October 25-27(Fri-Sun),2024 Hangzhou杭州,Hangzhou,China Call for Papers The 7th IEEE International Conference on Integrated Circuits,Technologies and Applications(ICTA 2024),will be held on October 25-27,2024 in Hangz...October 25-27(Fri-Sun),2024 Hangzhou杭州,Hangzhou,China Call for Papers The 7th IEEE International Conference on Integrated Circuits,Technologies and Applications(ICTA 2024),will be held on October 25-27,2024 in Hangzhou,China.This conference will be held in China to provide an international forum according to IEEE standard for the presentation and exchange of the latest technical achievements and cross-discipline fertilization of IC designs,technologies,and applications in our fast-changing society.This year's theme is“Chiplet and Future IDM”.展开更多
1.栅氧化击穿对RF器件和电路性能的影响(Ef-fect of Gate Oxide Breakdown on RF Device and Cir-cuit Performance)——2003 International ReliabilityPhysics Symposium pp.1-4. 研究了0.16μm NMOS器件由于栅氧化击穿而造成的S参数...1.栅氧化击穿对RF器件和电路性能的影响(Ef-fect of Gate Oxide Breakdown on RF Device and Cir-cuit Performance)——2003 International ReliabilityPhysics Symposium pp.1-4. 研究了0.16μm NMOS器件由于栅氧化击穿而造成的S参数退化情况,提出了栅氧化击穿后MOSFET的等效电路模型。用等效电路模型研究了nMOSFET击穿对低噪声放大器性能的影响。根据具体击穿的器件和击穿指状元件的数量,尽管S参数和噪声指数的性能大幅度退化,但仍然有非零概率电路会继续工作。展开更多
第十四届IEEE固态和集成电路国际会议（IEEE ICSICT-International Conference on Solid-State and Integrated Circuit Technology）将于2018年10月31日至11月3日在青岛召开,本次会议由IEEE北京分会和复旦大学主办,并受到了IEEE EDS及S...第十四届IEEE固态和集成电路国际会议（IEEE ICSICT-International Conference on Solid-State and Integrated Circuit Technology）将于2018年10月31日至11月3日在青岛召开,本次会议由IEEE北京分会和复旦大学主办,并受到了IEEE EDS及SSCS学会、IET、CIE等国内外多家学术组织的支持。展开更多
文摘October 25-27(Fri-Sun),2024 Hangzhou杭州,Hangzhou,China Call for Papers The 7th IEEE International Conference on Integrated Circuits,Technologies and Applications(ICTA 2024),will be held on October 25-27,2024 in Hangzhou,China.This conference will be held in China to provide an international forum according to IEEE standard for the presentation and exchange of the latest technical achievements and cross-discipline fertilization of IC designs,technologies,and applications in our fast-changing society.This year's theme is“Chiplet and Future IDM”.
文摘1.栅氧化击穿对RF器件和电路性能的影响(Ef-fect of Gate Oxide Breakdown on RF Device and Cir-cuit Performance)——2003 International ReliabilityPhysics Symposium pp.1-4. 研究了0.16μm NMOS器件由于栅氧化击穿而造成的S参数退化情况,提出了栅氧化击穿后MOSFET的等效电路模型。用等效电路模型研究了nMOSFET击穿对低噪声放大器性能的影响。根据具体击穿的器件和击穿指状元件的数量,尽管S参数和噪声指数的性能大幅度退化,但仍然有非零概率电路会继续工作。
文摘第十四届IEEE固态和集成电路国际会议（IEEE ICSICT-International Conference on Solid-State and Integrated Circuit Technology）将于2018年10月31日至11月3日在青岛召开,本次会议由IEEE北京分会和复旦大学主办,并受到了IEEE EDS及SSCS学会、IET、CIE等国内外多家学术组织的支持。
