A launching system with a filter cartridge structure was proposed to improve the muzzle velocity of the projectile.The combustion chamber of the launching system is divided into two fixed chambers,one is located in th...A launching system with a filter cartridge structure was proposed to improve the muzzle velocity of the projectile.The combustion chamber of the launching system is divided into two fixed chambers,one is located in the breech chamber,and the other is arranged in the barrel.The breech chamber charge was ignited first,and the charges in the auxiliary chambers were ignited by the high-temperature,highpressure combustible gas trailing the projectile.In this way,the combustible gas in the auxiliary chambers could compensate for the pressure drop caused by the movement of the projectile.The proposed device features the advantage of launching a projectile with high muzzle velocity without exceeding the maximum pressure in the chamber.In order to obtain some internal ballistic characteristics of the launch system,some critical structure,such as the length of the filter cartridge auxiliary charge,the combustion degree of the propellant in the chamber,and the length of the barrel,are discussed.The experimental results show that with the increased auxiliary charge length,a pressure plateau or even a secondary peak pressure can be formed,which is less than the peak pressure.The projectile velocity increased by 23.57%,14.64%,and 7.65%when the diaphragm thickness was 0 mm,1 mm,and2 mm,respectively.The muzzle velocity of the projectile can be increased by 13.42%by increasing the length of the barrel.Under the same charge condition,with the increase of barrel length,the energy utilization rate of propellant increases by 28.64%.展开更多
For modern scaling devices,multiple cell upsets(MCUs)have become a major threat to high-reliability field-programmable gate array(FPGA)-based systems.Thus,both performing the worst-case irradiation tests to provide th...For modern scaling devices,multiple cell upsets(MCUs)have become a major threat to high-reliability field-programmable gate array(FPGA)-based systems.Thus,both performing the worst-case irradiation tests to provide the actual MCU response of devices and proposing an effective MCU distinction method are urgently needed.In this study,high-and medium-energy heavy-ion irradiations for the configuration random-access memory of 28 nm FPGAs are performed.An MCU extraction method supported by theoretical predictions is proposed to study the MCU sizes,shapes,and frequencies in detail.Based on the extraction method,the different percentages,and orientations of the large MCUs in both the azimuth and zenith directions determine the worse irradiation response of the FPGAs.The extracted largest 9-bit MCUs indicate that high-energy heavy ions can induce more severe failures than medium-energy ones.The results show that both the use of high-energy heavy ions during MCU evaluations and effective protection for the application of high-density 28 nm FPGAs in space are extremely necessary.展开更多
Multiple-bit upsets(MBUs)have become a threat to modern advanced field-programmable gate arrays(FPGAs)applications in radiation environments.Hence,many investigations have been conducted using mediumenergy heavy ions ...Multiple-bit upsets(MBUs)have become a threat to modern advanced field-programmable gate arrays(FPGAs)applications in radiation environments.Hence,many investigations have been conducted using mediumenergy heavy ions to study the effects of MBU radiation.However,high-energy heavy ions(HEHIs)greatly affect the size and percentage of MBUs because their ionizationtrack structures differ from those of medium-energy heavy ions.In this study,the different impacts of high-energy and medium-energy heavy ions on MBUs in 28 nm FPGAs as well as their mechanisms are thoroughly investigated.With the Geant4 calculation,more serious energy effects of HEHIs on MBU scales were successfully demonstrated.In addition,we identified worse MBU responses resulting from lowered voltages.The MBU orientation effect was observed in the radiation of different dimensions.The broadened ionization tracks for tilted tests in different dimensions could result in different MBU sizes.The results also revealed that the ionization tracks of tilted HEHIs have more severe impacts on the MBU scales than mediumenergy heavy ions with much higher linear energy transfer.Therefore,comprehensive radiation with HEHIs is indispensable for effective hardened designs to apply highdensity 28 nm FPGAs in deep space exploration.展开更多
