β-Ga_(2)O_(3)is a promising candidate for solarblind ultraviolet photodetection owing to its suitable bandgap of approximately 4.9 eV,excellent photoresponse characteristics,and high stability.However,the lack of a s...β-Ga_(2)O_(3)is a promising candidate for solarblind ultraviolet photodetection owing to its suitable bandgap of approximately 4.9 eV,excellent photoresponse characteristics,and high stability.However,the lack of a sufficient driving force within the material leads to extensive bulk charge recombination,limiting its photocurrent and thus posing significant challenges in designing high-performance Ga_(2)O_(3)-based photodetection.In this study,we propose a gradient doping strategy to achieve a Sn-doping concentration gradient along theβ-Ga_(2)O_(3)film thickness.By combining sol-gel synthesis with rapid thermal annealing,a spatially graded band structure with a full-space built-in electric field is constructed,which increases the width of band bending over a large region and is crucial for significantly enhancing carrier separation and transport in the bulk.The resulting gradient Sn-dopedβ-Ga_(2)O_(3)enables exceptional photoelectric performance without an external bias under 254 nm irradiation,including a superior responsivity of 66.88 mA W^(-1),a high detectivity of 8.12×10^(11)Jones,and a fast rise/decay time of 79/65 ms,outstanding most existing similar reported photoelectrochemical(PEC)type optoelectronic devices.Additionally,the device exhibits excellent long-term stability and enables high-resolution underwater ultraviolet imaging.This study demonstrates that the gradient doping strategy provides a feasible approach for enhancing the PEC performance ofβ-Ga_(2)O_(3)photoelectrodes.展开更多
With the rapid advancement of optoelectronic technology,high-performance photodetectors are increasingly in demand in fields such as environmental monitoring,optical communication,and defense systems,where ultraviolet...With the rapid advancement of optoelectronic technology,high-performance photodetectors are increasingly in demand in fields such as environmental monitoring,optical communication,and defense systems,where ultraviolet detection is critical.However,conventional semiconductor materials suffer from limited UV-visible detection capabilities owing to their narrow bandgaps and high dark currents.To address these challenges,wide-bandgap semiconductors have emerged as promising alternatives.Here,we fabricated a horizontally structured n–n heterojunction photodetector by growingβ-Ga_(2)O_(3) on Si–GaN via plasma-enhanced chemical vapor deposition.The device exhibits a self-powered photocurrent of 3.5 nA at zero bias,enabled by the photovoltaic effect of the space charge region.Under 254-nm and 365-nm illumination,it exhibits rectification behavior,achieving a responsivity of 0.475 m A/W(0 V,220??W/cm~2 at 254 nm)and 257.6 mA/W(-5 V),respectively.Notably,the photodetector demonstrates a high photocurrent-to-dark current ratio of 10~5 under-5-V bias,highlighting its potential for self-powered and high-performance UV detection applications.展开更多
基金supported by the National Natural Science Foundation of China(12304102,62574029)Natural Science Foundation of Chongqing(CSTB2023NSCQ-MSX0479)+1 种基金Science and Technology Research Project of Chongqing Education Committee(KJQN202400558)Doctoral Scientific Research Fund of Chongqing Normal University(23XLB029)。
文摘β-Ga_(2)O_(3)is a promising candidate for solarblind ultraviolet photodetection owing to its suitable bandgap of approximately 4.9 eV,excellent photoresponse characteristics,and high stability.However,the lack of a sufficient driving force within the material leads to extensive bulk charge recombination,limiting its photocurrent and thus posing significant challenges in designing high-performance Ga_(2)O_(3)-based photodetection.In this study,we propose a gradient doping strategy to achieve a Sn-doping concentration gradient along theβ-Ga_(2)O_(3)film thickness.By combining sol-gel synthesis with rapid thermal annealing,a spatially graded band structure with a full-space built-in electric field is constructed,which increases the width of band bending over a large region and is crucial for significantly enhancing carrier separation and transport in the bulk.The resulting gradient Sn-dopedβ-Ga_(2)O_(3)enables exceptional photoelectric performance without an external bias under 254 nm irradiation,including a superior responsivity of 66.88 mA W^(-1),a high detectivity of 8.12×10^(11)Jones,and a fast rise/decay time of 79/65 ms,outstanding most existing similar reported photoelectrochemical(PEC)type optoelectronic devices.Additionally,the device exhibits excellent long-term stability and enables high-resolution underwater ultraviolet imaging.This study demonstrates that the gradient doping strategy provides a feasible approach for enhancing the PEC performance ofβ-Ga_(2)O_(3)photoelectrodes.
基金Project supported by the Joints Fund of the National Natural Science Foundation of China(Grant No.U23A20349)the Young Scientists Fund of the National Natural Science Foundation of China(Grant Nos.62204126,62305171,62304113)。
文摘With the rapid advancement of optoelectronic technology,high-performance photodetectors are increasingly in demand in fields such as environmental monitoring,optical communication,and defense systems,where ultraviolet detection is critical.However,conventional semiconductor materials suffer from limited UV-visible detection capabilities owing to their narrow bandgaps and high dark currents.To address these challenges,wide-bandgap semiconductors have emerged as promising alternatives.Here,we fabricated a horizontally structured n–n heterojunction photodetector by growingβ-Ga_(2)O_(3) on Si–GaN via plasma-enhanced chemical vapor deposition.The device exhibits a self-powered photocurrent of 3.5 nA at zero bias,enabled by the photovoltaic effect of the space charge region.Under 254-nm and 365-nm illumination,it exhibits rectification behavior,achieving a responsivity of 0.475 m A/W(0 V,220??W/cm~2 at 254 nm)and 257.6 mA/W(-5 V),respectively.Notably,the photodetector demonstrates a high photocurrent-to-dark current ratio of 10~5 under-5-V bias,highlighting its potential for self-powered and high-performance UV detection applications.
