The performance degradation of micro light-emitting diodes(micro-LEDs)is closely associated with the deterioration of sidewall passivation layers under prolonged electrical bias.We investigate reliability improvements...The performance degradation of micro light-emitting diodes(micro-LEDs)is closely associated with the deterioration of sidewall passivation layers under prolonged electrical bias.We investigate reliability improvements in 20μm×20μm InGaN/GaN blue micro-LEDs by suppressing the formation of an unstable interfacial layer during sidewall passivation.SiO_(2)is deposited on the etched mesa sidewalls using either Sputtering or plasma-enhanced chemical vapor deposition(PECVD).Comparative analysis reveals that PECVD-passivated devices experience more severe performance degradation,primarily due to the increased leakage current.After 100 h of accelerated aging,external quantum efficiency decreases by 44%in PECVD-passivated samples,whereas Sputter-passivated devices exhibit only an11%reduction.This discrepancy is attributed to the formation of a thicker and chemically unstable gallium oxynitride(Ga-O_(X)-N_(1-X))interfacial layer at the SiO_(2)∕GaN-based interface,which facilitates the generation of sidewall defects.Suppressing the formation of this interlayer enhances the crystallinity and structural stability of the passivation layer,thereby mitigating the activation of point defects.Notably,Sputter deposition is more effective in minimizing the formation of Ga-O-N interlayer.These findings emphasize the critical role of achieving low-defect-density sidewall passivation to improve the reliability of micro-LEDs for next-generation high-resolution display applications.展开更多
Mini light-emitting diodes(Mini-LEDs)show great application potential in high-end displays owing to their superior pixel density,brightness,responsiveness,and efficiency.However,current packaging materials for Mini-LE...Mini light-emitting diodes(Mini-LEDs)show great application potential in high-end displays owing to their superior pixel density,brightness,responsiveness,and efficiency.However,current packaging materials for Mini-LEDs are predominantly thermally cured,which is energy-and time-consuming and can adversely affect electronic components.In this study,a novel UV-curable silicone resin containing phenyl,disulfide,and acryloyl groups(SPASR)is developed from commercially available siloxanes.The resin exhibits a refractive index(n_(d))higher than 1.5,and it can be cured within 30 s under UV irradiation.After curing,it exhibits an optical transparency exceeding 92%,a lap adhesion strength of up to1.84 MPa,and good thermostability(T_(5%)>265℃).Notably,the volume shrinkage is less than 4.83%,attributed to the release of photopolymerization stress via UV-induced disulfide metathesis during UV curing.Mini-LEDs encapsulated with this resin show luminescence properties comparable to those of conventional thermally-cured sealants,and show excellent sealability wihtout visible penetration after being immersed in red ink for 12 h.Consequently,these excellent properties make the SPASR resin an ideal candidate for microelectronic encapsulation,offering a more reliable and efficient solution for the electronics industry.展开更多
To precisely control intrachain π-electron delocalization and interchain interaction simultaneously is the prerequisite to obtain stable and efficient deep-blue light-emitting p-n polymer semiconductors for the polym...To precisely control intrachain π-electron delocalization and interchain interaction simultaneously is the prerequisite to obtain stable and efficient deep-blue light-emitting p-n polymer semiconductors for the polymer light-emitting diodes(PLEDs).Herein,we introduced the steric carbazole-fluorene nanogrid into light-emitting diphenyl sulfone-based p-n polymer semiconductors(PG and PDG) via metal-free C-N coupling polymerization for the fabrication of deep-blue PLEDs.The steric,rigid