The variations of single event transient(SET)pulse width of high-LET heavy ion irradiation in 16-nm-thick bulk silicon fin field-effect transistor(Fin FET)inverter chains with different driven strengths are measured a...The variations of single event transient(SET)pulse width of high-LET heavy ion irradiation in 16-nm-thick bulk silicon fin field-effect transistor(Fin FET)inverter chains with different driven strengths are measured at different temperatures.Three-dimensional(3D)technology computer-aided design simulations are carried out to study the SET pulse width and saturation current varying with temperature.Experimental and simulation results indicate that the increase in temperature will enhance the parasitic bipolar effect of bulk Fin FET technology,resulting in the increase of SET pulse width.On the other hand,the increase of inverter driven strength will change the layout topology,which has a complex influence on the SET temperature effects of Fin FET inverter chains.The experimental and simulation results show that the device with the strongest driven strength has the least dependence on temperature.展开更多
A dual double interlocked storage cell(DICE)interleaving layout static random-access memory(SRAM)is designed and manufactured based on 65 nm bulk complementary metal oxide semiconductor technology.The single event ups...A dual double interlocked storage cell(DICE)interleaving layout static random-access memory(SRAM)is designed and manufactured based on 65 nm bulk complementary metal oxide semiconductor technology.The single event upset(SEU)cross sections of this memory are obtained via heavy ion irradiation with a linear energy transfer(LET)value ranging from 1.7 to 83.4 MeV/(mg/cm^(2)).Experimental results show that the upset threshold(LETth)of a 4 KB block is approximately 6 MeV/(mg/cm^(2)),which is much better than that of a standard unhardened SRAM with an identical technology node.A 1 KB block has a higher LETth of 25 MeV/(mg/cm^(2))owing to the use of the error detection and correction(EDAC)code.For a Ta ion irradiation test with the highest LET value(83.4 MeV/(mg/cm^(2))),the benefit of the EDAC code is reduced significantly because the multi-bit upset proportion in the SEU is increased remarkably.Compared with normal incident ions,the memory exhibits a higher SEU sensitivity in the tilt angle irradiation test.Moreover,the SEU cross section indicates a significant dependence on the data pattern.When comprehensively considering HSPICE simulation results and the sensitive area distributions of the DICE cell,it is shown that the data pattern dependence is primarily associated with the arrangement of sensitive transistor pairs in the layout.Finally,some suggestions are provided to further improve the radiation resistance of the memory.By implementing a particular design at the layout level,the SEU tolerance of the memory is improved significantly at a low area cost.Therefore,the designed 65 nm SRAM is suitable for electronic systems operating in serious radiation environments.展开更多
This study was to investigate the effect of annexin A5 on testosterone secretion from primary rat Leydig cells and the underlying mechanisms. Isolated rat Leydig ceils were treated with annexin A5. Testosterone produc...This study was to investigate the effect of annexin A5 on testosterone secretion from primary rat Leydig cells and the underlying mechanisms. Isolated rat Leydig ceils were treated with annexin A5. Testosterone production was detected by chemiluminescence assay. The protein and mRNA of Steroidogenic acute regulatory （STAR）, P450scc, 3β-hydroxysteroid dehydrogenase （3β-HSD）, 17β-hydroxysteroid dehydrogenase （17β-HSD）, and 17β-hydroxylase were examined by Western blotting and semi-quantitative RT-PCR, respectively. Annexin A5 significantly stimulated testosterone secretion from rat Leydig cells in dose- and time-dependent manners and increased mRNA and protein expression of STAR, P450scc, 3β-HSD, and 17β-HSD but not 17α-hydroxylase. Annexin A5 knockdown by siRNA significantly decreased the level of testosterone and protein expression of P450scc, 3β-HSD, and 17β-HSD. The significant activation of ERK1/2 signaling was observed at 5, 10, and 30 min after annexin A5 treatment. After the pretreatment of Leydig cells with ERK inhibitor PD98059 （50 μmol l^-1） for 20 min, the effects of annexin A5 on promoting testosterone secretion and increasing the expression of P450scc, 3β-HSD, and 17β-HSD were completely abrogated （P 〈 0.05）. Thus, ERK1/2 signaling is involved in the roles of annexin A5 in mediating testosterone production and the expression of P450scc, 3β-HSD, and 17β-HSD in Leydig cells.展开更多
