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Effect of transient space-charge perturbation on carrier transport in high-resistance CdZnTe semiconductor
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作者 Yu Guo Gang-Qiang Zha +3 位作者 ying-rui li Ting-Ting Tan Hao Zhu Sen Wu 《Chinese Physics B》 SCIE EI CAS CSCD 2019年第11期304-307,共4页
The polarization effect introduced by electric field deformation is the most important bottleneck of CdZnTe detector in x-ray imaging. Currently, most of studies focus on electric field deformation caused by trapped c... The polarization effect introduced by electric field deformation is the most important bottleneck of CdZnTe detector in x-ray imaging. Currently, most of studies focus on electric field deformation caused by trapped carriers;the perturbation of electric field due to drifting carriers has been rarely reported. In this study, the effect of transient space-charge perturbation on carrier transport in a CdZnTe semiconductor is evaluated by using the laser-beam-induced current(LBIC) technique.Cusps appear in the current curves of CdZnTe detectors with different carrier transport performances under intense excitation, indicating the deformation of electric field. The current signals under different excitations are compared. The results suggest that with the increase of excitation, the amplitude of cusp increases and the electron transient time gradually decreases. The distortion in electric field is independent of carrier transport performance of detector. Transient space-charge perturbation is responsible for the pulse shape and affects the carrier transport process. 展开更多
关键词 CDZNTE TRANSIENT SPACE-CHARGE PERTURBATION laser-beam-induced current(LBIC) technique carrier transport
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