Among perf...Micro-electromechanical systems(MEMS)micromirrors are preferred actuators in the field of light beam steering.Electrostatic micromirrors have gained vital attention due to their simple and compact structure.Among performance characteristics,the large field of view(FOV)and high structural reliability are key research hotspots.This work introduced a novel design of a three-asymptote support beam to improve the structural reliability,which is defined as a function with a shape coefficient,A.Simulation results reveal that the three-asymptote beam can reduce the chamfer stress from 690 MPa to 280 MPa compared with the conventional straight beam.Additionally,the resonant frequency of the micromirror can be adjusted via the shape coefficient.The micromirror prototype was fabricated using silicon-on-insulator-based micromachining and double-sided lithography technology.The vertically asymmetric electrostatic actuator comprises movable combs in the device layer and fixed combs in the handle layer.Furthermore,the performance of the prototype was tested in both static and resonant modes.The maximum static mechanical angle is 4.3°with a direct current voltage of 60 V,and the maximum angle is 3.1°at 445 Hz with a peak-to-peak voltage of 20 V in resonant mode.展开更多
The in-memory computing(IMC)paradigm emerges as an effective solution to break the bottlenecks of conventional von Neumann architecture.In the current work,an approximate multiplier in spin-orbit torque magnetoresisti...The in-memory computing(IMC)paradigm emerges as an effective solution to break the bottlenecks of conventional von Neumann architecture.In the current work,an approximate multiplier in spin-orbit torque magnetoresistive random access memory(SOTMRAM)based true IMC(STIMC)architecture was presented,where computations were performed natively within the cell array instead of in peripheral circuits.Firstly,basic Boolean logic operations were realized by utilizing the feature of unipolar SOT device.Two majority gate-based imprecise compressors and an ultra-efficient approximate multiplier were then built to reduce the energy and latency.An optimized data mapping strategy facilitating bit-serial operations with an extensive degree of parallelism was also adopted.Finally,the performance enhancements by performing our approximate multiplier in image smoothing were demonstrated.Detailed simulation results show that the proposed 838 approximate multiplier could reduce the energy and latency at least by 74.2%and 44.4%compared with the existing designs.Moreover,the scheme could achieve improved peak signal-to-noise ratio(PSNR)and structural similarity index metric(SSIM),ensuring high-quality image processing outcomes.展开更多
The human brain possesses a highly developed capability for sensing-memory-computing,and the integration of hardware with brain-like functions represents a novel approach to overcoming the von Neumann bottleneck.In th...The human brain possesses a highly developed capability for sensing-memory-computing,and the integration of hardware with brain-like functions represents a novel approach to overcoming the von Neumann bottleneck.In this study,Ga_(2)O_(3) photoelectric memristors were successfully fabricated,enabling efficient visual information processing and complex recognition through the integration of optoelectronic synapses with digital storage.The memristors with a Pt/Ga_(2)O_(3)/Pt sandwich structure exhibit the coexistence of unipolar resistive switching(URS)and bipolar resistive switching(BRS),coupled with an impressive switching ratio and stable retention characteristics.The device demonstrates robust photo-responsive properties to ultraviolet(UV)light,which enables the realization of an array of 16 photoconductor types through the manipulation of four-timeframe pulse sequences.Exposure of the device to UV light elicits stable synaptic behaviors,including paired-pulse facilitation(PPF),short-term memory(STM),long-term memory(LTM),as well as learning-forgettingrelearning behavior.Moreover,the device exhibits outstanding image sensing,image memory,and neuromorphic visual preprocessing capabilities as a neuromorphic vision sensor(NVS).The integration of light pulse potentiation with electrical pulse depression yields a remarkable 100 conductances with superior linearity.This advanced functionality is further validated by the ability of the device to facilitate the recognition of 85.3%of handwritten digits by artificial neural networks(ANNs),which underscores the significant potential of artificial synapses in mimicking biological neural.展开更多
Accelerated margin loss during read after delay(RAD)is a newly discovered reliability concern in HfO2-based ferroelectric random access memories(FeRAMs),which significantly impacts the lifetime of the memory device.Un...Accelerated margin loss during read after delay(RAD)is a newly discovered reliability concern in HfO2-based ferroelectric random access memories(FeRAMs),which significantly impacts the lifetime of the memory device.Unlike conventional fatigue effect,this issue is closely linked to the coercive field(Ec)shift,or imprint,during bipolar electrical field cycling at intermediate frequency.The precise cause of imprint during RAD,however,remains elusive.To investigate,we employed customized electrical testing to examine the charge transfer behavior in static imprint(SI)and continuous read/write(CRW)scenarios,which can be viewed as RAD performed at minimum and maximum frequencies.Our findings reveal that interfacial charge injection is the primary mechanism for imprint in SI,while bulk charge drives the imprint in asymmetric CRW.Further exploration with a SPICE-based charge transfer model suggests that RAD-related imprint is the result of bulk charge migration,driven by the periodically restored depolarization field after read/write-back operation.Experimental verification supports this theory,highlighting the importance of interface engineering to enhance bound charge screening and element doping to elevate the migration barrier for bulk charges in addressing the RAD problem.展开更多
