In this paper, the effects of different Cd Cl2 annealing methods, including vapor annealing and dip-coating annealing, on the performance of Cd S/Cd Te polycrystalline thin-film solar cells are studied. After annealin...In this paper, the effects of different Cd Cl2 annealing methods, including vapor annealing and dip-coating annealing, on the performance of Cd S/Cd Te polycrystalline thin-film solar cells are studied. After annealing, the samples are lightly etched with 1% bromine in methanol to remove surface oxides. Both annealing methods give Cd Te polycrystalline thin films with good crystallinity and complete structure. For solar cells containing the annealed Cd Te films, cell efficiency first increases and then decreases as the concentration of Cd Cl2 solution used for dip-coating annealing increases, and the optimized Cd Cl2 concentration is 12%. The uniformity of the performance of all cells is analyzed by calculating the relative standard deviation for each parameter. The uniformity of cell performance can be improved dramatically by dip-coating annealing instead of vapor annealing. Most notably, an appropriate concentration of Cd Cl2(12%) acts as a protective layer that is conducive to realizing uniform high-performance Cd S/Cd Te solar cells. According to the location of depletion regions, the Cd Te films treated by dip-coating annealing show a relatively low doping concentration, except for the sample treated with a Cd Cl2 concentration of 6%, which is consistent with the changes of short-circuit current density of the cells. It is believed that these results can be applied to the large-scale production of Cd Te polycrystalline thin-film solar cells.展开更多
基金supported by the National Hi-Tech Research and Development Program of China("863"Project)(Grant No.2011AA050515)Sichuan Province Science and Technology Support Program(Grant No.2013GZX0145)very grateful for funding from China Scholarship Council(CSC)
文摘In this paper, the effects of different Cd Cl2 annealing methods, including vapor annealing and dip-coating annealing, on the performance of Cd S/Cd Te polycrystalline thin-film solar cells are studied. After annealing, the samples are lightly etched with 1% bromine in methanol to remove surface oxides. Both annealing methods give Cd Te polycrystalline thin films with good crystallinity and complete structure. For solar cells containing the annealed Cd Te films, cell efficiency first increases and then decreases as the concentration of Cd Cl2 solution used for dip-coating annealing increases, and the optimized Cd Cl2 concentration is 12%. The uniformity of the performance of all cells is analyzed by calculating the relative standard deviation for each parameter. The uniformity of cell performance can be improved dramatically by dip-coating annealing instead of vapor annealing. Most notably, an appropriate concentration of Cd Cl2(12%) acts as a protective layer that is conducive to realizing uniform high-performance Cd S/Cd Te solar cells. According to the location of depletion regions, the Cd Te films treated by dip-coating annealing show a relatively low doping concentration, except for the sample treated with a Cd Cl2 concentration of 6%, which is consistent with the changes of short-circuit current density of the cells. It is believed that these results can be applied to the large-scale production of Cd Te polycrystalline thin-film solar cells.
