Rectifying circuit,as a crucial component for converting alternating current into direct current,plays a pivotal role in energy harvesting microsystems.Traditional silicon-based or germanium-based rectifier diodes hin...Rectifying circuit,as a crucial component for converting alternating current into direct current,plays a pivotal role in energy harvesting microsystems.Traditional silicon-based or germanium-based rectifier diodes hinder system integration due to their specific manufacturing processes.Conversely,metal oxide diodes,with their simple fabrication techniques,offer advantages for system integration.The oxygen vacancy defect of oxide semiconductor will greatly affect the electrical performance of the device,so the performance of the diode can be effectively controlled by adjusting the oxygen vacancy concentration.This study centers on optimizing the performance of diodes by modulating the oxygen vacancy concentration within InGaZnO films through control of oxygen flows during the sputtering process.Experimental results demonstrate that the diode exhibits a forward current density of 43.82 A·cm^(−2),with a rectification ratio of 6.94×10^(4),efficiently rectifying input sine signals with 1 kHz frequency and 5 V magnitude.These results demonstrate its potential in energy conversion and management.By adjusting the oxygen vacancy,a methodology is provided for optimizing the performance of rectifying diodes.展开更多
This paper describes the fabrication and electrical characteristics of Ti/4H-SiC Schottky barrier diodes （SBDs）. The ideality factor n = 1.08 and effective Schottky barrier heightφ= 1.05eV of the SBDs were measured...This paper describes the fabrication and electrical characteristics of Ti/4H-SiC Schottky barrier diodes （SBDs）. The ideality factor n = 1.08 and effective Schottky barrier heightφ= 1.05eV of the SBDs were measured with the method of forward current density-voltage （J-V）. A low reverse leakage current below 5.96 ×10^-3A/cm^2 at a bias voltage of - 1. 1kV was obtained. By using B^＋ implantation,an amorphous layer as the edge termination was formed. We used the PECVD SiO2 as the field plate dielectric. The SBDs have an on-state current density of 430A/cm^2 at a forward voltage drop of about 4V. The specific on-resistance Ro, was found to be 6. 77mΩ2 · cm^2 .展开更多
文摘Rectifying circuit,as a crucial component for converting alternating current into direct current,plays a pivotal role in energy harvesting microsystems.Traditional silicon-based or germanium-based rectifier diodes hinder system integration due to their specific manufacturing processes.Conversely,metal oxide diodes,with their simple fabrication techniques,offer advantages for system integration.The oxygen vacancy defect of oxide semiconductor will greatly affect the electrical performance of the device,so the performance of the diode can be effectively controlled by adjusting the oxygen vacancy concentration.This study centers on optimizing the performance of diodes by modulating the oxygen vacancy concentration within InGaZnO films through control of oxygen flows during the sputtering process.Experimental results demonstrate that the diode exhibits a forward current density of 43.82 A·cm^(−2),with a rectification ratio of 6.94×10^(4),efficiently rectifying input sine signals with 1 kHz frequency and 5 V magnitude.These results demonstrate its potential in energy conversion and management.By adjusting the oxygen vacancy,a methodology is provided for optimizing the performance of rectifying diodes.
文摘This paper describes the fabrication and electrical characteristics of Ti/4H-SiC Schottky barrier diodes （SBDs）. The ideality factor n = 1.08 and effective Schottky barrier heightφ= 1.05eV of the SBDs were measured with the method of forward current density-voltage （J-V）. A low reverse leakage current below 5.96 ×10^-3A/cm^2 at a bias voltage of - 1. 1kV was obtained. By using B^＋ implantation,an amorphous layer as the edge termination was formed. We used the PECVD SiO2 as the field plate dielectric. The SBDs have an on-state current density of 430A/cm^2 at a forward voltage drop of about 4V. The specific on-resistance Ro, was found to be 6. 77mΩ2 · cm^2 .
