In the last few years,research on advanced ultrafast photonic devices has attracted great interest from laser physicists.As a semiconductor material with excellent nonlinear saturation absorption characteristics,Ga As...In the last few years,research on advanced ultrafast photonic devices has attracted great interest from laser physicists.As a semiconductor material with excellent nonlinear saturation absorption characteristics,Ga As has been used in solidstate and fiber lasers as a mode-locker.However,the pulse widths that have been reported in the searchable published literature are all long and the shortest is tens of picoseconds.Femtosecond pulse widths,desired for a variety of applications,have not yet been reported in Ga As-based pulsed lasers.In this work,we further explore the nonlinear characteristics of Ga As that has been magnetron sputtered onto the surface of a tapered fiber and its application in the generation of femtosecond lasing via effective dispersion optimization and nonlinearity management.With the enhanced interaction between evanescent waves and Ga As nanosheets,mode-locked soliton pulses as short as 830 fs are generated at repetition rates of 4.64 MHz.As far as we know,this is the first time that femtosecond-level pulses have been generated with a Ga As-based saturable absorber.In addition,soliton molecules,including in the dual-pulse state,are also realized under stronger pumping.This work demonstrates that Ga As-based photonic devices have good application prospects in effective polymorphous ultrashort pulsed laser generation.展开更多
Wide-bandgap gallium oxide(Ga_(2)O_(3))is one of the most promising semiconductor materials for solar-blind(200 nm to 280 nm)photodetection.In its amorphous form,amorphous gallium oxide(a-Ga_(2)O_(3))maintains its int...Wide-bandgap gallium oxide(Ga_(2)O_(3))is one of the most promising semiconductor materials for solar-blind(200 nm to 280 nm)photodetection.In its amorphous form,amorphous gallium oxide(a-Ga_(2)O_(3))maintains its intrinsic optoelectronic properties while can be prepared at a low growth temperature,thus it is compatible with Si integrated circuits(ICs)technology.Herein,the a-Ga_(2)O_(3) film is directly deposited on pre-fabricated Au interdigital electrodes by plasma enhanced atomic layer deposition(PE-ALD)at a growth temperature of 250°C.The stoichiometric a-Ga_(2)O_(3) thin film with a low defect density is achieved owing to the mild PE-ALD condition.As a result,the fabricated Au/a-Ga_(2)O_(3)/Au photodetector shows a fast time response,high responsivity,and excellent wavelength selectivity for solar-blind photodetection.Furthermore,an ultra-thin MgO layer is deposited by PE-ALD to passivate the Au/a-Ga_(2)O_(3)/Au interface,resulting in the responsivity of 788 A/W(under 254 nm at 10 V),a 250-nm-to-400-nm rejection ratio of 9.2×10^(3),and the rise time and the decay time of 32 ms and 6 ms,respectively.These results demonstrate that the a-Ga_(2)O_(3) film grown by PE-ALD is a promising candidate for high-performance solar-blind photodetection and potentially can be integrated with Si ICs for commercial production.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.12164030)Young Science and Technology Talents of Inner Mongolia,China(Grant No.NJYT22101)+1 种基金the Central Government Guides Local Science,the Technology Development Fund Projects(Grant No.2023ZY0005)the Science and Technology Plan Projects of Inner Mongolia Autonomous Region of China(Grant No.2023KYPT0012)。
文摘In the last few years,research on advanced ultrafast photonic devices has attracted great interest from laser physicists.As a semiconductor material with excellent nonlinear saturation absorption characteristics,Ga As has been used in solidstate and fiber lasers as a mode-locker.However,the pulse widths that have been reported in the searchable published literature are all long and the shortest is tens of picoseconds.Femtosecond pulse widths,desired for a variety of applications,have not yet been reported in Ga As-based pulsed lasers.In this work,we further explore the nonlinear characteristics of Ga As that has been magnetron sputtered onto the surface of a tapered fiber and its application in the generation of femtosecond lasing via effective dispersion optimization and nonlinearity management.With the enhanced interaction between evanescent waves and Ga As nanosheets,mode-locked soliton pulses as short as 830 fs are generated at repetition rates of 4.64 MHz.As far as we know,this is the first time that femtosecond-level pulses have been generated with a Ga As-based saturable absorber.In addition,soliton molecules,including in the dual-pulse state,are also realized under stronger pumping.This work demonstrates that Ga As-based photonic devices have good application prospects in effective polymorphous ultrashort pulsed laser generation.
基金This work was supported by the National Natural Science Foundation of China under Grant No.21872019 and the Innovation Group Project of Sichuan Province under Grant No.20CXTD0090This work was also partly supported by the Slovenian Research Agency under Grants No.P2-0412 and No.J2-2498 for A.Mavric and M.Valant,and No.Z1-3189 for N.Pastukhova。
文摘Wide-bandgap gallium oxide(Ga_(2)O_(3))is one of the most promising semiconductor materials for solar-blind(200 nm to 280 nm)photodetection.In its amorphous form,amorphous gallium oxide(a-Ga_(2)O_(3))maintains its intrinsic optoelectronic properties while can be prepared at a low growth temperature,thus it is compatible with Si integrated circuits(ICs)technology.Herein,the a-Ga_(2)O_(3) film is directly deposited on pre-fabricated Au interdigital electrodes by plasma enhanced atomic layer deposition(PE-ALD)at a growth temperature of 250°C.The stoichiometric a-Ga_(2)O_(3) thin film with a low defect density is achieved owing to the mild PE-ALD condition.As a result,the fabricated Au/a-Ga_(2)O_(3)/Au photodetector shows a fast time response,high responsivity,and excellent wavelength selectivity for solar-blind photodetection.Furthermore,an ultra-thin MgO layer is deposited by PE-ALD to passivate the Au/a-Ga_(2)O_(3)/Au interface,resulting in the responsivity of 788 A/W(under 254 nm at 10 V),a 250-nm-to-400-nm rejection ratio of 9.2×10^(3),and the rise time and the decay time of 32 ms and 6 ms,respectively.These results demonstrate that the a-Ga_(2)O_(3) film grown by PE-ALD is a promising candidate for high-performance solar-blind photodetection and potentially can be integrated with Si ICs for commercial production.
