Photonic neural networks have garnered significant attention in recent years due to their ultra-high computational speed,broad bandwidth,and parallel processing capabilities.However,compared to conventional electronic...Photonic neural networks have garnered significant attention in recent years due to their ultra-high computational speed,broad bandwidth,and parallel processing capabilities.However,compared to conventional electronic nonlinear activa-tion function(NAF),progress on efficient and easily implementable optical nonlinear activation function(ONAF)was barely reported.To address this issue,we proposed a programmable,low-loss ONAF device based on a silicon micro-ring resonator capped with the Antimony selenide(Sb_(2)Se_(3))thin films,and with indium tin oxide(ITO)used as the microheater.Leveraging our self-developed phase-transformation kinetic and optical models,we successfully simulated the phase-transition behavior of Sb_(2)Se_(3)and three different ONAFs—ELU,ReLU,and radial basis function(RBF)were achieved according to discernible optical responses of proposed devices under different phase-change extents.Classification results from the Fashion MNIST dataset demonstrated that these ONAFs can be considered as appropriate substitutes for traditional NAF.This indicated the bright prospect of the proposed device for nonlinear activation function in future photonic neural networks.展开更多
The optical soliton characteristics of GaSb-based~2μm wavelength integrated optical chips have broad application prospects in optoelectronic fields such as optical communications,infrared countermeasures,and gas envi...The optical soliton characteristics of GaSb-based~2μm wavelength integrated optical chips have broad application prospects in optoelectronic fields such as optical communications,infrared countermeasures,and gas environment monitoring.In the research of two-section integrated optical chips,more attention is paid to their passive mode-locked characteristics.The ability of its structure to generate stable soliton transmission has not yet been studied,which will limit its further application in high-performance near-mid infrared optoelectronic technology.In this paper,we design and prepare a GaSb-based~2μm wave-length two-section integrated semiconductor laser chip structure,and test and analyze its related properties of soliton,includ-ing power−injection current−voltage(P−I−V),temperature and mode-locked characteristics.Experimental results show that the chip can achieve stable mode-locked operation at nearly~2μm wavelength and present the working characteristics of near opti-cal soliton states and multi-peak optical soliton states.By comparing and analyzing the measured optical pulse sequence curve with the numerical fitting based on the pure fourth order soliton approximation solution,it is confirmed that the two-section integrated optical chip structure can generate stable transmission of multi-peak optical soliton.This provides a research direc-tion for developing near-mid infrared mode-locked integrated optical chips with high-performance property of optical soliton.展开更多
With the explosive development of artificial intelligence(AI),machine learning(ML),and high-performance comput-ing(HPC),the ever-growing data movement is asking for high density interconnects with higher bandwidth(BW)...With the explosive development of artificial intelligence(AI),machine learning(ML),and high-performance comput-ing(HPC),the ever-growing data movement is asking for high density interconnects with higher bandwidth(BW),lower power and lower latency[1−3].The optical I/O leverages silicon photonic(SiPh)technology to enable high-density large-scale integrated photonics.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.62104114,62404111)Natural Science Foundation of Jiangsu Province(Grant Nos.BK20240635,BZ2021031)+4 种基金Opening Project of Advanced Integrated Circuit Package and Testing Research Center of Jiangsu Province(Grant No.NTIKFJJ202303)Natural Science Foundation of the Jiangsu Higher Education Institutions of China(Grant No.24KJB510025)Natural Science Research Start-up Foundation of Recruiting Talents of Nanjing University of Posts and Telecommunications(Grant Nos.NY223157,NY223156)Natural Science Foundation of Nanjing University of Posts and Telecommunications(Grant No.NY224140)Project funded by China Postdoctoral Science Foundation(Grant No.2023M732916).
文摘Photonic neural networks have garnered significant attention in recent years due to their ultra-high computational speed,broad bandwidth,and parallel processing capabilities.However,compared to conventional electronic nonlinear activa-tion function(NAF),progress on efficient and easily implementable optical nonlinear activation function(ONAF)was barely reported.To address this issue,we proposed a programmable,low-loss ONAF device based on a silicon micro-ring resonator capped with the Antimony selenide(Sb_(2)Se_(3))thin films,and with indium tin oxide(ITO)used as the microheater.Leveraging our self-developed phase-transformation kinetic and optical models,we successfully simulated the phase-transition behavior of Sb_(2)Se_(3)and three different ONAFs—ELU,ReLU,and radial basis function(RBF)were achieved according to discernible optical responses of proposed devices under different phase-change extents.Classification results from the Fashion MNIST dataset demonstrated that these ONAFs can be considered as appropriate substitutes for traditional NAF.This indicated the bright prospect of the proposed device for nonlinear activation function in future photonic neural networks.
基金the National Natural Science Foundation of China(Grant Nos.62274048,62464006,62174046)the Ministry of Education,Singapore(Grant No.MOE-T2EP50121-0005)+1 种基金Hainan Province Science and Technology Special Fund(Grant No.ZDYF2025GXJS007)National Key R&D Program of China(Grant No.2023YFF0722400).
文摘The optical soliton characteristics of GaSb-based~2μm wavelength integrated optical chips have broad application prospects in optoelectronic fields such as optical communications,infrared countermeasures,and gas environment monitoring.In the research of two-section integrated optical chips,more attention is paid to their passive mode-locked characteristics.The ability of its structure to generate stable soliton transmission has not yet been studied,which will limit its further application in high-performance near-mid infrared optoelectronic technology.In this paper,we design and prepare a GaSb-based~2μm wave-length two-section integrated semiconductor laser chip structure,and test and analyze its related properties of soliton,includ-ing power−injection current−voltage(P−I−V),temperature and mode-locked characteristics.Experimental results show that the chip can achieve stable mode-locked operation at nearly~2μm wavelength and present the working characteristics of near opti-cal soliton states and multi-peak optical soliton states.By comparing and analyzing the measured optical pulse sequence curve with the numerical fitting based on the pure fourth order soliton approximation solution,it is confirmed that the two-section integrated optical chip structure can generate stable transmission of multi-peak optical soliton.This provides a research direc-tion for developing near-mid infrared mode-locked integrated optical chips with high-performance property of optical soliton.
基金This work was supported by the National Natural Science Foundation of China(Grant Nos.61925505,92373209 and 62235017).
文摘With the explosive development of artificial intelligence(AI),machine learning(ML),and high-performance comput-ing(HPC),the ever-growing data movement is asking for high density interconnects with higher bandwidth(BW),lower power and lower latency[1−3].The optical I/O leverages silicon photonic(SiPh)technology to enable high-density large-scale integrated photonics.
