The fabrication of a dynamic threshold-2T0C(DT-2T0C) DRAM cell incorporating a ZnO charge-trap layer in the write transistor has been successfully achieved, addressing the negative hold voltage(V_(HOLD)) issue of conv...The fabrication of a dynamic threshold-2T0C(DT-2T0C) DRAM cell incorporating a ZnO charge-trap layer in the write transistor has been successfully achieved, addressing the negative hold voltage(V_(HOLD)) issue of conventional 2T0C DRAM cells using oxide channel layers. The proposed device facilitates dynamic modulation of turn-on voltage(V_(ON)) through an additional SET operation, allowing V_(ON) to shift above 0 V. The retention time in SET operation was extended to 10^(4) s by optimizing the tunneling layer deposition conditions. The device characterization revealed a significant correlation between V_(ON) and both the WRITE speed and the retention properties of the DT-2T0C, verifying the trade-off between WRITE time and retention time. A long retention time over 1000 s was achieved, even under VHOLD of 0 V.展开更多
As silicon-based transistors face fundamental scaling limits,the search for breakthrough alternatives has led to innovations in 3D architectures,heterogeneous integration,and sub-3 nm semiconductor body thicknesses.Ho...As silicon-based transistors face fundamental scaling limits,the search for breakthrough alternatives has led to innovations in 3D architectures,heterogeneous integration,and sub-3 nm semiconductor body thicknesses.However,the true effectiveness of these advancements lies in the seamless integration of alternative semiconductors tailored for next-generation transistors.In this review,we highlight key advances that enhance both scalability and switching performance by leveraging emerging semiconductor materials.Among the most promising candidates are 2D van der Waals semiconductors,Mott insulators,and amorphous oxide semiconductors,which offer not only unique electrical properties but also low-power operation and high carrier mobility.Additionally,we explore the synergistic interactions between these novel semiconductors and advanced gate dielectrics,including high-K materials,ferroelectrics,and atomically thin hexagonal boron nitride layers.Beyond introducing these novel material configurations,we address critical challenges such as leakage current and long-term device reliability,which become increasingly crucial as transistors scale down to atomic dimensions.Through concrete examples showcasing the potential of these materials in transistors,we provide key insights into overcoming fundamental obstacles—such as device reliability,scaling down limitations,and extended applications in artificial intelligence—ultimately paving the way for the development of future transistor technologies.展开更多
Organic electrochemical transistor(OECT)devices demonstrate great promising potential for reservoir computing(RC)systems,but their lack of tunable dynamic characteristics limits their application in multi-temporal sca...Organic electrochemical transistor(OECT)devices demonstrate great promising potential for reservoir computing(RC)systems,but their lack of tunable dynamic characteristics limits their application in multi-temporal scale tasks.In this study,we report an OECT-based neuromorphic device with tunable relaxation time(τ)by introducing an additional vertical back-gate electrode into a planar structure.The dual-gate design enablesτreconfiguration from 93 to 541 ms.The tunable relaxation behaviors can be attributed to the combined effects of planar-gate induced electrochemical doping and back-gateinduced electrostatic coupling,as verified by electrochemical impedance spectroscopy analysis.Furthermore,we used theτ-tunable OECT devices as physical reservoirs in the RC system for intelligent driving trajectory prediction,achieving a significant improvement in prediction accuracy from below 69%to 99%.The results demonstrate that theτ-tunable OECT shows a promising candidate for multi-temporal scale neuromorphic computing applications.展开更多
基金supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (RS-2024-00334190)。
文摘The fabrication of a dynamic threshold-2T0C(DT-2T0C) DRAM cell incorporating a ZnO charge-trap layer in the write transistor has been successfully achieved, addressing the negative hold voltage(V_(HOLD)) issue of conventional 2T0C DRAM cells using oxide channel layers. The proposed device facilitates dynamic modulation of turn-on voltage(V_(ON)) through an additional SET operation, allowing V_(ON) to shift above 0 V. The retention time in SET operation was extended to 10^(4) s by optimizing the tunneling layer deposition conditions. The device characterization revealed a significant correlation between V_(ON) and both the WRITE speed and the retention properties of the DT-2T0C, verifying the trade-off between WRITE time and retention time. A long retention time over 1000 s was achieved, even under VHOLD of 0 V.
基金supported by the National Research Foundation of Korea(NRF)funded by the Ministry of Science and ICT(MSIT),South Korea(RS-2024-00421181)financially supported in part by National R&D Program(2021M3H4A3A02086430)through NRF(National Research Foundation of Korea)funded by Ministry of Science and ICT+2 种基金the National Research Council of Science&Technology(NST)grant by the Korea government(MSIT)(No.GTL25021-210)The Inter-University Semiconductor Research Center,Institute of Engineering Research,and Soft Foundry Institute at Seoul National University provided research facilities for this workhe grant by the National Research Foundation of Korea(NSF)supported by the Korea government(MIST)(RS-2025-16903034)。
文摘As silicon-based transistors face fundamental scaling limits,the search for breakthrough alternatives has led to innovations in 3D architectures,heterogeneous integration,and sub-3 nm semiconductor body thicknesses.However,the true effectiveness of these advancements lies in the seamless integration of alternative semiconductors tailored for next-generation transistors.In this review,we highlight key advances that enhance both scalability and switching performance by leveraging emerging semiconductor materials.Among the most promising candidates are 2D van der Waals semiconductors,Mott insulators,and amorphous oxide semiconductors,which offer not only unique electrical properties but also low-power operation and high carrier mobility.Additionally,we explore the synergistic interactions between these novel semiconductors and advanced gate dielectrics,including high-K materials,ferroelectrics,and atomically thin hexagonal boron nitride layers.Beyond introducing these novel material configurations,we address critical challenges such as leakage current and long-term device reliability,which become increasingly crucial as transistors scale down to atomic dimensions.Through concrete examples showcasing the potential of these materials in transistors,we provide key insights into overcoming fundamental obstacles—such as device reliability,scaling down limitations,and extended applications in artificial intelligence—ultimately paving the way for the development of future transistor technologies.
基金supported by the National Key Research and Development Program of China under Grant 2022YFB3608300in part by the National Nature Science Foundation of China(NSFC)under Grants 62404050,U2341218,62574056,62204052。
文摘Organic electrochemical transistor(OECT)devices demonstrate great promising potential for reservoir computing(RC)systems,but their lack of tunable dynamic characteristics limits their application in multi-temporal scale tasks.In this study,we report an OECT-based neuromorphic device with tunable relaxation time(τ)by introducing an additional vertical back-gate electrode into a planar structure.The dual-gate design enablesτreconfiguration from 93 to 541 ms.The tunable relaxation behaviors can be attributed to the combined effects of planar-gate induced electrochemical doping and back-gateinduced electrostatic coupling,as verified by electrochemical impedance spectroscopy analysis.Furthermore,we used theτ-tunable OECT devices as physical reservoirs in the RC system for intelligent driving trajectory prediction,achieving a significant improvement in prediction accuracy from below 69%to 99%.The results demonstrate that theτ-tunable OECT shows a promising candidate for multi-temporal scale neuromorphic computing applications.
