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OBSERVATION ON DEFECTS IN POLYCRYSTALLINE SILICON THIN FILMS
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作者 Y.F.Hu H.Shen +3 位作者 L.Wang z.c.liang Z.Y.Liu L.S.Wen 《Acta Metallurgica Sinica(English Letters)》 SCIE EI CAS CSCD 2005年第3期295-299,共5页
Polycrystalline silicon thin films were prepared by RTCVD (rapid thermal chemica l vapor deposition) method on several substrates such as SSP (silicon sheet from powder) ribbon, poly-Si wafer and mono-Si wafer. Intra-... Polycrystalline silicon thin films were prepared by RTCVD (rapid thermal chemica l vapor deposition) method on several substrates such as SSP (silicon sheet from powder) ribbon, poly-Si wafer and mono-Si wafer. Intra-granular defects such as stacking faults, twins and microstructure defects were investigated on thin fil ms by scan electron microscopy (SEM) technique. 展开更多
关键词 poly-Si thin film intra-granular defects surface CROSS-SECTION
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SUBSTRATE MATERIALS FOR POLY-CSiTF SOLAR CELLS: OPTIMIZATION OF SILICON SHEET FROM POWDER
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作者 Q.Ban H.Shen +2 位作者 X.J.Wang X.W.Zou z.c.liang 《Acta Metallurgica Sinica(English Letters)》 SCIE EI CAS CSCD 2005年第3期184-188,共5页
The optimization of silicon sheet from powder (SSP) technology as polycrystalli ne silicon thin film (poly-CSiTF) solar cells' substrate materials is studied by orthogonal design experimental method. Based on tech... The optimization of silicon sheet from powder (SSP) technology as polycrystalli ne silicon thin film (poly-CSiTF) solar cells' substrate materials is studied by orthogonal design experimental method. Based on technological optimization of S SP prepared from electronic grade silicon powder, SSP solar cell devices with si mple structure are prepared and the effect of SSP substrate is discussed. Up to now, the conversion efficiency of the prepared solar cells on low purity SSP sub strate with fundamental structure has reached 8.25% (with area of 1cm×1cm). 展开更多
关键词 poly-CSiTF SSP substrate material
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