金属氧化物薄膜晶体管(Metal oxide thin film transistors,MOTFTs)因其具有较高的载流子迁移率和较好的电学稳定性,在大尺寸发光显示驱动背板应用方面极具潜力。此外,MOTFTs与非晶硅薄膜晶体管的制备工艺兼容,制造成本较低,具有较大市...金属氧化物薄膜晶体管(Metal oxide thin film transistors,MOTFTs)因其具有较高的载流子迁移率和较好的电学稳定性,在大尺寸发光显示驱动背板应用方面极具潜力。此外,MOTFTs与非晶硅薄膜晶体管的制备工艺兼容,制造成本较低,具有较大市场竞争优势。然而,衡量MOTFTs性能的两个关键指标——迁移率和稳定性之间的矛盾限制了其高端显示应用。因此,开发高迁移率兼具高稳定性的MOTFTs成为研究热点和产业竞争焦点。大量研究表明,稀土掺杂氧化物有源半导体材料体系有望实现这一目标。本文重点综述兼具高迁移率和高稳定性的稀土掺杂氧化物材料设计及MOTFTs已达到的性能,探讨稀土掺杂金属氧化物薄膜晶体管(RE-MOTFTs)面临的挑战和发展潜力。展开更多
The evolution of display backplane technologies has been driven by the relentless pursuit of higher form factor and superior performance coupled with lower power consumption.Current state-of-the-art backplane technolo...The evolution of display backplane technologies has been driven by the relentless pursuit of higher form factor and superior performance coupled with lower power consumption.Current state-of-the-art backplane technologies based on amorphous Si,poly Si,and IGZO,face challenges in meeting the requirements of next-generation displays,including larger dimensions,higher refresh rates,increased pixel density,greater brightness,and reduced power consumption.In this context,2D chalcogenides have emerged as promising candidates for thin-film transistors(TFTs)in display backplanes,offering advantages such as high mobility,low leakage current,mechanical robustness,and transparency.This comprehensive review explores the significance of 2D chalcogenides as materials for TFTs in next-generation display backplanes.We delve into the structural characteristics,electronic properties,and synthesis methods of 2D chalcogenides,emphasizing scalable growth strategies that are relevant to large-area display backplanes.Additionally,we discuss mechanical flexibility and strain engineering,crucial for the development of flexible displays.Performance enhancement strategies for 2D chalcogenide TFTs have been explored encompassing techniques in device engineering and geometry optimization,while considering scaling over a large area.Active-matrix implementation of 2D TFTs in various applications is also explored,benchmarking device performance on a large scale which is a necessary aspect of TFTs used in display backplanes.Furthermore,the latest development on the integration of 2D chalcogenide TFTs with different display technologies,such as OLED,quantum dot,and MicroLED displays has been reviewed in detail.Finally,challenges and opportunities in the field are discussed with a brief insight into emerging trends and research directions.展开更多
As organic thin film transistors(OTFTs)are set to play a crucial role in flexible and cost-effective electronic applica-tions,this paper investigates a high-mobility 6,13-bis(triisopropylsilylethynyl)pentacene(TIPS-pe...As organic thin film transistors(OTFTs)are set to play a crucial role in flexible and cost-effective electronic applica-tions,this paper investigates a high-mobility 6,13-bis(triisopropylsilylethynyl)pentacene(TIPS-pentacene)OTFT for use in flexi-ble electronics.The development of such high-mobility devices necessitates precise device modeling to support technology opti-misation and circuit design.The details of numerical simulation technique is discussed,in which,the electrical behavior of the