The identification of ferroelectricity in oxides such as hafnium oxide,which are compatible with the contemporary semiconductor fabrication techniques,has contributed to a resurgence of ferroelectric devices in cuttin...The identification of ferroelectricity in oxides such as hafnium oxide,which are compatible with the contemporary semiconductor fabrication techniques,has contributed to a resurgence of ferroelectric devices in cutting-edge microelectronics.In a transistor structure,ferroelectric devices play the role of connecting a ferroelectric material to a semiconductor,which combines memory and logic operations at the level of a single device,thus meeting some of the most essential hardware requirements for new paradigms for artificial intelligence(A.I)chips.In this review,we addressed the issues associated with high-volume fabrication at advanced technology nodes(≤10 nm) at the material and device level.Moreover,we also reviewed the advancement of A.I chips such as neuro-inspired computer chips.For neuro-inspired A.I chips based on nonvolatile memory,four important metrics are suggested for benchmarking:computing density,energy efficiency,learning capability,and computing accuracy.It is inferred that ferroelectric devices can be a major hardware element in the design of future A.I chips,which will leads to an innovative approach to electronics that is termed ferroelectronics.展开更多
The advantages of on-chip integrated photodetectors,such as miniaturization,high integration,and reliability,make them an indispensable and important part of electronic devices and systems.Herein,we experimentally exh...The advantages of on-chip integrated photodetectors,such as miniaturization,high integration,and reliability,make them an indispensable and important part of electronic devices and systems.Herein,we experimentally exhibited a monolithically integrated ultraviolet photodetector utilizing GaN microcylinder epitaxial structure on Si wafer,with its photoresponse properties plasmonically boosted using Pt nanoparticles via specific sizes.When illuminated upon ultraviolet light at 0 V bias,the Pt/GaN device exhibits significant photovoltaic performances,including a peak responsivity of 200.1 mA W−1,external quantum efficiency of 65%,and other figures-of-merit.Finite element analysis and energy band theory confirm that the excellent photodetection properties of the Pt/GaN device are related to the strong plasmon absorption and the increase of hot electrons injected into the GaN conduction band,which considerably improves its photoresponse performance and robustness in application.To realize the multipurpose capability of the devices,we validated the application of Pt/GaN as turbidity sensing and achieved a resolution of up to 100 NTU.Moreover,the prepared devices can be used as optical data receivers for optical communication.These findings provide references for on-chip detectors to improve the overall system performance and promote the realization of more complex applications.展开更多
A programmable photonic solver for quadratic unconstrained binary optimization(QUBO)problems is demonstrated with a hybrid optoelectronic scheme,which consists of a photonic chip and an electronic driving board.The ph...A programmable photonic solver for quadratic unconstrained binary optimization(QUBO)problems is demonstrated with a hybrid optoelectronic scheme,which consists of a photonic chip and an electronic driving board.The photonic chip is employed to perform the optical vector-matrix multiplication(OVMM)to calculate the cost function of the QUBO problem,while the electronic processor runs the heuristic algorithm to search for the optimal solution.Due to the parallel and low-latency propagation of lightwaves,the calculation of the cost function can be accelerated.The photonic chip was fabricated on the silicon on insulator(SOI)substrate and integrated 16 high-speed electro-optic modulators,88 thermo-optic phase shifters,and 16 balanced photodetectors.The computing speed of the photonic chip is 1.66 TFLOP/s.As a proof of principle,two randomly generated 16-dimensional QUBO problems are solved with high successful probabilities.These results present the potential of fast-solving optimization problems with integrated photonic systems.展开更多
Thin-film lithium niobate(TFLN)is considered a crucial platform in next-generation integrated optoelectronics due to its excellent optical properties.Photodetectors are essential components for constructing fully func...Thin-film lithium niobate(TFLN)is considered a crucial platform in next-generation integrated optoelectronics due to its excellent optical properties.Photodetectors are essential components for constructing fully functional photonic circuits.However,due to the low electrical conductivity and weak light absorption,TFLN cannot be directly used for fabricating photodetectors.In this study,we proposed and demonstrated a high-performance MoTe_(2)/TFLN heterostructure integrated Schottky photodetector operating at telecommunication wavelengths(1310 nm and 1550 nm).This structure enhances the photovoltaic effect by bending MoTe_(2)at the edge of one electrode,thereby achieving self-powered operation.At a wavelength of 1310 nm,the photodetector achieves a self-powered responsivity of 70 mA/W,which is among the highest for waveguide-integrated photodetectors.Additionally,due to the strong rectification effect of the Schottky junction,the photodetector exhibits an extremely low dark current of only 25 pA at−0.5 V bias voltage.The on/off ratios reach 2.63104 at 0 V and 4.13104 at−0.5 V bias.The self-powered response times were measured,showing fast response and recovery times of 160μs and 169μs,respectively.展开更多
Highly optical-absorption hybrid perovskites with upgraded stability and superior photoelectronic properties are essential for optoelectronics.However,various defects are generated by the solution-based film quality i...Highly optical-absorption hybrid perovskites with upgraded stability and superior photoelectronic properties are essential for optoelectronics.However,various defects are generated by the solution-based film quality inevitably produces during the crystallization process,which leads to non-radiative recombination and interface mismatch.In this work,polyvinylpyrrolidone(PVP)molecule layer was implemented as the interfacially multifunctional layer and selective transport layer to fabricate an effective photodetector.Interfacial PVP is conductive to the bond coordination between the PVP molecule and the MAPbI_(3)surface,which could lower the work function of the perovskite film and effectively improve its surface morphology so as to isolate it from water and oxygen molecules.The interfacial passivation for the undercoordinated Pb^(2+)defects was also verified via first-principles calculations.The electron injection barrier can be regulated via interfacial molecule engineering,leading to the result that the dark current is suppressed by five orders of magnitude to 1.57310−11 A,and the specific detectivity improved by about three orders of magnitude reaching 2.9310^(12)Jones.These results provide a feasible route to fabricate highly sensitive and stable hybrid perovskite photodetectors.展开更多