Floating gate memory devices based on two-dimensional materials hold tremendous potential for high-performance nonvolatile memory.However,the memory performance of the devices utilizing the same two-dimensional hetero...Floating gate memory devices based on two-dimensional materials hold tremendous potential for high-performance nonvolatile memory.However,the memory performance of the devices utilizing the same two-dimensional heterostructures exhibits significant differences from lab to lab,which is often attributed to variations in material thickness or interface quality without a detailed exploration.Such uncontrollable performance coupled with an insufficient understanding of the underlying working mechanism hinders the advancement of high-performance floating gate memory.Here,we report controllable and stable memory performance in floating gate memory devices through device structure design under precisely identical conditions.For the first time,the general differences in polarity and on/off ratio of the memory window caused by distinct structural features have been revealed and the underlying working mechanisms were clearly elucidated.Moreover,controllable tunneling paths that are responsible for two-terminal memory performance have also been demonstrated.The findings provide a general and reliable strategy for polarity control and performance optimization of two-dimensional floating gate memory devices.展开更多
In this work,we demonstrate an extremely low annealing processing at 300C for the crystallization of Hf_(0.5)Zr_(0.5)O_(2)(HZO)films with the adoption of microwave annealing(MWA).Compared to conventional annealing met...In this work,we demonstrate an extremely low annealing processing at 300C for the crystallization of Hf_(0.5)Zr_(0.5)O_(2)(HZO)films with the adoption of microwave annealing(MWA).Compared to conventional annealing methods,an enhanced double remnant polarization(2Pr)of 55.4μC/cm^(2),a higher maximum dielectric constant,and nearly wakeup-free were realized by modulating the power of the microwave.It is believed that the increasing loss factor of zirconia with rising temperature allows more energy to be extracted from the microwave and transferred to the ferroelectric HZO molecules,which facilitates the crystallization at low temperature.Furthermore,an amorphous indium gallium zinc oxide ferroelectric fieldeffect transistor treated with microwave annealing was fabricated,and a competitive memory window of 1.5 V was substantially achieved.These findings offer insights into the integration of HfO_(2)ferroelectric materials in non-volatile memory devices compatible with back-end-of-line(BEOL)in the future.展开更多
Metasurface-enabled bound states in the continuum(BICs)provide a novel solution for achieving exceptionally high quality factors(Q factors),which could overcome the limitations of traditional mid-infrared filters,sens...Metasurface-enabled bound states in the continuum(BICs)provide a novel solution for achieving exceptionally high quality factors(Q factors),which could overcome the limitations of traditional mid-infrared filters,sensors,lasers,and nonlinear sources.However,most BIC metasurfaces are restricted by their sensitivity to specific incident angles,limiting their practical applications.Here,we introduced a germanium-based metasurface that supports two BIC modes for different polarizations,exhibiting robust angle insensitivity.By leveraging geometric asymmetry,we effectively controlled BIC leakage and coupling.The device maintained infinite Q factors under oblique incidence with preserved symmetry,and exhibited stable quasi-BIC resonance wavelengths and linewidths even with broken symmetry,regardless of TE or TM polarization.This angular robustness has been validated both theoretically and experimentally,demonstrating its potential for broadening the applicability of high-performance mid-infrared optical devices.展开更多
Wide-spectral and polarization-sensitive photodetectors are vital for applications in imaging,communication,and intelligent sensing.Although two-dimensional(2D)materials have shown great promise in enhancing the perfo...Wide-spectral and polarization-sensitive photodetectors are vital for applications in imaging,communication,and intelligent sensing.Although two-dimensional(2D)materials have shown great promise in enhancing the performance of these devices,conventional methods for spectral discrimination often rely on complex designs,such as external filters or multisensor systems,increasing system cost and complexity.Developing simplified devices that integrate spectral and polarization detection remains a key challenge.Here,we demonstrated a 2D MoTe_(2)/GeSe-based photodetector with wide-spectral photoresponse(400 to 1064 nm)and polarization sensitivity,achieving a responsivity of 1.35 A W^(−1)and a polarization ratio of 2.23 under 808 nm illumination.The device exhibited a unique 90°polarization reversal between green(532 nm)and red(808 nm),providing a novel mechanism for spectral discrimination.First-principles calculations reveal the polarization reversal phenomenon based on the heterostructure’s optical anisotropy.Furthermore,integration with a convolutional neural network enables intelligent traffic signal recognition using polarization-sensitive images.This work highlights the potential of MoTe_(2)/GeSe heterostructures for next-generation photodetectors,offering compact,multifunctional solutions with integrated spectral and polarization discrimination capabilities.展开更多
