The traditional von Neumann architecture faces inherent limitations due to the separation of memory and computa-tion,leading to high energy consumption,significant latency,and reduced operational efficiency.Neuromorph...The traditional von Neumann architecture faces inherent limitations due to the separation of memory and computa-tion,leading to high energy consumption,significant latency,and reduced operational efficiency.Neuromorphic computing,inspired by the architecture of the human brain,offers a promising alternative by integrating memory and computational func-tions,enabling parallel,high-speed,and energy-efficient information processing.Among various neuromorphic technologies,ion-modulated optoelectronic devices have garnered attention due to their excellent ionic tunability and the availability of multi-dimensional control strategies.This review provides a comprehensive overview of recent progress in ion-modulation optoelec-tronic neuromorphic devices.It elucidates the key mechanisms underlying ionic modulation of light fields,including ion migra-tion dynamics and capture and release of charge through ions.Furthermore,the synthesis of active materials and the proper-ties of these devices are analyzed in detail.The review also highlights the application of ion-modulation optoelectronic devices in artificial vision systems,neuromorphic computing,and other bionic fields.Finally,the existing challenges and future direc-tions for the development of optoelectronic neuromorphic devices are discussed,providing critical insights for advancing this promising field.展开更多
The rapid advancement of nanotechnology has sparked much interest in applying nanoscale perovskite materials for photodetection applications.These materials are promising candidates for next-generation photodetectors(...The rapid advancement of nanotechnology has sparked much interest in applying nanoscale perovskite materials for photodetection applications.These materials are promising candidates for next-generation photodetectors(PDs)due to their unique optoelectronic properties and flexible synthesis routes.This review explores the approaches used in the development and use of optoelectronic devices made of different nanoscale perovskite architectures,including quantum dots,nanosheets,nanorods,nanowires,and nanocrystals.Through a thorough analysis of recent literature,the review also addresses common issues like the mechanisms underlying the degradation of perovskite PDs and offers perspectives on potential solutions to improve stability and scalability that impede widespread implementation.In addition,it highlights that photodetection encompasses the detection of light fields in dimensions other than light intensity and suggests potential avenues for future research to overcome these obstacles and fully realize the potential of nanoscale perovskite materials in state-of-the-art photodetection systems.This review provides a comprehensive overview of nanoscale perovskite PDs and guides future research efforts towards improved performance and wider applicability,making it a valuable resource for researchers.展开更多
Tin(Sn)-lead(Pb)mixed halide perovskites have attracted widespread interest due to their wider re-sponse wavelength and lower toxicity than lead halide perovskites,Among the preparation methods,the two-step method mor...Tin(Sn)-lead(Pb)mixed halide perovskites have attracted widespread interest due to their wider re-sponse wavelength and lower toxicity than lead halide perovskites,Among the preparation methods,the two-step method more easily controls the crystallization rate and is suitable for preparing large-area per-ovskite devices.However,the residual low-conductivity iodide layer in the two-step method can affect carrier transport and device stability,and the different crystallization rates of Sn-and Pb-based per-ovskites may result in poor film quality.Therefore,Sn-Pb mixed perovskites are mainly prepared by a one-step method.Herein,a MAPb_(0.5)Sn_(0.5)I_(3)-based self-powered photodetector without a hole transport layer is fabricated by a two-step method.By adjusting the concentration of the ascorbic acid(AA)addi-tive,the final perovskite film exhibited a pure phase without residues,and the optimal device exhibited a high responsivity(0.276 A W^(-1)),large specific detectivity(2.38×10^(12) Jones),and enhanced stability.This enhancement is mainly attributed to the inhibition of Sn2+oxidation,the control of crystal growth,and the sufficient reaction between organic ammonium salts and bottom halides due to the AA-induced pore structure.展开更多