and twisted configuration between nanogrid and diphenyl sulfone in PG and PDG present the unique characteristic of large steric hindrance interaction to suppress interchain aggregation in solid state.Due to the different length of electron-deficient diphenyl sulfone monomers,PG showed a deep-blue emission with a maximum peak at 428 nm but red-shifted to 480 nm for the PDG films.Interestingly,similar deep-blue emission behavior of PG in diluted non-polar solution and films suggested the extremely weak interchain aggregation.Finally,PLEDs based on PG are fabricated with a stable deep-blue emission of CIE(0.15,0.10),and corresponding EL spectral profile is also completely identical to PL ones of diluted solution,revealed the intrachain emission without obvious interchain excited state,confirmed effectiveness of the steric hindrance functionalization of nanogrid in p-n polymer semiconductor for deep-blue light-emitting organic optoelectronics.展开更多
A high-sensitivity,low-noise single photon avalanche diode(SPAD)detector was presented based on a 180 nm BCD process.The proposed device utilizes a p-implant layer/high-voltage n-well(HVNW)junction to form a deep aval...A high-sensitivity,low-noise single photon avalanche diode(SPAD)detector was presented based on a 180 nm BCD process.The proposed device utilizes a p-implant layer/high-voltage n-well(HVNW)junction to form a deep avalanche multiplication region for near-infrared(NIR)sensitivity enhancement.By optimizing the device size and electric field of the guard ring,the fill factor(FF)is significantly improved,further increasing photon detection efficiency(PDE).To solve the dark noise caused by the increasing active diameter,a field polysilicon gate structure connected to the p+anode was investigated,effectively suppressing dark count noise by 76.6%.It is experimentally shown that when the active diameter increases from 5 to 10μm,the FF is significantly improved from 20.7%to 39.1%,and thus the peak PDE also rises from 13.3%to 25.8%.At an excess bias voltage of 5 V,a NIR photon detection probability(PDP)of 6.8%at 905 nm,a dark count rate(DCR)of 2.12 cps/μm^(2),an afterpulsing probability(AP)of 1.2%,and a timing jitter of 216 ps are achieved,demonstrating excellent single photon detection performance.展开更多
基金supported by the Samsung Research Funding&Incubation Center of Samsung Electronics under Project No.SRFC-MA2402-05supported by the KENTECH Center for Shared Research Facilities。
文摘The performance degradation of micro light-emitting diodes(micro-LEDs)is closely associated with the deterioration of sidewall passivation layers under prolonged electrical bias.We investigate reliability improvements in 20μm×20μm InGaN/GaN blue micro-LEDs by suppressing the formation of an unstable interfacial layer during sidewall passivation.SiO_(2)is deposited on the etched mesa sidewalls using either Sputtering or plasma-enhanced chemical vapor deposition(PECVD).Comparative analysis reveals that PECVD-passivated devices experience more severe performance degradation,primarily due to the increased leakage current.After 100 h of accelerated aging,external quantum efficiency decreases by 44%in PECVD-passivated samples,whereas Sputter-passivated devices exhibit only an11%reduction.This discrepancy is attributed to the formation of a thicker and chemically unstable gallium oxynitride(Ga-O_(X)-N_(1-X))interfacial layer at the SiO_(2)∕GaN-based interface,which facilitates the generation of sidewall defects.Suppressing the formation of this interlayer enhances the crystallinity and structural stability of the passivation layer,thereby mitigating the activation of point defects.Notably,Sputter deposition is more effective in minimizing the formation of Ga-O-N interlayer.These findings emphasize the critical role of achieving low-defect-density sidewall passivation to improve the reliability of micro-LEDs for next-generation high-resolution display applications.