Tl-based superconducting devices have been drawn much attention for their high transition temperature(T_c), which allow the high temperature superconductors(HTS) devices to operate at temperature near 100 K. The reali...Tl-based superconducting devices have been drawn much attention for their high transition temperature(T_c), which allow the high temperature superconductors(HTS) devices to operate at temperature near 100 K. The realization of Tlbased devices will promote the research and application of HTS devices. In this work, we present transport properties of Tl_(2) Ba_(2) CaCu_(2) O_(8)(Tl-2212) microbridges across a low-angle step on LaAlO_(3)(LAO) substrate. We experimentally demonstrate intrinsic Josephson effects(IJEs) in Tl-2212 films by tailoring the geometry, i.e., reducing the width of the microbridges. In the case of a 1 μm width microbridge, in addition to the observation of voltage branches and remarkable hysteresis on the current–voltage(I–V) characteristics, the temperature dependence of differential resistance shows a finite resistance above 60 K when the bias current is below the critical current. For comparison, the wider microbridges are also investigated, exhibiting a highly critical current but do not showing obvious IJEs.展开更多
Geant4 Monte Carlo simulation results of the single event upset(SEU)induced by protons with energy ranging from 0.3 MeV to 1 GeV are reported.The SEU cross section for planar and three-dimensional(3D)die-stacked SRAM ...Geant4 Monte Carlo simulation results of the single event upset(SEU)induced by protons with energy ranging from 0.3 MeV to 1 GeV are reported.The SEU cross section for planar and three-dimensional(3D)die-stacked SRAM are calculated.The results show that the SEU cross sections of the planar device and the 3D device are different from each other under low energy proton direct ionization mechanism,but almost the same for the high energy proton.Besides,the multi-bit upset(MBU)ratio and pattern are presented and analyzed.The results indicate that the MBU ratio of the 3D die-stacked device is higher than that of the planar device,and the MBU patterns are more complicated.Finally,the on-orbit upset rate for the 3D die-stacked device and the planar device are calculated by SPACE RADIATION software.The calculation results indicate that no matter what the orbital parameters and shielding conditions are,the on-orbit upset rate of planar device is higher than that of 3D die-stacked device.展开更多
Spatial resolution and image-processing methods for full-field X-ray fluorescence(FF-XRF)imaging using X-ray pinhole cameras were studied using Geant4simulations with different geometries and algorithms for image reco...Spatial resolution and image-processing methods for full-field X-ray fluorescence(FF-XRF)imaging using X-ray pinhole cameras were studied using Geant4simulations with different geometries and algorithms for image reconstruction.The main objectives were:(1)calculating the quantum efficiency curves of specific cameras,(2)studying the relationships between the spatial resolution and the pinhole diameter,magnification,and camera binning value,and(3)comparing image-processing methods for pinhole camera systems.Several results were obtained using a point and plane source as the X-ray fluorescence emitter and an array of 100×100 silicon pixel detectors as the X-ray camera.The quantum efficiency of a back-illuminated deep depletion(BI-DD)structure was above 30%for the XRF energies in the 0.8–9 keV range,with the maximum of 93.7%at 4 keV.The best spatial resolution of the pinhole camera was 24.7μm and 31.3 lp/mm when measured using the profile function of the point source,with the diameter of 20μm,magnification of 3.16,and camera bin of 1.A blind deconvolution algorithm with Gaussian filtering performed better than the Wiener filter and Richardson iterative methods on FF-XRF images,with the signal-to-noise ratio of 7.81 dB and improved signalto-noise ratio of 7.24 dB at the diameter of 120μm,magnification of 1.0,and camera bin of 1.展开更多
