The design and fabrication of a RF MEMS switch is reported for the first time in China.The switching element consists of a thin metallic membrane,which has the metal-isolator-metal contact and a capacitive shunt switc...The design and fabrication of a RF MEMS switch is reported for the first time in China.The switching element consists of a thin metallic membrane,which has the metal-isolator-metal contact and a capacitive shunt switch as single-pole single-throw.When an electrostatic potential is applied to the membrane and the bottom electrode,the attractive electrostatic force pulls the metal membrane down onto the bottom dielectric.The switch characteristics,such as insertion loss and isolation,depend on the off and on-capacitance.The test results are as follows:the pulldown voltage is about 20V;the insertion loss is less than 0 69dB from DC to 20GHz in the up-state;the isolation is more than 13dB from 14 to 18GHz and 16dB from 18 to 20GHz in the down-state.展开更多
文摘The design and fabrication of a RF MEMS switch is reported for the first time in China.The switching element consists of a thin metallic membrane,which has the metal-isolator-metal contact and a capacitive shunt switch as single-pole single-throw.When an electrostatic potential is applied to the membrane and the bottom electrode,the attractive electrostatic force pulls the metal membrane down onto the bottom dielectric.The switch characteristics,such as insertion loss and isolation,depend on the off and on-capacitance.The test results are as follows:the pulldown voltage is about 20V;the insertion loss is less than 0 69dB from DC to 20GHz in the up-state;the isolation is more than 13dB from 14 to 18GHz and 16dB from 18 to 20GHz in the down-state.
