A new electrodeposition system, with a thin nickel wire as the anode, was used to deposit the CN x thin film on Si(100) substrate from a dicyandiamide-saturated solution in acetonitrile at a high potential. During the...A new electrodeposition system, with a thin nickel wire as the anode, was used to deposit the CN x thin film on Si(100) substrate from a dicyandiamide-saturated solution in acetonitrile at a high potential. During the experiment, when a certain high potential was applied, spark occurred between the Ni wire anode and the Si(100) substrate. The films were characterized by X-ray photoelectron spectroscopy(XPS), Fourier-transform infrared spectroscopy(FTIR), scaning electron microscopy(SEM) and X-ray diffraction(XRD). It was indicated that multiphase of α-C 3N 4, β-C 3N 4 and g-C 3N 4 was obtained in the films. This work is the first attempt to deposit carbon nitride material through a thin nickel wire anode and might provide a new route for preparing pure crystalline C 3N 4.展开更多
Nanogrinding of SiC wafers with high flatness and low subsurface damage was proposed and nanogrinding experiments were carried out on an ultra precision grinding machine with fine diamond wheels. Experimental results ...Nanogrinding of SiC wafers with high flatness and low subsurface damage was proposed and nanogrinding experiments were carried out on an ultra precision grinding machine with fine diamond wheels. Experimental results show that nanogrinding can produce flatness less than 1.0μm and a surface roughness Ra of 0.42nm. It is found that nanogrinding is capable of producing much flatter SiC wafers with a lower damage than double side lapping and mechanical polishing in much less time and it can replace double side lapping and mechanical polishing and reduce the removal amount of chemical mechanical polishing.展开更多
文摘A new electrodeposition system, with a thin nickel wire as the anode, was used to deposit the CN x thin film on Si(100) substrate from a dicyandiamide-saturated solution in acetonitrile at a high potential. During the experiment, when a certain high potential was applied, spark occurred between the Ni wire anode and the Si(100) substrate. The films were characterized by X-ray photoelectron spectroscopy(XPS), Fourier-transform infrared spectroscopy(FTIR), scaning electron microscopy(SEM) and X-ray diffraction(XRD). It was indicated that multiphase of α-C 3N 4, β-C 3N 4 and g-C 3N 4 was obtained in the films. This work is the first attempt to deposit carbon nitride material through a thin nickel wire anode and might provide a new route for preparing pure crystalline C 3N 4.
基金Project (50975040) supported by the National Natural Science Foundation of China
文摘Nanogrinding of SiC wafers with high flatness and low subsurface damage was proposed and nanogrinding experiments were carried out on an ultra precision grinding machine with fine diamond wheels. Experimental results show that nanogrinding can produce flatness less than 1.0μm and a surface roughness Ra of 0.42nm. It is found that nanogrinding is capable of producing much flatter SiC wafers with a lower damage than double side lapping and mechanical polishing in much less time and it can replace double side lapping and mechanical polishing and reduce the removal amount of chemical mechanical polishing.
