The(001)oriented BiFeO_(3)thin film was deposited on the Nb:SrTiO_(3)substrate by radio frequency magnetron sputtering technology,and the bipolar resistive switching effect was observed in the BiFeO_(3)/Nb:SrTiO_(3)he...The(001)oriented BiFeO_(3)thin film was deposited on the Nb:SrTiO_(3)substrate by radio frequency magnetron sputtering technology,and the bipolar resistive switching effect was observed in the BiFeO_(3)/Nb:SrTiO_(3)heterostructure.The results showed that the ratio between the high resistance and low resistance was more than two orders at a reading pulse of-0.5 V and it exhibited excellent retention over 3600 s.The current density-voltage characteristic was dominated by the space-charge-limited conduction.The resistive switching effect of the structure was attributed to the trapping/detrapping of the charge carriers.展开更多
基金Funded by the National Natural Science Foundation of China(Nos.61201046 and 61306057)the Beijing Natural Science Foundation of China(Nos.4162013,2132023 and 4164082)+2 种基金the Beijing Postdoctoral Research Foundation(No.2015ZZ-33)the Scientific Research Project of Beijing Educational Committee(No.KM201610005005)the Scientific Research Foundation for Returned Overseas Chinese Scholars,State Education Ministry
文摘The(001)oriented BiFeO_(3)thin film was deposited on the Nb:SrTiO_(3)substrate by radio frequency magnetron sputtering technology,and the bipolar resistive switching effect was observed in the BiFeO_(3)/Nb:SrTiO_(3)heterostructure.The results showed that the ratio between the high resistance and low resistance was more than two orders at a reading pulse of-0.5 V and it exhibited excellent retention over 3600 s.The current density-voltage characteristic was dominated by the space-charge-limited conduction.The resistive switching effect of the structure was attributed to the trapping/detrapping of the charge carriers.