We report the circuit simulations and experiments of millimeter-wave radiation from a high temperature superconducting(HTS) bicrystal Josephson junction(BJJ) array. To study the effects of junction characteristic para...We report the circuit simulations and experiments of millimeter-wave radiation from a high temperature superconducting(HTS) bicrystal Josephson junction(BJJ) array. To study the effects of junction characteristic parameters on radiation properties, new radiation circuit models are proposed in this paper. The series resistively and capacitively shunted junction(RCSJ) models are packaged into a Josephson junction array(JJA) model in the simulation. The current-voltage characteristics(IVCs) curve and radiation peaks are simulated and analyzed by circuit models, which are also observed from the experiment at liquid nitrogen temperature. The experimental radiation linewidth and power are in good agreement with simulated results. The presented circuit models clearly demonstrate that the inconsistency of the JJA will cause a broad linewidth and a low detected power. The junction radiation properties are also investigated at the optimal situation by circuit simulation. The results further confirm that the consistent JJA characteristic parameters can successfully narrow the radiation linewidth and increase the power of junction radiation.展开更多
Three-dimensional integrated circuits(3D ICs)have entered into the mainstream due to their high performance,high integration,and low power consumption.When used in atmospheric environments,3D ICs are irradiated inevit...Three-dimensional integrated circuits(3D ICs)have entered into the mainstream due to their high performance,high integration,and low power consumption.When used in atmospheric environments,3D ICs are irradiated inevitably by neutrons.In this paper,a 3D die-stacked SRAM device is constructed based on a real planar SRAM device.Then,the single event upsets(SEUs)caused by neutrons with different energies are studied by the Monte Carlo method.The SEU cross-sections for each die and for the whole three-layer die-stacked SRAM device is obtained for neutrons with energy ranging from 1 MeV to 1000 MeV.The results indicate that the variation trend of the SEU cross-section for every single die and for the entire die-stacked device is consistent,but the specific values are different.The SEU cross-section is shown to be dependent on the threshold of linear energy transfer(LETth)and thickness of the sensitive volume(Tsv).The secondary particle distribution and energy deposition are analyzed,and the internal mechanism that is responsible for this difference is illustrated.Besides,the ratio and patterns of multiple bit upset(MBU)caused by neutrons with different energies are also presented.This work is helpful for the aerospace IC designers to understand the SEU mechanism of 3D ICs caused by neutrons irradiation.展开更多
基金financially supported by the National Natural Science Foundation of China under Project No.51874267 and No.12272374the Fundamental Research Funds for the Central Universities under Project Nos.WK2480000008,WK2480000007,and WK2320000049。
文摘A launching system with a filter cartridge structure was proposed to improve the muzzle velocity of the projectile.The combustion chamber of the launching system is divided into two fixed chambers,one is located in the breech chamber,and the other is arranged in the barrel.The breech chamber charge was ignited first,and the charges in the auxiliary chambers were ignited by the high-temperature,highpressure combustible gas trailing the projectile.In this way,the combustible gas in the auxiliary chambers could compensate for the pressure drop caused by the movement of the projectile.The proposed device features the advantage of launching a projectile with high muzzle velocity without exceeding the maximum pressure in the chamber.In order to obtain some internal ballistic characteristics of the launch system,some critical structure,such as the length of the filter cartridge auxiliary charge,the combustion degree of the propellant in the chamber,and the length of the barrel,are discussed.The experimental results show that with the increased auxiliary charge length,a pressure plateau or even a secondary peak pressure can be formed,which is less than the peak pressure.The projectile velocity increased by 23.57%,14.64%,and 7.65%when the diaphragm thickness was 0 mm,1 mm,and2 mm,respectively.The muzzle velocity of the projectile can be increased by 13.42%by increasing the length of the barrel.Under the same charge condition,with the increase of barrel length,the energy utilization rate of propellant increases by 28.64%.
基金supported by the National Natural Science Foundation of China(Nos.12035019 and 11690041).
