In this paper, a novel A1GaN/GaN HEMT with a Schottky drain and a compound field plate （SD-CFP HEMT） is presented for the purpose of better reverse blocking capability. The compound field plate （CFP） consists of a...In this paper, a novel A1GaN/GaN HEMT with a Schottky drain and a compound field plate （SD-CFP HEMT） is presented for the purpose of better reverse blocking capability. The compound field plate （CFP） consists of a drain field plate （DFP） and several floating field plates （FFPs）. The physical mechanisms of the CFP to improve the reverse breakdown voltage and to modulate the distributions of channel electric field and potential are investigated by two-dimensional numer- ical simulations with Silvaco-ATLAS. Compared with the HEMT with a Schottky drain （SD HEMT） and the HEMT with a Schottky drain and a DFP （SD-FP HEMT）, the superiorities of SD-CFP HEMT lie in the continuous improvement of the reverse breakdown voltage by increasing the number of FFPs and in the same fabrication procedure as the SD-FP HEMT. Two useful optimization laws for the SD-CFP HEMTs are found and extracted from simulation results. The relationship between the number of the FFPs and the reverse breakdown voltage as well as the FP efficiency in SD-CFP HEMTs are discussed. The results in this paper demonstrate a great potential of CFP for enhancing the reverse blocking ability in A1GaN/GaN HEMT and may be of great value and significance in the design and actual manufacture of SD-CFP HEMTs.展开更多
基金supported by the National Natural Science Foundation of China (Grant Nos.61204085,61334002,61306017,61474091,61574112,and 61574110)
文摘In this paper, a novel A1GaN/GaN HEMT with a Schottky drain and a compound field plate （SD-CFP HEMT） is presented for the purpose of better reverse blocking capability. The compound field plate （CFP） consists of a drain field plate （DFP） and several floating field plates （FFPs）. The physical mechanisms of the CFP to improve the reverse breakdown voltage and to modulate the distributions of channel electric field and potential are investigated by two-dimensional numer- ical simulations with Silvaco-ATLAS. Compared with the HEMT with a Schottky drain （SD HEMT） and the HEMT with a Schottky drain and a DFP （SD-FP HEMT）, the superiorities of SD-CFP HEMT lie in the continuous improvement of the reverse breakdown voltage by increasing the number of FFPs and in the same fabrication procedure as the SD-FP HEMT. Two useful optimization laws for the SD-CFP HEMTs are found and extracted from simulation results. The relationship between the number of the FFPs and the reverse breakdown voltage as well as the FP efficiency in SD-CFP HEMTs are discussed. The results in this paper demonstrate a great potential of CFP for enhancing the reverse blocking ability in A1GaN/GaN HEMT and may be of great value and significance in the design and actual manufacture of SD-CFP HEMTs.
