The development of optoelectronic technologies demands photodetectors with miniaturization,broadband operation,high sensitivity,and low power consumption.Although 2D van der Waals(vd W)heterostructures are promising c...The development of optoelectronic technologies demands photodetectors with miniaturization,broadband operation,high sensitivity,and low power consumption.Although 2D van der Waals(vd W)heterostructures are promising candidates due to their built-in electric fields,ultrafast photocarrier separation,and tunable bandgaps,defect states limit their performance.Therefore,the modulation of the optoelectronic properties in such heterostructures is imperative.Surface charge transfer doping(SCTD)has emerged as a promising strategy for non-destructive modulation of electronic and optoelectronic characteristics in two-dimensional materials.In this work,we demonstrate the construction of high-performance p-i-n vertical heterojunction photodetectors through SCTD of MoTe_(2)/ReS_(2)heterostructure using p-type F_(4)-TCNQ.Systematic characterization reveals that the interfacial doping process effectively amplifies the built-in electric field,enhancing photogenerated carrier separation efficiency.Compared to the pristine heterojunction device,the doped photodetector exhibits remarkable visible to nearinfrared(635-1064 nm)performance.Particularly under 1064 nm illumination at zero bias,the device achieves a responsivity of 2.86 A/W and specific detectivity of 1.41×10^(12)Jones.Notably,the external quantum efficiency reaches an exceptional value of 334%compared to the initial 11.5%,while maintaining ultrafast response characteristics with rise/fall times of 11.6/15.6μs.This work provides new insights into interface engineering through molecular doping for developing high-performance vd W optoelectronic devices.展开更多
Photodetectors can convert light energy into electrical signals,so are widely used in photovoltaics,photon counting,monitoring,and imaging.Photodetectors are easy to prepare high-resolution photochips because of their...Photodetectors can convert light energy into electrical signals,so are widely used in photovoltaics,photon counting,monitoring,and imaging.Photodetectors are easy to prepare high-resolution photochips because of their small size unit integration.However,these photodetector units often exhibit poor photoelectric performance due to material defects and inadequate structures,which greatly limit the functions of devices.Designing modification strategies and micro-/nanostructures can compensate for defects,adjust the bandgap,and develop novel quantum structures,which consequently optimize photovoltaic units and revolutionize optoelectronic devices.Here,this paper aims to comprehensively elaborate on the surface/interface engineering scheme of micro-/nano-photodetectors.It starts from the fundamentals of photodetectors,such as principles,types,and parameters,and describes the influence of material selection,manufacturing techniques,and post-processing.Then,we analyse in detail the great influence of surface/interface engineering on the performance of photovoltaic devices,including surface/interface modification and micro-/nanostructural design.Finally,the applications and prospects of optoelectronic devices in various fields such as miniaturization of electronic devices,robotics,and human–computer interaction are shown.展开更多
The traditional von Neumann architecture faces inherent limitations due to the separation of memory and computa-tion,leading to high energy consumption,significant latency,and reduced operational efficiency.Neuromorph...The traditional von Neumann architecture faces inherent limitations due to the separation of memory and computa-tion,leading to high energy consumption,significant latency,and reduced operational efficiency.Neuromorphic computing,inspired by the architecture of the human brain,offers a promising alternative by integrating memory and computational func-tions,enabling parallel,high-speed,and energy-efficient information processing.Among various neuromorphic technologies,ion-modulated optoelectronic devices have garnered attention due to their excellent ionic tunability and the availability of multi-dimensional control strategies.This review provides a comprehensive overview of recent progress in ion-modulation optoelec-tronic neuromorphic devices.It elucidates the key mechanisms underlying ionic modulation of light fields,including ion migra-tion dynamics and capture and release of charge through ions.Furthermore,the synthesis of active materials and the proper-ties of these devices are analyzed in detail.The review also highlights the application of ion-modulation optoelectronic devices in artificial vision systems,neuromorphic computing,and other bionic fields.Finally,the existing challenges and future direc-tions for the development of optoelectronic neuromorphic devices are discussed,providing critical insights for advancing this promising field.展开更多
