The leaching mechanism of gallium(Ga)and germanium(Ge)from zinc powder replacement residue(ZPRR)was investigated through ultrasonic-assisted sulfuric acid leaching.Characterization via XRD,SEM,XPS,and FT-IR revealed t...The leaching mechanism of gallium(Ga)and germanium(Ge)from zinc powder replacement residue(ZPRR)was investigated through ultrasonic-assisted sulfuric acid leaching.Characterization via XRD,SEM,XPS,and FT-IR revealed that ultrasonic treatment promotes the dehydration of H_(4)SiO_(4)colloids,thereby reducing their adsorption capacities for Ga and Ge complexes.Additionally,ultrasound enhances the dissolution of CaS in H_(2)SO_(4),increasing H_(2)S production,which aids in the reduction of Fe^(3+)and mitigates iron precipitate formation.Process parameters including ultrasonic power(0-450 W),temperature(100-120℃),and leaching time(30-120 min)were systematically optimized,achieving optimal leaching efficiencies of Ga and Ge at 95.7%and 94.5%,respectively.展开更多
文摘探索了一种X射线反射(X-ray reflectance,XRR)表征六方氮化硼(Hexagonal boron nitride,h-BN)薄膜厚度的测试方法。通过金属有机化学气相沉积在蓝宝石衬底上生长不同厚度的h-BN薄膜,并利用拉曼光谱表征,证实了h-BN薄膜在蓝宝石衬底上的成功生长。对比了不同生长条件的h-BN与蓝宝石衬底的XRR测试曲线,表明XRR测试曲线振荡与薄膜厚度强相关。通过拟合XRR测试曲线来获得h-BN的厚度值与材料密度值,经对比发现拟合厚度值与原子力显微镜(Atomic force microscopy,AFM)测试或透射电子显微镜(Transmission electron mi‑croscopy,TEM)测试值一致,同时发现3.5 nm厚度的样品材料密度值与体材料密度值接近,但2 nm以下样品的材料密度均值低于体材料。
基金financially supported by the National Key Research and Development Program of China(No.2022YFC2904900)the National Natural Science Foundation of China(Nos.52204392,52274385,52204347)the Young Elite Scientists Sponsorship Program by CAST,China(No.2022QNRC001)。
文摘The leaching mechanism of gallium(Ga)and germanium(Ge)from zinc powder replacement residue(ZPRR)was investigated through ultrasonic-assisted sulfuric acid leaching.Characterization via XRD,SEM,XPS,and FT-IR revealed that ultrasonic treatment promotes the dehydration of H_(4)SiO_(4)colloids,thereby reducing their adsorption capacities for Ga and Ge complexes.Additionally,ultrasound enhances the dissolution of CaS in H_(2)SO_(4),increasing H_(2)S production,which aids in the reduction of Fe^(3+)and mitigates iron precipitate formation.Process parameters including ultrasonic power(0-450 W),temperature(100-120℃),and leaching time(30-120 min)were systematically optimized,achieving optimal leaching efficiencies of Ga and Ge at 95.7%and 94.5%,respectively.