Human vision–inspired neuromorphic devices have integrated architectures that combine sensing,computing,and storage functions,which can fundamentally avoid the energy waste caused by frequent data movement in the cur...Human vision–inspired neuromorphic devices have integrated architectures that combine sensing,computing,and storage functions,which can fundamentally avoid the energy waste caused by frequent data movement in the currently widely used von Neumann architecture,and have crucial application potential in advanced artificial intelligence chips that pursue low power consumption and low latency.However,previously reported visual neuromorphic devices either suffer complex floating gate,vertically stacked multilayer structures,or necessitate separated optical-sensing and synaptic units,realizing highly compact,nonvolatile optoelectronic response and continuously tunable conductivity within a sententious architecture remains a significant challenge.Here,we presented a low-cost exfoliation and transfer method combined with spin-coating to fabricate molybdenum disulfide(MoS_(2))/barium titanate(BaTiO_(3))heterostructured optoelectronic devices.Based on the ferroelectricity of BaTiO_(3)and the charge transport characteristics of MoS_(2),the hysteresis of ferroelectric polarization upon both electric and optical stimulation is successfully endowed with reliable resistance state switching abilities,showing the advantages of low bias voltage operation(±2 V)and distinct 16 conductance states under light pulse irradiation.Besides,the MoS_(2)/BaTiO_(3)device can be further used to emulate biological synaptic behavior and accomplish the transition from short-term memory(STM)to long-term memory(LTM).Notably,leveraging the dual characteristics of imaging and neuromorphic behavior,we constructed a multi-layer perceptron network integrating visual perception and image recognition,showing an accuracy of 97.6%in the Modified National Institute of Standards and Technology(MNIST)pattern recognition task.This work introduced a simple MoS_(2)/BaTiO_(3)heterojunction architecture device,offering integrated perception,storage,and computing capabilities,providing a new possibility for future compact neuromorphic computing devices.展开更多
基金funded by the National Key Research and Development Program,grant umber 2022YFE0124200the National Natural Science Foundation of China,grant number:U2241221.
文摘The identification of ferroelectricity in oxides such as hafnium oxide,which are compatible with the contemporary semiconductor fabrication techniques,has contributed to a resurgence of ferroelectric devices in cutting-edge microelectronics.In a transistor structure,ferroelectric devices play the role of connecting a ferroelectric material to a semiconductor,which combines memory and logic operations at the level of a single device,thus meeting some of the most essential hardware requirements for new paradigms for artificial intelligence(A.I)chips.In this review,we addressed the issues associated with high-volume fabrication at advanced technology nodes(≤10 nm) at the material and device level.Moreover,we also reviewed the advancement of A.I chips such as neuro-inspired computer chips.For neuro-inspired A.I chips based on nonvolatile memory,four important metrics are suggested for benchmarking:computing density,energy efficiency,learning capability,and computing accuracy.It is inferred that ferroelectric devices can be a major hardware element in the design of future A.I chips,which will leads to an innovative approach to electronics that is termed ferroelectronics.
基金supported by the National Key Research and Development Program of China(No.2022YFB3606504)National Natural Science Foundation of China(No.62122034,No.62475171)+2 种基金Shenzhen Key Laborlatory for Advanced Quantum Dot Displays and Lighting(No.ZDSYS201707281632549)Shenzhen Stable Support Research Foundation(No.20220717215521001)High Level of Special Funds(No.G030230001,G03034K002)from Southern University of Science and Technology。
文摘The rapid advancement of photonic integrated circuits(PICs)has presented a promising solution to meet future demands for faster data transmission,broader bandwidth,and lower power consumption.However,the indirect bandgap of silicon presents challenges in achieving optical gain,necessitating the integration of III-V materials through complex and costly bonding or epitaxial techniques.In this context,colloidal quantum dots(CQDs)have emerged as a viable alternative for on-chip light sources due to their unique properties,including cost-effective synthesis,high photoluminescence quantum yield,precisely tunable emission wavelengths across visible to near-infrared,and excellent solution processability.These distinct advantages position CQDs as promising components for next-generation optoelectronic devices,fueling advancements in fields such as telecommunications,sensing,and display technologies.In this review,we systematically examine the structural evolution of CQDs aiming at luminescent property enhancement and explore their integration with various photonic platforms.Key applications are discussed,focusing on waveguide-coupled CQD light-emitting diodes and lasers,metasurface-integrated CQD lasers,and cavity-coupled CQD single-photon sources.Additionally,this review presents recent efforts in promoting electrically pumped CQD lasers,highlighting the potential of CQD light sources to revolutionize on-chip photonic systems.Finally,we present prospects for further development of CQD-based on-chip light sources,emphasizing their role in the future of integrated photonics.
基金supported by National Natural Science Foundation of China(NSFC)(12374257)Funding for Outstanding Doctoral Dissertation in NUAA(BCXJ24-22).