The accurate characterization of the spatial electric field generated by electrodes in a surface electrode trap is of paramount importance.In this pursuit,we have identified a simple yet highly precise parametric expr...The accurate characterization of the spatial electric field generated by electrodes in a surface electrode trap is of paramount importance.In this pursuit,we have identified a simple yet highly precise parametric expression to describe the spatial field of a rectangularshaped electrode.Leveraging this expression,we introduced an optimization method designed to accurately characterize the axial electric field intensity produced by the powered electrode and the stray field.Distinct from the existing methods,our approach integrates a diverse array of experimental data,including the equilibrium positions of ions in a linear string,the equilibrium positions of single trapped ions,and trap frequencies,to effectively reduce the systematic errors.This approach provides considerable flexibility in voltage settings for data acquisition,making it especially advantageous for surface electrode traps where the trapping height of ion probes may vary with casual voltage settings.In our experimental demonstration,we successfully minimized the discrepancy between observations and model predictions to a remarkable degree.The relative errors of secular frequencies were contained within±0.5%,and the positional error of ions was constrained to less than 1.2μm,which surpasses the performance of current methodologies.展开更多
Long-term continuous monitoring is essential for the Internet of Things(IoT),with efficient power use and sustainable energy supply as core challenges.This study presents a MEMS-based self-holding acoustic switch desi...Long-term continuous monitoring is essential for the Internet of Things(IoT),with efficient power use and sustainable energy supply as core challenges.This study presents a MEMS-based self-holding acoustic switch designed for uninterrupted monitoring of specific acoustic signals with zero power consumption.Microelectromechanical systems(MEMS)refer to miniaturized devices that integrate mechanical and electrical components on a single microchip.A mathematical model is developed to analyze the switch’s acoustic frequency response.Simulations and experiments demonstrate its acoustic-driven properties.Acoustic switches with different structural parameters are designed,achieving resonant frequencies ranging from 192 Hz to 862 Hz.Electrostatic voltages are applied to enable self-holding functionality,and the acoustic switch exhibits a contact resistance as low as 29.3 U.The acoustic switch successfully performs various functions,including acoustic sensing,frequency identification,on–off control,and self-holding,all without drawing power from an external power supply.By integrating this acoustic switch,a zero-power self-aware microsystem platform is realized,allowing zero-power sleep states without closed-loop circuits while remaining responsive to target acoustic signals.This technology effectively supports long-term,large-scale deployment of unattended IoT terminals.展开更多
The in-memory computing(IMC)paradigm emerges as an effective solution to break the bottlenecks of conventional von Neumann architecture.In the current work,an approximate multiplier in spin-orbit torque magnetoresisti...The in-memory computing(IMC)paradigm emerges as an effective solution to break the bottlenecks of conventional von Neumann architecture.In the current work,an approximate multiplier in spin-orbit torque magnetoresistive random access memory(SOTMRAM)based true IMC(STIMC)architecture was presented,where computations were performed natively within the cell array instead of in peripheral circuits.Firstly,basic Boolean logic operations were realized by utilizing the feature of unipolar SOT device.Two majority gate-based imprecise compressors and an ultra-efficient approximate multiplier were then built to reduce the energy and latency.An optimized data mapping strategy facilitating bit-serial operations with an extensive degree of parallelism was also adopted.Finally,the performance enhancements by performing our approximate multiplier in image smoothing were demonstrated.Detailed simulation results show that the proposed 838 approximate multiplier could reduce the energy and latency at least by 74.2%and 44.4%compared with the existing designs.Moreover,the scheme could achieve improved peak signal-to-noise ratio(PSNR)and structural similarity index metric(SSIM),ensuring high-quality image processing outcomes.展开更多
The human brain possesses a highly developed capability for sensing-memory-computing,and the integration of hardware with brain-like functions represents a novel approach to overcoming the von Neumann bottleneck.In th...The human brain possesses a highly developed capability for sensing-memory-computing,and the integration of hardware with brain-like functions represents a novel approach to overcoming the von Neumann bottleneck.In this study,Ga_(2)O_(3) photoelectric memristors were successfully fabricated,enabling efficient visual information processing and complex recognition through the integration of optoelectronic synapses with digital storage.The memristors with a Pt/Ga_(2)O_(3)/Pt sandwich structure exhibit the coexistence of unipolar resistive switching(URS)and bipolar resistive switching(BRS),coupled with an impressive switching ratio and stable retention characteristics.The device demonstrates robust photo-responsive properties to ultraviolet(UV)light,which enables the realization of an array of 16 photoconductor types through the manipulation of four-timeframe pulse sequences.Exposure of the device to UV light elicits stable synaptic behaviors,including paired-pulse facilitation(PPF),short-term memory(STM),long-term memory(LTM),as well as learning-forgettingrelearning behavior.Moreover,the device exhibits outstanding image sensing,image memory,and neuromorphic visual preprocessing capabilities as a neuromorphic vision sensor(NVS).The integration of light pulse potentiation with electrical pulse depression yields a remarkable 100 conductances with superior linearity.This advanced functionality is further validated by the ability of the device to facilitate the recognition of 85.3%of handwritten digits by artificial neural networks(ANNs),which underscores the significant potential of artificial synapses in mimicking biological neural.展开更多
In this work,we demonstrate an extremely low annealing processing at 300C for the crystallization of Hf_(0.5)Zr_(0.5)O_(2)(HZO)films with the adoption of microwave annealing(MWA).Compared to conventional annealing met...In this work,we demonstrate an extremely low annealing processing at 300C for the crystallization of Hf_(0.5)Zr_(0.5)O_(2)(HZO)films with the adoption of microwave annealing(MWA).Compared to conventional annealing methods,an enhanced double remnant polarization(2Pr)of 55.4μC/cm^(2),a higher maximum dielectric constant,and nearly wakeup-free were realized by modulating the power of the microwave.It is believed that the increasing loss factor of zirconia with rising temperature allows more energy to be extracted from the microwave and transferred to the ferroelectric HZO molecules,which facilitates the crystallization at low temperature.Furthermore,an amorphous indium gallium zinc oxide ferroelectric fieldeffect transistor treated with microwave annealing was fabricated,and a competitive memory window of 1.5 V was substantially achieved.These findings offer insights into the integration of HfO_(2)ferroelectric materials in non-volatile memory devices compatible with back-end-of-line(BEOL)in the future.展开更多
