Simulating the total ionizing dose(TID)of an electrical system using transistor-level models can be difficult and expensive,particularly for digital-integrated circuits(ICs).In this study,a method for modeling TID eff...Simulating the total ionizing dose(TID)of an electrical system using transistor-level models can be difficult and expensive,particularly for digital-integrated circuits(ICs).In this study,a method for modeling TID effects in complementary metaloxide semiconductor(CMOS)digital ICs based on the input/output buffer information specification(IBIS)was proposed.The digital IC was first divided into three parts based on its internal structure:the input buffer,output buffer,and functional area.Each of these three parts was separately modeled.Using the IBIS model,the transistor V-I characteristic curves of the buffers were processed,and the physical parameters were extracted and modeled using VHDL-AMS.In the functional area,logic functions were modeled in VHDL according to the data sheet.A golden digital IC model was developed by combining the input buffer,output buffer,and functional area models.Furthermore,the golden ratio was reconstructed based on TID experimental data,enabling the assessment of TID effects on the threshold voltage,carrier mobility,and time series of the digital IC.TID experiments were conducted using a CMOS non-inverting multiplexer,NC7SZ157,and the results were compared with the simulation results,which showed that the relative errors were less than 2%at each dose point.This confirms the practicality and accuracy of the proposed modeling method.The TID effect model for digital ICs developed using this modeling technique includes both the logical function of the IC and changes in electrical properties and functional degradation impacted by TID,which has potential applications in the design of radiation-hardening tolerance in digital ICs.展开更多
The reconstruction of muon energies is crucial for the data analysis of neutrino experiments using large water Cherenkov detectors,but the resolution for muon energy reconstruction using traditional methods is poor.He...The reconstruction of muon energies is crucial for the data analysis of neutrino experiments using large water Cherenkov detectors,but the resolution for muon energy reconstruction using traditional methods is poor.Here,we propose a revised approach to remove noisy optical modules along the track produced by the propagation of muons through water.The number of photons on the optical modules is first corrected by the attenuation properties of light in water.Then the difference in time between the observed optical modules and the expected ones is determined based on the geometry of the triggered optical modules.Finally,the standard of correction is measured by the ratio of photon number before and after correction.Optical modules selection conditions were optimized according to these parameters,with most noisy optical modules successfully removed,improving the resolution of muon energy reconstruction.展开更多
地基甚高能(very high energy, VHE)γ射线天文观测成果的取得,很大程度上与成像大气切伦科夫望远镜技术发展密不可分。大气切伦科夫技术概念于20世纪50年代提出,20世纪80年代末和20世纪90年代初取得重要突破,21世纪初逐步发展成熟。立...地基甚高能(very high energy, VHE)γ射线天文观测成果的取得,很大程度上与成像大气切伦科夫望远镜技术发展密不可分。大气切伦科夫技术概念于20世纪50年代提出,20世纪80年代末和20世纪90年代初取得重要突破,21世纪初逐步发展成熟。立体成像大气切伦科夫望远镜阵列以其良好的角度分辨率、能量分辨能力和优异的γ/p鉴别能力成为地基VHEγ射线天文观测关键探测技术,在现有和计划中的γ射线地基探测中被广泛使用。对成像大气切伦科夫技术发展历史和现状作了概述,包括地基VHEγ射线探测现状、大气切伦科夫望远镜探测原理、技术演进、目前典型的成像大气切伦科夫望远镜阵列、未来发展等内容。展开更多
基金This work was supported by the special fund of the State Key Laboratory of Intense Pulsed Radiation Simulation and Effect(No.SKLIPR2011).
文摘Simulating the total ionizing dose(TID)of an electrical system using transistor-level models can be difficult and expensive,particularly for digital-integrated circuits(ICs).In this study,a method for modeling TID effects in complementary metaloxide semiconductor(CMOS)digital ICs based on the input/output buffer information specification(IBIS)was proposed.The digital IC was first divided into three parts based on its internal structure:the input buffer,output buffer,and functional area.Each of these three parts was separately modeled.Using the IBIS model,the transistor V-I characteristic curves of the buffers were processed,and the physical parameters were extracted and modeled using VHDL-AMS.In the functional area,logic functions were modeled in VHDL according to the data sheet.A golden digital IC model was developed by combining the input buffer,output buffer,and functional area models.Furthermore,the golden ratio was reconstructed based on TID experimental data,enabling the assessment of TID effects on the threshold voltage,carrier mobility,and time series of the digital IC.TID experiments were conducted using a CMOS non-inverting multiplexer,NC7SZ157,and the results were compared with the simulation results,which showed that the relative errors were less than 2%at each dose point.This confirms the practicality and accuracy of the proposed modeling method.The TID effect model for digital ICs developed using this modeling technique includes both the logical function of the IC and changes in electrical properties and functional degradation impacted by TID,which has potential applications in the design of radiation-hardening tolerance in digital ICs.
基金supported by Institute of High Energy Physics (E25156U110)the Sichuan Department of Science and Technology (2023YFSY0014).
文摘The reconstruction of muon energies is crucial for the data analysis of neutrino experiments using large water Cherenkov detectors,but the resolution for muon energy reconstruction using traditional methods is poor.Here,we propose a revised approach to remove noisy optical modules along the track produced by the propagation of muons through water.The number of photons on the optical modules is first corrected by the attenuation properties of light in water.Then the difference in time between the observed optical modules and the expected ones is determined based on the geometry of the triggered optical modules.Finally,the standard of correction is measured by the ratio of photon number before and after correction.Optical modules selection conditions were optimized according to these parameters,with most noisy optical modules successfully removed,improving the resolution of muon energy reconstruction.
文摘地基甚高能(very high energy, VHE)γ射线天文观测成果的取得,很大程度上与成像大气切伦科夫望远镜技术发展密不可分。大气切伦科夫技术概念于20世纪50年代提出,20世纪80年代末和20世纪90年代初取得重要突破,21世纪初逐步发展成熟。立体成像大气切伦科夫望远镜阵列以其良好的角度分辨率、能量分辨能力和优异的γ/p鉴别能力成为地基VHEγ射线天文观测关键探测技术,在现有和计划中的γ射线地基探测中被广泛使用。对成像大气切伦科夫技术发展历史和现状作了概述,包括地基VHEγ射线探测现状、大气切伦科夫望远镜探测原理、技术演进、目前典型的成像大气切伦科夫望远镜阵列、未来发展等内容。
