The dissolution of alumina-based refractory ceramics in CaO-Al2O3-SiO_(2)slag melts was performed based on the in-situ observation system of an ultra-high-temperature laser confocal microscope,and the effect of the Ca...The dissolution of alumina-based refractory ceramics in CaO-Al2O3-SiO_(2)slag melts was performed based on the in-situ observation system of an ultra-high-temperature laser confocal microscope,and the effect of the CaO/SiO_(2)slag mass ratio(C/S ratio)on the dissolution rate of alumina-based refractory ceramics was investigated.The results indicate that the dissolution rate increases with an increase of the C/S ratio and is mainly controlled by diffusion.During the early stage of dissolution,for all C/S ratios,the dissolution process conforms to the classical invariant interface approximation model.During the later stage of dissolution,when the C/S ratio is≥6,the dissolution process is significantly different from the model above because of the formation of a thick interfacial layer,which can be explained by dissolution kinetics.展开更多
基金supported by the National Natural Science Foundation of China(52272022)the Special Project of Central Government for Local Science and Technology Development of Hubei Province(2019ZYYD076)the Innovation and Entrepreneurship Fund of Wuhan University of Science and Technology(D202202171045002669).
文摘The dissolution of alumina-based refractory ceramics in CaO-Al2O3-SiO_(2)slag melts was performed based on the in-situ observation system of an ultra-high-temperature laser confocal microscope,and the effect of the CaO/SiO_(2)slag mass ratio(C/S ratio)on the dissolution rate of alumina-based refractory ceramics was investigated.The results indicate that the dissolution rate increases with an increase of the C/S ratio and is mainly controlled by diffusion.During the early stage of dissolution,for all C/S ratios,the dissolution process conforms to the classical invariant interface approximation model.During the later stage of dissolution,when the C/S ratio is≥6,the dissolution process is significantly different from the model above because of the formation of a thick interfacial layer,which can be explained by dissolution kinetics.