Edge structures are ubiquitous in the processing and fabrication of various optoelectronic devices.Novel physical properties and enhanced light–matter interactions are anticipated to occur at crystal edges due to the...Edge structures are ubiquitous in the processing and fabrication of various optoelectronic devices.Novel physical properties and enhanced light–matter interactions are anticipated to occur at crystal edges due to the broken spatial translational symmetry.However,the intensity of first-order Raman scattering at crystal edges has been rarely explored,although the mechanical stress and edge characteristics have been thoroughly studied by the Raman peak shift and the spectral features of the edge-related Raman modes.Here,by taking Ga As crystal with a well-defined edge as an example,we reveal the intensity enhancement of Raman-active modes and the emergence of Raman-forbidden modes under specific polarization configurations at the edge.This is attributed to the presence of a hot spot at the edge due to the redistributed electromagnetic fields and electromagnetic wave propagations of incident laser and Raman signal near the edge,which are confirmed by the finite-difference time-domain simulations.Spatially-resolved Raman intensities of both Raman-active and Raman-forbidden modes near the edge are calculated based on the redistributed electromagnetic fields,which quantitatively reproduce the corresponding experimental results.These findings offer new insights into the intensity enhancement of Raman scattering at crystal edges and present a new avenue to manipulate light–matter interactions of crystal by manufacturing various types of edges and to characterize the edge structures in photonic and optoelectronic devices.展开更多
针对高分辨透射电子显微镜(high⁃resolution transmission electron microscope,HRTEM)所拍摄的图像存在像差造成的分辨率下降问题,本文提出一种自动测量像差参数的方案:以相对随机的方式,模仿实验像与模拟像的人工对比过程,可以求解电...针对高分辨透射电子显微镜(high⁃resolution transmission electron microscope,HRTEM)所拍摄的图像存在像差造成的分辨率下降问题,本文提出一种自动测量像差参数的方案:以相对随机的方式,模仿实验像与模拟像的人工对比过程,可以求解电镜像差。求得的像差结合改进单图重建波函数算法,可以去除图像的像差影响并获得单张图的波函数的相位像。本文运用模拟像验证后,方案与算法用于单层二硫化钼的实验HRTEM像,测得像差参数精度高,校正后的图像细节更优。本文算法计算精度好、效率高,有望应用于针对晶格像的像差测量问题。展开更多
Two-dimensional perovskite ferroelectric which strongly couple ferroelectricity with semiconducting properties are promising candidates for optoelectronic applications.However,it is still a great challenge to fabricat...Two-dimensional perovskite ferroelectric which strongly couple ferroelectricity with semiconducting properties are promising candidates for optoelectronic applications.However,it is still a great challenge to fabricate self-powered broadband photodetectors with low detection limit.Herein,we successfully realized self-powered broadband photodetection with low detection limit by using a trilayered perovskite ferroelectric(BA)_(2)EA_(2)Pb_(3)I_(10)(1,BA=n-butylamine,EA=ethylamine).Giving to its large spontaneous polarization(5.6μC/cm^(2)),1 exhibits an open-circuit voltage of 0.25 V which provide driving force to separate carriers.Combining with its low dark current(~10^(-14)A)and narrow bandgap(Eg=1.86 e V),1 demonstrates great potential on detecting the broadband weak lights.Thus,a prominent photodetection performance with high open-off ratio(~10^(5)),outstanding responsivity(>10 m A/W),and promising detectivity(>1011Jones),as well as the low detecting limit(~nW/cm^(2))among the wide wavelength from 377 nm to637 nm was realized based on the single crystal of 1.This work demonstrates the great potential of 2D perovskite ferroelectric on self-powered broadband photodetectors.展开更多
Perovskite optoelectronic devices,capitalizing on the exceptional light-matter interaction and semiconductor properties of perovskite materials,have emerged as transformative platforms for energy conversion,informatio...Perovskite optoelectronic devices,capitalizing on the exceptional light-matter interaction and semiconductor properties of perovskite materials,have emerged as transformative platforms for energy conversion,information storage,and photonic technologies.While material innovations and device engineering breakthroughs have propelled remarkable advancements,persistent challenges in operational stability,scalable manufacturing,and batch reproducibility continue to hinder commercial implementation.Recently,molecular ferroelectrics(MOFEs),as a class of materials characterized by polar crystal structures and switchable spontaneous polarization(P_(s)),offer novel pathways to regulate high-efficiency and stable perovskite optoelectronic devices.Here,we systematically review the application of MOFEs into diverse perovskite optoelectronic systems,emphasizing the synergistic effect between P_(s)and optoelectronic properties.We analyze MOFEs-based photodetectors spanning self-powered,X-ray,and polarized-light detectors,detailing how P_(s)and synergistic physical effects optimize device performance.For photovoltaic applications,we elucidate polarizationdriven performance enhancement mechanisms in perovskite solar cells(PSCs),including built-in field amplification,defect passivation,and stability improvement.Furthermore,we envisage the emerging applications of MOFEs in optoelectronic fields such as non-volatile memory,neuromorphic computing,and optical communication.Overall,this review furnishes valuable insights into optoelectronics and future energy.展开更多
基金supported by National Natural Science Foundation of China(62174164,U23A20568,and U22A2075)National Key Research and Development Project(2021YFA1202600)+2 种基金Talent Plan of Shanghai Branch,Chinese Academy of Sciences(CASSHB-QNPD-2023-022)Ningbo Technology Project(2022A-007-C)Ningbo Key Research and Development Project(2023Z021).