Metasurface-enabled bound states in the continuum(BICs)provide a novel solution for achieving exceptionally high quality factors(Q factors),which could overcome the limitations of traditional mid-infrared filters,sens...Metasurface-enabled bound states in the continuum(BICs)provide a novel solution for achieving exceptionally high quality factors(Q factors),which could overcome the limitations of traditional mid-infrared filters,sensors,lasers,and nonlinear sources.However,most BIC metasurfaces are restricted by their sensitivity to specific incident angles,limiting their practical applications.Here,we introduced a germanium-based metasurface that supports two BIC modes for different polarizations,exhibiting robust angle insensitivity.By leveraging geometric asymmetry,we effectively controlled BIC leakage and coupling.The device maintained infinite Q factors under oblique incidence with preserved symmetry,and exhibited stable quasi-BIC resonance wavelengths and linewidths even with broken symmetry,regardless of TE or TM polarization.This angular robustness has been validated both theoretically and experimentally,demonstrating its potential for broadening the applicability of high-performance mid-infrared optical devices.展开更多
The increasing complexity of neural network applications has led to a demand for higher computational parallelism and more efficient synchronization in artificial intelligence(AI)chips.To achieve higher performance an...The increasing complexity of neural network applications has led to a demand for higher computational parallelism and more efficient synchronization in artificial intelligence(AI)chips.To achieve higher performance and lower power,a comprehensive and efficient approach is required to compile neural networks for implementation on dedicated hardware.Our first-generation deep learning accelerator,tensor computing unit,was presented with hardware and software solutions.It offered dedicated very long instruction words(VLIWs)instructions and multi-level repeatable direct memory access(DMA).The former lowers the instruction bandwidth requirement and makes it easier to parallelize the index and vector computations.The latter reduces the communication latency between the compute core and the asynchronous DMA,and also greatly alleviates the programming complexity.For operator implementation and optimization,the compiler-based data-flow generator and the instruction macro generator first produced a set of parameterized operators.Then,the tunerconfiguration generator pruned the search space and the distributed tuner framework selected the best data-flow pattern and corresponding parameters.Our tensor computing unit supports all the convolution parameters with full-shape dimensions.It can readily select proper operators to achieve 96%of the chip peak performance under certain shapes and find the best performance implementation within limited power.The evaluation of a large number of convolution shapes on our tensor computing unit chip shows the generated operators significantly outperform the handwritten ones,achieving 9%higher normalized performance than CUDA according to the silicon data.展开更多
While silicon carbide(SiC)metal-oxide-semiconductor field-effect transistors(MOSFETs)have entered commercial markets,they still rely on specialized device structural approaches tailored to meet specific application de...While silicon carbide(SiC)metal-oxide-semiconductor field-effect transistors(MOSFETs)have entered commercial markets,they still rely on specialized device structural approaches tailored to meet specific application demands.The intricate and interdependent relationships among diverse physical parameters of SiC MOSFETs have not been fully elucidated to address the trade-offs that influence each other.This study aims to clarify these complex relationships and propose a well-balanced trade-off strategy.The proposed buried-MOS configuration ensures a harmonious balance among lower Ron,sp,reduced CGD,and milder EOX without compromising breakdown voltage(BV),thereby optimizing the interconnected physical parameters of SiC devices and significantly enhancing their highvoltage,high-frequency performance and reliability.The experimental results quantitatively demonstrate the advantages of the buried-MOS structure:high-frequency figure of merit high-frequency figure of merit(HF-FOM)(RDS,on3CGD)by 2.53,HF-FOM(RDS,on 3 QGD)by 2.23 and Baliga figure of merit(BFOM[4BV^(2)/Ron,sp)by 1.73 compared with the conventional BOX-MOS.Importantly,this approach embodies both theoretical significance and practical applicability,which is compatible with the existing large-scalemanufacturing processes and requires no additional steps.展开更多
Cross-entropy benchmarking is a central technique adopted to certify a quantum chip in recent investigations.To better understand its mathematical foundation and develop new benchmarking schemes,the concept of ergodic...Cross-entropy benchmarking is a central technique adopted to certify a quantum chip in recent investigations.To better understand its mathematical foundation and develop new benchmarking schemes,the concept of ergodicity was introduced to random circuit sampling and it was found that the Haar random quantum circuit could satisfy an ergodicity condition—the average of certain types of postprocessing function over the output bit strings is close to the average over the unitary ensemble.For noiseless random circuits,it was proven that the ergodicity holds for polynomials of degree t with positive coefficients when the random circuits form a unitary 2t-design.For strong enough noise,the ergodicity condition is violated,which suggests that ergodicity is a property that can be exploited to certify a quantum chip.The deviation of ergodicity was formulated as a measure for quantum chip benchmarking,and it was demonstrated that it can be used to estimate the circuit fidelity for global depolarizing noise and weakly correlated noise.For a quadratic postprocessing function,our framework recovered Google’s result on estimating the circuit fidelity via linear cross-entropy benchmarking(XEB),and we gave a sufficient condition on the noise model characterizing when such estimation is valid.The results establish an interesting connection between ergodicity and noise in random circuits and provide new insights into designing quantum benchmarking schemes.展开更多
High-performance electronics and optoelectronics play vital roles in modern society,as they are the fundamental building blocks of functional devices and systems.Two-dimensional semiconductor materials(2D-SCMs)are pot...High-performance electronics and optoelectronics play vital roles in modern society,as they are the fundamental building blocks of functional devices and systems.Two-dimensional semiconductor materials(2D-SCMs)are potential candidates for highperformance electronics and optoelectronics due to their excellent physical,chemical,electrical,and photonic properties.Owing to their special crystalline structure,they also present unique piezoelectricity,which opens a new door to the innovative fields of piezotronics and piezo-phototronics.Piezotronics and piezophototronics utilize the piezoelectric polarization charges produced when the 2D-SCMs undergo externally applied strains/stresses to modulate the performance of 2D-SCMs-based electronics and optoelectronics.In this review,firstly,the growth methods and piezoelectric properties of 2D-SCMs are stated,and the mechanisms of piezotronics and piezo-phototronics are also introduced.Afterwards,the recent progress of piezotronics and piezo-phototronics in high-performance 2D-SMCs-based electronics and optoelectronics are systematically reviewed.In addition,the functional devices and systems based on the piezotronics and piezo-phototronics in 2D-SMCs have been summarized.Finally,the research progresses are summarized,and future perspectives are proposed.展开更多