文摘For modern scaling devices,multiple cell upsets(MCUs)have become a major threat to high-reliability field-programmable gate array(FPGA)-based systems.Thus,both performing the worst-case irradiation tests to provide the actual MCU response of devices and proposing an effective MCU distinction method are urgently needed.In this study,high-and medium-energy heavy-ion irradiations for the configuration random-access memory of 28 nm FPGAs are performed.An MCU extraction method supported by theoretical predictions is proposed to study the MCU sizes,shapes,and frequencies in detail.Based on the extraction method,the different percentages,and orientations of the large MCUs in both the azimuth and zenith directions determine the worse irradiation response of the FPGAs.The extracted largest 9-bit MCUs indicate that high-energy heavy ions can induce more severe failures than medium-energy ones.The results show that both the use of high-energy heavy ions during MCU evaluations and effective protection for the application of high-density 28 nm FPGAs in space are extremely necessary.
基金the National Natural Science Foundation of China(Nos.12035019 and 12105339).
文摘Multiple-bit upsets(MBUs)have become a threat to modern advanced field-programmable gate arrays(FPGAs)applications in radiation environments.Hence,many investigations have been conducted using mediumenergy heavy ions to study the effects of MBU radiation.However,high-energy heavy ions(HEHIs)greatly affect the size and percentage of MBUs because their ionizationtrack structures differ from those of medium-energy heavy ions.In this study,the different impacts of high-energy and medium-energy heavy ions on MBUs in 28 nm FPGAs as well as their mechanisms are thoroughly investigated.With the Geant4 calculation,more serious energy effects of HEHIs on MBU scales were successfully demonstrated.In addition,we identified worse MBU responses resulting from lowered voltages.The MBU orientation effect was observed in the radiation of different dimensions.The broadened ionization tracks for tilted tests in different dimensions could result in different MBU sizes.The results also revealed that the ionization tracks of tilted HEHIs have more severe impacts on the MBU scales than mediumenergy heavy ions with much higher linear energy transfer.Therefore,comprehensive radiation with HEHIs is indispensable for effective hardened designs to apply highdensity 28 nm FPGAs in deep space exploration.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.12035019,12105339,and62174180)the Opening Special Foundation of State Key Laboratory of Intense Pulsed Radiation Simulation and Effect,China(Grant No.SKLIPR2113)。
文摘The variations of single event transient(SET)pulse width of high-LET heavy ion irradiation in 16-nm-thick bulk silicon fin field-effect transistor(Fin FET)inverter chains with different driven strengths are measured at different temperatures.Three-dimensional(3D)technology computer-aided design simulations are carried out to study the SET pulse width and saturation current varying with temperature.Experimental and simulation results indicate that the increase in temperature will enhance the parasitic bipolar effect of bulk Fin FET technology,resulting in the increase of SET pulse width.On the other hand,the increase of inverter driven strength will change the layout topology,which has a complex influence on the SET temperature effects of Fin FET inverter chains.The experimental and simulation results show that the device with the strongest driven strength has the least dependence on temperature.
基金the National Natural Science Foundation of China(Nos.12035019,11690041,and 11805244).
文摘A dual double interlocked storage cell(DICE)interleaving layout static random-access memory(SRAM)is designed and manufactured based on 65 nm bulk complementary metal oxide semiconductor technology.The single event upset(SEU)cross sections of this memory are obtained via heavy ion irradiation with a linear energy transfer(LET)value ranging from 1.7 to 83.4 MeV/(mg/cm^(2)).Experimental results show that the upset threshold(LETth)of a 4 KB block is approximately 6 MeV/(mg/cm^(2)),which is much better than that of a standard unhardened SRAM with an identical technology node.A 1 KB block has a higher LETth of 25 MeV/(mg/cm^(2))owing to the use of the error detection and correction(EDAC)code.For a Ta ion irradiation test with the highest LET value(83.4 MeV/(mg/cm^(2))),the benefit of the EDAC code is reduced significantly because the multi-bit upset proportion in the SEU is increased remarkably.Compared with normal incident ions,the memory exhibits a higher SEU sensitivity in the tilt angle irradiation test.Moreover,the SEU cross section indicates a significant dependence on the data pattern.When comprehensively considering HSPICE simulation results and the sensitive area distributions of the DICE cell,it is shown that the data pattern dependence is primarily associated with the arrangement of sensitive transistor pairs in the layout.Finally,some suggestions are provided to further improve the radiation resistance of the memory.By implementing a particular design at the layout level,the SEU tolerance of the memory is improved significantly at a low area cost.Therefore,the designed 65 nm SRAM is suitable for electronic systems operating in serious radiation environments.
