In this paper,we present a circuit model of single-quantum-well InGaN/GaN light-emitting diodes based on the standard rate equations.Two rate equations describe carrier transport processes occurring in sep-arate confi...In this paper,we present a circuit model of single-quantum-well InGaN/GaN light-emitting diodes based on the standard rate equations.Two rate equations describe carrier transport processes occurring in sep-arate confinement heterostructure and quantum well respectively,and the third equation describes the varied photons in quantum well.By using the presented model,impacts of quantum well thickness on the static and dynamic performances are investigated.Simulated results show that LED with 4 nm well exhibits better lightcurrent(L-I)performance,but LED with 3 nm well presents wider 3 dB modulation bandwidth.It reveals that high carrier density in quantum well is detrimental to the static performance,but beneficial to the dynamic performance.展开更多
Perovskite quantum dot light-emitting diodes(Pe-QLEDs)have shown immense application potential in display and lighting fields due to their narrow full-width at half maximum(FWHM)and high photoluminescence quantum yiel...Perovskite quantum dot light-emitting diodes(Pe-QLEDs)have shown immense application potential in display and lighting fields due to their narrow full-width at half maximum(FWHM)and high photoluminescence quantum yield(PLQY).Despite significant advancements in their performance,challenges such as defects and ion migration still hinder their long-term stability and operational efficiency.To address these issues,various optimization strategies,including ligand engineering,interface passivation,and self-assembly strategy,are being actively researched.This review focuses on the synthesis methods,challenges and optimization of perovskite quantum dots,which are critical for the commercialization and large-scale production of high-performance and stable Pe-QLEDs.展开更多
文摘In this paper,we present a circuit model of single-quantum-well InGaN/GaN light-emitting diodes based on the standard rate equations.Two rate equations describe carrier transport processes occurring in sep-arate confinement heterostructure and quantum well respectively,and the third equation describes the varied photons in quantum well.By using the presented model,impacts of quantum well thickness on the static and dynamic performances are investigated.Simulated results show that LED with 4 nm well exhibits better lightcurrent(L-I)performance,but LED with 3 nm well presents wider 3 dB modulation bandwidth.It reveals that high carrier density in quantum well is detrimental to the static performance,but beneficial to the dynamic performance.
文摘Perovskite quantum dot light-emitting diodes(Pe-QLEDs)have shown immense application potential in display and lighting fields due to their narrow full-width at half maximum(FWHM)and high photoluminescence quantum yield(PLQY).Despite significant advancements in their performance,challenges such as defects and ion migration still hinder their long-term stability and operational efficiency.To address these issues,various optimization strategies,including ligand engineering,interface passivation,and self-assembly strategy,are being actively researched.This review focuses on the synthesis methods,challenges and optimization of perovskite quantum dots,which are critical for the commercialization and large-scale production of high-performance and stable Pe-QLEDs.