Nowadays,convolutional neural networks(CNNs)have become a powerful tool in areas such as object recognition and natural language processing.However,considering that electronic convolutional operation always contains m...Nowadays,convolutional neural networks(CNNs)have become a powerful tool in areas such as object recognition and natural language processing.However,considering that electronic convolutional operation always contains million-level parameters and complex calculation process,it consumes a large number of computing resources and time.To overcome these limitations,we proposed a design of complex-amplitude-modulated meta-device which could perform various functions of image processing.In this work,we demonstrated the excellent performance of twodimensional edge detection and Gaussian filtering.The proposed convolutional system could serve as a new optical computing hardware and provide a new approach for CNNs,biological microscopy,and near-infrared imaging.展开更多
Themass production and the practical number of cryogenic quantum devices producible in a single chip are limited to the number of electrical contact pads and wiring of the cryostat or dilution refrigerator.It is,there...Themass production and the practical number of cryogenic quantum devices producible in a single chip are limited to the number of electrical contact pads and wiring of the cryostat or dilution refrigerator.It is,therefore,beneficial to contrast themeasurements of hundreds of devices fabricated in a single chip in one cooldown process to promote the scalability,integrability,reliability,and reproducibility of quantum devices and to save evaluation time,cost and energy.Here,we used a cryogenic on-chip multiplexer architecture and investigated the statistics of the 0.7 anomaly observed on the first three plateaus of the quantized conductance of semiconductor quantum point contact(QPC)transistors.Our single chips contain 256 split gate field-effect QPC transistors(QFET)each,with two 16-branch multiplexed source-drain and gate pads,allowing individual transistors to be selected,addressed and controlled through an electrostatic gate voltage process.A total of 1280 quantum transistors with nano-scale dimensions are patterned in 5 different chips of GaAs heterostructures.From the measurements of 571 functioning QFETs taken at temperatures T[1.4 K and T[40 mK,it is found that the spontaneous polarisation model and Kondo effect do not fit our results.Furthermore,some of the features in our data largely agreed with van Hove model with short-range interactions.Our approach provides further insight into the quantum mechanical properties and microscopic origin of the 0.7 anomaly in QFETs,paving the way for the development of semiconducting quantum circuits and integrated cryogenic electronics,for scalable quantum logic control,readout,synthesis,and processing applications.展开更多
Exceptional points(EPs),which are typically defined as the degener-acy points of a non-Hermitian Hamiltonian,have been investigated in various physical systems such as photonic systems.In particular,the intriguing top...Exceptional points(EPs),which are typically defined as the degener-acy points of a non-Hermitian Hamiltonian,have been investigated in various physical systems such as photonic systems.In particular,the intriguing topological structures around EPs have given rise to novel strategies for manipulating photons and the underlying mechanism is especially useful for on-chip photonic applications.Although some on-chip experiments with the adoption of lasers have been reported,EP-based photonic chips working in the quantum regime largely re-main elusive.In the current work,a single-photon experiment was proposed to dynamically encircle an EP in on-chip photonic waveg-uides possessing passive anti-parity-time symmetry.Photon coinci-dences measurement reveals a chiral feature of transporting single photons,which can act as a building block for on-chip quantum de-vices that require asymmetric transmissions.The findings in the cur-rent work pave the way for on-chip experimental study on the physics of EPs as well as inspiring applications for on-chip non-Hermitian quantum devices.展开更多
With the development of 5G technology and increasing chip integration,traditional active cooling methods struggle to meet the growing thermal demands of chips.Thermoelectric coolers(TECs)have garnered great attention ...With the development of 5G technology and increasing chip integration,traditional active cooling methods struggle to meet the growing thermal demands of chips.Thermoelectric coolers(TECs)have garnered great attention due to their rapid response,significant cooling differentials,strong compatibility,high stability and controllable device dimensions.In this review,starting from the fundamental principles of thermoelectric cooling and device design,high-performance thermoelectric cooling materials are summarized,and the progress of advanced on-chip TECs is comprehensively reviewed.Finally,the paper outlines the challenges and opportunities in TEC design,performance and applications,laying great emphasis on the critical role of thermoelectric cooling in addressing the evolving thermal management requirements in the era of emerging chip technologies.展开更多
基金funded by the National Key Research and Development Program,grant umber 2022YFE0124200the National Natural Science Foundation of China,grant number:U2241221.
文摘The identification of ferroelectricity in oxides such as hafnium oxide,which are compatible with the contemporary semiconductor fabrication techniques,has contributed to a resurgence of ferroelectric devices in cutting-edge microelectronics.In a transistor structure,ferroelectric devices play the role of connecting a ferroelectric material to a semiconductor,which combines memory and logic operations at the level of a single device,thus meeting some of the most essential hardware requirements for new paradigms for artificial intelligence(A.I)chips.In this review,we addressed the issues associated with high-volume fabrication at advanced technology nodes(≤10 nm) at the material and device level.Moreover,we also reviewed the advancement of A.I chips such as neuro-inspired computer chips.For neuro-inspired A.I chips based on nonvolatile memory,four important metrics are suggested for benchmarking:computing density,energy efficiency,learning capability,and computing accuracy.It is inferred that ferroelectric devices can be a major hardware element in the design of future A.I chips,which will leads to an innovative approach to electronics that is termed ferroelectronics.
