Single variable and deposition weight methods were adopted in the experiment. The hafnium crystal bar was fabricated by the iodide process. Influence of hafnium filament temperature（K value）, temperature controlling...Single variable and deposition weight methods were adopted in the experiment. The hafnium crystal bar was fabricated by the iodide process. Influence of hafnium filament temperature（K value）, temperature controlling method, types of feed, and the loading methods on the deposition rate were studied. The results show that the K value, temperature control method, types of feed, and the loading methods have obvious effects on the deposition rate of the hafnium crystal bar. The deposition rate increases with the K value rising in the range of certain temperature;the salt bath controlling temperature method could effectively obtain the better deposition rate; the greater the contact areas of the feeds are, the faster the deposition rate is.So, the optimal iodide deposition techniques of preparing hafnium crystal bar are as follows： hafnium turnings as feed,molybdenum feed retainer charging, salt bath temperature controlling under the higher K value.展开更多
The intercalation of heteroatoms between graphene and metal substrates is a promising method for integrating epitaxial graphene with functional materials.Various elements and their oxides have been successfully interc...The intercalation of heteroatoms between graphene and metal substrates is a promising method for integrating epitaxial graphene with functional materials.Various elements and their oxides have been successfully intercalated into graphene/metal interfaces to form graphene-based heterostructures,showing potential applications in electronic devices.Here we theoretically investigate the hafnium intercalation between graphene and Ir(111).It is found that the penetration barrier of Hf atom is significantly large due to its large atomic radius,which suggests that hafnium intercalation should be carried out with low deposition doses of Hf atoms and high annealing temperatures.Our results show the different intercalation behaviors of a large-size atom and provide guidance for the integration of graphene and hafnium oxide in device applications.展开更多
基金financially supported by the National Technology Support Project of China (No. 2012BAB10B10)China–Russia Corporation Program, Ministry of Science (No.2010DFR50800)
文摘Single variable and deposition weight methods were adopted in the experiment. The hafnium crystal bar was fabricated by the iodide process. Influence of hafnium filament temperature（K value）, temperature controlling method, types of feed, and the loading methods on the deposition rate were studied. The results show that the K value, temperature control method, types of feed, and the loading methods have obvious effects on the deposition rate of the hafnium crystal bar. The deposition rate increases with the K value rising in the range of certain temperature;the salt bath controlling temperature method could effectively obtain the better deposition rate; the greater the contact areas of the feeds are, the faster the deposition rate is.So, the optimal iodide deposition techniques of preparing hafnium crystal bar are as follows： hafnium turnings as feed,molybdenum feed retainer charging, salt bath temperature controlling under the higher K value.
基金Project supported by the National Natural Science Foundation of China(Grant No.61888102)the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDB30000000)the Fundamental Research Funds for the Central Universities,China。
文摘The intercalation of heteroatoms between graphene and metal substrates is a promising method for integrating epitaxial graphene with functional materials.Various elements and their oxides have been successfully intercalated into graphene/metal interfaces to form graphene-based heterostructures,showing potential applications in electronic devices.Here we theoretically investigate the hafnium intercalation between graphene and Ir(111).It is found that the penetration barrier of Hf atom is significantly large due to its large atomic radius,which suggests that hafnium intercalation should be carried out with low deposition doses of Hf atoms and high annealing temperatures.Our results show the different intercalation behaviors of a large-size atom and provide guidance for the integration of graphene and hafnium oxide in device applications.
