Human health is seriously jeopardized by infections caused by pathogenic microorganisms.The current traditional disinfection technologies have many defects,such as producing harmful by-products,being affected by water...Human health is seriously jeopardized by infections caused by pathogenic microorganisms.The current traditional disinfection technologies have many defects,such as producing harmful by-products,being affected by water turbidity,and high energy consumption.The growing concern for microbial safety has brought non-thermal plasma(NTP)disinfection technology into the spotlight.NTP is a promising disinfection technology with advantages such as environmental protection,safety,room temperature disinfection,short disinfection cycle,and wide applicability.Researchers are continuously optimizing NTP reactions to improve disinfection efficiency.This paper provides an integrated analysis of both plasma disinfection in water and plasma-activated water(PAW)disinfection on object surfaces.NTP can directly treat bacterial contaminated water,and can also be employed to produce PAW as a disinfectant for treating bacteria on surfaces.This review introduces the fundamental concepts and commonly used equipment related to NTP technology,analyzes the influencing factors and mechanisms of disinfection,and concludes by outlining the future directions of NTP technology in the field of disinfection.We hope to provide a reference for the research and practice of bacterial pollution issues.展开更多
Atomic layer deposition(ALD)is extensively used to fabricate doped dielectrics due to its ability to deposit conformal films with atomic-scale thickness control.Al-doped TiO_(2)(ATO)is a promising high-k dielectric fo...Atomic layer deposition(ALD)is extensively used to fabricate doped dielectrics due to its ability to deposit conformal films with atomic-scale thickness control.Al-doped TiO_(2)(ATO)is a promising high-k dielectric for dynamic random access memory(DRAM)applications,offering a high dielectric constant with a remarkable leakage-lowering effect by Al acceptor doping.However,ATO fabrication via conventional supercycle-based ALD suffers from severe crystallinity loss during the growth of TiO_(2) upon Al doping owing to the dopant-induced lattice disorder.In addition,Al doping cannot reduce any inherent O vacancies(V_(O))of TiO_(2),although the original purpose of doping was to address the n-type nature caused by V_(O).To resolve these limitations,we propose a single-step,in-situ Ar/O_(2) post-doping plasma(PDP)process immediately after the Al dopant incorporation.Using the PDP process,simultaneous atomic-scale dopant migration-mediated crystallization and V_(O) annihilation were successfully initiated.Thus,the surface concentration of the dopant decreased,reducing the dopant-induced lattice distortion,while promoting the highly crystallized seed layer-like surface.Consequently,strong rutile-phase recovery was accompanied by enhanced lattice-matched growth.In addition,the PDP process significantly lowers the V_(O)-to-lattice oxygen ratio by facilitating the recombination between reactive O species and V_(O),increasing the corresponding 0.4 e V of conduction band offset(CBO).Despite the common trade-off between the dielectric constant and leakage,the Pt/PDP-ATO/Ru capacitor exhibited a simultaneous 30%increase in dielectric constant and up to a 1.6-order reduction in leakage current density.展开更多
基金support by National Natural Science Foundation of China(No.22006069)Natural Science Foundation of Jiangsu Province in China(No.BK20200801)Jiangsu Special Foundation on Technology Innovation of Carbon Dioxide Peaking and Carbon Neutrality(No.BK20220016).
文摘Human health is seriously jeopardized by infections caused by pathogenic microorganisms.The current traditional disinfection technologies have many defects,such as producing harmful by-products,being affected by water turbidity,and high energy consumption.The growing concern for microbial safety has brought non-thermal plasma(NTP)disinfection technology into the spotlight.NTP is a promising disinfection technology with advantages such as environmental protection,safety,room temperature disinfection,short disinfection cycle,and wide applicability.Researchers are continuously optimizing NTP reactions to improve disinfection efficiency.This paper provides an integrated analysis of both plasma disinfection in water and plasma-activated water(PAW)disinfection on object surfaces.NTP can directly treat bacterial contaminated water,and can also be employed to produce PAW as a disinfectant for treating bacteria on surfaces.This review introduces the fundamental concepts and commonly used equipment related to NTP technology,analyzes the influencing factors and mechanisms of disinfection,and concludes by outlining the future directions of NTP technology in the field of disinfection.We hope to provide a reference for the research and practice of bacterial pollution issues.
基金supported by the Samsung Electronics Co.,Ltd.(ISO230414-05954-01)Basic Science Research Program through the National Research Foundation of Korea(NRF)funded by the Ministry of Education(NRF2021R1A6A1A03039981)+2 种基金the Korea Institute for Advancement of Technology(KIAT)Grant,funded by the Korea Government(MOTIE)(P0023703,HRD Program for Industrial Innovation)The computations were performed at the Korea Institute of Science and Technology Information(KISTI)National Supercomputing Center(KSC-2024-CRE-0316)the UNIST Supercomputing Center。
文摘Atomic layer deposition(ALD)is extensively used to fabricate doped dielectrics due to its ability to deposit conformal films with atomic-scale thickness control.Al-doped TiO_(2)(ATO)is a promising high-k dielectric for dynamic random access memory(DRAM)applications,offering a high dielectric constant with a remarkable leakage-lowering effect by Al acceptor doping.However,ATO fabrication via conventional supercycle-based ALD suffers from severe crystallinity loss during the growth of TiO_(2) upon Al doping owing to the dopant-induced lattice disorder.In addition,Al doping cannot reduce any inherent O vacancies(V_(O))of TiO_(2),although the original purpose of doping was to address the n-type nature caused by V_(O).To resolve these limitations,we propose a single-step,in-situ Ar/O_(2) post-doping plasma(PDP)process immediately after the Al dopant incorporation.Using the PDP process,simultaneous atomic-scale dopant migration-mediated crystallization and V_(O) annihilation were successfully initiated.Thus,the surface concentration of the dopant decreased,reducing the dopant-induced lattice distortion,while promoting the highly crystallized seed layer-like surface.Consequently,strong rutile-phase recovery was accompanied by enhanced lattice-matched growth.In addition,the PDP process significantly lowers the V_(O)-to-lattice oxygen ratio by facilitating the recombination between reactive O species and V_(O),increasing the corresponding 0.4 e V of conduction band offset(CBO).Despite the common trade-off between the dielectric constant and leakage,the Pt/PDP-ATO/Ru capacitor exhibited a simultaneous 30%increase in dielectric constant and up to a 1.6-order reduction in leakage current density.
