Electronic 3D printing possesses a remarkable molding ability and convenience in integrated circuits,flexible wearables,and individual automobile requirements.However,traditional 3D printing technology still struggles...Electronic 3D printing possesses a remarkable molding ability and convenience in integrated circuits,flexible wearables,and individual automobile requirements.However,traditional 3D printing technology still struggles to meet the demands of high precision and high efficiency in the process of fabricating a curved surface circuit,particularly achieving precise silver circuit molding on irregular substrates.Here,a high-precision and muti-scaled conformal manufacturing method for silver circuits is presented through the digital light processing(DLP)of ultraviolet-curable silver paste(UV-SP)with adjustable photocuring properties,enabling the successful preparation of micro-scaled conductive structure on the sharply skewed hook face.The minimum modeling depth and width of the cured silver paste can be well controlled to 10 and 88µm,respectively.Compared with traditional printing technology,the printing efficiency of complex patterns has increased by over 70%.The printed silver circuit demonstrates an exceptionally high electrical conductivity,reaching as high as 1.16×10^(7) S/m.Additionally,the UV-SP exhibits significant manufacturing efficiency and superior molding resolution compared to conventional direct ink writing and inkjet printing techniques,thereby contributing to the attainment of high precision and efficiency of conformal and micro-molding manufacturing in sensors,communication antennas,and other electronic devices based on curved substrates.展开更多
在具有蓝宝石衬底的AlN模板上外延生长了近紫外In 0.01 Ga 0.99 N/Al 0.15 Ga 0.85 N多量子阱结构,对其荧光(PL)特性进行了测量。结果显示,该结构的PL峰位能量和线宽的温度行为分别呈“S”形(降低-增加-降低)和“W”形(变窄-变宽-变窄-...在具有蓝宝石衬底的AlN模板上外延生长了近紫外In 0.01 Ga 0.99 N/Al 0.15 Ga 0.85 N多量子阱结构,对其荧光(PL)特性进行了测量。结果显示,该结构的PL峰位能量和线宽的温度行为分别呈“S”形(降低-增加-降低)和“W”形(变窄-变宽-变窄-变宽),而其激发功率行为则分别呈“N”形(增加-降低-增加)和“V”形(变窄-变宽)。这些行为表明了该量子阱结构中载流子复合发光的局域特征和量子限制斯塔克效应的库伦屏蔽效应。前者被归因于阱厚起伏所导致的阱层内的势起伏,而后者则被归因于阱/垒晶格失配所诱发的极化电场。此外,该结构的积分PL强度的温度行为也证实了其阱层内局域深度的非均一性。展开更多
基金supported by the National Natural Science Foundation of China(Nos.51972079 and 52302062)the National Key Research and Development Program of China(Nos.2022YFB370630202 and 2022YFB3706305).
文摘Electronic 3D printing possesses a remarkable molding ability and convenience in integrated circuits,flexible wearables,and individual automobile requirements.However,traditional 3D printing technology still struggles to meet the demands of high precision and high efficiency in the process of fabricating a curved surface circuit,particularly achieving precise silver circuit molding on irregular substrates.Here,a high-precision and muti-scaled conformal manufacturing method for silver circuits is presented through the digital light processing(DLP)of ultraviolet-curable silver paste(UV-SP)with adjustable photocuring properties,enabling the successful preparation of micro-scaled conductive structure on the sharply skewed hook face.The minimum modeling depth and width of the cured silver paste can be well controlled to 10 and 88µm,respectively.Compared with traditional printing technology,the printing efficiency of complex patterns has increased by over 70%.The printed silver circuit demonstrates an exceptionally high electrical conductivity,reaching as high as 1.16×10^(7) S/m.Additionally,the UV-SP exhibits significant manufacturing efficiency and superior molding resolution compared to conventional direct ink writing and inkjet printing techniques,thereby contributing to the attainment of high precision and efficiency of conformal and micro-molding manufacturing in sensors,communication antennas,and other electronic devices based on curved substrates.
文摘在具有蓝宝石衬底的AlN模板上外延生长了近紫外In 0.01 Ga 0.99 N/Al 0.15 Ga 0.85 N多量子阱结构,对其荧光(PL)特性进行了测量。结果显示,该结构的PL峰位能量和线宽的温度行为分别呈“S”形(降低-增加-降低)和“W”形(变窄-变宽-变窄-变宽),而其激发功率行为则分别呈“N”形(增加-降低-增加)和“V”形(变窄-变宽)。这些行为表明了该量子阱结构中载流子复合发光的局域特征和量子限制斯塔克效应的库伦屏蔽效应。前者被归因于阱厚起伏所导致的阱层内的势起伏,而后者则被归因于阱/垒晶格失配所诱发的极化电场。此外,该结构的积分PL强度的温度行为也证实了其阱层内局域深度的非均一性。
