β-Ga_(2)O_(3)is a promising candidate for solarblind ultraviolet photodetection owing to its suitable bandgap of approximately 4.9 eV,excellent photoresponse characteristics,and high stability.However,the lack of a s...β-Ga_(2)O_(3)is a promising candidate for solarblind ultraviolet photodetection owing to its suitable bandgap of approximately 4.9 eV,excellent photoresponse characteristics,and high stability.However,the lack of a sufficient driving force within the material leads to extensive bulk charge recombination,limiting its photocurrent and thus posing significant challenges in designing high-performance Ga_(2)O_(3)-based photodetection.In this study,we propose a gradient doping strategy to achieve a Sn-doping concentration gradient along theβ-Ga_(2)O_(3)film thickness.By combining sol-gel synthesis with rapid thermal annealing,a spatially graded band structure with a full-space built-in electric field is constructed,which increases the width of band bending over a large region and is crucial for significantly enhancing carrier separation and transport in the bulk.The resulting gradient Sn-dopedβ-Ga_(2)O_(3)enables exceptional photoelectric performance without an external bias under 254 nm irradiation,including a superior responsivity of 66.88 mA W^(-1),a high detectivity of 8.12×10^(11)Jones,and a fast rise/decay time of 79/65 ms,outstanding most existing similar reported photoelectrochemical(PEC)type optoelectronic devices.Additionally,the device exhibits excellent long-term stability and enables high-resolution underwater ultraviolet imaging.This study demonstrates that the gradient doping strategy provides a feasible approach for enhancing the PEC performance ofβ-Ga_(2)O_(3)photoelectrodes.展开更多
To synergistically recover alumina and alkali from red mud(RM),the structural stability and conversion mechanism of hydroandradite(HA)from hydrogarnet(HG)were investigated via the First-principles,XRF,XRD,PSD and SEM ...To synergistically recover alumina and alkali from red mud(RM),the structural stability and conversion mechanism of hydroandradite(HA)from hydrogarnet(HG)were investigated via the First-principles,XRF,XRD,PSD and SEM methods,and a novel hydrothermal process based on the conversion principle was finally proposed.The crystal structure simulation shows that the HA with varied silicon saturation coefficients is more stable than HG,and the HA with a high iron substitution coefficient is more difficult to be converted from HG.The(110)plane of Fe_(2)O_(3) is easier to combine with HG to form HA,and the binding energy is 81.93 kJ/mol.The effects of raw material ratio,solution concentration and hydrothermal parameters on the conversion from HG to HA were revealed,and the optimal conditions for the alumina recovery were obtained.The recovery efficiencies of alumina and Na_(2)O from the RM are 63.06%and 97.34%,respectively,and the Na_(2)O content in the treated RM is only 0.13%.展开更多
The absence of large-size gallium nitride(GaN) substrates with low dislocation density remains a primary bottleneck for advancing GaN-based devices. Here, we demonstrate the achievement of 8-inch freestanding GaN subs...The absence of large-size gallium nitride(GaN) substrates with low dislocation density remains a primary bottleneck for advancing GaN-based devices. Here, we demonstrate the achievement of 8-inch freestanding GaN substrates grown by hydride vapor phase epitaxy. Critical to this achievement is the improvement in gas-flow uniformity, which ensures exceptional thickness homogeneity and enables the crack-free growth of GaN. After laser lift-off(LLO) separation, the freestanding GaN substrate exhibits superior crystal quality, evidenced by full width at half maximum values of 68 and 54 arcsec for X-ray diffraction rocking curves of(002) and(102) planes, alongside a low dislocation density of 1.6 × 10^(6) cm^(-2). This approach establishes a robust pathway for the production of large-size GaN substrates, which are essential for advancing next-generation power electronics and high-efficiency photonics.展开更多
基金supported by the National Natural Science Foundation of China(12304102,62574029)Natural Science Foundation of Chongqing(CSTB2023NSCQ-MSX0479)+1 种基金Science and Technology Research Project of Chongqing Education Committee(KJQN202400558)Doctoral Scientific Research Fund of Chongqing Normal University(23XLB029)。
文摘β-Ga_(2)O_(3)is a promising candidate for solarblind ultraviolet photodetection owing to its suitable bandgap of approximately 4.9 eV,excellent photoresponse characteristics,and high stability.However,the lack of a sufficient driving force within the material leads to extensive bulk charge recombination,limiting its photocurrent and thus posing significant challenges in designing high-performance Ga_(2)O_(3)-based photodetection.In this study,we propose a gradient doping strategy to achieve a Sn-doping concentration gradient along theβ-Ga_(2)O_(3)film thickness.By combining sol-gel synthesis with rapid thermal annealing,a spatially graded band structure with a full-space built-in electric field is constructed,which increases the width of band bending over a large region and is crucial for significantly enhancing carrier separation and transport in the bulk.The resulting gradient Sn-dopedβ-Ga_(2)O_(3)enables exceptional photoelectric performance without an external bias under 254 nm irradiation,including a superior responsivity of 66.88 mA W^(-1),a high detectivity of 8.12×10^(11)Jones,and a fast rise/decay time of 79/65 ms,outstanding most existing similar reported photoelectrochemical(PEC)type optoelectronic devices.Additionally,the device exhibits excellent long-term stability and enables high-resolution underwater ultraviolet imaging.This study demonstrates that the gradient doping strategy provides a feasible approach for enhancing the PEC performance ofβ-Ga_(2)O_(3)photoelectrodes.
基金the financial support from the National Key R&D Program of China(No.2022YFC2904405)the National Natural Science Foundation of China(Nos.22078055,51774079)。
文摘To synergistically recover alumina and alkali from red mud(RM),the structural stability and conversion mechanism of hydroandradite(HA)from hydrogarnet(HG)were investigated via the First-principles,XRF,XRD,PSD and SEM methods,and a novel hydrothermal process based on the conversion principle was finally proposed.The crystal structure simulation shows that the HA with varied silicon saturation coefficients is more stable than HG,and the HA with a high iron substitution coefficient is more difficult to be converted from HG.The(110)plane of Fe_(2)O_(3) is easier to combine with HG to form HA,and the binding energy is 81.93 kJ/mol.The effects of raw material ratio,solution concentration and hydrothermal parameters on the conversion from HG to HA were revealed,and the optimal conditions for the alumina recovery were obtained.The recovery efficiencies of alumina and Na_(2)O from the RM are 63.06%and 97.34%,respectively,and the Na_(2)O content in the treated RM is only 0.13%.
基金supported by the National Key Research and Development Program of China (Nos. 2022YFB3605203 and 2022YFB3608100)the National Natural Science Foundation of China (Nos. 62321004, 62227817, and 62374001)。
文摘The absence of large-size gallium nitride(GaN) substrates with low dislocation density remains a primary bottleneck for advancing GaN-based devices. Here, we demonstrate the achievement of 8-inch freestanding GaN substrates grown by hydride vapor phase epitaxy. Critical to this achievement is the improvement in gas-flow uniformity, which ensures exceptional thickness homogeneity and enables the crack-free growth of GaN. After laser lift-off(LLO) separation, the freestanding GaN substrate exhibits superior crystal quality, evidenced by full width at half maximum values of 68 and 54 arcsec for X-ray diffraction rocking curves of(002) and(102) planes, alongside a low dislocation density of 1.6 × 10^(6) cm^(-2). This approach establishes a robust pathway for the production of large-size GaN substrates, which are essential for advancing next-generation power electronics and high-efficiency photonics.
