Organic electrochemical transistor(OECT)devices demonstrate great promising potential for reservoir computing(RC)systems,but their lack of tunable dynamic characteristics limits their application in multi-temporal sca...Organic electrochemical transistor(OECT)devices demonstrate great promising potential for reservoir computing(RC)systems,but their lack of tunable dynamic characteristics limits their application in multi-temporal scale tasks.In this study,we report an OECT-based neuromorphic device with tunable relaxation time(τ)by introducing an additional vertical back-gate electrode into a planar structure.The dual-gate design enablesτreconfiguration from 93 to 541 ms.The tunable relaxation behaviors can be attributed to the combined effects of planar-gate induced electrochemical doping and back-gateinduced electrostatic coupling,as verified by electrochemical impedance spectroscopy analysis.Furthermore,we used theτ-tunable OECT devices as physical reservoirs in the RC system for intelligent driving trajectory prediction,achieving a significant improvement in prediction accuracy from below 69%to 99%.The results demonstrate that theτ-tunable OECT shows a promising candidate for multi-temporal scale neuromorphic computing applications.展开更多
Doping in thin-film transistors(TFTs) plays a crucial role in tailoring material properties to enhance device performance, making them essential for advanced electronic applications. This study explores the synthesis ...Doping in thin-film transistors(TFTs) plays a crucial role in tailoring material properties to enhance device performance, making them essential for advanced electronic applications. This study explores the synthesis and characterization of TFTs fabricated using nickel(Ni)-doped indium oxide(In_(2)O_(3)) via a wet-chemical approach. The presented work investigates the effect of "Ni" incorporation in In_(2)O_(3) on the structural and electrical transport properties of In_(2)O_(3), revealing that higher "Ni" content decreases the oxygen vacancies, leading to a reduction in leakage current and a forward shift in threshold potential(V_(th)).Experimental findings reveal that Ni In O-based TFTs(with Ni = 0.5%) showcase enhanced electrical performance, achieving mobility of 7.54 cm^(2)/(V·s), an impressive ON/OFF current ratio of ~10^(7), a V_(th) of 6.26 V, reduced interfacial trap states(D_(it)) of 8.23 ×10^(12) cm^(-2) and enhanced biased stress stability. The efficacy of "Ni" incorporation is attributed to the upgraded Lewis acidity, stable Ni-O bond strength, and small ionic radius of Ni. Negative bias illumination stability(NBIS) measurements further indicate that device stability diminishes with shorter light wavelengths, likely due to the activation of oxygen vacancies. These findings validate the solution-processed techniques' potential for future large-scale, low-cost, energy-efficient, and high-performance electronics.展开更多
In this work,we demonstrated the InSnO(ITO)TFTs passivated with SiO_(2)via the PECVD process compatible with large-area production for the first time.The passivated ITO TFTs with various channel thicknesses(t_(ch)=4,5...In this work,we demonstrated the InSnO(ITO)TFTs passivated with SiO_(2)via the PECVD process compatible with large-area production for the first time.The passivated ITO TFTs with various channel thicknesses(t_(ch)=4,5,6 nm)exhibit excellent electrical performance and superior uniformity.The reliability properties of ITO TFTs were evaluated in detail under positive bias stress(PBS)conditions before and after passivation.Compared to the devices without passivation,the passivated devices have only 50%threshold voltage degradation(ΔV_(th))and 50%newly generated traps due to excellent isolation of the ambient atmosphere.The negligible performance degradation of ITO TFTs with passivation during negative bias stress(NBS)and negative bias temperature stress(NBTS)verifies the outstanding immunity to the water vapor of the SiO_(2)passivation layer.Overall,the ITO TFT with the t_(ch)of 6 nm and with SiO_(2)passivation exhibits the best performance in terms of electrical properties,uniformity,and reliability,which is promising in large-area production.展开更多
金属氧化物薄膜晶体管(Metal oxide thin film transistors,MOTFTs)因其具有较高的载流子迁移率和较好的电学稳定性,在大尺寸发光显示驱动背板应用方面极具潜力。此外,MOTFTs与非晶硅薄膜晶体管的制备工艺兼容,制造成本较低,具有较大市...金属氧化物薄膜晶体管(Metal oxide thin film transistors,MOTFTs)因其具有较高的载流子迁移率和较好的电学稳定性,在大尺寸发光显示驱动背板应用方面极具潜力。此外,MOTFTs与非晶硅薄膜晶体管的制备工艺兼容,制造成本较低,具有较大市场竞争优势。然而,衡量MOTFTs性能的两个关键指标——迁移率和稳定性之间的矛盾限制了其高端显示应用。因此,开发高迁移率兼具高稳定性的MOTFTs成为研究热点和产业竞争焦点。大量研究表明,稀土掺杂氧化物有源半导体材料体系有望实现这一目标。本文重点综述兼具高迁移率和高稳定性的稀土掺杂氧化物材料设计及MOTFTs已达到的性能,探讨稀土掺杂金属氧化物薄膜晶体管(RE-MOTFTs)面临的挑战和发展潜力。展开更多
基金supported by the National Key Research and Development Program of China under Grant 2022YFB3608300in part by the National Nature Science Foundation of China(NSFC)under Grants 62404050,U2341218,62574056,62204052。
文摘Organic electrochemical transistor(OECT)devices demonstrate great promising potential for reservoir computing(RC)systems,but their lack of tunable dynamic characteristics limits their application in multi-temporal scale tasks.In this study,we report an OECT-based neuromorphic device with tunable relaxation time(τ)by introducing an additional vertical back-gate electrode into a planar structure.The dual-gate design enablesτreconfiguration from 93 to 541 ms.The tunable relaxation behaviors can be attributed to the combined effects of planar-gate induced electrochemical doping and back-gateinduced electrostatic coupling,as verified by electrochemical impedance spectroscopy analysis.Furthermore,we used theτ-tunable OECT devices as physical reservoirs in the RC system for intelligent driving trajectory prediction,achieving a significant improvement in prediction accuracy from below 69%to 99%.The results demonstrate that theτ-tunable OECT shows a promising candidate for multi-temporal scale neuromorphic computing applications.
