期刊文献+
共找到4篇文章
< 1 >
每页显示 20 50 100
Degradation of thiamphenicol by La-Fe_(2)O_(3)/DBD/HCP synergistic catalytic system
1
作者 yimo zhao Lijiao Zheng +3 位作者 Yongyang Chen Yuan Liu Shimeng Huang Shanping Li 《Journal of Environmental Sciences》 2025年第8期805-819,共15页
In this study,a highly efficient La-Fe_(2)O_(3)/dielectric barrier discharge(DBD)/honeycomb ce-ramic plate synergistic catalytic systemwas successfully constructed by using modified iron oxide(Fe_(2)O_(3))catalyst coa... In this study,a highly efficient La-Fe_(2)O_(3)/dielectric barrier discharge(DBD)/honeycomb ce-ramic plate synergistic catalytic systemwas successfully constructed by using modified iron oxide(Fe_(2)O_(3))catalyst coating assisted DBD plasma,and the prepared catalytic coating was fully characterized by various techniques.The results indicate that the lanthanum(La)is efficiently and uniformly doped in Fe_(2)O_(3),and the modified La-Fe_(2)O_(3)catalyst exhibited a better photocatalytic performance.The overuse of Thiamphenicol(TAP),as a typical chlo-ramphenicol antibiotic,has led to its accumulation in the aquatic environment.Accordingly,TAPwas selected as the target contaminant to evaluate the catalytic activity of the synergis-tic system.The results confirmed that the catalytic ability of the synergistic catalytic system was significantly improved,and the data showed that the degradation rate of the synergis-tic system reached 99.1%under the same conditions compared with 68.2%for the single DBD plasma,which effectively improved low energy efficiency limitations of the single DBD technology.Through quantitative measurements of the concentrations of dissolved ozone(O3)and hydrogen peroxide(H_(2)O_(2))in the system and radical trapping experiments,com-bined with emission spectroscopy,the mechanism of synergistic system degradation of TAP was analyzed.The intermediates in the degradation process were characterized by high-resolution mass spectrometry,and the degradation pathway of TAP was proposed based on the analysis of the intermediates and their combination with theoretical calculations.This study presents a theoretical basis for the improvement of DBD technology and a technical guide for the removal process of antibiotics from industrial wastewater. 展开更多
关键词 Low-temperature plasma Modified iron oxide catalyst Synergistic effect THIAMPHENICOL
原文传递
天然生物质材料的制备、性质与应用(Ⅺ)——高支化的高浓低黏植物多糖:阿拉伯胶
2
作者 赵以墨 王嘉麟 +3 位作者 吴放 熊海平 薛鹏程 范金石 《日用化学工业(中英文)》 CAS 北大核心 2024年第11期1298-1306,共9页
阿拉伯胶是一种来源于合金欢树(Acacia sengal (L.) Willdenow)及其它亲近树种的具有高度支化结构和复杂组成的天然植物胶。因阿拉伯胶具有良好的水溶性、增稠性、乳化性、稳定性等性质以及安全无毒、生物相容性良好、可生物降解的天然... 阿拉伯胶是一种来源于合金欢树(Acacia sengal (L.) Willdenow)及其它亲近树种的具有高度支化结构和复杂组成的天然植物胶。因阿拉伯胶具有良好的水溶性、增稠性、乳化性、稳定性等性质以及安全无毒、生物相容性良好、可生物降解的天然属性,且利用其分子结构中的羟基、糖苷键等活性官能团进行物理、化学、酶处理及共混/复合后能显著改善其理化性质、增强其功效性能,使得阿拉伯胶及其改性产物和复合物在日用化工、食品、医药、纺织印染、油墨、功能材料等多个行业领域得到广泛应用。本文浅述了阿拉伯胶的名称、来源、结构和典型理化性质与功能特性,并较为系统地介绍了阿拉伯胶的提取方法和再加工工艺,同时介绍了阿拉伯胶及其改性产物和复合物的应用情况,并提及了阿拉伯胶及其改性产物和复合物当前所面临的主要问题及今后的研发方向与发展前景。 展开更多
关键词 阿拉伯胶 结构 性质 提取 改性 复合物 应用
在线阅读 下载PDF
天然生物质材料的制备、性质与应用(Ⅶ)——支链异构阴离子多糖胶:黄芪胶
3
作者 周业杰 刘雅迪 +3 位作者 赵以墨 孙晓彤 高宇 范金石 《日用化学工业(中英文)》 CAS 北大核心 2024年第7期767-776,共10页
黄芪胶是从天然草本植物黄芪中提取的一种多糖类物质,因具有化学稳定性、非致畸性、非免疫原性、生物可降解性、生物相容性和天然无毒等特性,且利用其分子结构中的羟基、羧基、糖苷键等活性官能基团进行分子修饰、化学交联、接枝共聚等... 黄芪胶是从天然草本植物黄芪中提取的一种多糖类物质,因具有化学稳定性、非致畸性、非免疫原性、生物可降解性、生物相容性和天然无毒等特性,且利用其分子结构中的羟基、羧基、糖苷键等活性官能基团进行分子修饰、化学交联、接枝共聚等改性处理能明显改善其理化性质、增强其功能效用,使得黄芪胶及其改性产物在医药领域、食品加工、水处理、医用材料、日用化学品领域得到广泛应用。本文浅述了黄芪胶的来源、组成和结构,主要理化性质和功能作用,以及提取纯化技术和应用进展情况,并提及了黄芪胶及其改产物当前研究开发所面临的问题和发展趋势。 展开更多
关键词 黄芪胶 结构 性质 提取 纯化 改性 应用
在线阅读 下载PDF
High-performing silicon-based germanium Schottky photodetector with ITO transparent electrode
4
作者 Zhiwei Huang Shaoying Ke +4 位作者 Jinrong Zhou yimo zhao Wei Huang Songyan Chen Cheng Li 《Chinese Physics B》 SCIE EI CAS CSCD 2021年第3期447-453,共7页
A near-infrared germanium(Ge)Schottky photodetector(PD)with an ultrathin silicon(Si)barrier enhancement layer between the indium-doped tin oxide(ITO)electrode and Ge epilayer on Si or silicon-on-insulator(SOI)is propo... A near-infrared germanium(Ge)Schottky photodetector(PD)with an ultrathin silicon(Si)barrier enhancement layer between the indium-doped tin oxide(ITO)electrode and Ge epilayer on Si or silicon-on-insulator(SOI)is proposed and fabricated.The well-behaved ITO/Si cap/Ge Schottky junctions without intentional doping process for the Ge epilayer are formed on the Si and SOI substrates.The Si-and SOI-based ITO/Si cap/Ge Schottky PDs exhibit low dark current densities of 33 mA/cm2 and 44 mA/cm2,respectively.Benefited from the high transmissivity of ITO electrode and the reflectivity of SOI substrate,an optical responsivity of 0.19 A/W at 1550 nm wavelength is obtained for the SOI-based ITO/Si cap/Ge Schottky PD.These complementary metal–oxide–semiconductor(CMOS)compatible Si(or SOI)-based ITO/Si cap/Ge Schottky PDs are quite useful for detecting near-infrared wavelengths with high efficiency. 展开更多
关键词 silicon-based Schottky photodetector germanium epilayer indium-doped tin oxide
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部