文摘This study was to investigate the effect of annexin A5 on testosterone secretion from primary rat Leydig cells and the underlying mechanisms. Isolated rat Leydig ceils were treated with annexin A5. Testosterone production was detected by chemiluminescence assay. The protein and mRNA of Steroidogenic acute regulatory （STAR）, P450scc, 3β-hydroxysteroid dehydrogenase （3β-HSD）, 17β-hydroxysteroid dehydrogenase （17β-HSD）, and 17β-hydroxylase were examined by Western blotting and semi-quantitative RT-PCR, respectively. Annexin A5 significantly stimulated testosterone secretion from rat Leydig cells in dose- and time-dependent manners and increased mRNA and protein expression of STAR, P450scc, 3β-HSD, and 17β-HSD but not 17α-hydroxylase. Annexin A5 knockdown by siRNA significantly decreased the level of testosterone and protein expression of P450scc, 3β-HSD, and 17β-HSD. The significant activation of ERK1/2 signaling was observed at 5, 10, and 30 min after annexin A5 treatment. After the pretreatment of Leydig cells with ERK inhibitor PD98059 （50 μmol l^-1） for 20 min, the effects of annexin A5 on promoting testosterone secretion and increasing the expression of P450scc, 3β-HSD, and 17β-HSD were completely abrogated （P 〈 0.05）. Thus, ERK1/2 signaling is involved in the roles of annexin A5 in mediating testosterone production and the expression of P450scc, 3β-HSD, and 17β-HSD in Leydig cells.
文摘Tl-based superconducting devices have been drawn much attention for their high transition temperature(T_c), which allow the high temperature superconductors(HTS) devices to operate at temperature near 100 K. The realization of Tlbased devices will promote the research and application of HTS devices. In this work, we present transport properties of Tl_(2) Ba_(2) CaCu_(2) O_(8)(Tl-2212) microbridges across a low-angle step on LaAlO_(3)(LAO) substrate. We experimentally demonstrate intrinsic Josephson effects(IJEs) in Tl-2212 films by tailoring the geometry, i.e., reducing the width of the microbridges. In the case of a 1 μm width microbridge, in addition to the observation of voltage branches and remarkable hysteresis on the current–voltage(I–V) characteristics, the temperature dependence of differential resistance shows a finite resistance above 60 K when the bias current is below the critical current. For comparison, the wider microbridges are also investigated, exhibiting a highly critical current but do not showing obvious IJEs.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11690041 and 11675233)the Fund from the Science and Technology on Analog Integrated Circuit Laboratory,China(Grant No.JCKY2019210C054).
文摘Geant4 Monte Carlo simulation results of the single event upset(SEU)induced by protons with energy ranging from 0.3 MeV to 1 GeV are reported.The SEU cross section for planar and three-dimensional(3D)die-stacked SRAM are calculated.The results show that the SEU cross sections of the planar device and the 3D device are different from each other under low energy proton direct ionization mechanism,but almost the same for the high energy proton.Besides,the multi-bit upset(MBU)ratio and pattern are presented and analyzed.The results indicate that the MBU ratio of the 3D die-stacked device is higher than that of the planar device,and the MBU patterns are more complicated.Finally,the on-orbit upset rate for the 3D die-stacked device and the planar device are calculated by SPACE RADIATION software.The calculation results indicate that no matter what the orbital parameters and shielding conditions are,the on-orbit upset rate of planar device is higher than that of 3D die-stacked device.