基金funded by the research startup funding of National Research Foundation (NRF) of Korea through the Ministry of Science and ICT 2022R1G1A1009887Part of this study was supported by research start-up funding of Anhui University (S202418001/078)。
文摘Doping in thin-film transistors(TFTs) plays a crucial role in tailoring material properties to enhance device performance, making them essential for advanced electronic applications. This study explores the synthesis and characterization of TFTs fabricated using nickel(Ni)-doped indium oxide(In_(2)O_(3)) via a wet-chemical approach. The presented work investigates the effect of "Ni" incorporation in In_(2)O_(3) on the structural and electrical transport properties of In_(2)O_(3), revealing that higher "Ni" content decreases the oxygen vacancies, leading to a reduction in leakage current and a forward shift in threshold potential(V_(th)).Experimental findings reveal that Ni In O-based TFTs(with Ni = 0.5%) showcase enhanced electrical performance, achieving mobility of 7.54 cm^(2)/(V·s), an impressive ON/OFF current ratio of ~10^(7), a V_(th) of 6.26 V, reduced interfacial trap states(D_(it)) of 8.23 ×10^(12) cm^(-2) and enhanced biased stress stability. The efficacy of "Ni" incorporation is attributed to the upgraded Lewis acidity, stable Ni-O bond strength, and small ionic radius of Ni. Negative bias illumination stability(NBIS) measurements further indicate that device stability diminishes with shorter light wavelengths, likely due to the activation of oxygen vacancies. These findings validate the solution-processed techniques' potential for future large-scale, low-cost, energy-efficient, and high-performance electronics.
基金supported in part by the National Natural Science Foundation of China(62404110,62274033)Natural Science Foundation of Jiangsu Province(BK20221453)+1 种基金Fundamental Research Funds for the Central UniversitiesNatural Science Research Start-up Foundation of Recruiting Talents of Nanjing University of Posts and Telecommunications(NY223159)。
文摘In this work,we demonstrated the InSnO(ITO)TFTs passivated with SiO_(2)via the PECVD process compatible with large-area production for the first time.The passivated ITO TFTs with various channel thicknesses(t_(ch)=4,5,6 nm)exhibit excellent electrical performance and superior uniformity.The reliability properties of ITO TFTs were evaluated in detail under positive bias stress(PBS)conditions before and after passivation.Compared to the devices without passivation,the passivated devices have only 50%threshold voltage degradation(ΔV_(th))and 50%newly generated traps due to excellent isolation of the ambient atmosphere.The negligible performance degradation of ITO TFTs with passivation during negative bias stress(NBS)and negative bias temperature stress(NBTS)verifies the outstanding immunity to the water vapor of the SiO_(2)passivation layer.Overall,the ITO TFT with the t_(ch)of 6 nm and with SiO_(2)passivation exhibits the best performance in terms of electrical properties,uniformity,and reliability,which is promising in large-area production.
文摘金属氧化物薄膜晶体管(Metal oxide thin film transistors,MOTFTs)因其具有较高的载流子迁移率和较好的电学稳定性,在大尺寸发光显示驱动背板应用方面极具潜力。此外,MOTFTs与非晶硅薄膜晶体管的制备工艺兼容,制造成本较低,具有较大市场竞争优势。然而,衡量MOTFTs性能的两个关键指标——迁移率和稳定性之间的矛盾限制了其高端显示应用。因此,开发高迁移率兼具高稳定性的MOTFTs成为研究热点和产业竞争焦点。大量研究表明,稀土掺杂氧化物有源半导体材料体系有望实现这一目标。本文重点综述兼具高迁移率和高稳定性的稀土掺杂氧化物材料设计及MOTFTs已达到的性能,探讨稀土掺杂金属氧化物薄膜晶体管(RE-MOTFTs)面临的挑战和发展潜力。
