Ultra-thin crystalline silicon stands as a cornerstone material in the foundation of modern micro and nano electronics.Despite the proliferation of various materials including oxide-based,polymer-based,carbon-based,an...Ultra-thin crystalline silicon stands as a cornerstone material in the foundation of modern micro and nano electronics.Despite the proliferation of various materials including oxide-based,polymer-based,carbon-based,and two-dimensional(2D)materials,crystal silicon continues to maintain its stronghold,owing to its superior functionality,scalability,stability,reliability,and uniformity.Nonetheless,the inherent rigidity of the bulk silicon leads to incompatibility with soft tissues,hindering the utilization amid biomedical applications.Because of such issues,decades of research have enabled successful utilization of various techniques to precisely control the thickness and morphology of silicon layers at the scale of several nanometres.This review provides a comprehensive exploration on the features of ultra-thin single crystalline silicon as a semiconducting material,and its role especially among the frontier of advanced bioelectronics.Key processes that enable the transition of rigid silicon to flexible form factors are exhibited,in accordance with their chronological sequence.The inspected stages span both prior and subsequent to transferring the silicon membrane,categorized respectively as on-wafer manufacturing and rigid-to-soft integration.Extensive guidelines to unlock the full potential of flexible electronics are provided through ordered analysis of each manufacturing procedure,the latest findings of biomedical applications,along with practical perspectives for researchers and manufacturers.展开更多
Selenium distillation slag(SDS)is a high-value-added secondary resource with a high recovery value.This paper aims to investigate the leaching behavior and kinetics of selenium,tellurium,and copper in the SDS acid oxi...Selenium distillation slag(SDS)is a high-value-added secondary resource with a high recovery value.This paper aims to investigate the leaching behavior and kinetics of selenium,tellurium,and copper in the SDS acid oxidation leaching process with H_(2)SO_(4) and H_(2)O_(2).The experimental results showed that under the optimum conditions,the contents of selenium,tellurium,and copper in the SDS were reduced from 22.13 wt%,3.58 wt%,and 6.42 wt%to 3.06 wt%,0.27 wt%,and 0.33 wt%,respectively.Correspondingly,the recovery rates are 87.08%,97.15%and 99.7%.The leaching processes of selenium and tellurium were controlled by diffusion and chemical reactions,and the leaching behavior of copper was controlled by chemical reactions.Below 45℃,the activation energies for selenium,tellurium,and copper were found to be 26.47,62.18 and 19.67 kJ/mol,respectively.In addition,the contents of lead,silver and gold in the leaching residue are increased to 46.8 wt%,8.35 wt%and 0.27 wt%,respectively.These substances can be utilized as raw materials for the recovery of these valuable metals.Importantly,the entire process does not generate toxic or harmful waste,making it a green and environmentally friendly method for resource recovery.展开更多
Strained germanium hole spin qubits are promising for quantum computing,but the devices hosting these qubits face challenges from high interface trap density,which originates from the naturally oxidized surface of the...Strained germanium hole spin qubits are promising for quantum computing,but the devices hosting these qubits face challenges from high interface trap density,which originates from the naturally oxidized surface of the wafer.These traps can degrade the device stability and cause an excessively high threshold voltage.Surface passivation is regarded as an effective method to mitigate these impacts.In this study,we perform low-thermal-budget chemical passivation using the nitric acid oxidation of silicon method on the surface of strained germanium devices and investigate the impact of passivation on the device stability.The results demonstrate that surface passivation effectively reduces the interface defect density.This not only improves the stability of the device's threshold voltage but also enhances its long-term static stability.Furthermore,we construct a band diagram of hole surface tunneling at the static operating point to gain a deeper understanding of the physical mechanism through which passivation affects the device stability.This study provides valuable insights for future optimization of strained Ge-based quantum devices and advances our understanding of how interface states affect device stability.展开更多
The superior radiation tolerance of silicon-on-insulator(SOI)wafers makes them critical for next-generation integrated circuit and micro-electro-mechanical system electronics in space technology and nuclear energy,and...The superior radiation tolerance of silicon-on-insulator(SOI)wafers makes them critical for next-generation integrated circuit and micro-electro-mechanical system electronics in space technology and nuclear energy,and yet the inherently low thermal conductivity buried oxide layer severely impedes thermal management in SOI-based radio frequency/power devices.While diamond offers exceptional thermal conductivity to enhance heat dissipation,its significant thermomechanical mismatch with silicon poses major challenges to reliable hetero-integration.Here we demonstrate a novel silicon film-on-diamond(SOD)heterostructure using microtransfer printing(μTP)technology,with comparative analysis against surface activated bonded silicon-on-silicon carbide(SOC)and conventional SOI wafers.TheμTP-SOD samples exhibit near-zero residual stress(0.026 GPa)in the transferred Si layer and substantially reduced interfacial thermal resistance(ITR)compared to conventional SOI and SOC wafers.Integrated analysis of interfacial microstructures and molecular dynamics simulations reveals how interfacial structures and amorphous compositions govern the phonon thermal transport.Particularly,the amorphous SiO-SiC transition layer enhances phonon transmission at theμTP-SOD heterointerface to achieve a low ITR of 6.3+1.6/-1.5 m^(2)·K/GW.Finite element analysis verifies that these interfacial enhancements,combined with the diamond’s exceptional thermal conductivity,reduce the device junction-temperature rise by 66.7%relative to SOI devices at 15 W/mm output power.The low residual stress and reduced ITR ofμTP-SOD are expected to provide promising thermal management schemes for SOI-based electronics.展开更多
基金support received from National Research Foundation of Korea (NRF) Grant funded by the Korea government (MSIT)(RS-2024-00353768)the National Research Foundation of Korea (NRF) Grant funded by the Korea government (MSIT)(RS-2025-02217919)+1 种基金funded by the Yonsei Fellowshipfunded by Lee Youn Jae and the KIST Institutional Program Project No.2E31603-22-140 (KJY).