文摘The traditional von Neumann architecture faces inherent limitations due to the separation of memory and computa-tion,leading to high energy consumption,significant latency,and reduced operational efficiency.Neuromorphic computing,inspired by the architecture of the human brain,offers a promising alternative by integrating memory and computational func-tions,enabling parallel,high-speed,and energy-efficient information processing.Among various neuromorphic technologies,ion-modulated optoelectronic devices have garnered attention due to their excellent ionic tunability and the availability of multi-dimensional control strategies.This review provides a comprehensive overview of recent progress in ion-modulation optoelec-tronic neuromorphic devices.It elucidates the key mechanisms underlying ionic modulation of light fields,including ion migra-tion dynamics and capture and release of charge through ions.Furthermore,the synthesis of active materials and the proper-ties of these devices are analyzed in detail.The review also highlights the application of ion-modulation optoelectronic devices in artificial vision systems,neuromorphic computing,and other bionic fields.Finally,the existing challenges and future direc-tions for the development of optoelectronic neuromorphic devices are discussed,providing critical insights for advancing this promising field.
基金supported by the National Research Foundation of Korea(NRF)grant funded by the Korean government(MSIT)(No.RS-2022–00165798)Anhui Natural Science Foundation(No.2308085MF211)The authors extend their appreciation to the Deanship of Research and Graduate Studies at King Khalid University for funding this work through Large Research Project under Grant Number(R.G.P.2/491/45).
文摘The rapid advancement of nanotechnology has sparked much interest in applying nanoscale perovskite materials for photodetection applications.These materials are promising candidates for next-generation photodetectors(PDs)due to their unique optoelectronic properties and flexible synthesis routes.This review explores the approaches used in the development and use of optoelectronic devices made of different nanoscale perovskite architectures,including quantum dots,nanosheets,nanorods,nanowires,and nanocrystals.Through a thorough analysis of recent literature,the review also addresses common issues like the mechanisms underlying the degradation of perovskite PDs and offers perspectives on potential solutions to improve stability and scalability that impede widespread implementation.In addition,it highlights that photodetection encompasses the detection of light fields in dimensions other than light intensity and suggests potential avenues for future research to overcome these obstacles and fully realize the potential of nanoscale perovskite materials in state-of-the-art photodetection systems.This review provides a comprehensive overview of nanoscale perovskite PDs and guides future research efforts towards improved performance and wider applicability,making it a valuable resource for researchers.
基金supported by the National Natural Science Foun-dation of China(Nos.52025028,52332008,52372214,52202273,and U22A20137)the Priority Academic Program Development(PAPD)of Jiangsu Higher Education Institutions.
文摘Tin(Sn)-lead(Pb)mixed halide perovskites have attracted widespread interest due to their wider re-sponse wavelength and lower toxicity than lead halide perovskites,Among the preparation methods,the two-step method more easily controls the crystallization rate and is suitable for preparing large-area per-ovskite devices.However,the residual low-conductivity iodide layer in the two-step method can affect carrier transport and device stability,and the different crystallization rates of Sn-and Pb-based per-ovskites may result in poor film quality.Therefore,Sn-Pb mixed perovskites are mainly prepared by a one-step method.Herein,a MAPb_(0.5)Sn_(0.5)I_(3)-based self-powered photodetector without a hole transport layer is fabricated by a two-step method.By adjusting the concentration of the ascorbic acid(AA)addi-tive,the final perovskite film exhibited a pure phase without residues,and the optimal device exhibited a high responsivity(0.276 A W^(-1)),large specific detectivity(2.38×10^(12) Jones),and enhanced stability.This enhancement is mainly attributed to the inhibition of Sn2+oxidation,the control of crystal growth,and the sufficient reaction between organic ammonium salts and bottom halides due to the AA-induced pore structure.
基金Project supported by the National Key Research and Development Program of China(Grant No.2023YFA1407000)the Strategic Priority Research Program of Chinese Academy of Sciences(Grant No.XDB0460000)+4 种基金the National Natural Science Foundation of China(Grant Nos.12322401,12127807,and 12393832)CAS Key Research Program of Frontier Sciences(Grant No.ZDBS-LY-SLH004)Beijing Nova Program(Grant No.20230484301)Youth Innovation Promotion Association,Chinese Academy of Sciences(Grant No.2023125)CAS Project for Young Scientists in Basic Research(Grant No.YSBR-026)。
文摘Edge structures are ubiquitous in the processing and fabrication of various optoelectronic devices.Novel physical properties and enhanced light–matter interactions are anticipated to occur at crystal edges due to the broken spatial translational symmetry.However,the intensity of first-order Raman scattering at crystal edges has been rarely explored,although the mechanical stress and edge characteristics have been thoroughly studied by the Raman peak shift and the spectral features of the edge-related Raman modes.Here,by taking Ga As crystal with a well-defined edge as an example,we reveal the intensity enhancement of Raman-active modes and the emergence of Raman-forbidden modes under specific polarization configurations at the edge.This is attributed to the presence of a hot spot at the edge due to the redistributed electromagnetic fields and electromagnetic wave propagations of incident laser and Raman signal near the edge,which are confirmed by the finite-difference time-domain simulations.Spatially-resolved Raman intensities of both Raman-active and Raman-forbidden modes near the edge are calculated based on the redistributed electromagnetic fields,which quantitatively reproduce the corresponding experimental results.These findings offer new insights into the intensity enhancement of Raman scattering at crystal edges and present a new avenue to manipulate light–matter interactions of crystal by manufacturing various types of edges and to characterize the edge structures in photonic and optoelectronic devices.