基金supported by National Natural Science Foundation of China(NSFC)(12374257)Funding for Outstanding Doctoral Dissertation in NUAA(BCXJ24-22).
文摘The advantages of on-chip integrated photodetectors,such as miniaturization,high integration,and reliability,make them an indispensable and important part of electronic devices and systems.Herein,we experimentally exhibited a monolithically integrated ultraviolet photodetector utilizing GaN microcylinder epitaxial structure on Si wafer,with its photoresponse properties plasmonically boosted using Pt nanoparticles via specific sizes.When illuminated upon ultraviolet light at 0 V bias,the Pt/GaN device exhibits significant photovoltaic performances,including a peak responsivity of 200.1 mA W−1,external quantum efficiency of 65%,and other figures-of-merit.Finite element analysis and energy band theory confirm that the excellent photodetection properties of the Pt/GaN device are related to the strong plasmon absorption and the increase of hot electrons injected into the GaN conduction band,which considerably improves its photoresponse performance and robustness in application.To realize the multipurpose capability of the devices,we validated the application of Pt/GaN as turbidity sensing and achieved a resolution of up to 100 NTU.Moreover,the prepared devices can be used as optical data receivers for optical communication.These findings provide references for on-chip detectors to improve the overall system performance and promote the realization of more complex applications.
基金the National Key Research and Development Program of China(2023YFB2806703)the National Natural Science Foundation of China(Grant No.U22A6004,92365210)is greatly acknowledgedsupported by Beijing National Research Center For Information Science And Technology,Frontier Science Center for Quantum Information,Beijing Academy of Quantum Information Sciences,Tsinghua University Initiative Scientific Research Program.
文摘A programmable photonic solver for quadratic unconstrained binary optimization(QUBO)problems is demonstrated with a hybrid optoelectronic scheme,which consists of a photonic chip and an electronic driving board.The photonic chip is employed to perform the optical vector-matrix multiplication(OVMM)to calculate the cost function of the QUBO problem,while the electronic processor runs the heuristic algorithm to search for the optimal solution.Due to the parallel and low-latency propagation of lightwaves,the calculation of the cost function can be accelerated.The photonic chip was fabricated on the silicon on insulator(SOI)substrate and integrated 16 high-speed electro-optic modulators,88 thermo-optic phase shifters,and 16 balanced photodetectors.The computing speed of the photonic chip is 1.66 TFLOP/s.As a proof of principle,two randomly generated 16-dimensional QUBO problems are solved with high successful probabilities.These results present the potential of fast-solving optimization problems with integrated photonic systems.
基金The National Natural Science Foundation of China(No.12105190,62275174)the Shenzhen Key Laboratory of Applied Technologies of Super-Diamond and Functional Crystals(ZDSYS20230626091303007).
文摘Thin-film lithium niobate(TFLN)is considered a crucial platform in next-generation integrated optoelectronics due to its excellent optical properties.Photodetectors are essential components for constructing fully functional photonic circuits.However,due to the low electrical conductivity and weak light absorption,TFLN cannot be directly used for fabricating photodetectors.In this study,we proposed and demonstrated a high-performance MoTe_(2)/TFLN heterostructure integrated Schottky photodetector operating at telecommunication wavelengths(1310 nm and 1550 nm).This structure enhances the photovoltaic effect by bending MoTe_(2)at the edge of one electrode,thereby achieving self-powered operation.At a wavelength of 1310 nm,the photodetector achieves a self-powered responsivity of 70 mA/W,which is among the highest for waveguide-integrated photodetectors.Additionally,due to the strong rectification effect of the Schottky junction,the photodetector exhibits an extremely low dark current of only 25 pA at−0.5 V bias voltage.The on/off ratios reach 2.63104 at 0 V and 4.13104 at−0.5 V bias.The self-powered response times were measured,showing fast response and recovery times of 160μs and 169μs,respectively.
基金supported by the National Natural Science Foundation of China(Nos.12064047 and 11864044)the Key Programme of Yunnan Fundamental Research Projects(No.202201AS070010)the Major Science and Technology Projects in Yunnan Province(No.202202AB080019).
文摘Highly optical-absorption hybrid perovskites with upgraded stability and superior photoelectronic properties are essential for optoelectronics.However,various defects are generated by the solution-based film quality inevitably produces during the crystallization process,which leads to non-radiative recombination and interface mismatch.In this work,polyvinylpyrrolidone(PVP)molecule layer was implemented as the interfacially multifunctional layer and selective transport layer to fabricate an effective photodetector.Interfacial PVP is conductive to the bond coordination between the PVP molecule and the MAPbI_(3)surface,which could lower the work function of the perovskite film and effectively improve its surface morphology so as to isolate it from water and oxygen molecules.The interfacial passivation for the undercoordinated Pb^(2+)defects was also verified via first-principles calculations.The electron injection barrier can be regulated via interfacial molecule engineering,leading to the result that the dark current is suppressed by five orders of magnitude to 1.57310−11 A,and the specific detectivity improved by about three orders of magnitude reaching 2.9310^(12)Jones.These results provide a feasible route to fabricate highly sensitive and stable hybrid perovskite photodetectors.
基金supported by the National Nat-ural Science Foundation of China under Grant Nos.12204543,12174447,12004430,12074433,and 12174448.
文摘The accurate characterization of the spatial electric field generated by electrodes in a surface electrode trap is of paramount importance.In this pursuit,we have identified a simple yet highly precise parametric expression to describe the spatial field of a rectangularshaped electrode.Leveraging this expression,we introduced an optimization method designed to accurately characterize the axial electric field intensity produced by the powered electrode and the stray field.Distinct from the existing methods,our approach integrates a diverse array of experimental data,including the equilibrium positions of ions in a linear string,the equilibrium positions of single trapped ions,and trap frequencies,to effectively reduce the systematic errors.This approach provides considerable flexibility in voltage settings for data acquisition,making it especially advantageous for surface electrode traps where the trapping height of ion probes may vary with casual voltage settings.In our experimental demonstration,we successfully minimized the discrepancy between observations and model predictions to a remarkable degree.The relative errors of secular frequencies were contained within±0.5%,and the positional error of ions was constrained to less than 1.2μm,which surpasses the performance of current methodologies.