文摘The advantages of on-chip integrated photodetectors,such as miniaturization,high integration,and reliability,make them an indispensable and important part of electronic devices and systems.Herein,we experimentally exhibited a monolithically integrated ultraviolet photodetector utilizing GaN microcylinder epitaxial structure on Si wafer,with its photoresponse properties plasmonically boosted using Pt nanoparticles via specific sizes.When illuminated upon ultraviolet light at 0 V bias,the Pt/GaN device exhibits significant photovoltaic performances,including a peak responsivity of 200.1 mA W−1,external quantum efficiency of 65%,and other figures-of-merit.Finite element analysis and energy band theory confirm that the excellent photodetection properties of the Pt/GaN device are related to the strong plasmon absorption and the increase of hot electrons injected into the GaN conduction band,which considerably improves its photoresponse performance and robustness in application.To realize the multipurpose capability of the devices,we validated the application of Pt/GaN as turbidity sensing and achieved a resolution of up to 100 NTU.Moreover,the prepared devices can be used as optical data receivers for optical communication.These findings provide references for on-chip detectors to improve the overall system performance and promote the realization of more complex applications.
基金the National Key Research and Development Program of China(2023YFB2806703)the National Natural Science Foundation of China(Grant No.U22A6004,92365210)is greatly acknowledgedsupported by Beijing National Research Center For Information Science And Technology,Frontier Science Center for Quantum Information,Beijing Academy of Quantum Information Sciences,Tsinghua University Initiative Scientific Research Program.
文摘A programmable photonic solver for quadratic unconstrained binary optimization(QUBO)problems is demonstrated with a hybrid optoelectronic scheme,which consists of a photonic chip and an electronic driving board.The photonic chip is employed to perform the optical vector-matrix multiplication(OVMM)to calculate the cost function of the QUBO problem,while the electronic processor runs the heuristic algorithm to search for the optimal solution.Due to the parallel and low-latency propagation of lightwaves,the calculation of the cost function can be accelerated.The photonic chip was fabricated on the silicon on insulator(SOI)substrate and integrated 16 high-speed electro-optic modulators,88 thermo-optic phase shifters,and 16 balanced photodetectors.The computing speed of the photonic chip is 1.66 TFLOP/s.As a proof of principle,two randomly generated 16-dimensional QUBO problems are solved with high successful probabilities.These results present the potential of fast-solving optimization problems with integrated photonic systems.
基金The National Natural Science Foundation of China(No.12105190,62275174)the Shenzhen Key Laboratory of Applied Technologies of Super-Diamond and Functional Crystals(ZDSYS20230626091303007).
文摘Thin-film lithium niobate(TFLN)is considered a crucial platform in next-generation integrated optoelectronics due to its excellent optical properties.Photodetectors are essential components for constructing fully functional photonic circuits.However,due to the low electrical conductivity and weak light absorption,TFLN cannot be directly used for fabricating photodetectors.In this study,we proposed and demonstrated a high-performance MoTe_(2)/TFLN heterostructure integrated Schottky photodetector operating at telecommunication wavelengths(1310 nm and 1550 nm).This structure enhances the photovoltaic effect by bending MoTe_(2)at the edge of one electrode,thereby achieving self-powered operation.At a wavelength of 1310 nm,the photodetector achieves a self-powered responsivity of 70 mA/W,which is among the highest for waveguide-integrated photodetectors.Additionally,due to the strong rectification effect of the Schottky junction,the photodetector exhibits an extremely low dark current of only 25 pA at−0.5 V bias voltage.The on/off ratios reach 2.63104 at 0 V and 4.13104 at−0.5 V bias.The self-powered response times were measured,showing fast response and recovery times of 160μs and 169μs,respectively.
基金supported by the National Natural Science Foundation of China(Nos.12064047 and 11864044)the Key Programme of Yunnan Fundamental Research Projects(No.202201AS070010)the Major Science and Technology Projects in Yunnan Province(No.202202AB080019).
文摘Highly optical-absorption hybrid perovskites with upgraded stability and superior photoelectronic properties are essential for optoelectronics.However,various defects are generated by the solution-based film quality inevitably produces during the crystallization process,which leads to non-radiative recombination and interface mismatch.In this work,polyvinylpyrrolidone(PVP)molecule layer was implemented as the interfacially multifunctional layer and selective transport layer to fabricate an effective photodetector.Interfacial PVP is conductive to the bond coordination between the PVP molecule and the MAPbI_(3)surface,which could lower the work function of the perovskite film and effectively improve its surface morphology so as to isolate it from water and oxygen molecules.The interfacial passivation for the undercoordinated Pb^(2+)defects was also verified via first-principles calculations.The electron injection barrier can be regulated via interfacial molecule engineering,leading to the result that the dark current is suppressed by five orders of magnitude to 1.57310−11 A,and the specific detectivity improved by about three orders of magnitude reaching 2.9310^(12)Jones.These results provide a feasible route to fabricate highly sensitive and stable hybrid perovskite photodetectors.
