The synthesis of high-quality heteroepitaxial diamond films on iridium composite substrates is a critical step toward advancing diamond for electronic and optical applications.Microwave plasma chemical vapor depositio...The synthesis of high-quality heteroepitaxial diamond films on iridium composite substrates is a critical step toward advancing diamond for electronic and optical applications.Microwave plasma chemical vapor deposition,combined with in situ optical emission spectroscopy,enables precise control over growth modes through plasma parameter tuning.In this study,we examine how methane concentration,microwave power,and gas pressure influence plasma species and,consequently,the growth modes of heteroepitaxial diamond by optical emission spectroscopy and scanning electron microscope.At low nucleation densities,increased methane concentrations promote the transition from faceted polyhedral to ballas structures,driven by elevated C_(2) radical concentrations in the plasma.Conversely,at higher nucleation densities,gas pressure,and substrate temperature dominate growth mode determination,leading to diverse morphologies,such as planar,polycrystalline,octahedral,and step-flow growth.These findings elucidate the interplay among plasma species,growth parameters,and growth mode,offering critical insights for optimizing growth conditions and preparing heteroepitaxial diamond films in a specific growth mode.展开更多
基金funded by the National Key Research and Development Program of China(Grant No.2022YFB3608602)the National Natural Science Foundation of China(Grant Nos.62404215 and 62574199)Instrument and Equipment Development Project of CAS(Grant No.PTYQ2024TD0003)。
文摘The synthesis of high-quality heteroepitaxial diamond films on iridium composite substrates is a critical step toward advancing diamond for electronic and optical applications.Microwave plasma chemical vapor deposition,combined with in situ optical emission spectroscopy,enables precise control over growth modes through plasma parameter tuning.In this study,we examine how methane concentration,microwave power,and gas pressure influence plasma species and,consequently,the growth modes of heteroepitaxial diamond by optical emission spectroscopy and scanning electron microscope.At low nucleation densities,increased methane concentrations promote the transition from faceted polyhedral to ballas structures,driven by elevated C_(2) radical concentrations in the plasma.Conversely,at higher nucleation densities,gas pressure,and substrate temperature dominate growth mode determination,leading to diverse morphologies,such as planar,polycrystalline,octahedral,and step-flow growth.These findings elucidate the interplay among plasma species,growth parameters,and growth mode,offering critical insights for optimizing growth conditions and preparing heteroepitaxial diamond films in a specific growth mode.