基金supported in part by the National Key Research and Development Program(Grant No.2023YFB3211200)the National Nature Science Foundation of China(Grant No.U21A6003 and L2324213).
文摘Long-term continuous monitoring is essential for the Internet of Things(IoT),with efficient power use and sustainable energy supply as core challenges.This study presents a MEMS-based self-holding acoustic switch designed for uninterrupted monitoring of specific acoustic signals with zero power consumption.Microelectromechanical systems(MEMS)refer to miniaturized devices that integrate mechanical and electrical components on a single microchip.A mathematical model is developed to analyze the switch’s acoustic frequency response.Simulations and experiments demonstrate its acoustic-driven properties.Acoustic switches with different structural parameters are designed,achieving resonant frequencies ranging from 192 Hz to 862 Hz.Electrostatic voltages are applied to enable self-holding functionality,and the acoustic switch exhibits a contact resistance as low as 29.3 U.The acoustic switch successfully performs various functions,including acoustic sensing,frequency identification,on–off control,and self-holding,all without drawing power from an external power supply.By integrating this acoustic switch,a zero-power self-aware microsystem platform is realized,allowing zero-power sleep states without closed-loop circuits while remaining responsive to target acoustic signals.This technology effectively supports long-term,large-scale deployment of unattended IoT terminals.
基金supported in part by National Natural Science Foundation of China(Grant Nos.62374055,12327806)supported in part by Natural Science Foundation of Wuhan(Grant No.2024040701010049).
文摘The in-memory computing(IMC)paradigm emerges as an effective solution to break the bottlenecks of conventional von Neumann architecture.In the current work,an approximate multiplier in spin-orbit torque magnetoresistive random access memory(SOTMRAM)based true IMC(STIMC)architecture was presented,where computations were performed natively within the cell array instead of in peripheral circuits.Firstly,basic Boolean logic operations were realized by utilizing the feature of unipolar SOT device.Two majority gate-based imprecise compressors and an ultra-efficient approximate multiplier were then built to reduce the energy and latency.An optimized data mapping strategy facilitating bit-serial operations with an extensive degree of parallelism was also adopted.Finally,the performance enhancements by performing our approximate multiplier in image smoothing were demonstrated.Detailed simulation results show that the proposed 838 approximate multiplier could reduce the energy and latency at least by 74.2%and 44.4%compared with the existing designs.Moreover,the scheme could achieve improved peak signal-to-noise ratio(PSNR)and structural similarity index metric(SSIM),ensuring high-quality image processing outcomes.
基金supported by National Key Research and Development Program of China(Grant 2021YFA0715600,2021YFA0717700,2018YFB2202900)the National Natural Science Foundation of China(52192610,62274127,62374128,62304167)+4 种基金2023 Qinchuangyuan Construction Two Chain Integration Special Project(23LLRH0043)Key Research and Development Program of Shaanxi Province(Grant 2024GX-YBXM-512)the open fund of State Key Laboratory of Infrared Physics(SITPNLIST-ZD-2023-03)the open research fund of Songshan Lake Materials Laboratory(2023SLABFN02)the Fundamental Research Funds for the Central Universities and the Innovation Fund of Xidian University。
文摘The human brain possesses a highly developed capability for sensing-memory-computing,and the integration of hardware with brain-like functions represents a novel approach to overcoming the von Neumann bottleneck.In this study,Ga_(2)O_(3) photoelectric memristors were successfully fabricated,enabling efficient visual information processing and complex recognition through the integration of optoelectronic synapses with digital storage.The memristors with a Pt/Ga_(2)O_(3)/Pt sandwich structure exhibit the coexistence of unipolar resistive switching(URS)and bipolar resistive switching(BRS),coupled with an impressive switching ratio and stable retention characteristics.The device demonstrates robust photo-responsive properties to ultraviolet(UV)light,which enables the realization of an array of 16 photoconductor types through the manipulation of four-timeframe pulse sequences.Exposure of the device to UV light elicits stable synaptic behaviors,including paired-pulse facilitation(PPF),short-term memory(STM),long-term memory(LTM),as well as learning-forgettingrelearning behavior.Moreover,the device exhibits outstanding image sensing,image memory,and neuromorphic visual preprocessing capabilities as a neuromorphic vision sensor(NVS).The integration of light pulse potentiation with electrical pulse depression yields a remarkable 100 conductances with superior linearity.This advanced functionality is further validated by the ability of the device to facilitate the recognition of 85.3%of handwritten digits by artificial neural networks(ANNs),which underscores the significant potential of artificial synapses in mimicking biological neural.
基金supported by National Key Research and Development Program of China under Grant 2021YFB3202500Shanghai Municipal Science and Technology Commission under Grant 23511102300.
文摘In this work,we demonstrate an extremely low annealing processing at 300C for the crystallization of Hf_(0.5)Zr_(0.5)O_(2)(HZO)films with the adoption of microwave annealing(MWA).Compared to conventional annealing methods,an enhanced double remnant polarization(2Pr)of 55.4μC/cm^(2),a higher maximum dielectric constant,and nearly wakeup-free were realized by modulating the power of the microwave.It is believed that the increasing loss factor of zirconia with rising temperature allows more energy to be extracted from the microwave and transferred to the ferroelectric HZO molecules,which facilitates the crystallization at low temperature.Furthermore,an amorphous indium gallium zinc oxide ferroelectric fieldeffect transistor treated with microwave annealing was fabricated,and a competitive memory window of 1.5 V was substantially achieved.These findings offer insights into the integration of HfO_(2)ferroelectric materials in non-volatile memory devices compatible with back-end-of-line(BEOL)in the future.