文摘Ultra-thin crystalline silicon stands as a cornerstone material in the foundation of modern micro and nano electronics.Despite the proliferation of various materials including oxide-based,polymer-based,carbon-based,and two-dimensional(2D)materials,crystal silicon continues to maintain its stronghold,owing to its superior functionality,scalability,stability,reliability,and uniformity.Nonetheless,the inherent rigidity of the bulk silicon leads to incompatibility with soft tissues,hindering the utilization amid biomedical applications.Because of such issues,decades of research have enabled successful utilization of various techniques to precisely control the thickness and morphology of silicon layers at the scale of several nanometres.This review provides a comprehensive exploration on the features of ultra-thin single crystalline silicon as a semiconducting material,and its role especially among the frontier of advanced bioelectronics.Key processes that enable the transition of rigid silicon to flexible form factors are exhibited,in accordance with their chronological sequence.The inspected stages span both prior and subsequent to transferring the silicon membrane,categorized respectively as on-wafer manufacturing and rigid-to-soft integration.Extensive guidelines to unlock the full potential of flexible electronics are provided through ordered analysis of each manufacturing procedure,the latest findings of biomedical applications,along with practical perspectives for researchers and manufacturers.
基金Project(2022YFC2904900) supported by the National Key Research and Development Program of ChinaProject(U1902221) supported by the National Natural Science Foundation of China。
文摘Selenium distillation slag(SDS)is a high-value-added secondary resource with a high recovery value.This paper aims to investigate the leaching behavior and kinetics of selenium,tellurium,and copper in the SDS acid oxidation leaching process with H_(2)SO_(4) and H_(2)O_(2).The experimental results showed that under the optimum conditions,the contents of selenium,tellurium,and copper in the SDS were reduced from 22.13 wt%,3.58 wt%,and 6.42 wt%to 3.06 wt%,0.27 wt%,and 0.33 wt%,respectively.Correspondingly,the recovery rates are 87.08%,97.15%and 99.7%.The leaching processes of selenium and tellurium were controlled by diffusion and chemical reactions,and the leaching behavior of copper was controlled by chemical reactions.Below 45℃,the activation energies for selenium,tellurium,and copper were found to be 26.47,62.18 and 19.67 kJ/mol,respectively.In addition,the contents of lead,silver and gold in the leaching residue are increased to 46.8 wt%,8.35 wt%and 0.27 wt%,respectively.These substances can be utilized as raw materials for the recovery of these valuable metals.Importantly,the entire process does not generate toxic or harmful waste,making it a green and environmentally friendly method for resource recovery.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.92265113,12034018,12474490,and 62404248)the Innovation Program for Quantum Science and Technology(Grant No.2021ZD0302300)。
文摘Strained germanium hole spin qubits are promising for quantum computing,but the devices hosting these qubits face challenges from high interface trap density,which originates from the naturally oxidized surface of the wafer.These traps can degrade the device stability and cause an excessively high threshold voltage.Surface passivation is regarded as an effective method to mitigate these impacts.In this study,we perform low-thermal-budget chemical passivation using the nitric acid oxidation of silicon method on the surface of strained germanium devices and investigate the impact of passivation on the device stability.The results demonstrate that surface passivation effectively reduces the interface defect density.This not only improves the stability of the device's threshold voltage but also enhances its long-term static stability.Furthermore,we construct a band diagram of hole surface tunneling at the static operating point to gain a deeper understanding of the physical mechanism through which passivation affects the device stability.This study provides valuable insights for future optimization of strained Ge-based quantum devices and advances our understanding of how interface states affect device stability.
基金supported by the National Key R&D Program of China(No.2023YFA1407001)the National Natural Science Foundation of China(Nos.11975125,12204472,and 62304232)+1 种基金the Guangdong Special Support Program(No.2021TQ06C953)the Open Research Fund of State Key Laboratory of Materials for Integrated Circuits(No.SKLIC-K2024-04).
文摘The superior radiation tolerance of silicon-on-insulator(SOI)wafers makes them critical for next-generation integrated circuit and micro-electro-mechanical system electronics in space technology and nuclear energy,and yet the inherently low thermal conductivity buried oxide layer severely impedes thermal management in SOI-based radio frequency/power devices.While diamond offers exceptional thermal conductivity to enhance heat dissipation,its significant thermomechanical mismatch with silicon poses major challenges to reliable hetero-integration.Here we demonstrate a novel silicon film-on-diamond(SOD)heterostructure using microtransfer printing(μTP)technology,with comparative analysis against surface activated bonded silicon-on-silicon carbide(SOC)and conventional SOI wafers.TheμTP-SOD samples exhibit near-zero residual stress(0.026 GPa)in the transferred Si layer and substantially reduced interfacial thermal resistance(ITR)compared to conventional SOI and SOC wafers.Integrated analysis of interfacial microstructures and molecular dynamics simulations reveals how interfacial structures and amorphous compositions govern the phonon thermal transport.Particularly,the amorphous SiO-SiC transition layer enhances phonon transmission at theμTP-SOD heterointerface to achieve a low ITR of 6.3+1.6/-1.5 m^(2)·K/GW.Finite element analysis verifies that these interfacial enhancements,combined with the diamond’s exceptional thermal conductivity,reduce the device junction-temperature rise by 66.7%relative to SOI devices at 15 W/mm output power.The low residual stress and reduced ITR ofμTP-SOD are expected to provide promising thermal management schemes for SOI-based electronics.