基金supported by the National Key Research and Development Program(Grant Nos.2021YFB3601202)the National Natural Science Foundation of China(Grant Nos.62204056)+2 种基金the Shanghai Science and Technology Development Funds(Grant No.22YF1402700)the Science and Technology Program of Shaanxi Province under Grant 2023-JC-YB-552the Opening Project of Key Laboratory of Optoelectronic Chemical Materials and Devices,Ministry of Education,Jianghan University under Grant JDGD-202310.
文摘Polarized photodetector can achieve higher resolution and gather more detailed surface information about imaging targets in complex environments by identifying light polarization.However,it still remains challenging to achieve both a high polarization ratio(>10)and a fast response time.In this work,we demonstrated a gate-tunable polarized photodetector utilizing 2D semiconductor MoSe_(2)and semimetal 1T'-MoTe_(2).Leveraging the anisotropic inplane structure of 1T'-MoTe_(2),our device exhibits excellent polarization-sensitive photodetection with a polarization ratio as high as 15.48.The photodetector shows a rapid rise and decay time of 362μs and 480μs under 405 nm light illumination with a broad spectral photoresponse spanning 265 to 880 nm.Key performance metrics include a high responsivity of 130.89 mA/W and a specific detectivity of 1.153×10^(11) Jones.By combining the photodetector’s fast imaging capability with a mechanistic learning approach,precise image recognition was achieved.This work opens new avenues for developing two-dimensional material-based systems for polarized light imaging and image identification.
基金supported by the National Nat-ural Science Foundation of China under Grant Nos.12204543,12174447,12004430,12074433,and 12174448.
文摘The accurate characterization of the spatial electric field generated by electrodes in a surface electrode trap is of paramount importance.In this pursuit,we have identified a simple yet highly precise parametric expression to describe the spatial field of a rectangularshaped electrode.Leveraging this expression,we introduced an optimization method designed to accurately characterize the axial electric field intensity produced by the powered electrode and the stray field.Distinct from the existing methods,our approach integrates a diverse array of experimental data,including the equilibrium positions of ions in a linear string,the equilibrium positions of single trapped ions,and trap frequencies,to effectively reduce the systematic errors.This approach provides considerable flexibility in voltage settings for data acquisition,making it especially advantageous for surface electrode traps where the trapping height of ion probes may vary with casual voltage settings.In our experimental demonstration,we successfully minimized the discrepancy between observations and model predictions to a remarkable degree.The relative errors of secular frequencies were contained within±0.5%,and the positional error of ions was constrained to less than 1.2μm,which surpasses the performance of current methodologies.
基金supported by the Science,Technology and Innovation Commission of Shenzhen Municipality(KQTD20210811090049034)the Innovation Program for Quantum Science and Technology(2021ZD0301703)Shenzhen Science and Technology Program(Grant No.RCBS20231211090815032,RCBS 20231211090824040).
文摘Large-scale superconducting quantum computers require massive numbers of high-performance cryogenic low-noise amplifiers(cryo-LNAs)for qubit readout.Here we presented a C-band monolithic microwave integrated circuit(MMIC)cryo-LNA for this purpose.This cryo-LNA is based on a 150 nm gallium arsenide(GaAs)pseudomorphic high electron mobility transistor(pHEMT)process and implemented with a three-stage cascaded architecture,where the first stage adopts careful impedance matching to optimize the noise and return loss.The integration of negative feedback loops adopted in the second and third stages enhances the overall stability.Moreover,the pHEMT self-bias and current multiplexing circuitry structure facilitate the reduction of power consumption and require only a single bias line.Operating at an ambient temperature of 3.6 K and consuming 15 mW,the cryoLNA demonstrates good performance in the C-band,reaching a minimum noise temperature of 4 K and an average gain of 40 dB.We further benchmarked this cryo-LNA with superconducting qubits,achieving an average single-shot dispersive readout fidelity of 98.3%without assistance from a quantum-limited parametric amplifier.The development of GaAs cryo-LNA diversifies technical support necessary for large-scale quantum applications.
基金National Natural Science Foundation of China(Nos.52432001,12404367)Natural Science Foundation of Zhejiang Province(No.LDG25F050001)+1 种基金National Key Research and Development Program of China(No.2024YFB4607403)the“Pioneer”and“Leading Goose”R&D Program of Zhejiang(No.2023C03089).