基金supported in part by the National Natural Science Foundation of China(Grant No.62105376)the Guangdong Zhujiang Project,Department of Science and Technology of Guangdong Province(Grant No.2021ZT09X070,2021QN02X488).
文摘Metasurface-enabled bound states in the continuum(BICs)provide a novel solution for achieving exceptionally high quality factors(Q factors),which could overcome the limitations of traditional mid-infrared filters,sensors,lasers,and nonlinear sources.However,most BIC metasurfaces are restricted by their sensitivity to specific incident angles,limiting their practical applications.Here,we introduced a germanium-based metasurface that supports two BIC modes for different polarizations,exhibiting robust angle insensitivity.By leveraging geometric asymmetry,we effectively controlled BIC leakage and coupling.The device maintained infinite Q factors under oblique incidence with preserved symmetry,and exhibited stable quasi-BIC resonance wavelengths and linewidths even with broken symmetry,regardless of TE or TM polarization.This angular robustness has been validated both theoretically and experimentally,demonstrating its potential for broadening the applicability of high-performance mid-infrared optical devices.
文摘The increasing complexity of neural network applications has led to a demand for higher computational parallelism and more efficient synchronization in artificial intelligence(AI)chips.To achieve higher performance and lower power,a comprehensive and efficient approach is required to compile neural networks for implementation on dedicated hardware.Our first-generation deep learning accelerator,tensor computing unit,was presented with hardware and software solutions.It offered dedicated very long instruction words(VLIWs)instructions and multi-level repeatable direct memory access(DMA).The former lowers the instruction bandwidth requirement and makes it easier to parallelize the index and vector computations.The latter reduces the communication latency between the compute core and the asynchronous DMA,and also greatly alleviates the programming complexity.For operator implementation and optimization,the compiler-based data-flow generator and the instruction macro generator first produced a set of parameterized operators.Then,the tunerconfiguration generator pruned the search space and the distributed tuner framework selected the best data-flow pattern and corresponding parameters.Our tensor computing unit supports all the convolution parameters with full-shape dimensions.It can readily select proper operators to achieve 96%of the chip peak performance under certain shapes and find the best performance implementation within limited power.The evaluation of a large number of convolution shapes on our tensor computing unit chip shows the generated operators significantly outperform the handwritten ones,achieving 9%higher normalized performance than CUDA according to the silicon data.
基金supported by the National Natural Science Foundation of China(Grant No.11705263)the Science and Technology Commission of Shanghai Municipality(Grant No.23511102602)+1 种基金National Key Research and Development Program of China(Grant No.2022YFB3604300,2022YFB3604301,2022YFB3604303)Youth Innovation Promotion Association CAS and Autonomous deployment project of State Key Laboratory of Materials for Integrated Circuits(No.SKLJC-Z2024-C02).
文摘While silicon carbide(SiC)metal-oxide-semiconductor field-effect transistors(MOSFETs)have entered commercial markets,they still rely on specialized device structural approaches tailored to meet specific application demands.The intricate and interdependent relationships among diverse physical parameters of SiC MOSFETs have not been fully elucidated to address the trade-offs that influence each other.This study aims to clarify these complex relationships and propose a well-balanced trade-off strategy.The proposed buried-MOS configuration ensures a harmonious balance among lower Ron,sp,reduced CGD,and milder EOX without compromising breakdown voltage(BV),thereby optimizing the interconnected physical parameters of SiC devices and significantly enhancing their highvoltage,high-frequency performance and reliability.The experimental results quantitatively demonstrate the advantages of the buried-MOS structure:high-frequency figure of merit high-frequency figure of merit(HF-FOM)(RDS,on3CGD)by 2.53,HF-FOM(RDS,on 3 QGD)by 2.23 and Baliga figure of merit(BFOM[4BV^(2)/Ron,sp)by 1.73 compared with the conventional BOX-MOS.Importantly,this approach embodies both theoretical significance and practical applicability,which is compatible with the existing large-scalemanufacturing processes and requires no additional steps.
基金the Sydney Quantum Academy and the support by the National Research Foundation,SingaporeA*STAR under its CQT Bridging Grant and its Quantum Engineering Program under grant NRF2021-QEP2-02-P05+7 种基金F.M.acknowledges the support by City University of Hong Kong(Project No.9610623)the Guangdong Provincial Quantum Science Strategic Initiative(Grant No.GDZX2203001,GDZX2403001)the YTJX academy.M.H.Y.is supported by National Natural Science Foundation of China(11875160 and U1801661)the Natural Science Foundation of Guangdong Province(2017B030308003)the Science,Technology and Innovation Commission of Shenzhen Municipality(JCYJ20170412152620376 and JCYJ20170817105046702 and KYTDPT20181011104202253)the Key R&D Program of Guangdong province(2018B030326001)the Economy,Trade and Information Commission of Shenzhen Municipality(201901161512)Guangdong Provincial Key Laboratory(Grant No.2019B121203002).
文摘Cross-entropy benchmarking is a central technique adopted to certify a quantum chip in recent investigations.To better understand its mathematical foundation and develop new benchmarking schemes,the concept of ergodicity was introduced to random circuit sampling and it was found that the Haar random quantum circuit could satisfy an ergodicity condition—the average of certain types of postprocessing function over the output bit strings is close to the average over the unitary ensemble.For noiseless random circuits,it was proven that the ergodicity holds for polynomials of degree t with positive coefficients when the random circuits form a unitary 2t-design.For strong enough noise,the ergodicity condition is violated,which suggests that ergodicity is a property that can be exploited to certify a quantum chip.The deviation of ergodicity was formulated as a measure for quantum chip benchmarking,and it was demonstrated that it can be used to estimate the circuit fidelity for global depolarizing noise and weakly correlated noise.For a quadratic postprocessing function,our framework recovered Google’s result on estimating the circuit fidelity via linear cross-entropy benchmarking(XEB),and we gave a sufficient condition on the noise model characterizing when such estimation is valid.The results establish an interesting connection between ergodicity and noise in random circuits and provide new insights into designing quantum benchmarking schemes.
