Two-dimensional(2D)transition metal dichalcogenides(TMDs),which allow atomic-scale manipulation,have supe-rior electrical and optical properties that challenge the limits of traditional bulk semiconductors like silico...Two-dimensional(2D)transition metal dichalcogenides(TMDs),which allow atomic-scale manipulation,have supe-rior electrical and optical properties that challenge the limits of traditional bulk semiconductors like silicon^([1,2]).As a repre-sentative TMD and a promising 2D channel material for high-performance,scalable p-type transistors,tungsten diselenide(WSe_(2))has attracted considerable academic and industrial interest for its potential in advanced complementary metal−oxide−semiconductor(CMOS)logic technology and in extending Moore’s Law^([3−7]).展开更多
The thermal switch plays a crucial role in regulating system temperature,protecting devices from overheating,and improving energy efficiency.Achieving a high thermal switching ratio is essential for its practical appl...The thermal switch plays a crucial role in regulating system temperature,protecting devices from overheating,and improving energy efficiency.Achieving a high thermal switching ratio is essential for its practical application.In this study,by utilizing first-principles calculations and semi-classical Boltzmann transport theory,it is found that hole doping with an experimentally achievable concentration of 1.83×10^(14)cm^(-2)can reduce the lattice thermal conductivity of monolayer MoS_(2) from 151.79 W·m^(-1)·K^(-1)to 12.19 W·m^(-1)·K^(-1),achieving a high thermal switching ratio of 12.5.The achieved switching ratio significantly surpasses previously reported values,including those achieved by extreme strain methods.This phenomenon mainly arises from the enhanced lattice anharmonicity,which is primarily contributed by the S atoms.These results indicate that hole doping is an effective method for tuning the lattice thermal conductivity of materials,and demonstrate that monolayer MoS_(2) is a potential candidate material for thermal switches.展开更多
文摘Two-dimensional(2D)transition metal dichalcogenides(TMDs),which allow atomic-scale manipulation,have supe-rior electrical and optical properties that challenge the limits of traditional bulk semiconductors like silicon^([1,2]).As a repre-sentative TMD and a promising 2D channel material for high-performance,scalable p-type transistors,tungsten diselenide(WSe_(2))has attracted considerable academic and industrial interest for its potential in advanced complementary metal−oxide−semiconductor(CMOS)logic technology and in extending Moore’s Law^([3−7]).
基金supported by the National Natural Science Foundation of China(Grant Nos.12104145 and 12374040)。
文摘The thermal switch plays a crucial role in regulating system temperature,protecting devices from overheating,and improving energy efficiency.Achieving a high thermal switching ratio is essential for its practical application.In this study,by utilizing first-principles calculations and semi-classical Boltzmann transport theory,it is found that hole doping with an experimentally achievable concentration of 1.83×10^(14)cm^(-2)can reduce the lattice thermal conductivity of monolayer MoS_(2) from 151.79 W·m^(-1)·K^(-1)to 12.19 W·m^(-1)·K^(-1),achieving a high thermal switching ratio of 12.5.The achieved switching ratio significantly surpasses previously reported values,including those achieved by extreme strain methods.This phenomenon mainly arises from the enhanced lattice anharmonicity,which is primarily contributed by the S atoms.These results indicate that hole doping is an effective method for tuning the lattice thermal conductivity of materials,and demonstrate that monolayer MoS_(2) is a potential candidate material for thermal switches.