基金financial support from 2024 Domestic Visiting Scholar Program for Teachers'Professional Development in Universities(Grant No.FX2024022)National Natural Science Foundation of China(Grant No.61904043)。
文摘The development of optoelectronic technologies demands photodetectors with miniaturization,broadband operation,high sensitivity,and low power consumption.Although 2D van der Waals(vd W)heterostructures are promising candidates due to their built-in electric fields,ultrafast photocarrier separation,and tunable bandgaps,defect states limit their performance.Therefore,the modulation of the optoelectronic properties in such heterostructures is imperative.Surface charge transfer doping(SCTD)has emerged as a promising strategy for non-destructive modulation of electronic and optoelectronic characteristics in two-dimensional materials.In this work,we demonstrate the construction of high-performance p-i-n vertical heterojunction photodetectors through SCTD of MoTe_(2)/ReS_(2)heterostructure using p-type F_(4)-TCNQ.Systematic characterization reveals that the interfacial doping process effectively amplifies the built-in electric field,enhancing photogenerated carrier separation efficiency.Compared to the pristine heterojunction device,the doped photodetector exhibits remarkable visible to nearinfrared(635-1064 nm)performance.Particularly under 1064 nm illumination at zero bias,the device achieves a responsivity of 2.86 A/W and specific detectivity of 1.41×10^(12)Jones.Notably,the external quantum efficiency reaches an exceptional value of 334%compared to the initial 11.5%,while maintaining ultrafast response characteristics with rise/fall times of 11.6/15.6μs.This work provides new insights into interface engineering through molecular doping for developing high-performance vd W optoelectronic devices.
文摘Photodetectors can convert light energy into electrical signals,so are widely used in photovoltaics,photon counting,monitoring,and imaging.Photodetectors are easy to prepare high-resolution photochips because of their small size unit integration.However,these photodetector units often exhibit poor photoelectric performance due to material defects and inadequate structures,which greatly limit the functions of devices.Designing modification strategies and micro-/nanostructures can compensate for defects,adjust the bandgap,and develop novel quantum structures,which consequently optimize photovoltaic units and revolutionize optoelectronic devices.Here,this paper aims to comprehensively elaborate on the surface/interface engineering scheme of micro-/nano-photodetectors.It starts from the fundamentals of photodetectors,such as principles,types,and parameters,and describes the influence of material selection,manufacturing techniques,and post-processing.Then,we analyse in detail the great influence of surface/interface engineering on the performance of photovoltaic devices,including surface/interface modification and micro-/nanostructural design.Finally,the applications and prospects of optoelectronic devices in various fields such as miniaturization of electronic devices,robotics,and human–computer interaction are shown.
基金supported by National Natural Science Foundation of China(62174164,U23A20568,and U22A2075)National Key Research and Development Project(2021YFA1202600)+2 种基金Talent Plan of Shanghai Branch,Chinese Academy of Sciences(CASSHB-QNPD-2023-022)Ningbo Technology Project(2022A-007-C)Ningbo Key Research and Development Project(2023Z021).
文摘The traditional von Neumann architecture faces inherent limitations due to the separation of memory and computa-tion,leading to high energy consumption,significant latency,and reduced operational efficiency.Neuromorphic computing,inspired by the architecture of the human brain,offers a promising alternative by integrating memory and computational func-tions,enabling parallel,high-speed,and energy-efficient information processing.Among various neuromorphic technologies,ion-modulated optoelectronic devices have garnered attention due to their excellent ionic tunability and the availability of multi-dimensional control strategies.This review provides a comprehensive overview of recent progress in ion-modulation optoelec-tronic neuromorphic devices.It elucidates the key mechanisms underlying ionic modulation of light fields,including ion migra-tion dynamics and capture and release of charge through ions.Furthermore,the synthesis of active materials and the proper-ties of these devices are analyzed in detail.The review also highlights the application of ion-modulation optoelectronic devices in artificial vision systems,neuromorphic computing,and other bionic fields.Finally,the existing challenges and future direc-tions for the development of optoelectronic neuromorphic devices are discussed,providing critical insights for advancing this promising field.