基金supported by the National Natural Science Foundation of China(Grant No.62174131 and 61704135)the China Postdoctoral Science Foundation(Grant No.2018T111055 and 2017M613138)the Postdoctoral Research Project of Shaanxi Province(Grant No.2017BSHEDZZ30).
文摘High-performance electronics and optoelectronics play vital roles in modern society,as they are the fundamental building blocks of functional devices and systems.Two-dimensional semiconductor materials(2D-SCMs)are potential candidates for highperformance electronics and optoelectronics due to their excellent physical,chemical,electrical,and photonic properties.Owing to their special crystalline structure,they also present unique piezoelectricity,which opens a new door to the innovative fields of piezotronics and piezo-phototronics.Piezotronics and piezophototronics utilize the piezoelectric polarization charges produced when the 2D-SCMs undergo externally applied strains/stresses to modulate the performance of 2D-SCMs-based electronics and optoelectronics.In this review,firstly,the growth methods and piezoelectric properties of 2D-SCMs are stated,and the mechanisms of piezotronics and piezo-phototronics are also introduced.Afterwards,the recent progress of piezotronics and piezo-phototronics in high-performance 2D-SMCs-based electronics and optoelectronics are systematically reviewed.In addition,the functional devices and systems based on the piezotronics and piezo-phototronics in 2D-SMCs have been summarized.Finally,the research progresses are summarized,and future perspectives are proposed.
文摘Nowadays,convolutional neural networks(CNNs)have become a powerful tool in areas such as object recognition and natural language processing.However,considering that electronic convolutional operation always contains million-level parameters and complex calculation process,it consumes a large number of computing resources and time.To overcome these limitations,we proposed a design of complex-amplitude-modulated meta-device which could perform various functions of image processing.In this work,we demonstrated the excellent performance of twodimensional edge detection and Gaussian filtering.The proposed convolutional system could serve as a new optical computing hardware and provide a new approach for CNNs,biological microscopy,and near-infrared imaging.
基金supported by the National Key R&D Program of China(Grant No.2022YFA1405600)National Natural Science Foundation of China(Grant Nos.52202196,52172265,and 12104514)+2 种基金Hunan Provincial Science and Technology Department(Grant Nos.2022JJ40637 and 2021RC2005)Natural Science Foundation of Changsha(Grant Nos.kq2208289 and kq2208254)China National Postdoctoral Program for Innovative Talents(Grant No.BX2021377)。
基金financial support from EPSRC,UK.the China Scholarship Council(CSC)for its financial support.
文摘Themass production and the practical number of cryogenic quantum devices producible in a single chip are limited to the number of electrical contact pads and wiring of the cryostat or dilution refrigerator.It is,therefore,beneficial to contrast themeasurements of hundreds of devices fabricated in a single chip in one cooldown process to promote the scalability,integrability,reliability,and reproducibility of quantum devices and to save evaluation time,cost and energy.Here,we used a cryogenic on-chip multiplexer architecture and investigated the statistics of the 0.7 anomaly observed on the first three plateaus of the quantized conductance of semiconductor quantum point contact(QPC)transistors.Our single chips contain 256 split gate field-effect QPC transistors(QFET)each,with two 16-branch multiplexed source-drain and gate pads,allowing individual transistors to be selected,addressed and controlled through an electrostatic gate voltage process.A total of 1280 quantum transistors with nano-scale dimensions are patterned in 5 different chips of GaAs heterostructures.From the measurements of 571 functioning QFETs taken at temperatures T[1.4 K and T[40 mK,it is found that the spontaneous polarisation model and Kondo effect do not fit our results.Furthermore,some of the features in our data largely agreed with van Hove model with short-range interactions.Our approach provides further insight into the quantum mechanical properties and microscopic origin of the 0.7 anomaly in QFETs,paving the way for the development of semiconducting quantum circuits and integrated cryogenic electronics,for scalable quantum logic control,readout,synthesis,and processing applications.
基金supported by National Natural Sci-ence Foundation of China(NSFC)under Grants 61825502,11974140 and#61827826Scientific and Technological Development Plan Program of Jilin Province(SKL202302012)Work done in Hong Kong was supported by RGC Hong Kong(N_HKUST608/17,AoE/P-502/20 and C6013-18G-A)and by the Croucher Foundation.
文摘Exceptional points(EPs),which are typically defined as the degener-acy points of a non-Hermitian Hamiltonian,have been investigated in various physical systems such as photonic systems.In particular,the intriguing topological structures around EPs have given rise to novel strategies for manipulating photons and the underlying mechanism is especially useful for on-chip photonic applications.Although some on-chip experiments with the adoption of lasers have been reported,EP-based photonic chips working in the quantum regime largely re-main elusive.In the current work,a single-photon experiment was proposed to dynamically encircle an EP in on-chip photonic waveg-uides possessing passive anti-parity-time symmetry.Photon coinci-dences measurement reveals a chiral feature of transporting single photons,which can act as a building block for on-chip quantum de-vices that require asymmetric transmissions.The findings in the cur-rent work pave the way for on-chip experimental study on the physics of EPs as well as inspiring applications for on-chip non-Hermitian quantum devices.
基金supported by the National Natural Science Foundation of China(Grant No.92163211 and 52002137)the Fundamental Research Funds for the Central Universities(Grant No.2021XXJS008).
文摘With the development of 5G technology and increasing chip integration,traditional active cooling methods struggle to meet the growing thermal demands of chips.Thermoelectric coolers(TECs)have garnered great attention due to their rapid response,significant cooling differentials,strong compatibility,high stability and controllable device dimensions.In this review,starting from the fundamental principles of thermoelectric cooling and device design,high-performance thermoelectric cooling materials are summarized,and the progress of advanced on-chip TECs is comprehensively reviewed.Finally,the paper outlines the challenges and opportunities in TEC design,performance and applications,laying great emphasis on the critical role of thermoelectric cooling in addressing the evolving thermal management requirements in the era of emerging chip technologies.
