运用文献计量学方法,基于近10年来Web of Science(WoS)数据库中的人工智能医学教育应用研究相关文献,开展关联、聚类、突变等可视化分析,探究国际人工智能医学教育应用研究现状、研究热点和发展趋势,发现机器人辅助手术培训、智能评价...运用文献计量学方法,基于近10年来Web of Science(WoS)数据库中的人工智能医学教育应用研究相关文献,开展关联、聚类、突变等可视化分析,探究国际人工智能医学教育应用研究现状、研究热点和发展趋势,发现机器人辅助手术培训、智能评价反馈系统和智能虚拟仿真系统是国际人工智能医学教育的研究热点,其研究演进遵循从标准化到个性化、从实体空间到虚实融合、从关注独立思考到人机协同决策这一脉络,以期为我国人工智能医学教育研究工作者提供参考和情报支持。展开更多
We report the room temperature resonant tunneling and negative differential resistance(NDR)effects in a self-assembled Si quantum dot(Si-QDs)array.The double-layer structure of Al/SiO_(2)/Si-QDs/SiO_(2)/p-Si substrate...We report the room temperature resonant tunneling and negative differential resistance(NDR)effects in a self-assembled Si quantum dot(Si-QDs)array.The double-layer structure of Al/SiO_(2)/Si-QDs/SiO_(2)/p-Si substrate is fabricated by layer-by-layer deposition and in situ plasma oxidation in a plasma-enhanced chemical vapor deposition(PECVD)system.Obvious NDR effects are directly observed in the current-voltage characteristics,and similar peak structures at the same voltage are also identified in the capacitance-voltage characteristics.Both of them are attributed to the resonant tunneling and charging dynamics in the Si-QD array.Moreover,the major features,such as the scan-rate and scan-direction dependences of the peak structure,are investigated,and the underlying mechanism is found to be quite different from that of a quantum well structure.Based on a master-equation numerical model,the resonant tunneling and charging dynamics together with the unique features can be satisfactorily explained and reproduced.展开更多
文摘运用文献计量学方法,基于近10年来Web of Science(WoS)数据库中的人工智能医学教育应用研究相关文献,开展关联、聚类、突变等可视化分析,探究国际人工智能医学教育应用研究现状、研究热点和发展趋势,发现机器人辅助手术培训、智能评价反馈系统和智能虚拟仿真系统是国际人工智能医学教育的研究热点,其研究演进遵循从标准化到个性化、从实体空间到虚实融合、从关注独立思考到人机协同决策这一脉络,以期为我国人工智能医学教育研究工作者提供参考和情报支持。
文摘We report the room temperature resonant tunneling and negative differential resistance(NDR)effects in a self-assembled Si quantum dot(Si-QDs)array.The double-layer structure of Al/SiO_(2)/Si-QDs/SiO_(2)/p-Si substrate is fabricated by layer-by-layer deposition and in situ plasma oxidation in a plasma-enhanced chemical vapor deposition(PECVD)system.Obvious NDR effects are directly observed in the current-voltage characteristics,and similar peak structures at the same voltage are also identified in the capacitance-voltage characteristics.Both of them are attributed to the resonant tunneling and charging dynamics in the Si-QD array.Moreover,the major features,such as the scan-rate and scan-direction dependences of the peak structure,are investigated,and the underlying mechanism is found to be quite different from that of a quantum well structure.Based on a master-equation numerical model,the resonant tunneling and charging dynamics together with the unique features can be satisfactorily explained and reproduced.