文摘Integrated optics have been stuck in two-dimensional(2D)topologies for decades until the femtosecond laser direct writing(FLDW)technique enables direct lithography of three-dimensional(3D)geometries and nanoscale structures with rapid prototyping and large-scale manufacturing capabilities in a variety of transparent substrates.The 3D capability of FLDW makes diverse lightwave remapping geometries possible,thereby realizing efficient interconnection of optical systems at different spatial scales,offering a 3D integrated-optics footprint capable of scaling a benchtop optical system down to a 3D glass chip.This work summarizes the history and important milestones in developing FLDW waveguides.Basically,all revolutionary improvements in waveguide key performance,including low propagation loss and small bending radius,were accompanied by the discovery and development of new mechanisms for laser-induced refractive index modification.At the same time,advanced laser beam-shaping methods for tightly focused spatiotemporal fields have been technically grafted onto the fine control of laser–matter interaction in FLDW,notably achieving variable cross-section,arbitrary refractive index and mode-field distribution,thus providing new degrees of freedom beyond the limitations of traditional 2D planar waveguides for more complex photonics circuit design.In this work,we present a comprehensive review of the field,encompassing fundamental mechanisms(such as refractive index modification)as well as key technological advances that enable true 3D integration.On the basis of this,we summarize the basic integrated waveguide components fabricated by FLDW and point out the prospective challenges and future research directions.Tentative routes towards large-area,ultra-broadband,hybrid,multifunctional,all-optical system integration in 3D glass chips are also suggested.
基金supported in part by the National Key Research and Development Program(Grant No.2023YFB3211200)the National Nature Science Foundation of China(Grant No.U21A6003 and L2324213).
文摘Long-term continuous monitoring is essential for the Internet of Things(IoT),with efficient power use and sustainable energy supply as core challenges.This study presents a MEMS-based self-holding acoustic switch designed for uninterrupted monitoring of specific acoustic signals with zero power consumption.Microelectromechanical systems(MEMS)refer to miniaturized devices that integrate mechanical and electrical components on a single microchip.A mathematical model is developed to analyze the switch’s acoustic frequency response.Simulations and experiments demonstrate its acoustic-driven properties.Acoustic switches with different structural parameters are designed,achieving resonant frequencies ranging from 192 Hz to 862 Hz.Electrostatic voltages are applied to enable self-holding functionality,and the acoustic switch exhibits a contact resistance as low as 29.3 U.The acoustic switch successfully performs various functions,including acoustic sensing,frequency identification,on–off control,and self-holding,all without drawing power from an external power supply.By integrating this acoustic switch,a zero-power self-aware microsystem platform is realized,allowing zero-power sleep states without closed-loop circuits while remaining responsive to target acoustic signals.This technology effectively supports long-term,large-scale deployment of unattended IoT terminals.
基金supported by the National Natural Science Foundation of China(Grant no.12032015,12121002).
文摘Micro-electromechanical systems(MEMS)micromirrors are preferred actuators in the field of light beam steering.Electrostatic micromirrors have gained vital attention due to their simple and compact structure.Among performance characteristics,the large field of view(FOV)and high structural reliability are key research hotspots.This work introduced a novel design of a three-asymptote support beam to improve the structural reliability,which is defined as a function with a shape coefficient,A.Simulation results reveal that the three-asymptote beam can reduce the chamfer stress from 690 MPa to 280 MPa compared with the conventional straight beam.Additionally,the resonant frequency of the micromirror can be adjusted via the shape coefficient.The micromirror prototype was fabricated using silicon-on-insulator-based micromachining and double-sided lithography technology.The vertically asymmetric electrostatic actuator comprises movable combs in the device layer and fixed combs in the handle layer.Furthermore,the performance of the prototype was tested in both static and resonant modes.The maximum static mechanical angle is 4.3°with a direct current voltage of 60 V,and the maximum angle is 3.1°at 445 Hz with a peak-to-peak voltage of 20 V in resonant mode.
基金supported in part by National Natural Science Foundation of China(Grant Nos.62374055,12327806)supported in part by Natural Science Foundation of Wuhan(Grant No.2024040701010049).
文摘The in-memory computing(IMC)paradigm emerges as an effective solution to break the bottlenecks of conventional von Neumann architecture.In the current work,an approximate multiplier in spin-orbit torque magnetoresistive random access memory(SOTMRAM)based true IMC(STIMC)architecture was presented,where computations were performed natively within the cell array instead of in peripheral circuits.Firstly,basic Boolean logic operations were realized by utilizing the feature of unipolar SOT device.Two majority gate-based imprecise compressors and an ultra-efficient approximate multiplier were then built to reduce the energy and latency.An optimized data mapping strategy facilitating bit-serial operations with an extensive degree of parallelism was also adopted.Finally,the performance enhancements by performing our approximate multiplier in image smoothing were demonstrated.Detailed simulation results show that the proposed 838 approximate multiplier could reduce the energy and latency at least by 74.2%and 44.4%compared with the existing designs.Moreover,the scheme could achieve improved peak signal-to-noise ratio(PSNR)and structural similarity index metric(SSIM),ensuring high-quality image processing outcomes.
