In this letter,we demonstrate the effect ofγirradiation on the lateral AlGaN/GaN Schottky barrier diodes(SBDs)with self-terminated recessed anode structure and low work-function metal tungsten(W)as anode.For a compre...In this letter,we demonstrate the effect ofγirradiation on the lateral AlGaN/GaN Schottky barrier diodes(SBDs)with self-terminated recessed anode structure and low work-function metal tungsten(W)as anode.For a comprehensive evaluation of the radiation-resistance performance of the device,the total dose ofγirradiation is up to 100 kGy with irradiation time of 20 h.Attributed to the barrier lowering effect of the W/GaN interface induced byγirradiation observed in the experiment,the extracted turnon voltage(VON)defined at anode forward current of 1 mA decreases from 0.47 to 0.43 V.Meanwhile,benefiting from the reinforced Schottky interface treated by post-anode-annealing,a high breakdown voltage(BV)of 1.75 kV is obtained for theγ-irradiated AlGaN/GaN SBD,which shows the promising application for the deep-space radiation environment and promotes the development of radiation-resistance research for GaN SBDs.展开更多
基金supported in part by the Key Research and Development Projects of Shaanxi Province(Grant No.2024GX-YBXM-082)in part by the Natural Science Basic Research Program of Shaanxi Province(Grant No.2023-JC-JQ-56)+2 种基金in part by the Fundamental Research Funds for the Central Universities(Grant Nos.QTZX23076,XJSJ25014)in part by the funding of the National Key Research and Development Program of China(Grant No.2022YFB3604400)in part by the China Postdoctoral Science Foundation(Grant No.2021TQ0256).
文摘In this letter,we demonstrate the effect ofγirradiation on the lateral AlGaN/GaN Schottky barrier diodes(SBDs)with self-terminated recessed anode structure and low work-function metal tungsten(W)as anode.For a comprehensive evaluation of the radiation-resistance performance of the device,the total dose ofγirradiation is up to 100 kGy with irradiation time of 20 h.Attributed to the barrier lowering effect of the W/GaN interface induced byγirradiation observed in the experiment,the extracted turnon voltage(VON)defined at anode forward current of 1 mA decreases from 0.47 to 0.43 V.Meanwhile,benefiting from the reinforced Schottky interface treated by post-anode-annealing,a high breakdown voltage(BV)of 1.75 kV is obtained for theγ-irradiated AlGaN/GaN SBD,which shows the promising application for the deep-space radiation environment and promotes the development of radiation-resistance research for GaN SBDs.
