To improve the theoretical prediction accuracy of static mechanical quantities in MEMS cantilever beams for microwave power detection chips,a distributed static model is proposed based on the deflection equation.An an...To improve the theoretical prediction accuracy of static mechanical quantities in MEMS cantilever beams for microwave power detection chips,a distributed static model is proposed based on the deflection equation.An analytical frame-work is established through the precise characterization of cantilever beam bending.The framework can accurately extract key electromechanical parameters,and the correlation between these parameters and geometric changes is systematically studied.Results show that the pull-in voltage increases with the gap but decreases with the length.The predicted pull-in voltage indi-cates a relative error of only 6.5%between the distributed static model and the simulation,which is significantly lower than that of the other two models.The overload power and sensitivity are also analyzed to facilitate performance trade-offs in chip design.The measured return loss varies between-66.46 and-10.56 dB over the 8-12 GHz frequency band,exhibiting a charac-teristic V-shaped trend.Moreover,the measured sensitivity of 66.5 fF/W closely matches the theoretical value of 69.3 fF/W,show-ing a relative error of 5.6%.These findings confirm that the distributed model outperforms the other two in terms of both accu-racy and physical realism,thereby providing important reference for the design of microwave power detection chips.展开更多
基金supported by the National Natural Science Foundation of China(61904089)the Province Natural Science Foundation of Jiangsu(BK20190731).
文摘To improve the theoretical prediction accuracy of static mechanical quantities in MEMS cantilever beams for microwave power detection chips,a distributed static model is proposed based on the deflection equation.An analytical frame-work is established through the precise characterization of cantilever beam bending.The framework can accurately extract key electromechanical parameters,and the correlation between these parameters and geometric changes is systematically studied.Results show that the pull-in voltage increases with the gap but decreases with the length.The predicted pull-in voltage indi-cates a relative error of only 6.5%between the distributed static model and the simulation,which is significantly lower than that of the other two models.The overload power and sensitivity are also analyzed to facilitate performance trade-offs in chip design.The measured return loss varies between-66.46 and-10.56 dB over the 8-12 GHz frequency band,exhibiting a charac-teristic V-shaped trend.Moreover,the measured sensitivity of 66.5 fF/W closely matches the theoretical value of 69.3 fF/W,show-ing a relative error of 5.6%.These findings confirm that the distributed model outperforms the other two in terms of both accu-racy and physical realism,thereby providing important reference for the design of microwave power detection chips.
