We have developed a low-damage photolithography method for magnetically doped(Bi,Sb)_(2)Te_(3)quantum anomalous Hall(QAH) thin films incorporating an additional resist layer of poly(methyl methacrylate)(PMMA). By perf...We have developed a low-damage photolithography method for magnetically doped(Bi,Sb)_(2)Te_(3)quantum anomalous Hall(QAH) thin films incorporating an additional resist layer of poly(methyl methacrylate)(PMMA). By performing control experiments on the transport properties of five devices at varied gate voltages(V_(g)s), we revealed that the modified photolithography method enables fabricating QAH devices with the transport and magnetic properties unaffected by fabrication process. Our experiment represents a step towards the production of novel micro-structured electronic devices based on the dissipationless QAH chiral edge states.展开更多
The topological quantum phases in antiferromagnetic topological insulator MnBi_(2)Te_(4)hold promise for next-generation spintronics,but their experimental realization has been constrained by challenges in preparing h...The topological quantum phases in antiferromagnetic topological insulator MnBi_(2)Te_(4)hold promise for next-generation spintronics,but their experimental realization has been constrained by challenges in preparing high-quality devices.In this work,we report a new wax-assisted exfoliation and transfer method that enables the fabrication of MnBi_(2)Te_(4)heterostructures with both surfaces encapsulated by AlO_(x).This strategy strongly enhances the transport performances of the topological quantum phases in MnBi_(2)Te_(4)flakes,which is attributed to the enhancement of magnetism by the AlO_(x)layer.We observe the robust axion insulator state in even-layer device with wide zero Hall plateau and high longitudinal resistivity,and the quantum anomalous Hall effect in odd-layer device with large hysteresis and sharp plateau transition.These results demonstrate that the combination of wax exfoliation and AlO_(x)encapsulation provides great potentials for exploring novel topological quantum phenomena and potential applications in MnBi2Te4 and other two-dimensional materials.展开更多
基金supported by the National Key Research and Development Program of China (Grant No. 2018YFA0307100)the Basic Science Center Project of the National Natural Science Foundation of China (Grant No. 52388201)+4 种基金the National Natural Science Foundation of China (Grant Nos. 12274453 and 92065206)the Innovation Program for Quantum Science and Technology (Grant No. 2021ZD0302502)supported by Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics (Grant No. KF202204)supported by the New Cornerstone Science Foundation through the New Cornerstone Investigator Programthe XPLORER PRIZE。
文摘We have developed a low-damage photolithography method for magnetically doped(Bi,Sb)_(2)Te_(3)quantum anomalous Hall(QAH) thin films incorporating an additional resist layer of poly(methyl methacrylate)(PMMA). By performing control experiments on the transport properties of five devices at varied gate voltages(V_(g)s), we revealed that the modified photolithography method enables fabricating QAH devices with the transport and magnetic properties unaffected by fabrication process. Our experiment represents a step towards the production of novel micro-structured electronic devices based on the dissipationless QAH chiral edge states.
基金supported by the Basic Science Center Project of the National Natural Science Foundation of China(52388201 and 12274453)the Innovation program for Quantum Science and Technology(2021ZD0302502 and 2021ZD0302502)+1 种基金the Beijing Nova Program(20240484574)the New Cornerstone Science Foundation through the New Cornerstone Investigator Program.
文摘The topological quantum phases in antiferromagnetic topological insulator MnBi_(2)Te_(4)hold promise for next-generation spintronics,but their experimental realization has been constrained by challenges in preparing high-quality devices.In this work,we report a new wax-assisted exfoliation and transfer method that enables the fabrication of MnBi_(2)Te_(4)heterostructures with both surfaces encapsulated by AlO_(x).This strategy strongly enhances the transport performances of the topological quantum phases in MnBi_(2)Te_(4)flakes,which is attributed to the enhancement of magnetism by the AlO_(x)layer.We observe the robust axion insulator state in even-layer device with wide zero Hall plateau and high longitudinal resistivity,and the quantum anomalous Hall effect in odd-layer device with large hysteresis and sharp plateau transition.These results demonstrate that the combination of wax exfoliation and AlO_(x)encapsulation provides great potentials for exploring novel topological quantum phenomena and potential applications in MnBi2Te4 and other two-dimensional materials.
基金supported by the Innovation Program for Quantum Science and Technology (2021ZD0302502)the National Key R&D Program of China (2018YFA0307100 and 2022YFA1403700)+4 种基金the National Natural Science Foundation of China (51991340, 21975140, 11925402, and 12274453)supported by Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics (KF202204)supported by the Guangdong Province (2020KCXTD001 and 2016ZT06D348)Center for Computational Science and Engineering of SUSTechsupported by the New Cornerstone Science Foundation through the New Cornerstone Investigator Program and the XPLORER PRIZE