基金financially supported by the National Natural Science Foundation of China(No.52273104)。
文摘Mini light-emitting diodes(Mini-LEDs)show great application potential in high-end displays owing to their superior pixel density,brightness,responsiveness,and efficiency.However,current packaging materials for Mini-LEDs are predominantly thermally cured,which is energy-and time-consuming and can adversely affect electronic components.In this study,a novel UV-curable silicone resin containing phenyl,disulfide,and acryloyl groups(SPASR)is developed from commercially available siloxanes.The resin exhibits a refractive index(n_(d))higher than 1.5,and it can be cured within 30 s under UV irradiation.After curing,it exhibits an optical transparency exceeding 92%,a lap adhesion strength of up to1.84 MPa,and good thermostability(T_(5%)>265℃).Notably,the volume shrinkage is less than 4.83%,attributed to the release of photopolymerization stress via UV-induced disulfide metathesis during UV curing.Mini-LEDs encapsulated with this resin show luminescence properties comparable to those of conventional thermally-cured sealants,and show excellent sealability wihtout visible penetration after being immersed in red ink for 12 h.Consequently,these excellent properties make the SPASR resin an ideal candidate for microelectronic encapsulation,offering a more reliable and efficient solution for the electronics industry.
基金the support from the Jiangsu Provincial Senior Talent Program (Dengfeng,Jiangsu University)the support from the National Key R&D Program of China (No.2024YFB3612600)+3 种基金the National Natural Science Foundation of China (Nos.22275098,62288102)Basic Research Program of Jiangsu (No.BK20243057)the Natural Science Research Start-up Foundation of Recruiting Talents of Nanjing University of Posts and Telecommunications (No.NY222097)the National Natural Science Foundation of China (No.62205035)。
文摘To precisely control intrachain π-electron delocalization and interchain interaction simultaneously is the prerequisite to obtain stable and efficient deep-blue light-emitting p-n polymer semiconductors for the polymer light-emitting diodes(PLEDs).Herein,we introduced the steric carbazole-fluorene nanogrid into light-emitting diphenyl sulfone-based p-n polymer semiconductors(PG and PDG) via metal-free C-N coupling polymerization for the fabrication of deep-blue PLEDs.The steric,rigid and twisted configuration between nanogrid and diphenyl sulfone in PG and PDG present the unique characteristic of large steric hindrance interaction to suppress interchain aggregation in solid state.Due to the different length of electron-deficient diphenyl sulfone monomers,PG showed a deep-blue emission with a maximum peak at 428 nm but red-shifted to 480 nm for the PDG films.Interestingly,similar deep-blue emission behavior of PG in diluted non-polar solution and films suggested the extremely weak interchain aggregation.Finally,PLEDs based on PG are fabricated with a stable deep-blue emission of CIE(0.15,0.10),and corresponding EL spectral profile is also completely identical to PL ones of diluted solution,revealed the intrachain emission without obvious interchain excited state,confirmed effectiveness of the steric hindrance functionalization of nanogrid in p-n polymer semiconductor for deep-blue light-emitting organic optoelectronics.
基金supported by the National Natural Science Foundation of China under Grant 62171233the Natural Science Foundation of China,Jiangsu Province under Grant BK20241891the Jiangsu Province Graduate Research and Practice Innovation Plan under Grants SJCX24_0313 and KYCX24_1169。
文摘A high-sensitivity,low-noise single photon avalanche diode(SPAD)detector was presented based on a 180 nm BCD process.The proposed device utilizes a p-implant layer/high-voltage n-well(HVNW)junction to form a deep avalanche multiplication region for near-infrared(NIR)sensitivity enhancement.By optimizing the device size and electric field of the guard ring,the fill factor(FF)is significantly improved,further increasing photon detection efficiency(PDE).To solve the dark noise caused by the increasing active diameter,a field polysilicon gate structure connected to the p+anode was investigated,effectively suppressing dark count noise by 76.6%.It is experimentally shown that when the active diameter increases from 5 to 10μm,the FF is significantly improved from 20.7%to 39.1%,and thus the peak PDE also rises from 13.3%to 25.8%.At an excess bias voltage of 5 V,a NIR photon detection probability(PDP)of 6.8%at 905 nm,a dark count rate(DCR)of 2.12 cps/μm^(2),an afterpulsing probability(AP)of 1.2%,and a timing jitter of 216 ps are achieved,demonstrating excellent single photon detection performance.