基金supported by National Key Research and Development Program of China(Grant 2021YFA0715600,2021YFA0717700,2018YFB2202900)the National Natural Science Foundation of China(52192610,62274127,62374128,62304167)+4 种基金2023 Qinchuangyuan Construction Two Chain Integration Special Project(23LLRH0043)Key Research and Development Program of Shaanxi Province(Grant 2024GX-YBXM-512)the open fund of State Key Laboratory of Infrared Physics(SITPNLIST-ZD-2023-03)the open research fund of Songshan Lake Materials Laboratory(2023SLABFN02)the Fundamental Research Funds for the Central Universities and the Innovation Fund of Xidian University。
文摘The human brain possesses a highly developed capability for sensing-memory-computing,and the integration of hardware with brain-like functions represents a novel approach to overcoming the von Neumann bottleneck.In this study,Ga_(2)O_(3) photoelectric memristors were successfully fabricated,enabling efficient visual information processing and complex recognition through the integration of optoelectronic synapses with digital storage.The memristors with a Pt/Ga_(2)O_(3)/Pt sandwich structure exhibit the coexistence of unipolar resistive switching(URS)and bipolar resistive switching(BRS),coupled with an impressive switching ratio and stable retention characteristics.The device demonstrates robust photo-responsive properties to ultraviolet(UV)light,which enables the realization of an array of 16 photoconductor types through the manipulation of four-timeframe pulse sequences.Exposure of the device to UV light elicits stable synaptic behaviors,including paired-pulse facilitation(PPF),short-term memory(STM),long-term memory(LTM),as well as learning-forgettingrelearning behavior.Moreover,the device exhibits outstanding image sensing,image memory,and neuromorphic visual preprocessing capabilities as a neuromorphic vision sensor(NVS).The integration of light pulse potentiation with electrical pulse depression yields a remarkable 100 conductances with superior linearity.This advanced functionality is further validated by the ability of the device to facilitate the recognition of 85.3%of handwritten digits by artificial neural networks(ANNs),which underscores the significant potential of artificial synapses in mimicking biological neural.
基金supported by the National Natural Science Foundation of China under Grants 62025406。
文摘Accelerated margin loss during read after delay(RAD)is a newly discovered reliability concern in HfO2-based ferroelectric random access memories(FeRAMs),which significantly impacts the lifetime of the memory device.Unlike conventional fatigue effect,this issue is closely linked to the coercive field(Ec)shift,or imprint,during bipolar electrical field cycling at intermediate frequency.The precise cause of imprint during RAD,however,remains elusive.To investigate,we employed customized electrical testing to examine the charge transfer behavior in static imprint(SI)and continuous read/write(CRW)scenarios,which can be viewed as RAD performed at minimum and maximum frequencies.Our findings reveal that interfacial charge injection is the primary mechanism for imprint in SI,while bulk charge drives the imprint in asymmetric CRW.Further exploration with a SPICE-based charge transfer model suggests that RAD-related imprint is the result of bulk charge migration,driven by the periodically restored depolarization field after read/write-back operation.Experimental verification supports this theory,highlighting the importance of interface engineering to enhance bound charge screening and element doping to elevate the migration barrier for bulk charges in addressing the RAD problem.
基金supported by Beijing Natural Science Foundation(Grant No.Z210006)National Key R&D Plan(2022YFA1405600)National Natural Science Foundation of China(Grant No.12104051).
文摘Floating gate memory devices based on two-dimensional materials hold tremendous potential for high-performance nonvolatile memory.However,the memory performance of the devices utilizing the same two-dimensional heterostructures exhibits significant differences from lab to lab,which is often attributed to variations in material thickness or interface quality without a detailed exploration.Such uncontrollable performance coupled with an insufficient understanding of the underlying working mechanism hinders the advancement of high-performance floating gate memory.Here,we report controllable and stable memory performance in floating gate memory devices through device structure design under precisely identical conditions.For the first time,the general differences in polarity and on/off ratio of the memory window caused by distinct structural features have been revealed and the underlying working mechanisms were clearly elucidated.Moreover,controllable tunneling paths that are responsible for two-terminal memory performance have also been demonstrated.The findings provide a general and reliable strategy for polarity control and performance optimization of two-dimensional floating gate memory devices.
基金supported by National Key Research and Development Program of China under Grant 2021YFB3202500Shanghai Municipal Science and Technology Commission under Grant 23511102300.
文摘In this work,we demonstrate an extremely low annealing processing at 300C for the crystallization of Hf_(0.5)Zr_(0.5)O_(2)(HZO)films with the adoption of microwave annealing(MWA).Compared to conventional annealing methods,an enhanced double remnant polarization(2Pr)of 55.4μC/cm^(2),a higher maximum dielectric constant,and nearly wakeup-free were realized by modulating the power of the microwave.It is believed that the increasing loss factor of zirconia with rising temperature allows more energy to be extracted from the microwave and transferred to the ferroelectric HZO molecules,which facilitates the crystallization at low temperature.Furthermore,an amorphous indium gallium zinc oxide ferroelectric fieldeffect transistor treated with microwave annealing was fabricated,and a competitive memory window of 1.5 V was substantially achieved.These findings offer insights into the integration of HfO_(2)ferroelectric materials in non-volatile memory devices compatible with back-end-of-line(BEOL)in the future.