基金supported by the Sichuan Science and Technology Program,China(No.2020ZDZX0004)。
文摘Spatial resolution and image-processing methods for full-field X-ray fluorescence(FF-XRF)imaging using X-ray pinhole cameras were studied using Geant4simulations with different geometries and algorithms for image reconstruction.The main objectives were:(1)calculating the quantum efficiency curves of specific cameras,(2)studying the relationships between the spatial resolution and the pinhole diameter,magnification,and camera binning value,and(3)comparing image-processing methods for pinhole camera systems.Several results were obtained using a point and plane source as the X-ray fluorescence emitter and an array of 100×100 silicon pixel detectors as the X-ray camera.The quantum efficiency of a back-illuminated deep depletion(BI-DD)structure was above 30%for the XRF energies in the 0.8–9 keV range,with the maximum of 93.7%at 4 keV.The best spatial resolution of the pinhole camera was 24.7μm and 31.3 lp/mm when measured using the profile function of the point source,with the diameter of 20μm,magnification of 3.16,and camera bin of 1.A blind deconvolution algorithm with Gaussian filtering performed better than the Wiener filter and Richardson iterative methods on FF-XRF images,with the signal-to-noise ratio of 7.81 dB and improved signalto-noise ratio of 7.24 dB at the diameter of 120μm,magnification of 1.0,and camera bin of 1.
基金Project supported by the National Natural Science Foundation of China(Grant No.51002081)the Fundamental Research Funds for the Central Universities,China+1 种基金the China Manned Space Advance Research Program,China(Grant No.030201)the Research Program of Application Foundation and Advanced Technology of Tianjin,China(Grant No.15JCQNJC01300)
文摘We report the circuit simulations and experiments of millimeter-wave radiation from a high temperature superconducting(HTS) bicrystal Josephson junction(BJJ) array. To study the effects of junction characteristic parameters on radiation properties, new radiation circuit models are proposed in this paper. The series resistively and capacitively shunted junction(RCSJ) models are packaged into a Josephson junction array(JJA) model in the simulation. The current-voltage characteristics(IVCs) curve and radiation peaks are simulated and analyzed by circuit models, which are also observed from the experiment at liquid nitrogen temperature. The experimental radiation linewidth and power are in good agreement with simulated results. The presented circuit models clearly demonstrate that the inconsistency of the JJA will cause a broad linewidth and a low detected power. The junction radiation properties are also investigated at the optimal situation by circuit simulation. The results further confirm that the consistent JJA characteristic parameters can successfully narrow the radiation linewidth and increase the power of junction radiation.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.12035019,111690041,and 11675233)the Project of Science and Technology on Analog Integrated Circuit Laboratory,China(Grant No.6142802WD201801).
文摘Three-dimensional integrated circuits(3D ICs)have entered into the mainstream due to their high performance,high integration,and low power consumption.When used in atmospheric environments,3D ICs are irradiated inevitably by neutrons.In this paper,a 3D die-stacked SRAM device is constructed based on a real planar SRAM device.Then,the single event upsets(SEUs)caused by neutrons with different energies are studied by the Monte Carlo method.The SEU cross-sections for each die and for the whole three-layer die-stacked SRAM device is obtained for neutrons with energy ranging from 1 MeV to 1000 MeV.The results indicate that the variation trend of the SEU cross-section for every single die and for the entire die-stacked device is consistent,but the specific values are different.The SEU cross-section is shown to be dependent on the threshold of linear energy transfer(LETth)and thickness of the sensitive volume(Tsv).The secondary particle distribution and energy deposition are analyzed,and the internal mechanism that is responsible for this difference is illustrated.Besides,the ratio and patterns of multiple bit upset(MBU)caused by neutrons with different energies are also presented.This work is helpful for the aerospace IC designers to understand the SEU mechanism of 3D ICs caused by neutrons irradiation.
