The growing interest in the use of Gallium Arsenids semiconductor materials has presented many opportunities for device operational speed improvements but has also presented many problems for the device maker,A novel ...The growing interest in the use of Gallium Arsenids semiconductor materials has presented many opportunities for device operational speed improvements but has also presented many problems for the device maker,A novel deep-submicron x-ray lithography process for T-shaped gate patterns useful for high-electron-mobility transistors(HEMT) is introduced in this work.In the fabrication of T-shaped gate a therr layer resists method is used.The x-ray exposure experiments were finished by Beijing Synchrotron Radiation Facility(BSRF) 3B1A beamline,and good result has been obtained.展开更多
文摘The growing interest in the use of Gallium Arsenids semiconductor materials has presented many opportunities for device operational speed improvements but has also presented many problems for the device maker,A novel deep-submicron x-ray lithography process for T-shaped gate patterns useful for high-electron-mobility transistors(HEMT) is introduced in this work.In the fabrication of T-shaped gate a therr layer resists method is used.The x-ray exposure experiments were finished by Beijing Synchrotron Radiation Facility(BSRF) 3B1A beamline,and good result has been obtained.
