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Optimal Control of Oxygen Concentration in a Magnetic Czochralski Crystal Growth by Response Surface Methodology 被引量:1
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作者 Huiping YU yunkan sui +2 位作者 Jing WANG Fengyi ZHANG Xiaolin DAI 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2006年第2期173-178,共6页
Concepts and techniques of response surface methodology have been widely applied in many branches of engineering, especially in the chemical and manufacturing areas. This paper presents an application of the methodolo... Concepts and techniques of response surface methodology have been widely applied in many branches of engineering, especially in the chemical and manufacturing areas. This paper presents an application of the methodology in a magnetic crystal Czochralski growth system for single crystal silicon to optimize the oxygen concentration at the crystal growth interface in a cusp magnetic field. The simulation demonstrates that the response surface methodology is a feasible algorithm for the optimization of the Czochralski crystal growth process. 展开更多
关键词 CZOCHRALSKI Magnetic field OPTIMIZATION Response surface methodology
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