device is well captured by fine tuning basic semiconductor equations.This technology computer-aided design(TCAD)has been validated with exprimental data.In addition,we have discussed about compact model fitting of the devices as well as parameter extraction procedure employed.This includes verification of Silvaco ATLAS finite element method(FEM)based results against experimental data gained from fabricated OTFT devices.Simulations for p-type TFT-based inverter are also per-formed to assess the performance of compact model in simple circuit simulation.展开更多
In this work,the incorporation of tantalum(Ta)into p-type metal-oxide(SnO_(x))semiconductor film is investigated to improve the electrical characteristics and suppress the fringe effect of thin film transistors(TFTs)....In this work,the incorporation of tantalum(Ta)into p-type metal-oxide(SnO_(x))semiconductor film is investigated to improve the electrical characteristics and suppress the fringe effect of thin film transistors(TFTs).The Ta-doped SnO_(x)(SnO_(x):Ta)film is deposited by radio-frequency(RF)magnetron sputtering with a Sn:Ta(3 at.%)target and thermally annealed at 270℃ for 30 min.Here,we observe that the SnO_(x):Ta film presents increased crystallinity,reduced defect density(3.25×10^(12)cm^(−2)·eV^(−1)),and widened bandgap(1.98 eV),in comparison with the undoped SnO_(x)film.As a result,the SnO_(x):Ta TFTs exhibit a lower off-state current(Ioff),an improved on/off current ratio(2.17×10^(4)),a remarkably decreased subthreshold swing(SS)by 41%,and enhanced device stability.Additionally,by introducing Ta dopants,the fringe effect as well as the impact of channel width-to-length ratio(W/L)on electrical performances of the p-type oxide TFTs can be effectively suppressed.These results shall contribute to further exploration and development of p-type SnO_(x)TFTs.展开更多
氧化物TFT(Thin Film Transistor)源漏极短路(Gate Data Short,DGS)缺陷导致显示品质恶化和产品报废,明确DGS原理、识别影响因素并输出解决方案对确保产品良率和品质具有积极意义。本文首先确认了DGS宏观现象和微观形貌,随后探究了栅极...氧化物TFT(Thin Film Transistor)源漏极短路(Gate Data Short,DGS)缺陷导致显示品质恶化和产品报废,明确DGS原理、识别影响因素并输出解决方案对确保产品良率和品质具有积极意义。本文首先确认了DGS宏观现象和微观形貌,随后探究了栅极绝缘层(Gate Insulator,GI)介电损耗和耐压强度的关系,统计了不同产品在点灯恶化实验中的DGS发生率,明确了产品栅极电压、刷新率对DGS的影响。将实验现象和调研的DGS机理匹配,分析了氧化物TFT DGS高于非晶硅TFT的原因。结果表明,DGS的本质是栅极绝缘层耐压强度不足而导致的GI介电击穿,GI介电损耗、栅压和刷新率均是影响DGS的显著因子。这些因子在Cu扩散、Cu电迁移机理的相互作用下,降低了GI有效厚度,增加了GI热击穿风险,最终造成了DGS。产线可行的DGS抑制措施有两种:降低叠层GI的SiO_(x)厚度比例,减少叠层栅极绝缘层介电损耗,抑制热击穿;下调TFT栅压,抑制Cu离子扩散和电迁移。将上述措施作为改善方案进行实验测试,面板DGS发生率下降73%。该方案成功抑制了氧化物面板DGS发生率,提升了产品品质,为氧化物TFT制程优化提供了参考。展开更多
文摘金属氧化物薄膜晶体管(Metal oxide thin film transistors,MOTFTs)因其具有较高的载流子迁移率和较好的电学稳定性,在大尺寸发光显示驱动背板应用方面极具潜力。此外,MOTFTs与非晶硅薄膜晶体管的制备工艺兼容,制造成本较低,具有较大市场竞争优势。然而,衡量MOTFTs性能的两个关键指标——迁移率和稳定性之间的矛盾限制了其高端显示应用。因此,开发高迁移率兼具高稳定性的MOTFTs成为研究热点和产业竞争焦点。大量研究表明,稀土掺杂氧化物有源半导体材料体系有望实现这一目标。本文重点综述兼具高迁移率和高稳定性的稀土掺杂氧化物材料设计及MOTFTs已达到的性能,探讨稀土掺杂金属氧化物薄膜晶体管(RE-MOTFTs)面临的挑战和发展潜力。
基金supported in part by the National Research Foundation of Korea Grant Number:RS-2024-00448809National Research Foundation of Korea Grant Number:RS-2025-00517255+1 种基金National Research Foundation of Korea Grant Number:No.2021M3H4A1A02056037supported by Basic Science Research Program through the National Research Foundation of Korean(NRF)funded by the Ministry of Education(2020R1A6A1A03040516).