基金supported in part by the National Natural Science Foundation of China(Grant No.62105376)the Guangdong Zhujiang Project,Department of Science and Technology of Guangdong Province(Grant No.2021ZT09X070,2021QN02X488).
文摘Metasurface-enabled bound states in the continuum(BICs)provide a novel solution for achieving exceptionally high quality factors(Q factors),which could overcome the limitations of traditional mid-infrared filters,sensors,lasers,and nonlinear sources.However,most BIC metasurfaces are restricted by their sensitivity to specific incident angles,limiting their practical applications.Here,we introduced a germanium-based metasurface that supports two BIC modes for different polarizations,exhibiting robust angle insensitivity.By leveraging geometric asymmetry,we effectively controlled BIC leakage and coupling.The device maintained infinite Q factors under oblique incidence with preserved symmetry,and exhibited stable quasi-BIC resonance wavelengths and linewidths even with broken symmetry,regardless of TE or TM polarization.This angular robustness has been validated both theoretically and experimentally,demonstrating its potential for broadening the applicability of high-performance mid-infrared optical devices.
基金supported by the National Key Research and Development Program of China(Grant No.2024YFA1409700)Beijing Natural Science Foundation(Z220005)+3 种基金the National Natural Science Foundation of China(Grant No.62125404,U24A20285,12304540,62334007)CAS Project for Young Scientists in Basic Research(No.YSBR-053)the Talent Fund of Beijing Jiaotong University(2024XKRC091)the Training Program for Innovation and Entrepreneurship for Undergraduate(No.2024100041979).
文摘Wide-spectral and polarization-sensitive photodetectors are vital for applications in imaging,communication,and intelligent sensing.Although two-dimensional(2D)materials have shown great promise in enhancing the performance of these devices,conventional methods for spectral discrimination often rely on complex designs,such as external filters or multisensor systems,increasing system cost and complexity.Developing simplified devices that integrate spectral and polarization detection remains a key challenge.Here,we demonstrated a 2D MoTe_(2)/GeSe-based photodetector with wide-spectral photoresponse(400 to 1064 nm)and polarization sensitivity,achieving a responsivity of 1.35 A W^(−1)and a polarization ratio of 2.23 under 808 nm illumination.The device exhibited a unique 90°polarization reversal between green(532 nm)and red(808 nm),providing a novel mechanism for spectral discrimination.First-principles calculations reveal the polarization reversal phenomenon based on the heterostructure’s optical anisotropy.Furthermore,integration with a convolutional neural network enables intelligent traffic signal recognition using polarization-sensitive images.This work highlights the potential of MoTe_(2)/GeSe heterostructures for next-generation photodetectors,offering compact,multifunctional solutions with integrated spectral and polarization discrimination capabilities.
基金funded in part by the National Key Research and Development Program of China(2023YFA1407200)the NSAF(U2230111,U2330113,U2030103)+4 种基金the National Natural Science Foundation of China(62405114,12404577)the Guangdong Basic and Applied Basic Research Foundation(2025B1515020096,2023A0505050159,2022A1515110970,2023A1515110626)the Guangzhou S&T programme(2025A04J5851)industry-University-Research Cooperation Project of Zhuhai(2320004002614)the Fundamental and Application Foundation Project of Guangzhou(2024A04J3974).
文摘Human vision–inspired neuromorphic devices have integrated architectures that combine sensing,computing,and storage functions,which can fundamentally avoid the energy waste caused by frequent data movement in the currently widely used von Neumann architecture,and have crucial application potential in advanced artificial intelligence chips that pursue low power consumption and low latency.However,previously reported visual neuromorphic devices either suffer complex floating gate,vertically stacked multilayer structures,or necessitate separated optical-sensing and synaptic units,realizing highly compact,nonvolatile optoelectronic response and continuously tunable conductivity within a sententious architecture remains a significant challenge.Here,we presented a low-cost exfoliation and transfer method combined with spin-coating to fabricate molybdenum disulfide(MoS_(2))/barium titanate(BaTiO_(3))heterostructured optoelectronic devices.Based on the ferroelectricity of BaTiO_(3)and the charge transport characteristics of MoS_(2),the hysteresis of ferroelectric polarization upon both electric and optical stimulation is successfully endowed with reliable resistance state switching abilities,showing the advantages of low bias voltage operation(±2 V)and distinct 16 conductance states under light pulse irradiation.Besides,the MoS_(2)/BaTiO_(3)device can be further used to emulate biological synaptic behavior and accomplish the transition from short-term memory(STM)to long-term memory(LTM).Notably,leveraging the dual characteristics of imaging and neuromorphic behavior,we constructed a multi-layer perceptron network integrating visual perception and image recognition,showing an accuracy of 97.6%in the Modified National Institute of Standards and Technology(MNIST)pattern recognition task.This work introduced a simple MoS_(2)/BaTiO_(3)heterojunction architecture device,offering integrated perception,storage,and computing capabilities,providing a new possibility for future compact neuromorphic computing devices.