文摘针对高分辨透射电子显微镜(high⁃resolution transmission electron microscope,HRTEM)所拍摄的图像存在像差造成的分辨率下降问题,本文提出一种自动测量像差参数的方案:以相对随机的方式,模仿实验像与模拟像的人工对比过程,可以求解电镜像差。求得的像差结合改进单图重建波函数算法,可以去除图像的像差影响并获得单张图的波函数的相位像。本文运用模拟像验证后,方案与算法用于单层二硫化钼的实验HRTEM像,测得像差参数精度高,校正后的图像细节更优。本文算法计算精度好、效率高,有望应用于针对晶格像的像差测量问题。
基金financially supported by the National Natural Science Foundation of China(Nos.22435005,22193042,21921001,22305105,52202194,22201284)Natural Science Foundation of Jiangxi Province(No.20224BAB213003)+1 种基金the Natural Science Foundation of Fujian Province(No.2023J05076)Jiangxi Provincial Education Department Science and Technology Research Foundation(No.GJJ2200384)。
文摘Two-dimensional perovskite ferroelectric which strongly couple ferroelectricity with semiconducting properties are promising candidates for optoelectronic applications.However,it is still a great challenge to fabricate self-powered broadband photodetectors with low detection limit.Herein,we successfully realized self-powered broadband photodetection with low detection limit by using a trilayered perovskite ferroelectric(BA)_(2)EA_(2)Pb_(3)I_(10)(1,BA=n-butylamine,EA=ethylamine).Giving to its large spontaneous polarization(5.6μC/cm^(2)),1 exhibits an open-circuit voltage of 0.25 V which provide driving force to separate carriers.Combining with its low dark current(~10^(-14)A)and narrow bandgap(Eg=1.86 e V),1 demonstrates great potential on detecting the broadband weak lights.Thus,a prominent photodetection performance with high open-off ratio(~10^(5)),outstanding responsivity(>10 m A/W),and promising detectivity(>1011Jones),as well as the low detecting limit(~nW/cm^(2))among the wide wavelength from 377 nm to637 nm was realized based on the single crystal of 1.This work demonstrates the great potential of 2D perovskite ferroelectric on self-powered broadband photodetectors.
基金financially supported by the National Natural Science Foundation of China(No.52302229)the State Key Laboratory of Photovoltaic Science and Technology of China(No.202401030301)the Key Lab of Modern Optical Technologies of Education Ministry of China,Soochow University(No.KJS2425)。
文摘Perovskite optoelectronic devices,capitalizing on the exceptional light-matter interaction and semiconductor properties of perovskite materials,have emerged as transformative platforms for energy conversion,information storage,and photonic technologies.While material innovations and device engineering breakthroughs have propelled remarkable advancements,persistent challenges in operational stability,scalable manufacturing,and batch reproducibility continue to hinder commercial implementation.Recently,molecular ferroelectrics(MOFEs),as a class of materials characterized by polar crystal structures and switchable spontaneous polarization(P_(s)),offer novel pathways to regulate high-efficiency and stable perovskite optoelectronic devices.Here,we systematically review the application of MOFEs into diverse perovskite optoelectronic systems,emphasizing the synergistic effect between P_(s)and optoelectronic properties.We analyze MOFEs-based photodetectors spanning self-powered,X-ray,and polarized-light detectors,detailing how P_(s)and synergistic physical effects optimize device performance.For photovoltaic applications,we elucidate polarizationdriven performance enhancement mechanisms in perovskite solar cells(PSCs),including built-in field amplification,defect passivation,and stability improvement.Furthermore,we envisage the emerging applications of MOFEs in optoelectronic fields such as non-volatile memory,neuromorphic computing,and optical communication.Overall,this review furnishes valuable insights into optoelectronics and future energy.