文摘The evolution of display backplane technologies has been driven by the relentless pursuit of higher form factor and superior performance coupled with lower power consumption.Current state-of-the-art backplane technologies based on amorphous Si,poly Si,and IGZO,face challenges in meeting the requirements of next-generation displays,including larger dimensions,higher refresh rates,increased pixel density,greater brightness,and reduced power consumption.In this context,2D chalcogenides have emerged as promising candidates for thin-film transistors(TFTs)in display backplanes,offering advantages such as high mobility,low leakage current,mechanical robustness,and transparency.This comprehensive review explores the significance of 2D chalcogenides as materials for TFTs in next-generation display backplanes.We delve into the structural characteristics,electronic properties,and synthesis methods of 2D chalcogenides,emphasizing scalable growth strategies that are relevant to large-area display backplanes.Additionally,we discuss mechanical flexibility and strain engineering,crucial for the development of flexible displays.Performance enhancement strategies for 2D chalcogenide TFTs have been explored encompassing techniques in device engineering and geometry optimization,while considering scaling over a large area.Active-matrix implementation of 2D TFTs in various applications is also explored,benchmarking device performance on a large scale which is a necessary aspect of TFTs used in display backplanes.Furthermore,the latest development on the integration of 2D chalcogenide TFTs with different display technologies,such as OLED,quantum dot,and MicroLED displays has been reviewed in detail.Finally,challenges and opportunities in the field are discussed with a brief insight into emerging trends and research directions.
基金The DST government of India is appreciated by the researchers for giving them the early career research grant under the project ECR/2017/000179。
文摘As organic thin film transistors(OTFTs)are set to play a crucial role in flexible and cost-effective electronic applica-tions,this paper investigates a high-mobility 6,13-bis(triisopropylsilylethynyl)pentacene(TIPS-pentacene)OTFT for use in flexi-ble electronics.The development of such high-mobility devices necessitates precise device modeling to support technology opti-misation and circuit design.The details of numerical simulation technique is discussed,in which,the electrical behavior of the device is well captured by fine tuning basic semiconductor equations.This technology computer-aided design(TCAD)has been validated with exprimental data.In addition,we have discussed about compact model fitting of the devices as well as parameter extraction procedure employed.This includes verification of Silvaco ATLAS finite element method(FEM)based results against experimental data gained from fabricated OTFT devices.Simulations for p-type TFT-based inverter are also per-formed to assess the performance of compact model in simple circuit simulation.
基金supported in part by National Key R&D Program of China(Grant No.2022YFE0141500)National Natural Science Foundation of China(Grant Nos.62004065 and 62274059).
文摘In this work,the incorporation of tantalum(Ta)into p-type metal-oxide(SnO_(x))semiconductor film is investigated to improve the electrical characteristics and suppress the fringe effect of thin film transistors(TFTs).The Ta-doped SnO_(x)(SnO_(x):Ta)film is deposited by radio-frequency(RF)magnetron sputtering with a Sn:Ta(3 at.%)target and thermally annealed at 270℃ for 30 min.Here,we observe that the SnO_(x):Ta film presents increased crystallinity,reduced defect density(3.25×10^(12)cm^(−2)·eV^(−1)),and widened bandgap(1.98 eV),in comparison with the undoped SnO_(x)film.As a result,the SnO_(x):Ta TFTs exhibit a lower off-state current(Ioff),an improved on/off current ratio(2.17×10^(4)),a remarkably decreased subthreshold swing(SS)by 41%,and enhanced device stability.Additionally,by introducing Ta dopants,the fringe effect as well as the impact of channel width-to-length ratio(W/L)on electrical performances of the p-type oxide TFTs can be effectively suppressed.These results shall contribute to further exploration and development of p-type SnO_(x)TFTs.
文摘氧化物TFT(Thin Film Transistor)源漏极短路(Gate Data Short,DGS)缺陷导致显示品质恶化和产品报废,明确DGS原理、识别影响因素并输出解决方案对确保产品良率和品质具有积极意义。本文首先确认了DGS宏观现象和微观形貌,随后探究了栅极绝缘层(Gate Insulator,GI)介电损耗和耐压强度的关系,统计了不同产品在点灯恶化实验中的DGS发生率,明确了产品栅极电压、刷新率对DGS的影响。将实验现象和调研的DGS机理匹配,分析了氧化物TFT DGS高于非晶硅TFT的原因。结果表明,DGS的本质是栅极绝缘层耐压强度不足而导致的GI介电击穿,GI介电损耗、栅压和刷新率均是影响DGS的显著因子。这些因子在Cu扩散、Cu电迁移机理的相互作用下,降低了GI有效厚度,增加了GI热击穿风险,最终造成了DGS。产线可行的DGS抑制措施有两种:降低叠层GI的SiO_(x)厚度比例,减少叠层栅极绝缘层介电损耗,抑制热击穿;下调TFT栅压,抑制Cu离子扩散和电迁移。将上述措施作为改善方案进行实验测试,面板DGS发生率下降73%。该方案成功抑制了氧化物面板DGS发生率,提升了产品品质,为氧化物TFT制程优化提供了参考。
