Minimizing the footprint and energy consumption of integrated Ⅲ–Ⅴ lasers necessitates tight optical confinement in all three dimensions. Limited by the small index contrast of conventional vertical epitaxy, light c...Minimizing the footprint and energy consumption of integrated Ⅲ–Ⅴ lasers necessitates tight optical confinement in all three dimensions. Limited by the small index contrast of conventional vertical epitaxy, light confinement in the vertical direction is often achieved via undercutting sacrificial layers or transferring onto foreign low-index substrates. In contrast, selective lateral heteroepitaxy enables the architecture of Ⅲ–Ⅴ-on-insulator and supports strong vertical mode confinement.展开更多
基金National Natural Science Foundation of China(62475289,RLZY20231001-02,62135012)。
文摘Minimizing the footprint and energy consumption of integrated Ⅲ–Ⅴ lasers necessitates tight optical confinement in all three dimensions. Limited by the small index contrast of conventional vertical epitaxy, light confinement in the vertical direction is often achieved via undercutting sacrificial layers or transferring onto foreign low-index substrates. In contrast, selective lateral heteroepitaxy enables the architecture of Ⅲ–Ⅴ-on-insulator and supports strong vertical mode confinement.
