Diamond is an ultimate semiconductor with exceptional physical and chemical properties,such as an ultra‐wide bandgap,excellent carrier mobility,extreme thermal conductivity,and stability,making it highly desirable fo...Diamond is an ultimate semiconductor with exceptional physical and chemical properties,such as an ultra‐wide bandgap,excellent carrier mobility,extreme thermal conductivity,and stability,making it highly desirable for various applications including power electronics,sensors,and optoelectronic devices.However,the challenge lies in growing the large‐size and high‐quality single‐crystal diamond films,which are crucial for realizing the full potential of this wonder material.Hetero-epitaxial growth has emerged as a promising approach to achieve single‐crystal diamond wafers with large sizes of up to 3 inches and controlled electrical properties.This review provides an overview of the advance-ments in diamond heteroepitaxy using microwave plasma‐assisted chemical vapor deposition,including the mechanism of heteroepitaxial growth,selection of substrates,film optimization,chemistry of defects,and doping.Moreover,recent progress on the device applications and perspectives is also discussed.展开更多
基金Research and Development of Single Crystal Diamond Semiconductors and Device Technologies,Grant/Award Number:20233160A0738National Natural Science Foundation of China,Grant/Award Number:22275154。
文摘Diamond is an ultimate semiconductor with exceptional physical and chemical properties,such as an ultra‐wide bandgap,excellent carrier mobility,extreme thermal conductivity,and stability,making it highly desirable for various applications including power electronics,sensors,and optoelectronic devices.However,the challenge lies in growing the large‐size and high‐quality single‐crystal diamond films,which are crucial for realizing the full potential of this wonder material.Hetero-epitaxial growth has emerged as a promising approach to achieve single‐crystal diamond wafers with large sizes of up to 3 inches and controlled electrical properties.This review provides an overview of the advance-ments in diamond heteroepitaxy using microwave plasma‐assisted chemical vapor deposition,including the mechanism of heteroepitaxial growth,selection of substrates,film optimization,chemistry of defects,and doping.Moreover,recent progress on the device applications and perspectives is also discussed.
